Simulation of surface roughness effects inERDA (English)
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In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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136
, 1
; 623-627
;
1998
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ISSN:
- Article (Journal) / Print
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Title:Simulation of surface roughness effects inERDA
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- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1998
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Source:
Table of contents – Volume 136, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Structural and electrical characterisation of semiconductor materials using a nuclear microprobeJamieson, D.N. et al. | 1998
- 14
-
Characterisation of atmospheric fine particles using IBAtechniquesCohen, David D. et al. | 1998
- 23
-
Strain and defect imaging in thin crystals using a nuclear microprobeBreese, M.B.H. et al. | 1998
- 35
-
Future analytical needs for industry and technologyBaglin, J.E.E. et al. | 1998
- 42
-
Report on the round table session on: Near surface analysis and charge exchange studies with high-resolution spectrographsBoerma, D.O. et al. | 1998
- 47
-
Energy loss and charge exchange: statistics and atomisticsSigmund, P. et al. | 1998
- 55
-
Parameterization of nuclear reactions cross section using R-matrixtheoryBerthoumieux, E. et al. | 1998
- 60
-
Evaluation of non-Rutherford proton elastic scattering crosssection for carbonGurbich, A.F. et al. | 1998
- 66
-
Revised cross sections of the 32S(d,p)33SreactionsHealy, M.J.F. et al. | 1998
- 72
-
Total cross section of the 14N(d,pg)15N nuclear reaction for analytical applicationsvan Bebber, H. et al. | 1998
- 72
-
Total cross section of the ^1^4N(d,pgamma)^1^5N nuclear reaction for analytical applicationsVan Bebber, H. / Borucki, L. / Farzin, K. / Kiss, A. Z. / Schulte, W. H. et al. | 1998
- 77
-
Elastic scattering cross sections for the analysis of helium by 1Hbackscattering and hydrogen by 4HeERDNurmela, A. et al. | 1998
- 81
-
Deviations from Rutherford backscattering cross section for backscattering of 6Li ions from fluorine between2.5 and 7MeVPastuovic, Z. et al. | 1998
- 86
-
Proton elastic scattering cross section on carbon from 350keV to 3MeVMazoni, S. et al. | 1998
- 91
-
Impact-parameter dependence of energy loss of swift light ions ingoldArnoldbik, W.M. et al. | 1998
- 98
-
Measurement of heavy-ion stopping powers by combining Doppler shift attenuation and transmission methodsArstila, K. et al. | 1998
- 103
-
Influence of the chemical state on the stopping of protons and He-ions in some oxidesBauer, P. et al. | 1998
- 109
-
Stopping cross section measurements of Ti thin filmsCliment-Font, A. et al. | 1998
- 114
-
Slowing down of relativistic heavy ions and new applicationsGeissel, Hans et al. | 1998
- 125
-
Improved calculations of the electronic energy loss under channeling conditionsGrande, P.L. et al. | 1998
- 132
-
Angular dependent energy loss of 0.8-2.0MeVHeions channeled along the Si<100> directionAzevedo, G.de M. et al. | 1998
- 137
-
A method of determining the stopping power of lightions in crystalchannels in the backscattering geometryKokkoris, M. et al. | 1998
- 141
-
RBS-ERD simulation problems: Stopping powers, nuclear reactions and detector resolutionZiegler, J.F. et al. | 1998
- 147
-
Range parameters of gold and lead in carbon and carbon in gold at reduced energies of 10^-^3 < < 1Friedland, E. / Kalbitzer, S. / Hayes, M. / Klatt, C. / Konac, G. / Langpape, C. et al. | 1998
- 147
-
Range parameters of gold and lead in carbon and carbon in gold at reduced energies of 10-3Friedland, E. et al. | 1998
- 153
-
Low energy ion backscattering spectrometry of multi-layer targetsKlatt, Ch et al. | 1998
- 159
-
Energy loss and straggling of HandHeions of keVenergies in SiandCKonac, G. et al. | 1998
