Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry (English)
- New search for: Rivory, J.
- New search for: Rivory, J.
In:
Thin solid films
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313
; 334-341
;
1998
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ISSN:
- Article (Journal) / Print
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Title:Characterization of inhomogeneous dielectric films by spectroscopic ellipsometry
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Contributors:Rivory, J. ( author )
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Published in:Thin solid films ; 313 ; 334-341
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Place of publication:Amsterdam [u.a.] Elsevier
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Publication date:1998
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Classification:
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Source:
Table of contents – Volume 313
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Spectroscopic ellipsometry: a historical overviewVedam, K. et al. | 1998
- 10
-
Ellipsometric investigations of piezo-optical effectsCardona, Manuel et al. | 1998
- 18
-
Advances in multichannel spectroscopic ellipsometryCollins, R.W. et al. | 1998
- 33
-
Spectroscopic ellipsometry data analysis: measured versus calculated quantitiesJellison Jr, G.E. et al. | 1998
- 41
-
Evaluation of interferometric ellipsometer systems with a time resolution of one microsecond and fasterHemmes, K. et al. | 1998
- 48
-
Complete Mueller matrix measurement with a single high frequency modulationCompain, Eric et al. | 1998
- 54
-
Spectrophotopolarimeter based on multiple reflections in a coated dielectric slabAzzam, R.M.A. et al. | 1998
- 59
-
Broadband spectral operation of a rotating-compensator ellipsometerOpsal, J. et al. | 1998
- 63
-
Development of a phase-sensitive ellipsometer and application to the real-time analysis of chromogenic WO3 films during the coloration processMasetti, E. et al. | 1998
- 69
-
Spectroscopic ellipsometry with compensator and X-ray specular reflectivity for characterization of thin optical layers on transparent substratesBertin, F. et al. | 1998
- 74
-
Systematic errors in fixed polarizer, rotating polarizer, sample, fixed analyzer spectroscopic ellipsometryBertucci, S. et al. | 1998
- 79
-
Simultaneous determination of reflectance spectra along with {psi(E), cap delta(E)} in multichannel ellipsometry: applications to instrument calibration and reduction of real-time dataAn, I. / Lee, J. / Hong, B. / Collins, R. W. et al. | 1998
- 80
-
Simultaneous determination of reflectance spectra along with {P(E), Delta(E)} in multichannel ellipsometry: applications to instrument calibration and reduction of real-time dataAn, Ilsin et al. | 1998
- 86
-
Spectrogoniometry and the WANTED method for thickness and refractive index determinationMartinez-Anton, J.C. et al. | 1998
- 91
-
Effects of depolarization of polarimetric components on null ellipsometryNee, Soe-Mie F. et al. | 1998
- 98
-
Depolarization-mixed polarization corrections of ellipsometry spectraRossow, U. et al. | 1998
- 103
-
Application of the degree of polarization to film thickness gradientsRichter, Uwe et al. | 1998
- 109
-
Measurement of the absorption edge of thick transparent substrates using the incoherent reflection model and spectroscopic UV-visible-near IR ellipsometryKildemo, M. et al. | 1998
- 115
-
Multiple sample analysis of spectroscopic ellipsometry data of semi-transparent filmsJärrendahl, K. et al. | 1998
- 120
-
Toward a priori selection of ellipsometry angles and wavelengths using a high performance semantic databaseUrban III, F.K. et al. | 1998
- 125
-
Multiple minima in the ellipsometric error functionAlterovitz, Samuel A. et al. | 1998
- 129
-
Analysis of general ambiguity of inverse ellipsometric problemPolovinkin, V.G. et al. | 1998
- 133
-
Analytic representations of the dielectric functions of materials for device and structural modelingLeng, J. et al. | 1998
- 138
-
Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growthJohs, B. et al. | 1998
