Surface acoustic wave devices for sensor applicationsProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and the China Postdoctoral Science Foundation (CPSF). (English)
Invited Review Papers
- New search for: Liu Bo
- New search for: Chen Xiao
- New search for: Cai Hualin
- New search for: Mohammad Ali Mohammad
- New search for: Tian Xiangguang
- New search for: Tao Luqi
- New search for: Yang Yi
- New search for: Ren Tianling
- New search for: Liu Bo
- New search for: Chen Xiao
- New search for: Cai Hualin
- New search for: Mohammad Ali Mohammad
- New search for: Tian Xiangguang
- New search for: Tao Luqi
- New search for: Yang Yi
- New search for: Ren Tianling
In:
Journal of Semiconductors
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37
, 2
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021001
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2016
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ISSN:
- Article (Journal) / Electronic Resource
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Title:Surface acoustic wave devices for sensor applicationsProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and the China Postdoctoral Science Foundation (CPSF).
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Subtitle:Invited Review Papers
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Additional title:Surface acoustic wave devices for sensor applications
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Contributors:Liu Bo ( author ) / Chen Xiao ( author ) / Cai Hualin ( author ) / Mohammad Ali Mohammad ( author ) / Tian Xiangguang ( author ) / Tao Luqi ( author ) / Yang Yi ( author ) / Ren Tianling ( author )
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Published in:Journal of Semiconductors ; 37, 2 ; 021001
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Publisher:
- New search for: Institute of Physics
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Publication date:2016-02-01
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Size:9 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 37, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 021001
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Surface acoustic wave devices for sensor applicationsProject supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and the China Postdoctoral Science Foundation (CPSF).Liu Bo / Chen Xiao / Cai Hualin / Mohammad Ali Mohammad / Tian Xiangguang / Tao Luqi / Yang Yi / Ren Tianling et al. | 2016
- 022001
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Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivityShoichiro Nakao / Yasushi Hirose / Tetsuya Hasegawa et al. | 2016
- 022002
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Impact of stray charge on interconnect wire via probability model of double-dot systemProject supported by the National Natural Science Foundation of China (No. 61172043) and the Key Program of Shaanxi Provincial Natural Science for Basic Research (No. 2011JZ015).Chen Xiangye / Cai Li / Zeng Qiang / Wang Xinqiao et al. | 2016
- 023001
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Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser depositionTetsuya Shimogaki / Masahiro Takahashi / Masaaki Yamasaki / Taichi Fukuda / Mitsuhiro Higashihata / Hiroshi Ikenoue / Daisuke Nakamura / Tatsuo Okada et al. | 2016
- 023002
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Ammonia-assisted synthesis method for CoTiO3 nanoporous matrixMorteza Enhessari / Ali Salehabadi / Zeinab Nasrollahi / Keyvan Ozaee et al. | 2016
- 023003
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The optimization functions of ICP discharge in preparation of Cu–Zn–Sn precursors and CZTS films by co-evaporationProject supported by the Natural Science Foundation of Guangdong Province, China (No. S2013010012548), the Natural Science Foundation of Guangdong Province, China (No. 10151063101000048), the Key Program of the National Natural Science Foundation of China (No. 61072028), the Guangdong Provincial Natural Science Foundation of China (No. 2014A030313441), and the Guangdong Province and Chinese Ministry of Education Cooperation Project of Industry, Education and Academy (No. 2013B090600063).Li Ye / Chen Junfang / Ma Junhui / Zhou Lifen et al. | 2016
- 023004
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Band gap bowing and crossing of BxGa1−xN alloy investigated by hybrid functional methodProject supported by the Fundamental Research Funds for the Central Universities (No. 2010LKWL03), the Special Fund for Theoretical Physics (No. 11047130), and the National Natural Science Foundation of China (No. 11104345).Jiang Jiaping / Gai Yanqin / Tang Gang et al. | 2016
- 023005
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Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancyProject supported by the National Natural Science Foundation of China (No. 10974077) and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).Sun Guipeng / Yan Jinliang / Niu Peijiang / Meng Delan et al. | 2016
- 024001
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Comprehensive and fully self-consistent modeling of modern semiconductor lasersW. Nakwaski / R. P. Sarzał et al. | 2016
- 024002
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Thermo-electronic solar power conversion with a parabolic concentratorOlawole C. Olukunle / Dilip K. De et al. | 2016
- 024003
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Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FETSangeeta Singh / P. N. Kondekar / Pawan Pal et al. | 2016
- 024004