- 166
-
Ta, Au and ThL X-ray energy shifts and yields induced by 0.6, 1.2, 2.4 and 4MeV-nucleon KrionsEl Masri, Y. et al. | 1998
- 173
-
High resolution study of the KX-ray spectra from lowZ elementsKavcic, M. et al. | 1998
- 179
-
Energy straggling induced errors in heavy-ion PIXEanalysisTadic, T. et al. | 1998
- 184
-
LX-ray production cross sections of mediumZ elements by 4HeionimpactOrlic, I. et al. | 1998
- 189
-
PIXEcross sections for some moderately toxic heavy metalsDe Cesare, N. et al. | 1998
- 196
-
A polynomial curve for ionization cross sections of the atomic K-shell induced by protons and heavier ionsRomo-Kröger, Carlos M. et al. | 1998
- 200
-
Theoretical intensity distributions of KX-ray satellite spectra emitted from KandCrUda, M. et al. | 1998
- 204
-
Nuclear reaction analysis of deuterium in ultrathin films of SiO2 onSiBaumvol, I.J.R. et al. | 1998
- 209
-
Hydrogen effect on solid phase epitaxy of Si on Si(001) surfaceHasegawa, Masataka et al. | 1998
- 214
-
Interpretation of ion channeling results from epitaxial Pt thin films and Co-Pt multilayersMcIntyre, P.C. et al. | 1998
- 220
-
Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substratesAlves, E. et al. | 1998
- 225
-
Depth profiling sulphur in bulk CdTe and CdTe-CdS thin film heterojunctionsLane, D.W. et al. | 1998
- 231
-
Characterization of high nitrogen content carbon nitride thin films by RBSand infrared techniquesMéndez, J.M. et al. | 1998
- 236
-
Growth and characterization of carbon nitride thin films prepared by laser ablationSoto, R. et al. | 1998
- 241
-
RBSas a tool for topographic modelling of polycrystalline thin film interactionsBaglin, J.E.E. et al. | 1998
- 247
-
High precision Rutherford backscattering characterisation of 3-Dobjects implanted by plasma immersion ion implantationBarradas, N.P. et al. | 1998
- 253
-
RBSstudies of the intercalation compound HgxTiS2: Morphology and stagingButz, T. et al. | 1998
- 258
-
Analysis of a-BxCy:Hz coatings with IBAtechniquesGiorginis, G. et al. | 1998
- 263
-
Epitaxial regrowth of C- and N-implanted silicon and a-quartzHarbsmeier, F. et al. | 1998
- 263
-
Epitaxial regrowth of C- and N-implanted silicon and -quartzHarbsmeier, F. / Bolse, W. / Da Silva, M. R. / Da Silva, M. F. / Soares, J. C. et al. | 1998
- 268
-
Structural characterization of metastable FeSi films and of Fe-FeSimultilayersMoons, R. et al. | 1998
- 273
-
Composition analysis of Codoped FeSix films by combining standard and heavy-ionRBSBohne, W. et al. | 1998
- 278
-
Interfacial roughness of multilayered TiN-ZrN coatingsTavares, C.J. et al. | 1998
- 283
-
Rbs analysis of the diffusion of nano-size spheres in a polymermatrixCole, Douglas H. et al. | 1998
- 290
-
Ion beam analysis and alpha spectrometry of sources electrodeposited on several backingsFerrero Calabuig, J.L. et al. | 1998
- 297
-
Application of heavy-ionRBS to compositional analysis of thin filmsNiwa, Hiroaki et al. | 1998
- 301
-
First stages of low temperature and low pressure carbonization of Si(001) in acetyleneStedile, F.C. et al. | 1998
- 308
-
Modelling the sorption of mercury(II) on (hydr)oxides: Application of ion beam analysis to sorption processesTiffreau, Christophe et al. | 1998
- 313
-
Nuclear microprobe analysis and imaging: Current state of the art performancesWatt, F. et al. | 1998
- 318
-
Scanning proton microprobe applied to analysis of individual aerosol particles from Amazon BasinGerab, Fábio et al. | 1998
- 324
-
Characterisation of single aerosol particles from Debrecen region, Hungary using microPIXERajta, I. et al. | 1998
- 329
-
Ion microprobe analyses of ancient human boneJankuhn, St et al. | 1998
- 334
-
Proton and X-ray microprobes in the studies of the mineralization processRokita, E. et al. | 1998
- 339
-
An external milli-beam for archaeometric applications on the AGLAEIBA facility of the Louvre museumCalligaro, T. et al. | 1998
- 344
-
