Quantised dissipative states at breakdown of the quantum Hall effect (English)
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- New search for: M E Cage
- New search for: G Marullo Reedtz
- New search for: D Y Yu
- New search for: C T Van Degrift
- New search for: M E Cage
- New search for: G Marullo Reedtz
- New search for: D Y Yu
- New search for: C T Van Degrift
In:
Semiconductor Science and Technology
;
5
, 4
;
351-354
;
1990
- Article (Journal) / Electronic Resource
-
Title:Quantised dissipative states at breakdown of the quantum Hall effect
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Contributors:
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Published in:Semiconductor Science and Technology ; 5, 4 ; 351-354
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Publication date:1990-04-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 5, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 285
-
Surface phonons in GaAs cylindersM Watt / C M Sotomayor Torres / H E G Arnot / S P Beaumont et al. | 1990
- 291
-
Analytical models for the growth by metal organic vapour phase epitaxy: III. ApplicationsW G J H M van Sark / M H J M de Croon / G J H M Janssen / L J Giling et al. | 1990
- 299
-
Temperature dependence of the Fermi level in the two-zone hybrid model of doped semiconductorsB Radjenovic / D Tjapkin et al. | 1990
- 305
-
Excited-state spectroscopy of confined shallow donor impurities in a multi-quantum wellR T Grimes / M B Stanaway / J M Chamberlain / J L Dunn / M Henini / O H Hughes / G Hill et al. | 1990
- 308
-
Subband spectroscopy in two-dimensional electron gas systemsJ Smoliner / G Berthold / G Strasser / E Gornik / G Weimann / W Schlapp et al. | 1990
- 312
-
Minority carrier transport equations in heavily doped silicon including band tail effects at thermal equilibriumY Pan / M Kleefstra et al. | 1990
- 319
-
Isotope heterostructures selectively doped by neutron transmutationE E Haller et al. | 1990
- 322
-
A new realisation of Schottky diodes on n-type InPC Gaonach / S Cassette / M A Di Forte-Poisson / C Brylinski / M Champagne / A Tardella et al. | 1990
- 328
-
Optical phonons in resonant tunnellingB G R Rudberg et al. | 1990
- 333
-
Charge neutrality in quantum well structuresE S -M Tsui / P Blood / A I Kucharska et al. | 1990
- 340
-
Photoluminescence characterisation of indium-doped and undoped silicon layers grown by molecular beam epitaxyA Henry / W -X Ni / M -A Hasan / G V Hansson / B Monemar et al. | 1990
- 345
-
Thermal stability of strained Si/Si1-xGex/Si structuresG F A van de Walle / L J van IJzendoorn / A A van Gorkum / R A van den Heuvel / A M L Theunissen et al. | 1990
- 348
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The Au/CdTe interface: an investigation of electrical barriers by ballistic electron emission microscopyA E Fowell / R H Williams / B E Richardson / T -H Shen et al. | 1990
- 351
-
Quantised dissipative states at breakdown of the quantum Hall effectM E Cage / G Marullo Reedtz / D Y Yu / C T Van Degrift et al. | 1990
- 355
-
A study of the collector-emitter offset voltage of InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistorsJ J Liou et al. | 1990
- 358
-
Electrochemical carrier profiling to determine the thickness of a thin removed semiconductor layerK Somogyi et al. | 1990
- 361
-
Low-temperature deposition of silicon oxide films by microwave plasma CVD of TEOSS K Ray / C K Maiti / S K Lahiri / N B Chakraborti et al. | 1990
- 364
-
Investigations on the mixed oxide material TiO2-In2O3 in regard to photoelectrolytic hydrogen productionK S Chandra Babu / D Singh / O N Srivastava et al. | 1990
- 369
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Pressure dependence of the Pb centre measured by voltage transient spectroscopyN M Johnson / Wei Shan / P Y Yu et al. | 1990