- 144
-
Analysis of optical spectra by Fourier methodsYoo, S.D. et al. | 1998
- 150
-
A modified learning strategy for neural networks to support spectroscopic ellipsometric data evaluationRédei, Lászlo et al. | 1998
- 157
-
A new algorithm for real-time thin film thickness estimation given in situ multiwavelength ellipsometry using an extended Kalman filterGalarza, C.G. et al. | 1998
- 162
-
Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometryBell, K.A. et al. | 1998
- 168
-
Characterization of highly strained silicon-germanium alloys grown on silicon substrates using spectroscopic ellipsometryLee, Hosun et al. | 1998
- 172
-
Optical properties and band structure of Ge~l~-~yC~y and Ge-rich Si~1~-~x~-~yGe~xC~y alloysJunge, K. E. / Voss, N. R. / Lange, R. / Dolan, J. M. / Zollner, S. / Dashiell, M. / Hits, D. A. / Orner, B. A. / Jonczyk, R. / Kolodzey, J. et al. | 1998
- 173
-
Optical properties and band structure of Ge1-yCy and Ge-rich Si1-x-yGexCy alloysJunge, K.E. et al. | 1998
- 178
-
Dielectric function modeling for In1-yAlyAs on InPKamlet, Leonard I. et al. | 1998
- 184
-
Analysis of ellipsometric and photoemission spectra of diluted magnetic semiconductors by hybridization interaction mechanismKim, Young-Dong et al. | 1998
- 188
-
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin filmsEdwards, N.V. et al. | 1998
- 194
-
Spectroscopic ellipsometry characterization of thin-film silicon nitrideJellison, G.E. et al. | 1998
- 199
-
Characterization of the optical properties of PECVD SiNx films using ellipsometry and reflectometryAsinovsky, L. et al. | 1998
- 206
-
Visible and infrared optical constants of electrochromic materials for emissivity modulation applicationsHale, Jeffrey S. et al. | 1998
- 211
-
Optical properties of lead lanthanum zirconate titanate amorphous thin filmsZhu, Derui et al. | 1998
- 215
-
Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel methodSuzuki, Iwao et al. | 1998
- 219
-
Optical characterization of Ru2Si3 by spectroscopic ellipsometry, UV-VIS-NIR spectroscopy and band structure calculationsHenrion, W. et al. | 1998
- 223
-
Theoretical and experimental determination of optical and magneto-optical properties of LuFe2 single crystalLee, S.J. et al. | 1998
- 229
-
Ellipsometric study of the influence of the order-disorder phase transition on the optical properties and electronic structures of FeAl alloy filmsLee, Y.P. et al. | 1998
- 233
-
The medium-related optical constants of noble metals observed by ellipsometric studyWang, Yu et al. | 1998
- 238
-
Characterization of epitaxial silicon germanium thin films by spectroscopic ellipsometryYgartua, Carlos et al. | 1998
- 244
-
Influence of roughness and grain dimension on the optical functions of polycrystalline silicon filmsBorghesi, A. et al. | 1998
- 249
-
Characterization and metrology of the diffusion doped polysilicon using ellipsometryAsinovsky, Leo et al. | 1998
- 255
-
Surface disorder production during plasma immersion implantationLohner, T. et al. | 1998
- 260
-
Comparative study of polysilicon-on-oxide using spectroscopic ellipsometry, atomic force microscopy, and transmission electron microscopyPetrik, P. et al. | 1998
- 265
-
Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layersYamaguchi, Tomuo et al. | 1998
- 271
-
Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometryLeng, J.M. et al. | 1998
- 277
-
Optical properties of bonded silicon silicide on insulator (S2OI) - a new substrate for electronic and optical devicesNayar, V. et al. | 1998
- 282
-
A multi-sample, multi-wavelength, multi-angle investigation of the interface layer between silicon and thermally grown silicon dioxideHerzinger, C.M. et al. | 1998
- 287
-
A spectroscopic immersion ellipsometry study of SiO2-Si interface roughness for electron cyclotron resonance plasma and thermally oxidized Si surfacesZhao, C. et al. | 1998
- 293
-
Optical characterization of silicon dioxide layers grown on silicon under different growth conditionsCho, Yong Jai et al. | 1998
- 299
-
