Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs) (English)
Topical Review
- New search for: Ilia Valov
- New search for: Ilia Valov
In:
Semiconductor Science and Technology
;
32
, 9
;
093006
;
2017
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
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Subtitle:Topical Review
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Additional title:Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
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Contributors:Ilia Valov ( author )
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Published in:Semiconductor Science and Technology ; 32, 9 ; 093006
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Publisher:
- New search for: Institute of Physics
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Publication date:2017-09-01
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Size:20 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 32, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 093001
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Entanglement distribution schemes employing coherent photon-to-spin conversion in semiconductor quantum dot circuitsLouis Gaudreau / Alex Bogan / Marek Korkusinski / Sergei Studenikin / D Guy Austing / Andrew S Sachrajda et al. | 2017
- 093002
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Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductorsNecmi Biyikli / Ali Haider et al. | 2017
- 093003
-
Coherent exciton-polariton devicesMichael D Fraser et al. | 2017
- 093004
-
Heterostructures containing dichalcogenides-new materials with predictable nanoarchitectures and novel emergent propertiesDanielle M Hamann / Erik C Hadland / David C Johnson et al. | 2017
- 093005
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Titanium dioxide thin films by atomic layer deposition: a reviewJanne-Petteri Niemelä / Giovanni Marin / Maarit Karppinen et al. | 2017
- 093006
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Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)Ilia Valov et al. | 2017
- 094001
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Conduction spectroscopy of a proximity induced superconducting topological insulatorM P Stehno / N W Hendrickx / M Snelder / T Scholten / Y K Huang / M S Golden / A Brinkman et al. | 2017
- 094002
-
Electrical modulation of weak-antilocalization and spin–orbit interaction in dual gated Ge/Si core/shell nanowiresR Wang / R S Deacon / J Yao / C M Lieber / K Ishibashi et al. | 2017
- 094003
-
As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactorNupur Bhargava / Joe Margetis / John Tolle et al. | 2017
- 094004
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Source/drain eSiGe engineering for FinFET technologyJianwei Peng / Yi Qi / Hsien-Ching Lo / Pei Zhao / Chloe Yong / Jianghu Yan / Xinyuan Dou / Hui Zhan / Yanping Shen / Suresh Regonda et al. | 2017
- 094005
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Low-temperature growth of fully epitaxial CoFe/Ge/Fe3Si layers on Si for vertical-type semiconductor spintronic devicesS Sakai / M Kawano / M Ikawa / H Sato / S Yamada / K Hamaya et al. | 2017
- 094006
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Growth and structural properties of step-graded, high Sn content GeSn layers on GeJ Aubin / J M Hartmann / A Gassenq / J L Rouviere / E Robin / V Delaye / D Cooper / N Mollard / V Reboud / V Calvo et al. | 2017
- 094007
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Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctionsA V Bubis / A O Denisov / S U Piatrusha / I E Batov / V S Khrapai / J Becker / J Treu / D Ruhstorfer / G Koblmüller et al. | 2017
- 094008
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Programming scheme based optimization of hybrid 4T-2R OxRAM NVSRAMSwatilekha Majumdar / Sandeep Kaur Kingra / Manan Suri et al. | 2017
- 095001
-
Highly flexible and electroforming free resistive switching behavior of tungsten disulfide flakes fabricated through advanced printing technologyMuhammad Muqeet Rehman / Ghayas Uddin Siddiqui / Yang Hoi Doh / Kyung Hyun Choi et al. | 2017
- 095002
-
Effect of conduction band non-parabolicity on the optical gain of quantum cascade lasers based on the effective two-band finite difference methodGookbin Cho / Jungho Kim et al. | 2017
- 095003
-
The crystallization behavior of amorphous Ge2Sb2Te5 films induced by a multi-pulsed nanosecond laserT Fan / F R Liu / W Q Li / J C Guo / Y H Wang / N X Sun / F Liu et al. | 2017
- 095004
-
GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrierKefeng Han / Lin Zhu et al. | 2017
- 095005
-
Effect of the back bias on the analog performance of standard FD and UTBB transistors-based self-cascode structuresRodrigo T Doria / Denis Flandre / Renan Trevisoli / Michelly de Souza / Marcelo A Pavanello et al. | 2017
- 095006
-
InAs/GaSb Type-II superlattice photodiode array inter-pixel region blue-shift by femtosecond (fs) laser annealSona Das / Utpal Das et al. | 2017
- 095007
-
Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substratesV V Rumyantsev / D V Kozlov / S V Morozov / M A Fadeev / A M Kadykov / F Teppe / V S Varavin / M V Yakushev / N N Mikhailov / S A Dvoretskii et al. | 2017
- 095008
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Monte Carlo simulation of single-crystalline PbSe nanowire thermal conductivity using first-principle phonon propertiesLei Ma / Riguo Mei / Xuxin Zhao / Hongyuan Sun et al. | 2017
- 095009
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Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxyA M Gilinsky / D V Dmitriev / A I Toropov / K S Zhuravlev et al. | 2017
- 095010
-
Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistorsXiaoci Liang / Chengcai Wang / Jun Liang / Chuan Liu / Yanli Pei et al. | 2017
- 095011
-
Epitaxial growth of cobalt oxide phases on Ru(0001) for spintronic device applicationsOpeyemi Olanipekun / Chad Ladewig / Jeffry A Kelber / Michael D Randle / Jubin Nathawat / Chun-Pui Kwan / Jonathan P Bird / Priyanka Chakraborti / Peter A Dowben / Tao Cheng et al. | 2017
- 095012
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All-printed capacitors with continuous solution dispensing technologyYang Ge / Matthias Plötner / Andreas Berndt / Amit Kumar / Brigitte Voit / Doris Pospiech / Wolf-Joachim Fischer et al. | 2017
- 095013
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The effect of reactive ion etch (RIE) process conditions on ReRAM device performanceK Beckmann / J Holt / W Olin-Ammentorp / Z Alamgir / J Van Nostrand / N C Cady et al. | 2017
- 095014
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Hysteresis free negative total gate capacitance in junctionless transistorsManish Gupta / Abhinav Kranti et al. | 2017
- 095015
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Influence of dopants, particularly carbon, on β-rhombohedral boronH Werheit / K Flachbart / G Pristáš / D Lotnyk / V Filipov / U Kuhlmann / N Shitsevalova / T Lundström et al. | 2017