Focused Ion Beam Fabrication (English)
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1990
- Report / Electronic Resource
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Title:Focused Ion Beam Fabrication
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Contributors:Melngailis, John ( author ) / Lezec, Henri J. ( author ) / Musil, Christian R. ( author ) / Mahoney, Leonard J. ( author ) / Chu, Alex ( author ) / Chu, Larry ( author ) / Shepard, Mark I. ( author ) / Antoniadis, Dimitri A. ( author ) / Turner, George W. ( author ) / Woodhouse, John D. ( author )
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Publisher:
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Publication date:1990
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Remarks:Contains reports on thirteen research projects and a list of publications.
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Type of media:Report
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Type of material:Electronic Resource
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Language:English
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Keywords:Doping Gradients in GaAs MESFETs , Focused Ion Beam Fabrication , Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel , Publications , Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range , Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range , Focused Ion Beam Lithography , Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range , Focused Ion Beam Induced Deposition of Platinum , Effect of Dose Rate on Activation of Si Implanted in GaAs , CMOS Transistors Fabricated by Focused Ion Beam Lithography , Tunable Gunn Diode , Light Emission From Tunable Gunn Diodes , Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range , Focused Ion Beam Implantation of GaAs MMICs , CMOS Transistors Fabricated by Focused Ion Beam Implantation , Focused Ion Beam Exposure Combined With Silylation , Focused Ion Beam Implantation of GaAs MESFETs
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Source: