New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy (English)
- New search for: Roca-i-Cabarrocas, P.
- New search for: Roca-i-Cabarrocas, P.
- New search for: Hamma, S.
- New search for: Hadjadj, A.
- New search for: Bertomeu, J.
- New search for: Andreu, J.
In:
Applied physics letters
;
69
, 4
; 529-531
;
1996
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ISSN:
- Article (Journal) / Print
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Title:New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopy
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Contributors:
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Published in:Applied physics letters ; 69, 4 ; 529-531
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Publisher:
- New search for: AIP
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Place of publication:Melville, NY
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Publication date:1996
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3400
- New search for: 33.00
- Further information on Basic classification
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Source:
Table of contents – Volume 69, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 443
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Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical propertiesChin, Albert / Chen, W. J. et al. | 1996
- 446
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High‐resolution axial and lateral position sensing using two‐photon excitation of fluorophores by a continuous‐wave Nd:YAG laserFlorin, Ernst‐Ludwig / Ho¨rber, J. K. Heinrich / Stelzer, Ernst H. K. et al. | 1996
- 449
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Quantum boxes as active probes for photonic microstructures: The pillar microcavity caseGe´rard, J. M. / Barrier, D. / Marzin, J. Y. / Kuszelewicz, R. / Manin, L. / Costard, E. / Thierry‐Mieg, V. / Rivera, T. et al. | 1996
- 452
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A vacuum ultraviolet flash lamp with extremely broadened emission spectraKubodera, Shoichi / Kitahara, Mitsuo / Kawanaka, Junji / Sasaki, Wataru / Kurosawa, Kou et al. | 1996
- 455
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Reduced temperature sensitivity of the wavelength of a diode laser in a stress‐engineered hydrostatic packageCohen, Daniel A. / Heimbuch, Mark E. / Coldren, Larry A. et al. | 1996
- 458
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Nonlinear optical properties of lanthanum doped lead titanate thin film using Z‐scan techniqueZhao, Qingchun / Liu, Yun / Shi, Wensheng / Ren, Wei / Zhang, Liangying / Yao, Xi et al. | 1996
- 460
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Interdiffusion as a means of fabricating parabolic quantum wells for the enhancement of the nonlinear third‐order susceptibility by triple resonanceLi, E. Herbert et al. | 1996
- 463
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Reduction of the thermal impedance of vertical‐cavity surface‐emitting lasers after integration with copper substratesMathine, D. L. / Nejad, H. / Allee, D. R. / Droopad, R. / Maracas, G. N. et al. | 1996
- 465
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InAsSb-based mid-infrared lasers (3.8-3.9 mm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor depositionAllerman, A.A. et al. | 1996
- 465
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InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor depositionAllerman, A. A. / Biefeld, R. M. / Kurtz, S. R. et al. | 1996
- 468
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Optical properties of defects in ion implanted silicon carbide probed at lambda=633 nmMusumeci, P. / Calcagno, L. / Grimaldi, M. G. / Foti, G. et al. | 1996
- 468
