Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers (English)
Paper
- New search for: San-Dong Guo
- New search for: Jun Dong
- New search for: San-Dong Guo
- New search for: Jun Dong
In:
Semiconductor Science and Technology
;
33
, 8
;
085003
;
2018
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers
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Subtitle:Paper
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Additional title:Biaxial strain tuned electronic structures and power factor in janus transition metal dichalchogenide monolayers
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Contributors:San-Dong Guo ( author ) / Jun Dong ( author )
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Published in:Semiconductor Science and Technology ; 33, 8 ; 085003
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Publisher:
- New search for: Institute of Physics
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Publication date:2018-08-01
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Size:9 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 33, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 08LT01
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Effects of scalability and floating metal on NC-FETs based on a real-space atomic modelXiaoyi Zhang / Xiao Gong / Gengchiau Liang et al. | 2018
- 083001
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GaN meets organic: technologies and devices based on gallium-nitride/organic hybrid structuresFlorian Meierhofer / Linus Krieg / Tobias Voss et al. | 2018
- 084001
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Terahertz photoconductivity and photocarrier dynamics in few-layer hBN/WS2 van der Waals heterostructure laminatesM Bala Murali Krishna / Julien Madéo / Joel Pérez Urquizo / Xing Zhu / Soumya Vinod / Chandra Shekar Tiwary / Pulickel M Ajayan / Keshav M Dani et al. | 2018
- 084002
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Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substratesG A Prando / V Orsi Gordo / J Puustinen / J Hilska / H M Alghamdi / G Som / M Gunes / M Akyol / S Souto / A D Rodrigues et al. | 2018
- 085001
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In situ study of porous silicon thin films thermal oxidation by pulsed laser photoacousticsAtzin David Ruíz Pérez / M B de la Mora / J L Benítez / R Castañeda-Guzmán / Jorge Alejandro Reyes-Esqueda / M Villagrán-Muniz et al. | 2018
- 085002
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Structural, electronic and phononic properties of PtSe2: from monolayer to bulkA Kandemir / B Akbali / Z Kahraman / S V Badalov / M Ozcan / F Iyikanat / H Sahin et al. | 2018
- 085003
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Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayersSan-Dong Guo / Jun Dong et al. | 2018
- 085004
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Influence of lithium doping on the electrical properties and ageing effect of ZnSnO thin film transistorsIn-Hwan Cho / Hai-Woong Park / Kwun-Bum Chung / Chan-Joong Kim / Byung-Hyuk Jun et al. | 2018
- 085005
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Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxyXianhe Liu / Ayush Pandey / David A Laleyan / Kishwar Mashooq / Eric T Reid / Walter Jin Shin / Zetian Mi et al. | 2018
- 085006
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The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide filmsS S Aplesnin / O B Romanova / M N Sitnikov / V V Kretinin / A I Galyas / K I Yanushkevich et al. | 2018
- 085007
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Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperaturesMohammad A Alim / Ali A Rezazadeh / Christophe Gaquiere / Giovanni Crupi et al. | 2018
- 085008
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Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopyAshish Kumar / Jyotsna Dhillon / Shammi Verma / Parmod Kumar / K Asokan / D Kanjilal et al. | 2018
- 085009
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Enhanced performance of amorphous silicon solar cells (110 °C) on flexible substrates with a-SiC:H(p) window layer and H2 plasma treatment at n/i and i/p interfaceRamakrishna Madaka / Venkanna Kanneboina / Pratima Agarwal et al. | 2018
- 085010
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SET analysis and radiation hardening techniques for CMOS LNA topologiesS Mateos-Angulo / M San-Miguel-Montesdeoca / D Mayor-Duarte / S L Khemchandani / J del Pino et al. | 2018
- 085011
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A comparative study of selective dry and wet etching of germanium–tin (Ge1−xSnx) on germaniumYi Han / Yaoyao Li / Yuxin Song / Chaodan Chi / Zhenpu Zhang / Juanjuan Liu / Zhongyunsheng Zhu / Shumin Wang et al. | 2018
- 085012
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Dual-curvature cavity for improved p-type FinFET performanceJianwei Peng / Hsien-Ching Lo / Pei Zhao / Xiaoli He / Yue Hu / Yongjun Shi / Yi Qi / Alina Vinslava / Yanping Shen / Wei Hong et al. | 2018
- 085013
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Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive deviceLi Zhang / Hong Huang / Cong Ye / Kuan-Chang Chang / Rulin Zhang / Qing Xia / Xiaodi Wei / Wei Wei / Wenfeng Wang et al. | 2018
- 085014
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Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platformV Linseis / F Völklein / H Reith / R Hühne / L Schnatmann / K Nielsch / P Woias et al. | 2018
- 085015
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Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperatureHe Zhang / Yaogong Wang / Xiaoning Zhang / Chunliang Liu et al. | 2018