High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers (English)
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In:
Semiconductor Science and Technology
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25
, 3
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032001
;
2010
- Article (Journal) / Electronic Resource
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Title:High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers
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Contributors:Xiong, C ( author ) / Edwards, P R ( author ) / Christmann, G ( author ) / Gu, E ( author ) / Dawson, M D ( author ) / Baumberg, J J ( author ) / Martin, R W ( author ) / Watson, I M ( author )
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Published in:Semiconductor Science and Technology ; 25, 3 ; 032001
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Publication date:2010-03-01
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 25, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 30301
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EDITORIAL: Special issue on Graphene| 2010
- 030301
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Special issue on GrapheneAlberto F Morpurgo / Björn Trauzettel et al. | 2010
- 032001
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High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layersXiong, C / Edwards, P R / Christmann, G / Gu, E / Dawson, M D / Baumberg, J J / Martin, R W / Watson, I M et al. | 2010
- 32001
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RAPID COMMUNICATION: High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layersXiong, C et al. | 2010
- 033001
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Electron–hole asymmetry and energy gaps in bilayer grapheneMucha-Kruczyński, M / McCann, E / Fal'ko, Vladimir I et al. | 2010
- 33001
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TOPICAL REVIEW: Electronhole asymmetry and energy gaps in bilayer grapheneMucha-Kruczyski, M et al. | 2010
- 033002
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Klein tunneling in single and multiple barriers in graphenePereira, J M / Peeters, F M / Chaves, A / Farias, G A et al. | 2010
- 33002
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TOPICAL REVIEW: Klein tunneling in single and multiple barriers in graphenePereira, J M et al. | 2010
- 033003
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Electronic and magnetic structure of graphene nanoribbonsPalacios, J J / Fernández-Rossier, J / Brey, L / Fertig, H A et al. | 2010
- 33003
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TOPICAL REVIEW: Electronic and magnetic structure of graphene nanoribbonsPalacios, J J et al. | 2010
- 034001
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Periodically modulated geometric and electronic structure of graphene on Ru(0 0 0 1)Borca, B / Barja, S / Garnica, M / Hinarejos, J J / Vázquez de Parga, A L / Miranda, R / Guinea, F et al. | 2010
- 034002
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Energy and transport gaps in etched graphene nanoribbonsMolitor, F / Stampfer, C / Güttinger, J / Jacobsen, A / Ihn, T / Ensslin, K et al. | 2010
- 034003
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Graphene rings in magnetic fields: Aharonov–Bohm effect and valley splittingWurm, J / Wimmer, M / Baranger, H U / Richter, K et al. | 2010
- 034004
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Excitonic condensation in a double-layer graphene systemKharitonov, Maxim Yu / Efetov, Konstantin B et al. | 2010
- 034005
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The magnetic field particle–hole excitation spectrum in doped graphene and in a standard two-dimensional electron gasRoldán, R / Goerbig, M O / Fuchs, J-N et al. | 2010
- 034006
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On the spectrum of a magnetic quantum dot in grapheneDe Martino, A / Egger, R et al. | 2010
- 034007
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Metallic proximity effect in ballistic graphene with resonant scatterersTitov, M / Ostrovsky, P M / Gornyi, I V et al. | 2010
- 034008
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Resistance modulation of multilayer graphene controlled by the gate electric fieldMiyazaki, Hisao / Li, Songlin / Kanda, Akinobu / Tsukagoshi, Kazuhito et al. | 2010
- 035001
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The effect of inhomogeneous dopant distribution on the electrical transport properties and thermal stability of CdTe:Cl single crystalsPopovych, V D / Sizov, F F / Parfenjuk, O A / Tsybrii (Ivasiv), Z F et al. | 2010
- 035002
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Dependence of melting, roughness and contact resistances on Ge and Ni content in alloyed AuGe/Ni/Au-type electrical contacts to GaAs/AlGaAs multilayer structuresAbhilash, T S / Kumar, Ch Ravi / Sreedhar, B / Rajaram, G et al. | 2010
- 035003
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A spot-size converter-integrated 1.3 µm TM mode LD for coupling with surface-plasmon polariton waveguidesChoe, Joong-Seon / Kim, Kisoo / Park, Suntak / Kim, Jin Tae / Lee, Jong-Moo / Kim, Min-su / Park, Seung Koo / Ju, Jung Jin et al. | 2010
- 035003/1
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A spot-size converter-integrated 1.3 micron TM mode LD for coupling with surface-plasmon polariton waveguidesChoe, Joong-Seon / Kim, Kisoo / Park, Suntak / Kim, Jin Tae / Lee, Jong-Moo / Kim, Min-Su / Park, Seung Koo / Ju, Jung Jin et al. | 2010
- 035004
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Structural optimization of extremely scaled planar partially insulated field effect transistors (PiFETs)Song, Kwan Jae / Lee, Soon Young / Kim, Dae Hwan / Kim, Dong Myong et al. | 2010
- 035005
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Room temperature spectroscopic characterization of mid-infrared GaInSb quantum-well laser structuresFox, Natasha E / Andreev, A D / Nash, G R / Ashley, T / Hosea, T J C et al. | 2010
- 035006
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Frequency-dependent electrical properties in Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin film for ferroelectric memory applicationTang, M H / Dong, G J / Sugiyama, Y / Ishiwara, H et al. | 2010
- 035007
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Impedance spectroscopy characterization of proton-irradiated GaInP/GaAs/Ge triple-junction solar cellsZhang, Xi / Hu, Jianmin / Wu, Yiyong / Lu, Fang et al. | 2010
- 035008
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Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technologyByeon, Kyeong-Jae / Hong, Eun-Ju / Park, Hyoungwon / Yoon, Kyung-Min / Song, Hyun Don / Lee, Jin Wook / Kim, Sun-Kyung / Cho, Hyun Kyong / Kwon, Ho Ki / Lee, Heon et al. | 2010
- 035009
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Modification of the emission from InSb/AlInSb quantum-well light-emitting diodes using a small permanent magnetMirza, B I / Buckle, L / Nash, G R et al. | 2010
- 035010
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Etching of GaN by microwave plasma of hydrogenTiwari, Rajanish N / Chang, Li et al. | 2010
- 035011
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Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarizationZhang, Jihua / Yang, Chuanren / Wu, Song / Liu, Ying / Zhang, Ming / Chen, Hongwei / Zhang, Wanli / Li, Yanrong et al. | 2010
- 035012
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A 2D analytical model for SCEs in MOSFETs with high-k gate dielectricXie, Qian / Xu, Jun / Ren, Tianling / Taur, Yuan et al. | 2010
- 035012/1
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A 2D analytical mode for SCEs in MOSFETs with high-k gate dielectricXie, Qian / Xu, Jun / Ren, Tianling / Taur, Yuan et al. | 2010
- 035013
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Influence of hydrogen implantation concentration on the characteristics of GaN-based resonant-cavity LEDsHuang, Shih-Yung / Horng, Ray-Hua / Tsai, Yu-Ju / Lin, Po-Rung / Wang, Wei-Kai / Feng, Zhe Chuan / Wuu, Dong-Sing et al. | 2010
- 035014
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The effect of structural parameters and growth temperature on the electron density in asymmetric double-2DEGsPierz, K / Hein, G / Schumacher, B / Pesel, E / Schumacher, H W et al. | 2010
- 035015
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High-frequency compact analytical noise model of gate-all-around MOSFETsLázaro, A / Nae, B / Muthupandian, C / Iñíguez, B et al. | 2010