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Optical properties of defects in ion implanted silicon carbide probed at λ=633 nmMusumeci, P. / Calcagno, L. / Grimaldi, M. G. / Foti, G. et al. | 1996
- 468
-
Optical properties of defects in ion implanted silicon carbide probed at lMusumeci, P. et al. | 1996
- 471
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Laterally oxidized long wavelength cw vertical‐cavity lasersMargalit, Near M. / Babic, Dubravko I. / Streubel, Klaus / Mirin, Richard P. / Mars, Dan E. / Bowers, John E. / Hu, Evelyn L. et al. | 1996
- 473
-
Laser‐plasma interaction during visible‐laser ablation of methodsChang, Jim J. / Warner, Bruce E. et al. | 1996
- 476
-
Vacuum arc discharges preceding high electron field emission from carbon filmsGro¨ning, O. / Ku¨ttel, O. M. / Schaller, E. / Gro¨ning, P. / Schlapbach, L. et al. | 1996
- 479
-
Near infrared absorption and dark conductivity of K1−yLiyTa1−xNbxO3 crystalTong, Xiaolin / Zhang, Min / Yariv, Amnon / Agranat, Aharon / Hofmeister, Rudolf / Leyva, Victor et al. | 1996
- 482
-
Photoinduced synthesis of amorphous SiO2 with tetramethoxysilaneAwazu, Koichi / Onuki, Hideo et al. | 1996
- 485
-
Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor depositionHu, Y. Z. / Zhao, C. Y. / Basa, C. / Gao, W. X. / Irene, E. A. et al. | 1996
- 488
-
High resolution imaging of electronic devices via x‐ray diffraction topographyBeard, W. T. / Green, K. A. / Zhang, X.‐J. / Armstrong, R. W. et al. | 1996
- 491
-
Nanocrystallites in tetrahedral amorphous carbon filmsRavi, S. / Silva, P. / Xu, Shi / Tay, B. X. / Tan, H. S. / Milne, W. I. et al. | 1996
- 494
-
Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopyZhang, Z. / Kulakov, M. A. / Bullemer, B. / Eisele, I. / Zotov, A. V. et al. | 1996
- 497
-
Ion assisted growth of diamondSattel, S. / Robertson, J. / Scheib, M. / Ehrhardt, H. et al. | 1996
- 500
-
Current self‐oscillations in photoexcited type‐II GaAs‐AlAs superlatticesHosoda, M. / Mimura, H. / Ohtani, N. / Tominaga, K. / Watanabe, T. / Fujiwara, K. / Grahn, H. T. et al. | 1996
- 503
-
Gallium vacancies and the yellow luminescence in GaNNeugebauer, Jo¨rg / Van de Walle, Chris G. et al. | 1996
- 506
-
Passivation of Si(111)-7 x 7 by a C60 monolayerDunn, A.W. et al. | 1996
- 506
-
Passivation of Si(111)‐7×7 by a C60 monolayerDunn, A. W. / Moriarty, P. / Upward, M. D. / Beton, P. H. et al. | 1996
- 509
-
He‐plasma assisted epitaxy for highly resistive, optically fast InP‐based materialsMitchell, D. B. / Robinson, B. J. / Thompson, D. A. / Qian, Li / Benjamin, S. D. / Smith, P.W. E. et al. | 1996
- 512
-
Optical effect on thermal emission of semiconductorsChen, G. et al. | 1996
- 514
-
Ohmic contacts on n‐type CdTe and CdZnTe using coherently grown neodymiumBrun‐Le Cunff, D. / Daudin, B. / Rouvie`re, J. L. et al. | 1996
- 517
-
Investigation of charge carrier injection in silicon nitride/silicon junctionsElmiger, J. R. / Kunst, M. et al. | 1996
- 520
-
Evidence of Γ–X sequential resonant tunneling in GaAs/AlAs superlatticesSun, Baoquan / Jiang, Desheng / Liu, Zhenxing / Zhang, Yaohui / Liu, Wei et al. | 1996
- 520
-
Evidence of G-x sequential resonant tunneling in GaAs-AlAs superlatticesSun, Baoquan et al. | 1996
- 523
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Raman scattering of alternating nanocrystalline silicon/amorphous silicon multilayersWu, X. L. / Siu, G. G. / Tong, S. / Liu, X. N. / Yan, F. / Jiang, S. S. / Zhang, X. K. / Feng, D. et al. | 1996
- 526
-
Defects and degradation in ZnO varistorLee, Wei‐I / Young, Ruey‐Ling et al. | 1996
- 529
-
New features of the layer‐by‐layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopyRoca i Cabarrocas, P. / Hamma, S. / Hadjadj, A. / Bertomeu, J. / Andreu, J. et al. | 1996
- 532
