Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry (English)
- New search for: Neudeck, Philip G.
- New search for: Spry, David J.
- New search for: Chen, Liang-Yu
- New search for: Chang, Carl W.
- New search for: Beheim, Glenn M.
- New search for: Okojie, Robert S.
- New search for: Evans, Laura J.
- New search for: Meredith, Roger D.
- New search for: Ferrier, Terry L.
- New search for: Krasowski, Michael J.
- New search for: Prokop, Norman F.
- New search for: Lukco, Dorothy
- New search for: Neudeck, Philip G.
- New search for: Spry, David J.
- New search for: Chen, Liang-Yu
- New search for: Chang, Carl W.
- New search for: Beheim, Glenn M.
- New search for: Okojie, Robert S.
- New search for: Evans, Laura J.
- New search for: Meredith, Roger D.
- New search for: Ferrier, Terry L.
- New search for: Krasowski, Michael J.
- New search for: Prokop, Norman F.
- New search for: Lukco, Dorothy
In:
Proceedings of the Materials Science Forum
;
615-617
;
2008
- Conference paper / No indication
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Title:Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry
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Contributors:Neudeck, Philip G. ( author ) / Spry, David J. ( author ) / Chen, Liang-Yu ( author ) / Chang, Carl W. ( author ) / Beheim, Glenn M. ( author ) / Okojie, Robert S. ( author ) / Evans, Laura J. ( author ) / Meredith, Roger D. ( author ) / Ferrier, Terry L. ( author ) / Krasowski, Michael J. ( author )
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Conference:2008 European Conference on Silicon Carbide and Related Materials ; 2008 ; Barcelona, Spain
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Published in:
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Publisher:
- New search for: NASA National Aeronautics and Space Administration
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Publication date:2008-09-07
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Type of media:Conference paper
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Type of material:No indication
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Language:English
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Contract Number:GRC-WO-667826; 20150022228
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Keywords:
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Source: