Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode (English)
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In:
Semiconductor Science and Technology
;
23
, 7
;
075017
;
2008
- Article (Journal) / Electronic Resource
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Title:Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode
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Contributors:Atanassova, E ( author ) / Stojadinovic, N ( author ) / Paskaleva, A ( author ) / Spassov, D ( author ) / Vracar, L ( author ) / Georgieva, M ( author )
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Published in:Semiconductor Science and Technology ; 23, 7 ; 075017
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Publication date:2008-07-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 23, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 072001
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Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodesMasui, Hisashi / Fellows, Natalie N / Nakamura, Shuji / DenBaars, Steven P et al. | 2008
- 72001
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RAPID COMMUNICATION: Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodesMasui, Hisashi et al. | 2008
- 075001
-
A silicon compatible resonant cavity enhanced photodetector working at 1.55 µmCasalino, M / Sirleto, L / Moretti, L / Rendina, I et al. | 2008
- 075001/1
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A silicon compatible resonant cavity enhanced photodetector working at 1.55 micrometerCasalino, M. / Sirleto, L. / Moretti, L. / Rendina, I. et al. | 2008
- 075002
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Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substratesGuillén, C / Herrero, J et al. | 2008
- 075003
-
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrierGolubović, D S / Vianello, E / Arreghini, A / Driussi, F / van Duuren, M J / Akil, N / Selmi, L / Esseni, D et al. | 2008
- 075003/1
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Programme und retention characteristics of SONOS memory arrays with layered tunnel barrierGolubovic, D.S. / Vianello, E. / Arreghini, A. / Driussi, F. / Duuren, M.J. van / Akil, N. / Selmi, L. / Esseni, D. et al. | 2008
- 075004
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Highly doped p-type 3C–SiC on 6H–SiC substratesLebedev, A A / Abramov, P L / Bogdanova, E V / Lebedev, S P / Nel'son, D K / Oganesyan, G A / Tregubova, A S / Yakimova, R et al. | 2008
- 075005
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Fabrication and electrical properties of Al/Safranin T/n-Si/AuSb structureGüllü, Ö / Aydoğan, Ş / Türüt, A et al. | 2008
- 075005/1
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Fabrication and electrical properties of Al/Safranin T/Ni-Si/AuSb structureGüllü, Ö. / Aydogan, S. / Türüt, A. et al. | 2008
- 075006
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A monolithic (Si) massively broadband non-reverberant monopoleVilches, Antonio / Michelakis, Kostis / Hand, Jeff / Toumazou, Chris et al. | 2008
- 075007
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Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effectLin, Jyi-Tsong / Huang, Kuo-Dong / Hu, Shu-Fen et al. | 2008
- 075008
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FinFET reliability study by forward gated-diode generation–recombination currentMa, Chenyue / Li, Bo / Wei, Yiqun / Zhang, Lining / He, Jin / Zhang, Xing / Lin, Xinnan / Chan, Mansun et al. | 2008
- 075009
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A comparative study on analog/RF performance of UTB GOI and SOI devicesZhuge, Jing / An, Xia / Huang, Ru / Xiao, Han / Hou, Xiaoyu / Wang, Runsheng / Wang, Yangyuan et al. | 2008
- 075010
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Investigation on gold and aluminum contacts for Cd0.8Mn0.2Te crystalsZhang, Jijun / Jie, Wanqi / Hao, Yunxiao / Wang, Xiaoqin et al. | 2008
- 075011
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Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 µm wavelength lightSeong, Hojun / Cho, Kyoungah / Kim, Sangsig et al. | 2008