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The driving force of Si adsorbate transfer on a Si(001) surfaceDoi, Takahisa / Ichikawa, Masakazu / Hosoki, Shigeyuki et al. | 1996
- 535
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The removal of nitrogen during boron indiffusion in silicon gate oxynitridesEllis, K. A. / Buhrman, R. A. et al. | 1996
- 538
-
Sputtered AIN encapsulant for high-temperature annealing of GaNZolper, J.C. et al. | 1996
- 538
-
Sputtered AlN encapsulant for high‐temperature annealing of GaNZolper, J. C. / Rieger, D. J. / Baca, A. G. / Pearton, S. J. / Lee, J. W. / Stall, R. A. et al. | 1996
- 541
-
Infrared spectroscopy study of the Si–SiO2 interfaceOkuno, Yasutoshi / Park, Kyung‐ho et al. | 1996
- 544
-
Optical near‐field lithography on hydrogen‐passivated silicon surfacesMadsen, Steen / Mu¨llenborn, Matthias / Birkelund, Karen / Grey, Franc¸ois et al. | 1996
- 547
-
Dramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p‐i‐n thin‐film light‐emitting diodes by two‐step hydrogenationLee, Jong‐Wook / Lim, Koeng Su et al. | 1996
- 550
-
Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THzHowells, S. C. / Schlie, L. A. et al. | 1996
- 553
-
Picosecond relaxation and thermal diffusion in amorphous siliconWright, O. B. / Zammit, U. / Marinelli, M. / Gusev, V. E. et al. | 1996
- 556
-
Oxygen contamination of low temperature ultrahigh vacuum‐deposited Ge films on GaAsDubey, Madan / Lareau, Richard T. / Cole, Melanie W. / Jones, Kenneth A. / West, Lawrence C. / Roberts, Charles W. / Piscani, Emil et al. | 1996
- 559
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Mg‐doped p‐type GaN grown by reactive molecular beam epitaxyKim, Wook / Salvador, A. / Botchkarev, A. E. / Aktas, O. / Mohammad, S. N. / Morcoc¸, H. et al. | 1996
- 562
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Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixingHe, J.‐J. / Charbonneau, S. / Poole, P. J. / Aers, G. C. / Feng, Y. / Koteles, E. S. / Goldberg, R. D. / Mitchell, I. V. et al. | 1996
- 565
-
Real time observation of reconstruction transitions on GaAs (111)B surface by scanning electron microscopyRen, Hong‐Wen / Tanaka, Masaaki / Nishinaga, Tatau et al. | 1996
- 568
-
Near‐edge x‐ray absorption of carbon materials for determining bond hybridization in mixed sp2/sp3 bonded materialsCoffman, F. L. / Cao, R. / Pianetta, P. A. / Kapoor, S. / Kelly, M. / Terminello, L. J. et al. | 1996
- 571
-
High power failure of superconducting microwave filters: Investigation by means of thermal imagingHampel, G. / Kolodner, P. / Gammel, P. L. / Polakos, P. A. / de Obaldia, E. / Mankiewich, P. M. / Anderson, A. / Slattery, R. / Zhang, D. / Liang, G. C. et al. | 1996
- 574
-
Different epitaxial growth modes of Bi2Sr2Ca2Cu3Ox on MgOOhkubo, M. / Brecht, E. / Linker, G. / Geerk, J. / Meyer, O. et al. | 1996
- 577
-
Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7−x bicrystal filmsHeinig, N. F. / Redwing, R. D. / Tsu, I Fei / Gurevich, A. / Nordman, J. E. / Babcock, S. E. / Larbalestier, D. C. et al. | 1996
- 580
-
A kinetic mechanism for the formation of aligned (Bi,Pb)2Sr 2Ca2Cu3O10 in a powder‐in‐tube processed tapeWang, Y.‐L. / Bian, W. / Zhu, Y. / Cai, Z.‐X. / Welch, D. O. / Sabatini, R. L. / Suenaga, M. / Thurston, T. R. et al. | 1996
- 583
-
Polarized neutron reflectometry study of an exchange biased Fe3O4/NiO multilayerBall, A. R. / Leenaers, A. J. G. / van der Zaag, P. J. / Shaw, K. A. / Singer, B. / Lind, D. M. / Fredrikze, H. / Rekveldt, M.Th. et al. | 1996
- 586
-
Variable range hopping conduction in LaC2, CeC2, or GdC2 crystals encapsulated carbon nanocagesYosida, Yositaka / Oguro, Isamu et al. | 1996
- 589
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CUMULATIVE AUTHOR INDEX| 1996