DC and RF Measurements of the Kink Effect in 0.2 mum Gate Length AlInAS/GainAS/InP Modulation-Doped Field-Effect Transistors (English)
- New search for: L. F. Eastman
- New search for: L. F. Palmateer
- New search for: P. J. Tasker
- New search for: W. J. Schaff
- New search for: L. D. Nguyen
- New search for: L. F. Eastman
- New search for: L. F. Palmateer
- New search for: P. J. Tasker
- New search for: W. J. Schaff
- New search for: L. D. Nguyen
1989
- Report / No indication
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Title:DC and RF Measurements of the Kink Effect in 0.2 mum Gate Length AlInAS/GainAS/InP Modulation-Doped Field-Effect Transistors
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Contributors:L. F. Eastman ( author ) / L. F. Palmateer ( author ) / P. J. Tasker ( author ) / W. J. Schaff ( author ) / L. D. Nguyen ( author )
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Publisher:
- New search for: Cornell Univ., Ithaca, NY. Dept. of Electrical Engineering
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Publication date:1989
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Size:4 pages
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Type of media:Report
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Type of material:No indication
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Language:English
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Contract Number:AD-A213 664/6/XAB; DAAG29-85-K-0213
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Keywords:Semiconductor Devices , Solid State Physics , Conductivity , Flux(Rate) , Gain , Gates(Circuits) , Low frequency , Measurement , Microwave equipment , Microwave frequency , Radio frequency , Reprints , Indium compounds , Phosphides , Doping , Trapping(Charged particles) , Electrical conductivity , Modulation Doped Field Effect Transistors , Kink Effect , MODFETS(Modulation Doped Field Effect Transistors) , Aluminum Indium Arsenides , Gallium Indium Arsenides
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