Ion-implanted hydrogen in gallium nitride (English)
- New search for: Myers, S.M.
- New search for: Myers, S.M.
- New search for: Han, J.
- New search for: Headley, T.J.
- New search for: Hills, C.R.
- New search for: Petersen, G.A.
- New search for: Seager, C.H.
- New search for: Wampler, W.R.
In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
;
148
, 1
; 386-390
;
1999
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ISSN:
- Article (Journal) / Print
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Title:Ion-implanted hydrogen in gallium nitride
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Contributors:Myers, S.M. ( author ) / Han, J. / Headley, T.J. / Hills, C.R. / Petersen, G.A. / Seager, C.H. / Wampler, W.R.
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Published in:
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1999
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 535/3450
- New search for: 33.00
- Further information on Basic classification
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Keywords:
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Source:
Table of contents – Volume 148, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Low-energy cluster ion beam modification of surfacesYamada, Isao et al. | 1999
- 12
-
Plasma synthesis of hard materials with energetic ionsMonteiro, Othon R. et al. | 1999
- 17
-
Processing of powder surfaces by ion beam techniquesEnsinger, W. et al. | 1999
- 25
-
Comparison of beam-induced deposition using ion microprobePark, Y.K. et al. | 1999
- 32
-
Pulsed plasma beam mixing of Ti and Mo into Al2O3substratesPiekoszewski, J. et al. | 1999
- 37
-
Titanium nitride coating on implanted layer using titanium plasma based ion implantationSano, M. et al. | 1999
- 42
-
Low-energy focused Si ion beam deposition under oxygen atmosphereYanagisawa, J. et al. | 1999
- 47
-
Ionised cluster beams as a hardness measurement toolInsepov, Z. et al. | 1999
- 53
-
Factors determining energy values of ion beams for ion-beam depositionSakudo, N. et al. | 1999
- 58
-
Influence of beam parameters and low-energy electron neutralization on wafer charging during ion implantationCacciato, A. et al. | 1999
- 64
-
Modelling on plasma immersion implantation of trenchesKeller, G. et al. | 1999
- 69
-
Ion implantation into the interior surface of a steel tube by plasma source ion implantationBaba, K. et al. | 1999
- 74
-
Recoils, flows and explosions: surface damage mechanisms in metals and semiconductors during 50eV-50keVion bombardmentNordlund, K. et al. | 1999
- 83
-
Amorphization and recrystallization of covalent tetrahedralnetworksBolse, Wolfgang et al. | 1999
- 93
-
Self-organised wire growth using ion-implanted reservoirsBrongersma, S.H. et al. | 1999
- 98
-
Early stages of IBAD-film growth: Differences between (100) and polycrystalline Mo substratesvan der Linden, Jacqueline C. et al. | 1999
- 104
-
Can core-shell nanocrystals be formed by sequential ion implantation? Predictions from kinetic lattice Monte Carlo simulationsStrobel, M. et al. | 1999
- 110
-
Nano-indentation of ion-beam modified HfN-Si system: Identification of the amorphized inter-layerNowak, R. et al. | 1999
- 116
-
The effects of island diffusion and breakup in island growth during ion-beam assisted depositionRusanen, M. et al. | 1999
- 121
-
Surface modification with ionised cluster beams: ModellingInsepov, Z. et al. | 1999
- 126
-
Cratering in PMMAinduced by gold ions: dependence on the projectile velocityPapaléo, R.M. et al. | 1999
- 132
-
Effect of charge on ion-solid interaction at the surface of two-dimensional materialsTakeuchi, T. et al. | 1999
- 137
-
Ion-induced erosion of organic self-assembled monolayersCyganik, P. et al. | 1999
- 143
-
Low energy ion beam deposition with positive and negative ions-experiments to and modeling of subsurface growthEnders, B. et al. | 1999
- 149
-
Preparation of smooth Si(001) surfaces by glancing angle sputteringKimura, Kenji et al. | 1999