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A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectricProject supported by the National Natural Science Foundation of China (No. 61176100).Liu Chaowen / Xu Jingping / Liu Lu / Lu Hanhan / Huang Yuan et al. | 2016
- 024005
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Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technologyProject supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).Zhou Jiahui / Chang Hudong / Zhang Xufang / Yang Jingzhi / Liu Guiming / Li Haiou / Liu Honggang et al. | 2016
- 024006
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Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological processProject supported by the Key Laboratory of Nano-Devices and Applications, Nano-Fabrication Facility of SINANO, Chinese Academy of Sciences, the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Project (No. 9140C140101140C14069), and the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449, YJCXS201529).Ji Xian / Zhang Xiaodong / Kang Weihua / Zhang Zhili / Zhou Jiahui / Xu Wenjun / Li Qi / Xiao Gongli / Yin Zhijun / Cai Yong et al. | 2016
- 024007
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70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHzProject supported by the National Natural Science Foundation of China (No. 61306113).Han Tingting / Dun Shaobo / Lü Yuanjie / Gu Guodong / Song Xubo / Wang Yuangang / Xu Peng / Feng Zhihong et al. | 2016
- 024008
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Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFETProject supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).Jia Yunpeng / Su Hongyuan / Jin Rui / Hu Dongqing / Wu Yu et al. | 2016
- 024009
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A high performance InAlN/GaN HEMT with low Ron and gate leakageProject supported by the National Natural Science Foundation of China (No. 61306113).Ma Chunlei / Gu Guodong / Lü Yuanjie et al. | 2016
- 024010
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High power 980 nm broad area distributed feedback laser with first-order gratingsDong Zhen / Zhao Yihao / Zhang Qi / Wang Cuiluan / Li Wei / Liu Suping / Ma Xiaoyu et al. | 2016
- 024011
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A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contactProject supported by the National High Technology Research and Development Program of China (No. 2014AA052601) and the National Natural Science Foundation of China (No. 51277060).Jiang Mengxuan / Shen Z. John / Wang Jun / Yin Xin / Shuai Zhikang / Lu Jiang et al. | 2016
- 025001
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High-stage analog accumulator for TDI CMOS image sensorsProject supported by the National Natural Science Foundation of China (Nos. 61404090, 61434004).Li Jianxin / Huang Fujun / Zong Yong / Gao Jing et al. | 2016
- 025002
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Design and implementation of IEEE 802.11ac MAC controller in 65 nm CMOS processProject supported by the National Great Specific Project of China (No. 2012ZX03004004_001).Cheng Peng / Wu Bin / Hei Yong et al. | 2016
- 025003
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A power-efficient switchable CML driver at 10 GbpsChen Peipei / Li Lei / Liu Huihua et al. | 2016
- 025004
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An ultra-low-voltage rectifier for PE energy harvesting applicationsProject supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044, 61376033) and the National High-Tech Program of China (No. 2013AA014103).Wang Jingmin / Yang Zheng / Zhu Zhangming / Yang Yintang et al. | 2016
- 025005
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A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensationWang Han / Tan Lin et al. | 2016
- 025006
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A highly linear power amplifier for WLANProject supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).Jin Jie / Shi Jia / Ai Baoli / Zhang Xuguang et al. | 2016
- 025007
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A multi-channel analog IC for in vitro neural recordingProject supported by the National Natural Science Foundation of China (No. 61076118).Yuan Feng / Wang Zhigong / Lü Xiaoying et al. | 2016
- 026001
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Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurementsProject supported by the National Natural Science Foundation of China (Nos. 61106080, 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (No. 2013ZX02305).Wang Yiyu / Peng Zhaoyang / Shen Huajun / Li Chengzhan / Wu Jia / Tang Yachao / Zhao Yanli / Chen Ximing / Liu Kean / Liu Xinyu et al. | 2016
- 026002
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The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors propertiesProject supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031, 61464003), the Guangxi Natural Science Foundation (Nos. 2013GXNSFGA019003, 2013GXNSFAA019335), the Project (No. 9140C140101140C14069), the Innovation Project of GUET Graduate Education (No. YJCXS201529), and the National Science & Technology Major Project of China (No. 2011ZX02708-003).Lin Zizeng / Cao Mingmin / Wang Shengkai / Li Qi / Xiao Gongli / Gao Xi / Liu Honggang / Li Haiou et al. | 2016
- 026003
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The optimization of FA/O barrier slurry with respect to removal rate selectivity on patterned Cu wafersProject supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan (No. 2009ZX02308), the Natural Science Foundation of Hebei Province (No. F2012202094), and the Doctoral Program Foundation of Xinjiang Normal University Plan (No. XJNUBS1226).Hu Yi / Li Yan / Liu Yuling / He Yangang et al. | 2016