Spectroellipsometric characterization of thin silicon nitride filmsJiang, Zhong-Tao et al. | 1998
- 304
-
Characterization of PVD TiN uniformityAsinovsky, Leo et al. | 1998
- 309
-
Characterization of titanium nitride (TiN) films on various substrates using spectrophotometry, beam profile reflectometry, beam profile ellipsometry and spectroscopic beam profile ellipsometryLeng, J.M. et al. | 1998
- 315
-
An ellipsometric study of Ni, Mo and NixN films deposited on SiTarasenko, A.A. et al. | 1998
- 320
-
Spectral dependence of the complex refractive index shift across the semiconductor-metal transition in thermally-oxidized vanadiumSvitasheva, S.N. et al. | 1998
- 324
-
Generalized ellipsometry and complex optical systemsSchubert, M. et al. | 1998
- 334
-
Characterization of inhomogeneous dielectric films by spectroscopic ellipsometryRivory, J. et al. | 1998
- 342
-
Determination of optical anisotropy in calcite from ultraviolet to mid-infrared by generalized ellipsometryThompson, Daniel W. et al. | 1998
- 348
-
Spectroscopic ellipsometry measurements on an anisotropic organic crystal: potassium acid phtalateSassella, A. et al. | 1998
- 352
-
Anisotropic dielectric response and surface aging of mercuric iodide crystal studied by variable angle spectroscopic ellipsometryYao, H. et al. | 1998
- 357
-
Spectroscopic ellipsometry studies of the optical properties of doped poly(3,4-ethylenedioxythiophene): an anisotropic metalPettersson, Leif A.A. et al. | 1998
- 363
-
A spectroscopic anisotropy ellipsometry study of YBa2Cu3O7-x superconductorsMichaelis, A. et al. | 1998
- 369
-
In situ measurement of principal refractive indices of thin films by two-angle ellipsometryHodgkinson, Ian et al. | 1998
- 374
-
Rotating-compensator multichannel transmission ellipsometry of a thin-film helicoidal bianisotropic mediumRovira, P.I. et al. | 1998
- 380
-
Spectroscopic ellipsometric characterization of transparent thin film amorphous electronic materials: integrated analysisPopov, K.V. et al. | 1998
- 385
-
Characterization of graded refractive index silicon oxynitride thin films by spectroscopic ellipsometryCallard, S. et al. | 1998
- 390
-
Composition profiling of graded dielectric function materials by spectroscopic ellipsometryTrolier-McKinstry, S. et al. | 1998
- 395
-
Spectroscopic ellipsometry characterization of indium tin oxide film microstructure and optical constantsSynowicki, R.A. et al. | 1998
- 399
-
Plasma etching of submicron devices: in situ monitoring and control by multi-wavelength ellipsometryMaynard, H.L. et al. | 1998
- 407
-
Complementary in-situ and post-deposition diagnostics of thin film semiconductor structuresPickering, C. et al. | 1998
- 417
-
A square law for the analysis of real time ellipsometric nucleation and growth dataHu, Y.Z. et al. | 1998
- 421
-
Atomic scale characterization of the initial stage of hydrogenated silicon growthNakamura, Takuya et al. | 1998
- 425
-
In situ ellipsometry for monitoring nucleation and growth of silicon on silicon dioxideBasa, C. et al. | 1998
- 431
-
Real-time monitoring of synchrotron-radiation-excited Si homoepitaxy on Si(100) by spectroscopic ellipsometryAkazawa, H. et al. | 1998
- 436
-
High-speed, high-accuracy optical measurements of polycrystalline silicon for process controlBenson, Tyrone E. et al. | 1998
- 443
-
In situ spectroscopic ellipsometry for advanced process control in vertical furnacesLehnert, W. et al. | 1998
- 447
-
Evaluation of automated spectroscopic ellipsometry for in-line process control - ESPRIT semiconductor equipment assessment (SEA) project 'IMPROVE'Pickering, C. et al. | 1998
- 455
-
An in situ and ex situ ellipsometry comparison of the interfaces of Si and GaAs resulting from thermal and plasma oxidationLefebvre, P.R. et al. | 1998
- 460
-
In situ spectroscopic ellipsometric investigation of vacuum annealed and oxidized porous silicon layersFried, M. et al. | 1998
- 465
-
Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealingWakagi, M. et al. | 1998
- 470
-
Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structuresKoh, Joohyun et al. | 1998
- 475
-