344-349 Observation of surface topography using an RBS microbeamSimon, A. / Paszti, F. / Uzonyi, I. / Manuaba, A. / Kiss, A. Z. / Rajta, I. et al. | 1998
- 344
-
Observation of surface topography using an RBSmicrobeamSimon, A. et al. | 1998
- 350
-
Application of grazing exit angle in RBSmicroprobe measurementsSimon, A. et al. | 1998
- 357
-
Nuclear reaction microanalysis: Akey for the study of uranium dioxide corrosion mechanismsTrocellier, Patrick et al. | 1998
- 362
-
Photon-tagged nuclear reaction analysis- Evaluation of the technique for a nuclear microprobeKristiansson, P. et al. | 1998
- 368
-
High energy resolution PIXEanalysis using focused MeV heavy ion beamsMokuno, Y. et al. | 1998
- 373
-
Microanalysis of masklessly fabricated microstructures using nuclear microprobePark, Y.K. et al. | 1998
- 379
-
Maskless fabrication of 3-dimensional microstructures in PMMA using a nuclear microprobede Kerckhove, D.G. et al. | 1998
- 385
-
A high resolution beam scanning system for deep ion beam lithographySanchez, J.L. et al. | 1998
- 390
-
Development of a fast multi-parameter data acquisition system for microbeam analysesSakai, T. et al. | 1998
- 395
-
Determination of the strain depth profile in solid-phase epitaxially grown SiGelayers using RBS-channelingRodriguez, A. et al. | 1998
- 400
-
RBS-channeling analysis of damage and annealing processes of Nb-implantedTiO2Aoki, Y. et al. | 1998
- 404
-
RBS-channeling and TEMstudies on the regrowth of low temperature argon ion amorphized lithium tantalate LiTaO3 singlecrystalZhang, Z. et al. | 1998
- 410
-
Channelling and low energy electron induced X-ray spectroscopy on neon implanted beryllium single crystalDeconninck, B. et al. | 1998
- 415
-
Measurement of laser annealed SiCGe by nuclear microprobe analysisCampbell, M.M. et al. | 1998
- 421
-
Lattice site location of thulium and erbium implanted GaAsAlves, E. et al. | 1998
- 426
-
Lattice site determination of Cr in low doped lithium niobate single crystals using PIXE-channelingKling, A. et al. | 1998
- 431
-
Lattice site location of HfinLiNbO3: Influence of dopant concentration and crystal stoichiometryMarques, J.G. et al. | 1998
- 436
-
Ion implantation in TiO2: Effect of the charge state on the lattice site occupationMeyer, O. et al. | 1998
- 442
-
Lattice site location and annealing behavior of WimplantedTiO2da Silva, R.C. et al. | 1998
- 447
-
Lattice location of oxygen atoms in UO2 single crystals leached in waterNowicki, L. et al. | 1998
- 453
-
Analysis of semiconductors by ion channelling: Applications and pitfallsWilliams, J.S. et al. | 1998
- 460
-
Nucleation and growth of platelet bubble structures in Heimplanted siliconFichtner, P.F.P. et al. | 1998
- 465
-
A channeling investigation of the structural modifications in uranium dioxide submitted to swift-ion irradiation and aqueouscorrosionGarrido, F. et al. | 1998
- 471
-
Backscattering-channeling study of high-dose rare-earth implants into SiVantomme, A. et al. | 1998
- 478
-
The dose effect of silicon implantation on hydrogen trapping in aluminumOgura, Masahiko et al. | 1998
- 483
-
Thermal behavior of hydrogen in helium-implanted high-purity SUS316LOgura, Masahiko et al. | 1998
- 488
-
Rutherford backscattering analysis of damage in ion implanted GaAs-Al0.44Ga0.56AsWendler, E. et al. | 1998
- 494
-
GRID spectroscopy - a new nuclear method for lattice site localization of foreign atomsWesch, W. et al. | 1998
- 499
-
Ion beam channeling study on the damage accumulation in yttria-stabilized cubic zirconiaYasuda, Kazuhiro et al. | 1998
- 505
-
Generation and relief of mechanical stresses in ion irradiated SiCandSiO2Harbsmeier, Felix et al. | 1998
- 511
-
Modification of silicon-carbon film properties under high energy ion beam irradiationRedondas, X. et al. | 1998
- 516
-
Light element impurities in ion beam bombarded Au-Al layersMarkwitz, A. et al. | 1998
- 521
-
