1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks (English)
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Paper
- New search for: Oh Kee Kwon
- New search for: Chul Wook Lee
- New search for: Young Ahn Leem
- New search for: Ki Soo Kim
- New search for: Su Hwan Oh
- New search for: Eun Soo Nam
- New search for: Oh Kee Kwon
- New search for: Chul Wook Lee
- New search for: Young Ahn Leem
- New search for: Ki Soo Kim
- New search for: Su Hwan Oh
- New search for: Eun Soo Nam
In:
Semiconductor Science and Technology
;
30
, 10
;
105010
;
2015
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ISSN:
- Article (Journal) / Electronic Resource
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Title:1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks
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Subtitle:Paper
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Additional title:1.5-μm and 10-Gb/s etched mesa buried heterostructure DFB-LD for datacenter networks
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Contributors:Oh Kee Kwon ( author ) / Chul Wook Lee ( author ) / Young Ahn Leem ( author ) / Ki Soo Kim ( author ) / Su Hwan Oh ( author ) / Eun Soo Nam ( author )
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Published in:Semiconductor Science and Technology ; 30, 10 ; 105010
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Publisher:
- New search for: Institute of Physics
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Publication date:2015-10-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 30, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 100301
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Preface: Printed electronicsYong-Young Noh / Yong Xu / Mario Caironi / Thomas D Anthopoulos et al. | 2015
- 102001
-
Transverse magnetic focussing of heavy holes in a (100) GaAs quantum wellM Rendell / O Klochan / A Srinivasan / I Farrer / D A Ritchie / A R Hamilton et al. | 2015
- 104001
-
Synthesis of polyaniline-based inks for inkjet printed devices: electrical characterization highlighting the effect of primary and secondary dopingAlessandro Chiolerio / Sergio Bocchini / Francesco Scaravaggi / Samuele Porro / Denis Perrone / Davide Beretta / Mario Caironi / Candido Fabrizio Pirri et al. | 2015
- 104002
-
Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronicsNilushi Wijeyasinghe / Thomas D Anthopoulos et al. | 2015
- 104003
-
The role of printing techniques for large-area dye sensitized solar cellsPaolo Mariani / Luigi Vesce / Aldo Di Carlo et al. | 2015
- 104004
-
Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrateYuqiang Liu / Yuemin Xie / Yuan Liu / Tao Song / Ke-Qin Zhang / Liangsheng Liao / Baoquan Sun et al. | 2015
- 104005
-
Fully-printed, all-polymer integrated twilight switchGiorgio Dell’Erba / Andrea Perinot / Andrea Grimoldi / Dario Natali / Mario Caironi et al. | 2015
- 104006
-
Printed photodetectorsGiuseppina Pace / Andrea Grimoldi / Marco Sampietro / Dario Natali / Mario Caironi et al. | 2015
- 105001
-
Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substratesF Isa / F Pezzoli / G Isella / M Meduňa / C V Falub / E Müller / T Kreiliger / A G Taboada / H von Känel / Leo Miglio et al. | 2015
- 105002
-
Dispersive hybrid states and bandgap in zigzag graphene/BN heterostructuresVan-Truong Tran / Jérôme Saint-Martin / Philippe Dollfus et al. | 2015
- 105003
-
Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistorDonald J Suntrup III / Geetak Gupta / Haoran Li / Stacia Keller / Umesh K Mishra et al. | 2015
- 105004
-
The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistorsNgoc Nguyen / Briana McCall / Robert Alston / Ward Collis / Shanthi Iyer et al. | 2015
- 105005
-
High temperature laser diode based on a single sheet of quantum dotsN N Ledentsov / V A Shchukin / M V Maximov / Yu M Shernyakov / A S Payusov / N Yu Gordeev / S S Rouvimov et al. | 2015
- 105006
-
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applicationsS Binetti / P Garattini / R Mereu / A Le Donne / S Marchionna / A Gasparotto / M Meschia / I Pinus / M Acciarri et al. | 2015
- 105007
-
Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implantZ H Zaidi / K B Lee / I Guiney / H Qian / S Jiang / D J Wallis / C J Humphreys / P A Houston et al. | 2015
- 105008
-
Enhanced Si–Ge interdiffusion in high phosphorus-doped germanium on siliconFeiyang Cai / Yuanwei Dong / Yew Heng Tan / Chuan Seng Tan / Guangrui (Maggie) Xia et al. | 2015
- 105009
-
Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradationDanijel Danković / Ivica Manić / Aneta Prijić / Snežana Djorić-Veljković / Vojkan Davidović / Ninoslav Stojadinović / Zoran Prijić / Snežana Golubović et al. | 2015
- 105010
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1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networksOh Kee Kwon / Chul Wook Lee / Young Ahn Leem / Ki Soo Kim / Su Hwan Oh / Eun Soo Nam et al. | 2015
- 105011
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InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performanceA P Craig / M D Thompson / Z-B Tian / S Krishna / A Krier / A R J Marshall et al. | 2015