- 154
-
Crater formation on the surface of metals and alloys during high power ion beam processingShulov, V.A. et al. | 1999
- 159
-
Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formationKomarov, F.F. et al. | 1999
- 164
-
Electronic stopping power of <100> axial channeled 7Liions in SicrystalsDias, J.F. et al. | 1999
- 168
-
Charge equilibration process for channeled He ions along the Si<100> directionAzevedo, G.de M. et al. | 1999
- 172
-
Effects of crystal defects on the stopping powers for channeled ions in ion implanted single crystalsKotai, E. et al. | 1999
- 176
-
Atomic mixing induced by swift heavy ion irradiation of Fe-ZrmultilayersJaouen, C. et al. | 1999
- 184
-
Observation of atomic processes in Xe nanocrystals embedded in Al under 1MeV electron irradiationMitsuishi, K. et al. | 1999
- 189
-
Charge transfer induced critical deformation in ion beam amorphized metallic alloysOssi, P.M. et al. | 1999
- 194
-
Plastic flow produced by single ion impacts on metalsBirtcher, R.C. et al. | 1999
- 200
-
Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ionimplantationHolländer, B. et al. | 1999
- 206
-
Defects formed during 1MeV Si ion-irradiation of GeSi-Si strained-layer heterostructures at elevated temperaturesGlasko, J.M. et al. | 1999
- 211
-
Residual stresses and ion implantation effects in Cr thin filmsMisra, A. et al. | 1999
- 216
-
Internal stress reduction in diamond like carbon thin films by ion irradiationLee, D.H. et al. | 1999
- 221
-
Activation energy spectra for annealing of ion irradiation induced defects in silica glassesvan Dillen, T. et al. | 1999
- 227
-
Thermal annealing, irradiation, and stress in multilayersFayeulle, S. et al. | 1999
- 232
-
Post-deposition relaxation of internal stress in sputter-grown HfN thin films bombarded with carbon ionsNowak, R. et al. | 1999
- 238
-
Measurement of lateral stress in argon implanted thin gold films using quartz resonator techniquesWay, A.S. et al. | 1999
- 242
-
Dopant profile engineering of advanced SiMOSFET's using ion implantationStolk, P.A. et al. | 1999
- 247
-
Formation, evolution and annihilation of interstitial clusters in ion implantedSiLibertino, Sebania et al. | 1999
- 252
-
Very low energy nitrogen implantation for ultrathin silicon oxynitride film formationSalgado, T.D.M. et al. | 1999
- 257
-
Transient enhanced diffusion in preamorphized silicon: the role of thesurfaceCowern, N.E.B. et al. | 1999
- 262
-
A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in SiLa Magna, A. et al. | 1999
- 268
-
Structural changes in ultra-high-dose self-implanted crystalline and amorphous siliconZhu, Xianfang et al. | 1999
- 273
-
Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambientsGiles, L.F. et al. | 1999
- 279
-
Boron diffusion in Si and SiC during 2.5MeV proton irradiation at 500-850CKuznetsov, A. Y. / Janson, M. / Hallen, A. / Svensson, B. G. / Nylandsted Larsen, A. et al. | 1999
- 279
-
Boron diffusion in Si and SiC during 2.5MeV proton irradiation at 500-850(degree)CKuznetsov, A.Yu et al. | 1999
- 284
-
Amorphization of Si(001) by ultra low energy (0.5-5keV) ion implantation observed with high-resolutionRBSKimura, K. et al. | 1999
- 289
-
Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline siliconFedorov, A.V. et al. | 1999
- 294
-
Oxygen implanted silicon investigated by positron annihilation spectroscopyKruseman, A.C. et al. | 1999
- 300
-
Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasmaDeenapanray, P.N.K. et al. | 1999
- 306
-
Reverse annealing effects in heavy ion implanted siliconPellegrino, Paolo et al. | 1999
- 311
-
Microstructural evolution of oxygen implanted silicon during annealing processesIshimaru, M. et al. | 1999
- 317
-
Laser annealing of implanted silicon with temperature-controlled transparencyBayazitov, R.M. et al. | 1999
- 322
-
Simulation of metallic impurity gettering in silicon by MeVion implantationBrown, R.A. et al. | 1999
- 329
-
