High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD (English)
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In:
Semiconductor Science and Technology
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26
, 5
;
055013
;
2011
- Article (Journal) / Electronic Resource
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Title:High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
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Contributors:Wu, C M ( author ) / Zhang, B P ( author ) / Shang, J Z ( author ) / Cai, L E ( author ) / Zhang, J Y ( author ) / Yu, J Z ( author ) / Wang, Q M ( author )
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Published in:Semiconductor Science and Technology ; 26, 5 ; 055013
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Publication date:2011-05-11
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 26, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 055001
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Reliability investigations and improvements of the pLEDMOS for PDP data driver ICsQian, Qinsong / Sun, Weifeng / Li, Haisong / Wu, Hong / Shi, Longxing et al. | 2011
- 055002
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Erbium–oxygen interactions in crystalline siliconFranzò, G / Napolitani, E / Cardile, P / Boninelli, S / Marino, A / Priolo, F et al. | 2011
- 055003
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Enhanced performance of a-IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contactsZou, Xiao / Fang, Guojia / Wan, Jiawei / Liu, Nishuang / Long, Hao / Wang, Haolin / Zhao, Xingzhong et al. | 2011
- 055004
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Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systemsShin, Yun-Sok / Brunner, Roland / Shibatomi, Akihiro / Obata, Toshiaki / Otsuka, Tomohiro / Yoneda, Jun / Shiraki, Yasuhiro / Sawano, Kentarou / Tokura, Yasuhiro / Harada, Yuichi et al. | 2011
- 055005
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High rectifying behavior in Al/Si nanocrystal-embedded SiOxNy/p-Si heterojunctionsJacques, E / Pichon, L / Debieu, O / Gourbilleau, F / Coulon, N et al. | 2011
- 055006
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Liquid-phase-deposited SiO2 on AlGaAs and its applicationLee, Kuan-Wei / Huang, Jung-Sheng / Lu, Yu-Lin / Lee, Fang-Ming / Lin, Hsien-Cheng / Huang, Jian-Jun / Wang, Yeong-Her et al. | 2011
- 055007
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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statisticsIslam, A / Kalna, K et al. | 2011
- 055008
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Remotely screened electron-impurity scattering model for nanoscale MOSFETsTowie, Ewan A / Watling, Jeremy R / Barker, John R et al. | 2011
- 055009
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Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodesChoi, S S / Cho, D H / Choi, C J / Kim, J Y / Yang, J W / Shim, K H et al. | 2011
- 055010
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Generation of energy selective excitations in quantum Hall edge statesLeicht, C / Mirovsky, P / Kaestner, B / Hohls, F / Kashcheyevs, V / Kurganova, E V / Zeitler, U / Weimann, T / Pierz, K / Schumacher, H W et al. | 2011
- 055011
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Fabrication and electrical characterization of pyrrole–aniline copolymer-based Schottky diodesSönmezoğlu, S / Durmuş, C B / Taş, R / Çankaya, G / Can, M et al. | 2011
- 055012
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Evolution of the energy band structure in chemical-bath-deposited CdS thin films studied by optical absorption spectroscopyAşıkoğlu, A / Yükselici, M H et al. | 2011
- 055013
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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVDWu, C M / Zhang, B P / Shang, J Z / Cai, L E / Zhang, J Y / Yu, J Z / Wang, Q M et al. | 2011
- 055014
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Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copperLee, D H / Lee, H K / Yu, J S / Bae, S J / Choi, J H / Kim, D H / Ju, I C / Song, K M / Kim, J M / Shin, C S et al. | 2011
- 055015
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Excitation of relaxation oscillations in a semiconductor superlattice by incident waves: efficient terahertz harmonics generationIgnatov, Anatoly A et al. | 2011
- 055016
-
Low-temperature annealing to enhance efficiency in organic small-molecule solution-processable OLEDsXue, Shanfeng / Fei, Teng / Yao, Liang / Shen, Fangzhong / Zhang, Ming / Liu, Xiaodong / Ma, Yuguang et al. | 2011
- 055017
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Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodesSchramm, A / Polojärvi, V / Hakkarainen, T V / Tukiainen, A / Guina, M et al. | 2011
- 055018
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RF sputtering of epitaxial lead chalcogenide films in argon and krypton plasmaZimin, S P / Amirov, I I / Gorlachev, E S et al. | 2011
- 055019
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Accurate measurement of the formation rate of iron–boron pairs in siliconTan, J / Macdonald, D / Rougieux, F / Cuevas, A et al. | 2011
- 055020
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Deep level defects in GaAs1−xBix/GaAs heterostructuresJiang, Zenan / Beaton, D A / Lewis, R B / Basile, A F / Tiedje, T / Mooney, P M et al. | 2011
- 055021
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Gas-phase doping of silicon with sulfurAstrov, Yu A / Portsel, L M / Lodygin, A N / Shuman, V B et al. | 2011
- 055022
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Highly manufacturable silicon vertical diode switches for new memories using selective epitaxial growth with batch-type equipmentLee, K S / Han, J J / Kim, B H / Lim, H J / Nam, S W / Kang, H K / Chung, C H / Jeong, H S / Park, H H / Jeong, H W et al. | 2011
- 055023
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Analysis of noise spectra in GaAs and GaN Schottky barrier diodesPardo, D / Grajal, J / Pérez, S / Mencía, B / Mateos, J / González, T et al. | 2011
- 055024
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Analytical and numerical studies of p+-emitters in silicon carbide bipolar devicesLevinshtein, M E / Mnatsakanov, T T / Agarwal, A K / Palmour, J W et al. | 2011
- 055025
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Bandedge-engineered quantum well laserAsryan, Levon V / Kryzhanovskaya, Natalia V / Maximov, Mikhail V / Egorov, Anton Yu / Zhukov, Alexey E et al. | 2011