Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes (English)
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Paper
- New search for: Boris S Ryvkin
- New search for: Eugene A Avrutin
- New search for: Juha T Kostamovaara
- New search for: Boris S Ryvkin
- New search for: Eugene A Avrutin
- New search for: Juha T Kostamovaara
In:
Semiconductor Science and Technology
;
35
, 8
;
085008
;
2020
-
ISSN:
- Article (Journal) / Electronic Resource
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Title:Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes
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Subtitle:Paper
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Additional title:Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes
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Contributors:
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Published in:Semiconductor Science and Technology ; 35, 8 ; 085008
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Publisher:
- New search for: Institute of Physics
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Publication date:2020-08-01
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Size:10 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 35, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 085008
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Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodesBoris S Ryvkin / Eugene A Avrutin / Juha T Kostamovaara et al. | 2020
- 085009
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Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface FieldManoj K Yadav / Arnab Mondal / Shivangi Shringi / Satinder K Sharma / Ankush Bag et al. | 2020
- 085010
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Device-design optimization of ferroelectric-gated vertical tunnel field-effect transistor to suppress ambipolar currentTaehwan Jung / Changhwan Shin et al. | 2020
- 085011
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Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fieldsJ Schuster / T Y Kim / E Batke / D Reuter / A D Wieck et al. | 2020
- 085012
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Research on 1/f noise degradation of GaN LED caused by γ radiation under high biasQifeng Zhao / Xiangyang Lu / Jinglei Xu / Fajun Yu / Zhang Jincan / Juncai Xu et al. | 2020
- 085013
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Methanol solvent effect on photosensing performance of AZO thin films grown by nebulizer spray pyrolysisK Deva Arun Kumar / Paolo Mele / Joice Sophia Ponraj / Kumar Haunsbhavi / S Varadharajaperumal / Devarajan Alagarasan / H Algarni / Basavaraj Angadi / Prashantha Murahari / K Ramesh et al. | 2020
- 085014
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A 2-D compact DC model for engineered nanowire JAM-MOSFETs valid for all operating regimesKamalaksha Baral / Prince Kr Singh / Sanjay Kumar / Manas Ranjan Tripathy / Ashish Kr Singh / Sweta Chander / S Jit et al. | 2020
- 085015
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The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layersChunyan Song / Xuelin Yang / Ding Wang / Panfeng Ji / Shan Wu / Yue Xu / Maojun Wang / Bo Shen et al. | 2020
- 085016
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All-organic thin film flexible photodetector based on C60 modified PEDOT:PSSJianxin Hao / Li Wang / Yinfei Ma / Peipei Zeng / Luole Guo / Wei Wang / Guihang Liu et al. | 2020
- 085017
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A novel 4H-SiC MOSFET for low switching loss and high-reliability applicationsZhonglin Han / Guan Song / Yun Bai / Hong Chen / Xinyu Liu / Jiang Lu et al. | 2020
- 085018
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Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE modelWeixing Huang / Huilong Zhu / Kunpeng Jia / Zhenhua Wu / Xiaogen Yin / Qiang Huo / Yongkui Zhang et al. | 2020
- 085019
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A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wellsJ Scharnetzky / J M Meyer / M Berl / C Reichl / L Tiemann / W Dietsche / W Wegscheider et al. | 2020
- 085020
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Resistive switching characteristics of UV-assisted room-temperature-fabricated top-electrode-free SnOx ReRAMJungmo Jung / Dongho Shin / Yubin Lee / James Jungho Pak et al. | 2020
- 085021
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Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSbV N Brudnyi / I V Kamenskaya / P A Brudnyi et al. | 2020
- 085022
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Strain compensation by relieving defects in SiGe channel for FinFET technologiesM Prieto-Depedro / I Martin-Bragado et al. | 2020
- 085023
-
Multiple graphene-layer-based heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injectionV Ryzhii / M Ryzhii / T Otsuji / V E Karasik / V Leiman / V Mitin / M S Shur et al. | 2020
- 085024
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Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templatesSahadeb Ghosh / Himanshu Srivastava / P N Rao / Mangla Nand / Pragya Tiwari / A K Srivastava / S N Jha / S K Rai / S D Singh / Tapas Ganguli et al. | 2020
- 085025
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An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gateXu Song / Xiaorong Luo / Jie Wei / Ke Zhang / Wei Su / Jian Fang / Fei Yang et al. | 2020
- 085026
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Calculation of Ge1-xYx (Sn, Pb) work function along (100), (110), (111) directions based on first principleXiao Zhai / Jianjun Song / Xianying Dai / Tianlong Zhao et al. | 2020
- 085027
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Performance dependence of self-aligned dual-gate poly-Si TFTs on localized defective regionsChih-Chieh Hsu / Jin-Xian Li / Po-Tsung Chen / Mojtaba Joodaki et al. | 2020
- 085028
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Current mirror featuring DTMOS for analog single‐event transient mitigation in space applicationJingtian Liu / Xinyu Xu / Qian Sun / Bin Liang / Jianjun Chen / Yaqing Chi / Yang Guo et al. | 2020
- 085029
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Experimental study of interface traps in MOS capacitor with Al-doped HfO2Jiho Seo / Changhwan Shin et al. | 2020
- 085030
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Prospects for high carrier mobility in the cubic germanatesA J E Rowberg / K Krishnaswamy / C G Van de Walle et al. | 2020
- 085031
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Improvement of durability by incorporating nanocrystals in ZnO-based resistive random access memory devicesYong Huang / Jianjie Zhou / Yu Huang / Ruixue Wang et al. | 2020
- 085032
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Impact of the capture time on the series resistance of quantum-well diode lasersA Boni / H J Wünsche / H Wenzel / P Crump et al. | 2020
- 085033
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First-principles investigation of two-dimensional topological insulators BiX (X=H, F, O)Hamoon Fahrvandi / Ebrahim Nadimi / Michael Schreiber et al. | 2020
- 085034
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Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °CPatrick Sims / Patrick Wallace / Lei Liu / Houlong Zhuang / J Kouvetakis / José Menéndez et al. | 2020
- 085035
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Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric fieldShradha Gupta / J K Kaushik / Ankur Gupta / Vikram Kumar / V R Balakrishnan et al. | 2020