High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonancesGosset, L.G. et al. | 1998
- 528
-
Detection and depth profiling of ^1^9F using a resonance at 2313 keV in the ^1^9F(,p)^2^2Ne nuclear reactionBorgardt, J. D. / Ashbaugh, M. D. / McIntyre, L. C. / Stoner, J. O. / Gregory, R. B. / Azrak, M. / Wetzel, J. et al. | 1998
- 528
-
Detection and depth profiling of 19F using a resonance at 2313keV in the 19F(a,p)22Ne nuclear reactionBorgardt, J.D. et al. | 1998
- 533
-
Morphological investigation of porous samples by resonant backscattering spectrometryPászti, F. et al. | 1998
- 540
-
Ultra-high depth resolution RBS and SIMS of the modification of a Ge delta in Si during 2keVO2+ sputteringArnoldbik, W.M. et al. | 1998
- 545
-
Narrow nuclear resonance position or crosssection shapemeasurements with a highprecision computercontrolled beamenergy scanningsystemAmsel, G. et al. | 1998
- 551
-
Study of ion implantation profiles by the PIXEtechniqueMidy, P. et al. | 1998
- 557
-
Oxygen depth profiling in TiOx-SiO2 prepared by sol-gel method using 16O(a,a)16O resonant backscatteringMiyagawa, Y. et al. | 1998
- 557
-
Oxygen depth profiling in TiO~x/SiO~2 prepared by sol-gel method using ^1^6O(, )^1^6O resonant backscatteringMiyagawa, Y. / Saitoh, K. / Nakao, S. / Nonami, T. / Kato, K. / Taoda, H. / Miyagawa, S. et al. | 1998
- 563
-
Annealing behaviour and ranges of implanted ions in III-VandII-VI compound semiconductor materialsVäkeväinen, K. et al. | 1998
- 568
-
On anomalous concentration depth profiles of atoms implanted intopolymersHnatowicz, V. et al. | 1998
- 574
-
Nonequilibrium charge states of recoil ions in high resolution elastic recoil detection analysisDollinger, G. et al. | 1998
- 579
-
Quantitative trace hydrogen distributions in natural diamond using 3D-micro-ERDAmicroscopyMaclear, R.D. et al. | 1998
- 583
-
Helium bubbles in silicon: Study of the residual helium content using elastic recoil detection analysisKaschny, J.R. et al. | 1998
- 587
-
Blocking- and channeling-ERDA with heavy ionsNolte, H. et al. | 1998
- 594
-
Elastic recoil detection analysis with heavy ion beamsDavies, J.A. et al. | 1998
- 603
-
Elastic recoil detection with single atomic layer depth resolution .Dollinger, G. et al. | 1998
- 611
-
The development of a facility for heavy-ion elastic recoil detection analysis at the Australian National UniversityTimmers, H. et al. | 1998
- 616
-
Extremely thin silicon DeltaEdetectors for ion beam analysisWhitlow, Harry J. et al. | 1998
- 616
-
Extremely thin silicon cap deltaE detectors for ion beam analysisWhitlow, H. J. / Winzell, T. / Thungstroem, G. et al. | 1998
- 623
-
Simulation of surface roughness effects inERDAYesil, I.M. et al. | 1998
- 628
-
Influence of surface roughness on measuring depth profiles and the total amount of implanted ions by RBS and ERDABehrisch, R. et al. | 1998
- 633
-
The Berlin time-of-flight ERDAsetupBohne, W. et al. | 1998
- 638
-
A compact cap deltaE-E~r~e~s detector for elastic recoil detection with high sensitivityBergmaier, A. / Dollinger, G. / Frey, C. M. et al. | 1998
- 638
-
A compact DeltaE-Eres detector for elastic recoil detection with high sensitivityBergmaier, A. et al. | 1998
- 644
-
Time-of-flight ERDA of dual implanted metalsDytlewski, N. et al. | 1998
- 649
-
Limitations to depth resolution in high-energy, heavy-ion elastic recoil detection analysisElliman, R.G. et al. | 1998
- 654
-
Quantitative compositional depth profiling of Si1-x-yGexcy thin films by simultaneous elastic recoil detection and Rutherford backscatteringspectrometryGujrathi, S.C. et al. | 1998
- 661
-
Elastic recoil detection using time-of-flight for analysis of TiN-AlSiCu-TiN-Ti contact metallization structuresGujrathi, S.C. et al. | 1998
- 669
-
Complementary scattered and recoiled ion data from ToF-E heavy ion elastic recoil detection analysisJohnston, P.N. et al. | 1998
- 674
-
In situ ERDAstudies of ion drift processes during anodic bonding of alkali-borosilicate glass to metalKreissig, U. et al. | 1998