Depth-profiles in compositionally-graded amorphous silicon alloy thin films analyzed by real-time spectroscopic ellipsometryFujiwara, H. et al. | 1998
- 480
-
Adapted wavelength methods for in situ ellipsometryCallard, S. et al. | 1998
- 485
-
A direct robust feedback method for growth control of optical coatings by multiwavelength ellipsometryKildemo, M. et al. | 1998
- 491
-
Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometryJohs, B. et al. | 1998
- 497
-
Spectroscopic ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPETrepk, T. et al. | 1998
- 502
-
In situ ellipsometric monitoring of GaAs surface modifications during plasma processing: chemistry and kineticsLosurdo, M. et al. | 1998
- 507
-
Application of real-time spectroscopic ellipsometry for the development of low-temperature diamond film growth processesLee, J. et al. | 1998
- 512
-
In situ ellipsometric diagnostics of multilayer thin film deposition during sputteringGao, Xiang et al. | 1998
- 517
-
Observation of silver film growth using an in situ ultra-high vacuum spectroscopic ellipsometerKawabata, Shuichi et al. | 1998
- 523
-
Spectroscopic ellipsometry on gold clusters embedded in a Si(111) surfaceMümmler, K. et al. | 1998
- 528
-
Present status and capabilities for the theoretical calculation of surface optical propertiesDel Sole, R. et al. | 1998
- 534
-
Epioptics: progress and opportunityMcGilp, J.F. et al. | 1998
- 538
-
Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometryZettler, J.-T. et al. | 1998
- 545
-
Interface, surface and bulk anisotropies of heterostructuresYasuda, T. et al. | 1998
- 553
-
H-terminated silicon: spectroscopic ellipsometry measurements correlated to the surface electronic propertiesAngermann, H. et al. | 1998
- 558
-
Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic statesMantese, L. et al. | 1998
- 562
-
Ellipsometric study of tellurium molecular beam interaction with dehydrogenated vicinal silicon surfacesShvets, V.A. et al. | 1998
- 566
-
Adsorption of Ga on stepped Si(001) probed by resonant optical second harmonic generationChandola, S. et al. | 1998
- 569
-
Theory of femtosecond ellipsometry in Ge at 1.5 eVZollner, Stefan et al. | 1998
- 575
-
Linear and non-linear spectroscopy of GaAs and GaP: theory versus experimentShkrebtii, A.I. et al. | 1998
- 580
-
Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductorsCarline, R.T. et al. | 1998
- 584
-
Dielectric changes of GaAs surfaces determined using the Kramers-Kronig analysis of surface photoabsorption spectraUwai, Kunihiko et al. | 1998
- 588
-
Verification of GaAs-AlAs superlattice theory by spectroscopic ellipsometryMo, D. et al. | 1998
- 591
-
Ellipsometry on monolayer films of InAs and AlAs embedded in GaAs and of InP embedded in GaPSchmidt, H. et al. | 1998
- 595
-
Spectral-ellipsometric investigations on semiconductor resonatorsJungk, G. et al. | 1998
- 600
-
Ellipsometric studies on semiconductor microcavity IR-detector structuresRheinländer, Bernd et al. | 1998
- 605
-
In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs-InP heterostructure by spectroscopic and kinetic ellipsometrySudo, Shinya et al. | 1998
- 610
-
Real-time growth monitoring of InGaAs-InP-HBT structures with reflectance anisotropy spectroscopyArens, M. et al. | 1998
- 615
-
Real-time optical characterization of GaP heterostructures by p-polarized reflectanceDietz, N. et al. | 1998
- 621
-
Ellipsometric and reflectance-anisotropy measurements on rotating samplesHaberland, K. et al. | 1998
- 626
-
Spectroscopic ellipsometry in the infrared rangeDrevillon, Bernard et al. | 1998
- 632
-
High accuracy IR ellipsometer working with a Ge Brewster angle reflection polarizer and grid analyzerLuttmann, Michel et al. | 1998
- 643
-
Far infrared ellipsometry using synchrotron radiation: the out-of-plane response of La2-xSrxCuO4Henn, R. et al. | 1998
- 650
-
Far infrared ellipsometric measurements of (GaAs)n-(AlxGa1-xAs)n superlattice films by means of synchrotron radiationWold, E. et al. | 1998
- 657
-
Ellipsometric study of Fano resonance in heavily doped p-type Si and SiGe alloysHumlicek, J. et al. | 1998
