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The emphasis of the investigation is centered on studies of active microwave effects in avalanche diodes, transferred electron diodes, microwave field-effect transistors, and on related microwave circuit, materials growth, and physical electronic techniques. In Section A, a report is made on the microwave solid state devices and circuits. Included are: Amplifier Properties; IMPATT Diode Load Characteristics; Interaction of Distributed IMPATT Oscillators; An IMPATT Diode Characterization; Microwave Transistor Studies; Compound Semiconductor Transistor Study; Computer Experiments in TRAPATT Diodes; and High Performance TEO. In Section B, a report is made on materials and fabrication techniques. The topics discussed are: The Epitaxial Growth of Thin GaAs Layers; Read Structures; and Electric-Current-Controlled Liquid Phase Epitaxial Growth of GaAs.