- 075011/1
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Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 micrometer wavelength lightSeong, Hojung / Cho, Kyoungah / Kim, Sangsig et al. | 2008
- 075012
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Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contactAndersson, H A / Bylund, N / Thungström, G / Nilsson, H-E et al. | 2008
- 075012/1
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Analysis and improvement of the position nonlinearity caused by a residual stress MOS-type position-sensitive detectors with indium tin oxide gate contactAndersson, H.A. / Bylund, N. / Thungström, G. / Nilsson, H.E. et al. | 2008
- 075013
-
Gunn oscillations in planar heterostructure diodesPilgrim, N J / Khalid, A / Dunn, G M / Cumming, D R S et al. | 2008
- 075014
-
Metal contact, resistivity and Hall measurement studies of a quasi monocrystalline porous silicon layer vis-a-vis porous siliconBanerjee, M. / Basu, S. / Saha, H. et al. | 2008
- 075014
-
Metal contact, resistivity and Hall measurement studies of a quasi monocrystalline porous silicon layer vis-à-vis porous siliconBanerjee, M / Basu, S / Saha, H et al. | 2008
- 075015
-
A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tieLin, Jyi-Tsong / Lee, Tai-Yi / Lin, Kao-Cheng et al. | 2008
- 075016
-
Properties of the ubiquitous p–n junction in semiconductor nanowiresZervos, M et al. | 2008
- 075017
-
Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrodeAtanassova, E / Stojadinovic, N / Paskaleva, A / Spassov, D / Vracar, L / Georgieva, M et al. | 2008
- 075017/1
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Constant voltage stress induced current Ta2O5 stacks and its dependence on a gate electrodeAtanassova, E. / Stojadinovic, N. / Paskaleva, A. / Spassov, D. / Vracar, L. / Georgieva, M. et al. | 2008
- 075018
-
Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic applicationTsai, Jung-Hui / Weng, Tzu-Yen / Li, Chien-Ming et al. | 2008
- 075019
-
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retentionXu, N / Liu, L F / Sun, X / Chen, C / Wang, Y / Han, D D / Liu, X Y / Han, R Q / Kang, J F / Yu, B et al. | 2008
- 075020
-
The multi-spacer patterning technique: a non-lithographic technique for terascale integrationCerofolini, G F / Amato, P / Romano, E et al. | 2008
- 075021
-
Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurementsRuan, X Z / Sun, B Q / Ji, Yang / Yang, W / Zhao, J H / Xu, Z Y et al. | 2008
- 075022
-
RF and noise model of gate-all-around MOSFETsLázaro, A / Iñíguez, B et al. | 2008
- 075023
-
Stress-induced voiding study in integrated circuit interconnectsHou, Yuejin / Tan, Cher Ming et al. | 2008
- 075024
-
Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectorsKosyachenko, L A / Maslyanchuk, O L / Gnatyuk, V A / Lambropoulos, C / Rarenko, I M / Sklyarchuk, V M / Sklyarchuk, O F / Zakharuk, Z I et al. | 2008
- 075024
-
Charge collection properties of a CdTe Schottky diode for x- and gamma -rays detectorsKosyachenko, L.A. / Maslyanchuk, O.L. / Gnatyuk, V.A. / Lambropoulos, C. / Rarenko, I.M. / Sklyarchuk, V.M. / Sklyarchuk, O.F. / Zakharuk, Z.I. et al. | 2008
- 075025
-
Novel STI scheme and layout design to suppress the kink effect in LDMOS transistorsWang, Lei / Wang, Jun / Li, Rui / Lee, Poo / Hu, Jian / Qu, Will / Li, Wenjun / Yang, Steve et al. | 2008
- 075026
-
Tight-binding description of patterned grapheneGharekhanlou, Behnaz / Alavi, Marjan / Khorasani, Sina et al. | 2008
- 075027
-
A magnetoresistance device based on a magnetic-barrier nanostructureLiu, Yu / Zhang, Lan-Lan et al. | 2008
- 075028
-
Ion irradiation induced nitrogen mobility in a GaInNAs quantum well laserQiu, Y N / Papaioannou, G / Pozo, J / Rorison, J M / Saarinen, M / Konttinen, J / Viheriälä, J / Leinonen, P / Jouhti, T / Pessa, M et al. | 2008
- 075029
-
Magneto-optical spectroscopy of asymmetric double quantum wells CdSe/CdMnSe/CdSe with semimagnetic coupling barriersReshina, I I / Ivanov, S V / Sedova, I V / Sorokin, S V et al. | 2008
- 075030
-