- 680
-
Application of ERDAmethod to study hydrogen and helium in Ti, Zr and NbmembranesNagata, S. et al. | 1998
- 685
-
Application of a DeltaE-Etelescope for sensitive ERDAmeasurement of hydrogenSweeney, R.J. et al. | 1998
- 685
-
Application of a cap deltaE-E telescope for sensitive ERDA measurement of hydrogenSweeney, R. J. / Prozesky, V. M. / Churms, C. L. / Padayachee, J. / Springhorn, K. et al. | 1998
- 689
-
Ion beam analysis of oxidised a-C:D layers onBe -Acomparison of 4He RBS and 28Si ERDanalysisRoth, J. et al. | 1998
- 695
-
A new setup for elastic recoil analysis using ion induced electron emission for particle identificationSteinbauer, E. et al. | 1998
- 701
-
Theoretical approximation of energy distribution of elastically recoiled hydrogen atomsSzilágyi, E. et al. | 1998
- 707
-
Radiation damage during heavy ion elastic recoil detection analysis of insulating materialsWalker, S.R. et al. | 1998
- 713
-
Multiple scattering effects in depth resolution of elastic recoilWielunski, L. S. / Szilagyi, E. / Harding, G. L. et al. | 1998
- 713
-
Multiple scattering effects in depth resolution of elastic recoil detectionWielunski, Leszek S. et al. | 1998
- 719
-
Mass and energy dispersive elastic recoil detection studies of low temperature Si-Pd-GaAs and Si-Pd-AlxGa(1-x)As interfacial reactionsZhang, Yanwen et al. | 1998
- 724
-
ERD-TOF and HIRBS with 1.7MV tandem acceleratorKim, Y.S. et al. | 1998
- 729
-
High energy heavy ions in materials characterization at NSCPelletronAvasthi, D.K. et al. | 1998
- 736
-
Radioactive ion beams and techniques for solid state researchCorreia, J.G. et al. | 1998
- 744
-
Electron emission channeling with position-sensitive detectorsWahl, U. et al. | 1998
- 751
-
Annealing behavior of ZnTe investigated with 111mCd-emission channelingBharuth-Ram, K. et al. | 1998
- 756
-
Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopyAchtziger, N. et al. | 1998
- 763
-
Depth-selective defect analysis of Si implanted with As+ under channeling conditions using a variable-energy positron beamHirata, K. et al. | 1998
- 768
-
Slow positron implantation spectroscopy of high current ion nitrided austenitic stainless steelAnwand, W. et al. | 1998
- 773
-
Comparative study of kinetic energy spectra and mass distributions of Tan+ ions sputtered from tantalum by atomic and molecular ion bombardmentBelykh, S.F. et al. | 1998
- 779
-
Combined TOF-MS-RBS analysis of LiF thin films bombarded by MeV nitrogen ionsPereira, J.A.M. et al. | 1998
- 784
-
Study of iodine migration in zirconia using stable and radioactive ionimplantationChevarier, N. et al. | 1998
- 788
-
Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBSandGDOS complementary analysesFreire Jr, F.L. et al. | 1998
- 793
-
Measurement of excess energies of ion beams extracted from a microwave ion sourceSakudo, N. et al. | 1998
- 798
-
A novel analysis system of synchrotron-orbital-radiation-light induced photoemission coupled with ion scattering: SORISKido, Y. et al. | 1998
- 798
-
A novel analysis system of synchrotron-orbital-radiation-light induced photoemission coupled with ion scattering: SORIKido, Y. / Namba, H. / Nishimura, T. / Ikeda, A. / Yan, Y. / Yagishita, A. et al. | 1998
- 804
-
Experimental test of the single adatom exchange model in surfactant-mediated growth of GeonSi(100)Bailes III, A.A. et al. | 1998
- 810
-
Cyclotron-based high energy ion channelingvan IJzendoorn, L.J. et al. | 1998
- 816
-
Channeling and blocking measurements on quasicrystalsPlachke, D. et al. | 1998
- 822
-
Design of the entrance ion optics for SIMSandLEIS in situ monitoring of deposition processesPr°usa, S. et al. | 1998
- 825
-
The use of novel beam scanning techniques to image channeling patterns with a scanning nuclear microprobeSaint, A. et al. | 1998
- 831
-
Identification of an unusual source of background signals in energy dispersive PIXEanalysis-A detective storyHietel, B. et al. | 1998
