Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE (English)
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- New search for: Lethy, K J
- New search for: Edwards, P R
- New search for: Liu, C
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- New search for: Allsopp, D W E
- New search for: Martin, R W
- New search for: Lethy, K J
- New search for: Edwards, P R
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- New search for: Allsopp, D W E
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In:
Semiconductor Science and Technology
;
27
, 8
;
2012
- Article (Journal) / Electronic Resource
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Title:Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
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Contributors:Lethy, K J ( author ) / Edwards, P R ( author ) / Liu, C ( author ) / Shields, P A ( author ) / Allsopp, D W E ( author ) / Martin, R W ( author )
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Published in:
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Publisher:
- New search for: IOP Publishing
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Publication date:2012-08-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:nanopyramids , 71.55.Eq , hyperspectral imaging , 78.20.−e , 78.60.Hk , 78.67.−n , GaN , cathodoluminescence , nano-ELOG , 78.66.−w
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Source:
Table of contents – Volume 27, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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On the activation of implanted silicon ions in p-In0.53Ga0.47AsDjara, V / Cherkaoui, K / Newcomb, S B / Thomas, K / Pelucchi, E / O'Connell, D / Floyd, L / Dimastrodonato, V / Mereni, L O / Hurley, P K et al. | 2012
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Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterningAli, M / Svensk, O / Riuttanen, L / Kruse, M / Suihkonen, S / Romanov, A E / Törmä, P T / Sopanen, M / Lipsanen, H / Odnoblyudov, M A et al. | 2012
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Silicon spintronics with ferromagnetic tunnel devicesJansen, R / Dash, S P / Sharma, S / Min, B C et al. | 2012
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The Mn site in Mn-doped GaAs nanowires: an EXAFS studyd’Acapito, F / Rovezzi, M / Boscherini, F / Jabeen, F / Bais, G / Piccin, M / Rubini, S / Martelli, F et al. | 2012
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Frequency-dependent dielectric response of HfTaOx-based metal–insulator–metal capacitorsHota, M K / Sarkar, C K / Maiti, C K et al. | 2012
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Tunability of absorption threshold frequencies and Stark shift in the InSb narrow gap spherical quantum layerKazaryan, E M / Kirakosyan, A A / Mughnetsyan, V N / Sarkisyan, H A et al. | 2012
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Single spatial mode 2–2.2 µm diode lasers fabricated by selective wet etchingJung, S / Liang, R / Kipshidze, G / Suchalkin, S / Shterengas, L / Belenky, G et al. | 2012
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Apparent base resistance decomposition by means of small-signal and high-frequency noise analyses of submicron InP/InGaAs HBTsRamirez-Garcia, E / Aniel, F P / Enciso-Aguilar, M A / Zerounian, F et al. | 2012
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Incorporation of transition metals in the hot-wall-epitaxy growth of Bi2Te3 and Sb2Te3Takagaki, Y / Jahn, U / Ramsteiner, M et al. | 2012
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Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer levelDasmahapatra, P / Sexton, J / Missous, M / Shao, C / Kelly, M J et al. | 2012
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Raman scattering characterization of strain in Ge–Si core–shell nanowiresSingh, Rachna / Poweleit, C D / Dailey, Eric / Drucker, Jeff / Menéndez, José et al. | 2012
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Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguidesBianco, F / Fedus, K / Enrichi, F / Pierobon, R / Cazzanelli, M / Ghulinyan, M / Pucker, G / Pavesi, L et al. | 2012
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Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPELethy, K J / Edwards, P R / Liu, C / Shields, P A / Allsopp, D W E / Martin, R W et al. | 2012
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Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonicsSanchez, D / Cerutti, L / Tournié, E et al. | 2012
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Carrier–phonon coupling in GaAs1−xBix/GaAs quantum wellsChernikov, A / Bornwasser, V / Koch, M / Koch, S W / Lu, X / Johnson, S R / Beaton, D A / Tiedje, T / Chatterjee, S et al. | 2012
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Full bridge circuit based on pentacene schottky diodes fabricated on plastic substratesGutierrez-Heredia, G / Martinez-Landeros, V H / Aguirre-Tostado, F S / Shah, P / Gnade, B E / Sotelo-Lerma, M / Quevedo-Lopez, M A et al. | 2012
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Potential profile of the quantum step in semiconductors and the example of GaNŠantić, B / Šantić, N et al. | 2012
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Electrical properties of quasi-vertical Schottky diodesWitte, W / Fahle, D / Koch, H / Heuken, M / Kalisch, H / Vescan, A et al. | 2012
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Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistorsOnodera, Hiraku / Horio, Kazushige et al. | 2012
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Positive and negative effects of oxygen in thermal annealing of p-type GaNWu, L L / Zhao, D G / Jiang, D S / Chen, P / Le, L C / Li, L / Liu, Z S / Zhang, S M / Zhu, J J / Wang, H et al. | 2012