Studies on fabrication and characterization of a high-performance Al-doped ZnO/n-Si (1 1 1) heterojunction photodetectorIsmail, Raid A / Al-Naimi, Ala / Al-Ani, Alaa A et al. | 2008
- 075031
-
Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substratesSharma, T K / Dixit, V K / Ganguli, Tapas / Singh, S D / Porwal, S / Kumar, R / Tiwari, P / Nath, A K et al. | 2008
- 075032
-
Electrical characterization of transfer transistors with pure and nitirided gate oxides in four-transistor CMOS image pixelsSong, Young-Joo / Sivongsay, Vetpany / Mounphoumy, Khampone / Phanthavong, Bounmy / Khanmvongsa, Vathsana / Keophilavong, Somsathith / Bounphanmy, Somechanh / Phasy, Somkiat / Kim, Mijin / Mheen, Bongki et al. | 2008
- 075032/1
-
Electrical characterization of transfer transistors with pure and nitride gate oxides in four-transistors CMOS image pixelsSong, Young-Joo / Sivongsay, Vetpany / Mounphoumy, Khampone / Phanthavong, Bounmy / Khanmvongsa, Vathsana / Keophilavong, Somsathith / Bounphanmy, Somechanh / Phasy, Somkiat / Kim, Mijin / Mheen, Bongki et al. | 2008
- 075033
-
SONOS memories with embedded silicon nanocrystals in nitrideLiu, Mei-Chun / Chiang, Tsung-Yu / Kuo, Po-Yi / Chou, Ming-Hong / Wu, Yi-Hong / You, Hsin-Chiang / Cheng, Ching-Hwa / Liu, Sheng-Hsien / Yang, Wen-Luh / Lei, Tan-Fu et al. | 2008
- 075034
-
Organic/inorganic hybrid passivation layers for organic thin-film transistorsKim, Woo Jin / Kim, Chang Su / Jo, Sung Jin / Hwang, Hyeon Seok / Ryu, Seung Yoon / Baik, Hong Koo et al. | 2008
- 075035
-
A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structureWu, Dake / Huang, Ru / Wang, Pengfei / Tang, Poren / Wang, Yangyuan et al. | 2008
- 075036
-
Studies of mist deposition in the fabrication of blue organic light emitting diodesShanmugasundaram, K / Price, S C / Li, W / Jiang, H / Huang, J / Wang, Q K / Yang, Y / Ruzyllo, J et al. | 2008
- 075037
-
Schottky diodes on ZnO rods grown homoepitaxially by successive chemical solution depositionRakhshani, A E et al. | 2008
- 075038
-
Process induced sub-surface damage in mechanically ground silicon wafersYang, Yu / De Munck, Koen / Teixeira, Ricardo Cotrin / Swinnen, Bart / Verlinden, Bert / De Wolf, Ingrid et al. | 2008
- 075039
-
On application of electrochemical capacitance–voltage profiling technique for n-type SiCMynbaeva, M / Kayambaki, M / Mynbaev, K / Zekentes, K et al. | 2008
- 075040
-
Gold-enhanced oxidation of MBE-grown silicon nanowiresBüttner, C C / Zakharov, N D / Pippel, E / Gösele, U / Werner, P et al. | 2008
- 075041
-
Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETsSharma, Rupendra Kumar / Gupta, Ritesh / Gupta, Mridula / Gupta, R S et al. | 2008
- 075042
-
Temperature dependence of current–voltage characteristics of an In/p-GaSe:Gd/Au–Sb Schottky barrier diodeDuman, Songül et al. | 2008
- 075043
-
Wavelength-stabilized tilted wave lasers with a narrow vertical beam divergenceNovikov, I I / Shernyakov, Yu M / Maximov, M V / Gordeev, N Yu / Kaluzhniy, N A / Mintairov, S A / Lantratov, V M / Payusov, A S / Shchukin, V A / Ledentsov, N N et al. | 2008
- 075044
-
Emission dynamics of InAs self-assembled quantum dots with different cap layer structuresKong, Ling Min / Feng, Zhe Chuan / Wu, Zheng Yun / Lu, Weijie et al. | 2008
- 075045
-
Spectroscopic behavior of bioconjugated quantum dotsChornokur, G / Ostapenko, S / Emirov, Yu / Korsunska, N E / Sellers, T / Phelan, C et al. | 2008
- 075046
-
Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memoriesKim, Hee Dong / An, Ho-Myoung / Kim, Kyoung Chan / Seo, Yu Jeong / Kim, Tae Geun et al. | 2008
- 075046/1
-
Influence of post-annealing on the electrical properties of metal/oxide/silicon capacitors for flash memoriesKim, Hee Dong / An, Ho-Myoung / Kim, Kyoung Chan / Seo, Yu Jeong / Kim, Tae Geun et al. | 2008
- 075047
-
Optical anisotropy in (1 1 0)-oriented zinc-blende GaN/AlGaN quantum wellsPark, S H et al. | 2008
- 075048
-
Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channelsMatulionis, A / Liberis, J / Šermukšnis, E / Xie, J / Leach, J H / Wu, M / Morkoç, H et al. | 2008
- 075049
-
6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topologyRashmi / Kranti, Abhinav / Armstrong, G Alastair et al. | 2008