- 837
-
Enhanced X-ray yields from insulating samplesJesus, A.P. et al. | 1998
- 841
-
Development of the RMIT external beam facility forPIXEMoser, M. et al. | 1998
- 846
-
Provenance study of rubies from a Parthian statuette by PIXEanalysisCalligaro, T. et al. | 1998
- 851
-
PIXE and SEM studies of Tartesic gold artefactsOntalba Salamanca, M.A. et al. | 1998
- 858
-
Weathering of glass in moist and polluted airCummings, K. et al. | 1998
- 863
-
Non-destructive evaluation of glass corrosion statesMäder, M. et al. | 1998
- 869
-
Insight into the usewear mechanism of archaeological flints by implantation of a marker ion and PIXE analysis of experimental toolsChristensen, M. et al. | 1998
- 875
-
South American precious metals and the European economy: Ascientific adventure in the Discoveries timeGuerra, M.F. et al. | 1998
- 880
-
PIXE analysis of Salado polychrome ceramics of the American SouthwestGosser, Dennis C. et al. | 1998
- 888
-
Analysis of Mexican obsidians by IBA techniquesMurillo, G. et al. | 1998
- 893
-
PIXE analysis of pottery from the recovery of a renaissance wreckZucchiatti, A. et al. | 1998
- 897
-
Non-destructive analysis and appraisal of paper-like objectsDing, Huansheng et al. | 1998
- 902
-
Initial inter-laboratory testing of the Rossendorf-Oxford (ROX97) secondary standard for X-ray analysisNeelmeijer, C. et al. | 1998
- 908
-
IBAanalysis of a possible therapeutic ancient tooth inlayAndrade, E. et al. | 1998
- 913
-
Amalgam components drift in teeth-toxicity risks: Apreliminary approachCarvalho, M.L. et al. | 1998
- 919
-
Measurement of trace elements in tree rings using the PIXEmethodAoki, Toru et al. | 1998
- 923
-
Target and matrix problems in the determination of trace elements in wood material byPIXERomo-Kröger, C.M. et al. | 1998
- 928
-
PIXE analysis of proteins from a photochemical centerSolis, C. et al. | 1998
- 932
-
Quantification byPIXE of metallic sites in proteins separated by electrophoresisStrivay, D. et al. | 1998
- 936
-
Investigation of the calcium content in joint cartilage: Is it connected with (early arthrotic) changes in cartilage structure?Reinert, T. et al. | 1998
- 941
-
Air particulate matter characterisation of a rural area in PortugalAlves, L.C. et al. | 1998
- 948
-
Time resolved aerosol monitoring in the urban centre of SowetoFormenti, P. et al. | 1998
- 955
-
PIXE, PIGE and ion chromatography of aerosol particles from northeast Amazon BasinGerab, Fábio et al. | 1998
- 961
-
Source profile derivation for an arc welding shop using time sequenced sampling and PIXEanalysisFormenti, P. et al. | 1998
- 966
-
Investigation of the particulate derived from indigenous zinc smelting using PIXE analytical techniqueWang, Guanghua et al. | 1998
- 970
-
A study of atmospheric aerosols from five sites in Mexico city usingPIXEMiranda, J. et al. | 1998
- 975
-
External-beam PIGE for fluorine determination in atmospheric aerosolCalastrini, F. et al. | 1998
- 981
-
Quality assurance of environmental PIXEanalysis in PragueNejedly, Z. et al. | 1998
- 986
-
A testing technique of streaker aerosol samplers via PIXEanalysisPrati, P. et al. | 1998
- 990
-
Traffic component of urban aerosols determined by PIXE methodWrobel, A. et al. | 1998
- 994
-
Chemical state analysis in air by high-resolutionPIXEMaeda, K. et al. | 1998
- 1000
-
Influence of the mining activity on sediments from the Odiel river (sw of Spain) analyzed byTTPIXEMartin, J.E. et al. | 1998
- 1005
-
Elemental composition in sediments and water in the Tranc~ao river basin. Apreliminary studyAraujo, F. et al. | 1998
- 1013
-
Analysis of Singapore marine sediments byPIXETang, S.M. et al. | 1998
- 1018
-
Analysis of chlorine in used oils by external beamPIXE-PIGEChoi, H.W. et al. | 1998
- 1023
-
Abundance and detection sensitivity in secondary-neutral mass spectrometry with electron-gas post-ionizationGnaser, H. et al. | 1998
