Silicon Liquid Phase Epitaxy with Solution Transport by Centrifugal Forces and Investigation and Characterization of Silicon Epitaxial Layers by Transmission Electron Microscopy
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Solution growth of thin epitaxial layers of silicon is outlined. After determination of growth parameters using a tipping growth system, a liquid phase epitaxy apparatus was built in which the solutions are rapidly transported by centrifugal forces. The growth parameters determined by the preliminary tests were obeyed in the centrifugal system. The quality of the epitaxial layers from the centrifugal apparatus were similar to those grown in the tipping system. Layers grown from Ga or in solutions were free of defects. They were p-type with carrier concentration of 10 to the 19th to 20th power/cucm grown from Ga and of 2 times 10 to the 15th power/cucm when grown from In. When grown from Sn, the layers always contained dislocations (due to misfit stresses) and stacking faults.
Silicon Liquid Phase Epitaxy with Solution Transport by Centrifugal Forces and Investigation and Characterization of Silicon Epitaxial Layers by Transmission Electron Microscopy