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The report deals with the progress made during the fourth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed first is the progress on Gunn effect research. Work on the following specific topics is reviewed: frequency control studies of LSA oscillators; some harmonic properties of an LSA oscillator; LSA circuit studies; control of silicon contamination in GaAs; a varactor tuned Gunn oscillator; and Gunn effect amplifiers. The progress made on a program on avalanche devices is also described. The following specific topics are reviewed: higher average power TRAPATT considerations; GaAs Schottky barrier IMPATT diodes; nonlinearities of IMPATT reflection amplifiers with two input signals; integrated IMPATT and TRAPATT oscillators; and high-frequency high-efficiency avalanche oscillations. Studies of an experimental Pt-n-p+ punch-through-injection Ku-band diode are reported. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include: ion implantation and diffusion; vacuum expitaxial growth in silicon; and ionization rates in gallium arsenide. (Author)