- 1028
-
High spatial resolution 3D analysis of materials using gallium focused ion beam secondary ion mass spectrometry (FIB SIMS)Tomiyasu, Bunbunoshin et al. | 1998
- 1034
-
SIMSanalysis of epitaxial layers for power- and micro-electronicsSvensson, B.G. et al. | 1998
- 1040
-
RBS and SIMS study of the simultaneous phase growth of iridium silicides formed by RTA in vacuumAlmendra, A. et al. | 1998
- 1045
-
Oxide scale depth profiling of lanthanum-deposited AISI-304: An ion beam analysisAger, F.J. et al. | 1998
- 1052
-
Progress on the HVEE 14C isotope ratio mass spectrometer for biomedical applicationsMous, D.J.W. et al. | 1998
- 1057
-
Ion beam induced structural transformations in Si~mGe~n superlatticesSobolev, N. A. / Gerster, J. / Mauckner, G. / Wolpert, M. / Limmer, W. / Thonke, K. / Sauer, R. / Presting, H. / Koenig, U. et al. | 1998
- 1057
-
Ion beam induced structural transformations in SimGen superlatticesdSobolev, N.A. et al. | 1998
- 1062
-
Ion bombardment induced relaxation of strained AlGaAs-GaAs heterostructures studied by the complementary use of RBS-channeling and X-ray synchrotron radiationTuros, A. et al. | 1998
- 1068
-
High dose Heimplantation in two Tialloys: Effects on structure and thermal oxidationVickridge, I.C. et al. | 1998
- 1074
-
RBS study of galena thermal oxidation in air with a 6-MeV16O3+ ionbeamPonsot, B. et al. | 1998
- 1080
-
Observation of behavior of Ge d-doped layer in Si(001)Fuse, Takashi et al. | 1998
- 1080
-
Observation of behavior of Ge -doped layer in Si(001)Fuse, T. / Kawamoto, K. / Shiizaki, T. / Tazou, E. / Katayama, M. / Oura, K. et al. | 1998
- 1086
-
High depth resolution analysis of Cu-Si (111)"5x5" structure with medium energy ion scatteringYamashita, K. et al. | 1998
- 1092
-
Anomalous inelastic energy losses and trajectory effects at small angle ion scattering by single crystal surfaceDzhurakhalov, A.A. et al. | 1998
- 1097
-
Direct determination of the lattice site of H atoms on the (1x2) reconstructed Cu (110) surfaceMijiritskii, A.V. et al. | 1998
- 1102
-
CAICISS studies of atomic-hydrogen-induced structural changes of the Sbterminated SisurfacesRyu, Jeong-Tak et al. | 1998
- 1108
-
The orientational effects in low-energy ions scattering from monocrystalline surfacesSalimova, R.A. et al. | 1998
- 1112
-
Surface structure of hydrogen terminated (100)Si by mediumenergy ionscatteringTakai, M. et al. | 1998
- 1116
-
Small angle ion scattering by structures on the single crystal surface corresponding to initial stages of adsorptionUmarov, F.F. et al. | 1998
- 1121
-
Low-energy recoil scattering from hydrogen adsorbed on Ni(111)Umezawa, K. et al. | 1998
- 1125
-
MEIS surface structure determination methodology: Application to Ni(100)c(2x2)-ONoakes, T.C.Q. et al. | 1998
- 1131
-
Low energy ion scattering from the single crystal surface covered by adsorbed diatomic moleculesDzhurakhalov, A.A. et al. | 1998
- 1135
-
Crystallographic azimuthal-angle dependence of the neutral fraction of hydrogen emerging from GaAs(110)Imanishi, Nobutsugu et al. | 1998
- 1140
-
Energy resolution enhancement in ion beam experiments with Bayesian probability theoryFischer, R. et al. | 1998
- 1146
-
Bayesian techniques and the principle of maximum entropy in ion-beam analysis applicationsProzesky, V.M. et al. | 1998
- 1152
-
VRBS: Avirtual RBSsimulation tool for ion beam analysisStoquert, J.P. et al. | 1998
- 1157
-
The RBS datafurnace: Simulated annealingBarradas, N.P. et al. | 1998
- 1163
-
RBS-simulated annealing analysis of iron-cobalt silicidesBarradas, N.P. et al. | 1998
- 1168
-
RBS-Simulated annealing analysis of buried SiCOx layers formed by implantationofO into cubic silicon carbideBarradas, N.P. et al. | 1998
- 1172
-
Data acquisition and real-time computing by a DSP-based systemAiello, S. et al. | 1998
- 1177
-
Compact broad range magnetic spectrometer for use in ion beamanalysisLanford, W.A. et al. | 1998