- 662
-
Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profilesTiwald, Thomas E. et al. | 1998
- 668
-
Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSbSnyder, P.G. et al. | 1998
- 672
-
Application of infrared fourier transform phase-modulated ellipsometry to the characterization of silicon-based amorphous thin filmsCanillas, A. et al. | 1998
- 677
-
Visible and infrared ellipsometry study of ion assisted SiO2 filmsSouche, D. et al. | 1998
- 683
-
Infrared and UV-visible ellipsometric study of WO3 electrochromic thin filmsPascual, E. et al. | 1998
- 688
-
Infrared ellipsometry of LiFHumlicek, J. et al. | 1998
- 693
-
Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometrySchubert, M. et al. | 1998
- 698
-
In situ characterization of cubic boron nitride film growth in the IR spectral regionBarth, K.-L. et al. | 1998
- 705
-
In situ infrared ellipsometry study of the growth of hydrogenated amorphous carbon thin filmsHeitz, T. et al. | 1998
- 709
-
Infrared ellipsometric analysis of organic film-on-substrate samplesRöseler, Arnulf et al. | 1998
- 714
-
IR ellipsometry studies of polymers and oxygen plasma-treated polymersBungay, Corey L. et al. | 1998
- 719
-
Determination of the mid-IR optical constants of water and lubricants using IR ellipsometry combined with an ATR cellTiwald, Thomas E. et al. | 1998
- 723
-
Infrared spectroscopic ellipsometry for residual water detection in annealed sol-gel thin layersBruynooghe, S. et al. | 1998
- 728
-
Non-destructive optical characterisation of chromium conversion layers on aluminiumSchram, T. et al. | 1998
- 733
-
The optical constants of metallic island films as used for surface enhanced infrared absorptionRöseler, Arnulf et al. | 1998
- 738
-
In situ infrared spectroscopic ellipsometry for blanket aluminum chemical vapor deposition on TiN and on SiO2-SiWeidner, M. et al. | 1998
- 743
-
Deep ultra-violet measurements of SiON anti-reflective coatings by spectroscopic ellipsometryDefranoux, Christophe et al. | 1998
- 746
-
Spectroscopic ellipsometry measurements of AlxGa1-xN in the energy range 3-25 eVWethkamp, T. et al. | 1998
- 752
-
Ellipsometry in the extreme ultraviolet region with multilayer polarizersYamamoto, Masaki et al. | 1998
- 757
-
An anisotropy microellipsometry (AME) study of anodic film formation on Ti and Zr single grainsMichaelis, A. et al. | 1998
- 765
-
Spectroscopic ellipsometry and biology: recent developments and challengesArwin, H. et al. | 1998
- 776
-
Spectroscopic ellipsometry of electrochemical precipitation and oxidation of nickel hydroxide filmsKong, Fanping et al. | 1998
- 782
-
A study of quantitative electrochemical analysis through a spectroellipsometric technique with a new functionHuang, Z.Q. et al. | 1998
- 786
-
Ellipsometric model for two-dimensional phase transition in Langmuir monolayersTronin, A. et al. | 1998
- 791
-
Anisotropy in Langmuir-Blodgett films studied by generalized spectroscopic ellipsometryLecourt, B. et al. | 1998
- 796
-
Spectroscopic ellipsometry of fullerene embedded Langmuir-Blodgett films with surface plasmon excitationBortchagovsky, Eugene et al. | 1998
- 801
-
Application of time-resolved spectroellipsometry to the study of liquid crystal reorientation dynamicsFukazawa, Tomoyuki et al. | 1998
- 805
-
Glass transition temperature and thermal expansion behaviour of polymer films investigated by variable temperature spectroscopic ellipsometryKahle, O. et al. | 1998
- 808
-
Ellipsemetric investigation of thick polymer filmsForcht, K. / Gombert, A. / Joerger, R. / Koehl, M. et al. | 1998
- 810
-
Ellipsometric investigation of thick polymer filmsForcht, K. et al. | 1998
- 816
-
Characterization of biaxially-stretched plastic films by generalized ellipsometryElman, J.F. et al. | 1998
- 821
-
Investigation of layered microdroplets using ellipsometric techniquesVoué, M. et al. | 1998
- 827
-
Protein adsorption in thermally oxidized porous silicon layersZangooie, S. et al. | 1998
- 833
-
Ellipsometric penetration of turbid media: depolarization and surface characterizationSilverman, M.P. et al. | 1998