- 105012
-
The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphereGuangmin Li / Wei Liu / Yiming Liu / Shuping Lin / Xiaodong Li / Yi Zhang / Zhiqiang Zhou / Qing He / Yun Sun et al. | 2015
- 105013
-
Analysis and suppression of drain current drift in graphene FETsJun-Mo Park / Dongho Lee / Jeoyoung Shim / Taehan Jeon / Kunsun Eom / Byung-Gook Park / Jong-Ho Lee et al. | 2015
- 105014
-
Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applicationsBiplab Sarkar / Bongmook Lee / Veena Misra et al. | 2015
- 105015
-
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wellsKarine Hestroffer / Feng Wu / Haoran Li / Cory Lund / Stacia Keller / James S Speck / Umesh K Mishra et al. | 2015
- 105016
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Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channelsL Ardaravičius / O Kiprijanovič / J Liberis / E Šermukšnis / A Matulionis / R A Ferreyra / V Avrutin / Ü Özgür / H Morkoç et al. | 2015
- 105017
-
High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power applicationYi-Hsuan Chen / William Cheng-Yu Ma / Tien-Sheng Chao et al. | 2015
- 105018
-
Coulomb interaction and spin-orbit coupling calculations of thermoelectric properties of the quaternary chalcogenides Tl2PbXY4 (X = Zr, Hf and Y = S, Se)Sikander Azam / Saleem Ayaz Khan / Jan Minar / Wilayat Khan / Haleem Ud Din / R Khenata / G Murtaza / S Bin-Omran / Souraya Goumri-Said et al. | 2015
- 105019
-
Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiCK C Kragh-Buetow / R S Okojie / D Lukco / S E Mohney et al. | 2015
- 105020
-
InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arraysStacia Keller / Cory Lund / Tyler Whyland / Yanling Hu / Carl Neufeld / Silvia Chan / Steven Wienecke / Feng Wu / Shuji Nakamura / James S Speck et al. | 2015
- 105021
-
Vertical power Schottky barrier diodes using a high-k insulatorMingmin Huang / Xingbi Chen et al. | 2015
- 105022
-
Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diodeAshutosh Kumar / S Nagarajan / M Sopanen / V Kumar / R Singh et al. | 2015
- 105023
-
InAs-based quantum cascade lasers with enhanced confinementRui Q Yang et al. | 2015
- 105024
-
Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFETLeonardo Navarenho de Souza Fino / Enrico Davini Neto / Marcilei Aparecida Guazzelli da Silveira / Christian Renaux / Denis Flandre / Salvador Pinillos Gimenez et al. | 2015
- 105025
-
Quantum dot spin cellular automata for realizing a quantum processorAbolfazl Bayat / Charles E Creffield / John H Jefferson / Michael Pepper / Sougato Bose et al. | 2015
- 105026
-
Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetectionM Lopez-Ponce / A Hierro / V Marín-Borrás / G Tabares / A Kurtz / S Albert / S Agouram / V Muñoz-Sanjosé / E Muñoz / J M Ulloa et al. | 2015
- 105027
-
Nanoscale thermal transport in self-organized epitaxial Ge nanostructures on Si(001)T Frigge / B Hafke / V Tinnemann / T Witte / B Krenzer / M Horn-von Hoegen et al. | 2015
- 105028
-
In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypesChi Xu / J D Gallagher / P M Wallace / C L Senaratne / P Sims / J Menéndez / J Kouvetakis et al. | 2015
- 105029
-
Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detectionHao Ye / Lu Li / Hossein Lotfi / Lin Lei / Rui Q Yang / Joel C Keay / Tetsuya D Mishima / Michael B Santos / Matthew B Johnson et al. | 2015
- 105030
-
Peculiarities of the hydrogenated In(AsN) alloyS Birindelli / M Kesaria / D Giubertoni / G Pettinari / A V Velichko / Q D Zhuang / A Krier / A Patanè / A Polimeni / M Capizzi et al. | 2015
- 105031
-
Design of InP-based metamorphic high-efficiency five-junction solar cells for concentrated photovoltaicsYong Huang / Hui Yang et al. | 2015
- 105032
-
An advanced tunnel oxide layer process for 65 nm NOR floating-gate flash memoriesShengfen Chiu / Yue Xu / Xiaoli Ji / Yiming Liao / Fuwei Wu / Feng Yan et al. | 2015
- 105033
-
Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μmLiang Ma / Xuehong Zhang / Honglai Li / Huang Tan / Yankun Yang / Yadan Xu / Wei Hu / Xiaoli Zhu / Xiujuan Zhuang / Anlian Pan et al. | 2015
- 105034
-
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructuresJ Bergsten / A Malmros / M Tordjman / P Gamarra / C Lacam / M-A di Forte-Poisson / N Rorsman et al. | 2015
- 105035
-
Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructuresC P Allford / R E Legg / R A O’Donnell / P Dawson / M Missous / P D Buckle et al. | 2015
- 105036
-
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxyPavan Kumar Kasanaboina / Sai Krishna Ojha / Shifat Us Sami / C Lewis Reynolds Jr / Yang Liu / Shanthi Iyer et al. | 2015
- 105037
-
Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrateYiqiang Ni / Deqiu Zhou / Zijun Chen / Yue Zheng / Zhiyuan He / Fan Yang / Yao Yao / Guilin Zhou / Zhen Shen / Jian Zhong et al. | 2015
- 105038
-
A model study of the role of workfunction variations in cold field emission from microstructures with inclusion of field enhancementsH Qiu / R P Joshi / A Neuber / J Dickens et al. | 2015