- 1183
-
Ion beam analysis with monolayer depth resolutionCarstanjen, H.D. et al. | 1998
- 1191
-
Sub-monolayer phosphorus coverage measurements on CrCoTa-NiP hard disks usingPIXERodriguez-Fernández, L. et al. | 1998
- 1196
-
Some applications of high-resolution RBSandERD using a magnetic spectrometerKimura, Kenji et al. | 1998
- 1203
-
Dynamic in situ diagnostics using high-energy ion beam analysisMöller, W. et al. | 1998
- 1212
-
Probing of magnetic surfaces with inherent monolayer sensitivity by ion scatteringNärmann, A. et al. | 1998
- 1218
-
Evaluation of energy loss from DUAL-TOF spectraBergsmann, M. et al. | 1998
- 1223
-
Using heavy ion backscattering spectrometry(HIBS) to solve integrated circuit manufacturing problemsBanks, J.C. et al. | 1998
- 1229
-
Improved ion beam analysis facilities at the University of SurreyJeynes, C. et al. | 1998
- 1235
-
A fast beam deflection system for the application in a time of flight spectrometerPiel, N. et al. | 1998
- 1240
-
Detection of small lattice strains using beam rocking on a nuclear microprobede Kerckhove, D.G. et al. | 1998
- 1244
-
Ion-detectors for TOF mass analyzersGonin, M. et al. | 1998
- 1248
-
Ion channeling studies of GaN layers on c-oriented sapphireHolländer, B. et al. | 1998
- 1253
-
"Carbon!... and its analysis"Sellschop, F. / Connell, S. H. et al. | 1998
- 1253
-
"Carbon! hellip and its analysis"Sellschop, Friedel et al. | 1998
- 1259
-
Analysis and characterization of real catalysts using ion beam analysisStedile, F.C. et al. | 1998
- 1267
-
RBS-channeling analysis of virgin 6H-SiC: Experiments and Monte Carlo simulationsBianconi, M. et al. | 1998
- 1272
-
Ion beam analysis of 6HSiC implanted with erbium and ytterbiumionsKozanecki, A. et al. | 1998
- 1277
-
Analysis of hydrogen in technical layersEcker, K.H. et al. | 1998
- 1281
-
Analysis of deuterium induced nuclear reactions giving criteria for the formation process of expanded austeniteParascandola, S. et al. | 1998
- 1286
-
Radiation damage of YBa2Cu3O7 superconductorsVlastou, R. et al. | 1998
- 1291
-
Light impurities in HTCBiSrCaCuO superconductor filmsMatsunami, Noriaki et al. | 1998
- 1296
-
High temperature channeling analysis of YBa2Cu3O7-d single crystalsWang, F. et al. | 1998
- 1296
-
High temperature channeling analysis of YBa~2Cu~3O~7~-~ single crystalsWang, F. / Zama, H. / Ohtsuka, H. / Sato, M. / Koyama, S. / Ishida, Y. / Morishita, T. et al. | 1998
- 1300
-
Correlation between the Tl concentration depth profiles and the thallination time in Tl-Ba-Ca-Cu-O superconducting filmsCheang-Wong, J.C. et al. | 1998
- 1306
-
Depth resolution and dynamic range of 18O(p,a)15N depth profilingLiu, J.R. et al. | 1998
- 1306
-
Depth resolution and dynamic range of ^1^8O(p,)^1^5N depth profilingLiu, J. R. / Li, Y. P. / Chen, Q. Y. / Cui, X. T. / Christoffersen, R. / Jacobson, A. / Chu, W. K. et al. | 1998
- 1312
-
RBS and PIXEstudy of gallium depth profiling in ZSM-5 gallo-aluminosilicate zeolitesGabelica, Zelimir et al. | 1998
- 1322
-
A DLTS and RBS analysis of the angular dependence of defects introduced in Si during ion beam channelling using 435keV alpha-particlesDeenapanray, P.N.K. et al. | 1998
- 1327
-
IBIC study of charge collection properties in Si(Li) detectorsJaksic, M. et al. | 1998
- 1333
-
IBIC and IBILmicroscopy applied to advanced semiconductor materialsManfredotti, C. et al. | 1998
- 1340
-
A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency dataNipoti, R. et al. | 1998
- 1345
-
Fluence dependence of IBIC collection efficiency of CMOStransistorsOsipowicz, T. et al. | 1998
- 1349
-
The influence of ion induced damage on lateral charge collection andIBIC image contrastBreese, M.B.H. et al. | 1998
- 1355
-
A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysisBreese, M.B.H. et al. | 1998
- 1361
-
Trace elements and charge recombination in polycrystalline photovoltaic materialsWitham, L.C.G. et al. | 1998