Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces (English)
- New search for: Neudeck, Philip G.
- New search for: Powell, J. Anthony
- New search for: Trunek, Andrew
- New search for: Spry, David
- New search for: Beheim, Glenn M.
- New search for: Benavage, Emye
- New search for: Abel, Phillip
- New search for: Vetter, William M.
- New search for: Dudley, Michael
- New search for: Neudeck, Philip G.
- New search for: Powell, J. Anthony
- New search for: Trunek, Andrew
- New search for: Spry, David
- New search for: Beheim, Glenn M.
- New search for: Benavage, Emye
- New search for: Abel, Phillip
- New search for: Vetter, William M.
- New search for: Dudley, Michael
In:
Proceedings of the Materials Science Forum
;
389-393
;
2001
- Conference paper / No indication
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Title:Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
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Contributors:Neudeck, Philip G. ( author ) / Powell, J. Anthony ( author ) / Trunek, Andrew ( author ) / Spry, David ( author ) / Beheim, Glenn M. ( author ) / Benavage, Emye ( author ) / Abel, Phillip ( author ) / Vetter, William M. ( author ) / Dudley, Michael ( author )
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Conference:International Conference on Silicon Carbide and Related Materials 2001 ; 2001 ; Tsukuba, Japan
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Published in:
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Publisher:
- New search for: NASA National Aeronautics and Space Administration
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Publication date:2001-10-28
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Type of media:Conference paper
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Type of material:No indication
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Language:English
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Contract Number:GRC-WO-667829; 20150022225
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Keywords:
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Source: