Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer (English)
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https://orcid.org/0000-0003-2898-1472
- New search for: Wei, Xing
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https://orcid.org/0000-0002-5316-0011
- New search for: Dai, Rongwang
- New search for: Liu, Yun
- New search for: Wang, Ziwen
- New search for: Li, Minghao
- New search for: Wei, Tao
- New search for: Xue, Zhongying
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https://orcid.org/0000-0003-2898-1472
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https://orcid.org/0000-0002-5316-0011
In:
Semiconductor Science and Technology
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38
, 9
;
2023
- Article (Journal) / Electronic Resource
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Title:Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer
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Contributors:Dai, Rongwang ( author ) / Liu, Yun ( author ) / Wang, Ziwen ( author ) / Li, Minghao ( author ) / Wei, Tao ( author ) / Xue, Zhongying ( author ) / Wei, Xing ( author )
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Published in:
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Publisher:
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Publication date:2023-09-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 38, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Optically excited artificial synapse based on α-In2Se3 FETs on Ta2O5Mohta, Neha / Rao, Ankit / Suri, Priyanka / Nath, Digbijoy N et al. | 2023
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A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoringLi, Ming / Yao, Ruohe / Liu, Yurong et al. | 2023
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Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka bandWang, Pengfei / Mi, Minhan / Chen, Yilin / an, Sirui / Zhou, Yuwei / Zhou, Jiuding / Zhao, Ziyue / Zhu, Qing / Du, Xiang / Gong, Can et al. | 2023
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Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologiesTolêdo, Rodrigo do Nascimento / Martino, Joao Antonio / Der Agopian, Paula Ghedini et al. | 2023
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Hydrothermal synthesis and solar cell application studies of nickel doped zinc oxide nanocompositesMohan, Sonima / Vellakkat, Mini / Reka, U et al. | 2023
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High infrared responsivity of silicon photodetector with titanium-hyperdopingCheng, Li / Yang, Lei / Fu, Jiawei / Cong, Jingkun / Yang, Deren / Yu, Xuegong et al. | 2023
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Analytical modeling of architecture dependent atypical scaling trends in metal–Hf0.5Zr0.5O2–metal-SiO2–Si negative capacitance transistorsSemwal, Sandeep / Kranti, Abhinav et al. | 2023
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Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layerMase, Akira / Dalapati, Pradip / Hayafuji, Ryosuke / Kubo, Toshiharu / Miyoshi, Makoto / Egawa, Takashi et al. | 2023
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Suppression of P-I-N forward leakage current in tunnel field-effect transistorAhmad, Syed Afzal / Alam, Naushad / Ahmad, Shameem et al. | 2023
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Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layerDai, Rongwang / Liu, Yun / Wang, Ziwen / Li, Minghao / Wei, Tao / Xue, Zhongying / Wei, Xing et al. | 2023
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A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converterZhu, Yuhao / Su, Haodong / Li, Fan / Li, Ang / Lei, Xiaohaoyang / Cui, Miao / Lai, Wen-Cheng / Wen, Huiqing / Liu, Wen et al. | 2023
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Analytical model and simulation study of a novel enhancement-mode Ga2O3 MISFET realized by p-GaN gateYi, Bo / Zhang, Song / Zhang, ZhiNing / Cheng, JunJi / Huang, HaiMeng / Kong, MouFu / Yang, HongQiang et al. | 2023
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Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)AM Hassanen, Ahmed / Herranz, Jesus / Geelhaar, Lutz / B Lewis, Ryan et al. | 2023
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Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structuresNguyen, Duong Dai / Deng, Yuchen / Suzuki, Toshi-kazu et al. | 2023