Improvement of electroluminescence properties of light-emitting porous silicon (English)
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In:
Semiconductor Science and Technology
;
8
, 11
;
2015-2017
;
1993
- Article (Journal) / Electronic Resource
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Title:Improvement of electroluminescence properties of light-emitting porous silicon
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Contributors:
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Published in:Semiconductor Science and Technology ; 8, 11 ; 2015-2017
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Publication date:1993-11-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 8, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1915
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X-ray diffraction from low-dimensional structuresP F Fewster et al. | 1993
- 1915
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X-ray diffraction form low-dimensional structuresFewster, P. F. et al. | 1993
- 1935
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Theoretical treatment of A3B5 chloride vapour-phase epitaxy: growth, doping, optimizationV L Dostov / I P Ipatova / A Yu Kulikov / Yu V Zhyliaev et al. | 1993
- 1944
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The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAsS P Wilson / S Brand / A R Beattie / R A Abram et al. | 1993
- 1957
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Exact eigenfunctions of a two-band semiconductor in a uniform electric fieldR Beresford et al. | 1993
- 1966
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Excitons in indirect-gap AlxGa1-xAsG Oelgart / R Mitdank / P Heidborn et al. | 1993
- 1973
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Observation of the intermediate energy state of the DX centre in AlxGa1-xAs:Te in non-stationary absorption experimentsP Kaczor / Z R Zytkiewicz / L Dobaczewski et al. | 1993
- 1977
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DX states in GaAs/AlAs short-period superlattices doped selectively with siliconP Jeanjean / J Sicart / J L Robert / R Planel / F Mollot et al. | 1993
- 1985
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A study of the electrical properties controlled by residual acceptors in gallium antimonideF Meinardi / A Parisini / L Tarricone et al. | 1993
- 1993
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Breakdown voltage in ultra-thin pin diodesD C Herbert et al. | 1993
- 1999
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Schottky barrier height of CrSi2-Si junctionsR Turan / N Akman et al. | 1993
- 1999
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Schottky burrier height of CrSi~2-Si junctionsTuran, R. / Akman, N. et al. | 1993
- 2003
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Effects of interfacial ordering on the optical properties of Si-Ge superlatticesR J Turton / M Jaros et al. | 1993
- 2010
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Comparisons of quantum well infrared photodetectors grown on different molecular beam epitaxial systemsWilson, P. H. / Lamm, M. / Liu, H. C. / Li, J. et al. | 1993
- 2010
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Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systemsP H Wilson / M Lamm / H C Liu / J Li / M Buchanan / Z R Wasilewski / J G Simmons / W J Schaff et al. | 1993
- 2015
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Improvement of electroluminescence properties of light-emitting porous siliconF L Zhang / P H Hao / G Shi / X Y Hou / D M Huang / Xun Wang et al. | 1993
- 2018
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How hydrogen influences axial growth rate distribution during silicon deposition from silaneH Kuhne et al. | 1993
- 2023
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Effect of dopants on the thermal processing of salicided (titanium dislieided) CMOS structuresChittipeddi, S. / Kelly, M. J. / Velaga, A. N. / Kannan, V. C. et al. | 1993
- 2023
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Effect of dopants on the thermal processing of salicided (titanium disilicided) CMOS structuresS Chittipeddi / M J Kelly / A N Velaga / V C Kannan / C M Dziuba / W T Cochran / B Rambabu et al. | 1993
- 2031
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Extension of the layer-by-layer growth regime of InxGa1-xAs on GaAs (001)N Grandjean / J Massies et al. | 1993
- 2035
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BOOK REVIEW| 1993