The effects of the annealing temperature on the formation of helium-filled structures in siliconFichtner, P.F.P. et al. | 1999
- 334
-
Distribution of gettering centres at a buried amorphous layer insiliconKögler, R. et al. | 1999
- 340
-
Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopyKnights, A.P. et al. | 1999
- 345
-
Electron beam induced regrowth of ion implantation damage inSi andGeJencic, I. et al. | 1999
- 350
-
The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layersMcCallum, J.C. et al. | 1999
- 355
-
Mechanical properties of bismuth implanted amorphous GefilmJuhász, A. et al. | 1999
- 360
-
Edge supported amorphous silicon membranes for diffraction studiesRoorda, Sjoerd et al. | 1999
- 366
-
Low temperature relaxation in amorphous silicon made by ionimplantationRoorda, Sjoerd et al. | 1999
- 370
-
Activation energies for light ions in ion beam induced epitaxial crystallizationKinomura, A. et al. | 1999
- 375
-
MDsimulations of ion beam induced epitaxial crystallization at a-Si-c-Si interfaces: interface structure and elementary processes of crystallizationWeber, B. et al. | 1999
- 381
-
Ion implantation induced selective area exfoliation of InP andGaAsSimpson, T.W. et al. | 1999
- 386
-
Ion-implanted hydrogen in gallium nitrideMyers, S.M. et al. | 1999
- 391
-
Atomic-level characterisation of ion-induced amorphisation in compound semiconductorsRidgway, M.C. et al. | 1999
- 396
-
Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitrideLiu, C. et al. | 1999
- 401
-
Low temperature transformations of defects in GaAs and AlGaAsTuros, A. et al. | 1999
- 406
-
Low-energy ion assisted deposition of epitaxial gallium nitridefilmsGerlach, J.W. et al. | 1999
- 411
-
Semi-insulating behaviour in FeMeV implanted n-typeInPGasparotto, A. et al. | 1999
- 416
-
Ion-implantation in SiC and GaNPapanicolaou, N. et al. | 1999
- 421
-
Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAsNarsale, A.M. et al. | 1999
- 426
-
Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous-crystalline interfacesGlaser, E. et al. | 1999
- 432
-
Characterization of GaN synthesized in N-ion implanted GaAsKuriyama, K. et al. | 1999
- 437
-
Electrical characterization of low temperature He-ion irradiatedGaNHayes, M. et al. | 1999
- 441
-
Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-typeGaAsLegodi, M.J. et al. | 1999
- 446
-
Proton irradiation of n-type GaAsGoodman, S.A. et al. | 1999
- 450
-
Physical sputtering of III-V-semiconductors with a focused Ga+-beamMenzel, R. et al. | 1999
- 454
-
Characterization of Mg+-implanted InP by Raman spectroscopyIbáñez, J. et al. | 1999
- 459
-
Acceptor profile control in GaAs using co-implantation of ZnandPHutchinson, S. et al. | 1999
- 463
-
RBSandERDA study of ion beam synthesised amorphous galliumnitrideBarradas, N.P. et al. | 1999
- 468
-
In situ RBSinvestigation of damage production during ion implantation in AlxGa1-xAs at20KBreeger, B. et al. | 1999
- 474
-
Emission kinetics of electron traps introduced in n-GaN during He-ion irradiationAuret, F.D. et al. | 1999
- 478
-
Bulk unipolar diodes formed in GaAs by ion implantationHutchinson, S. et al. | 1999
- 481
-
Luminescence from Er and Tb implanted into MOS tunnel diodesWang, S. et al. | 1999
- 486
-
Energy transfer efficiency of the 1.54m luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantationKimura, T. / Nakanose, T. / Wang, W. / Isshiki, H. / Saito, R. et al. | 1999
- 486
-
Energy transfer efficiency of the 1.54mm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantationKimura, T. et al. | 1999
- 492
-
Lattice sites and damage annealing of Er in low-dose implantedGaAsWahl, U. et al. | 1999
- 497
-
Optical and electrical doping of silicon with holmiumSuyver, J.F. et al. | 1999
- 502
-
Er-related emission in nitrogen co-implanted AlXGa1-XAs:Er (X=0.15,0.37,0.70)Uekusa, S. et al. | 1999
- 507
-
Luminescence properties of Er implanted p-type and n-type3CSiC-SiAwahara, K. et al. | 1999
- 512
-
The influence of implantation and annealing conditions on optical activity of Er3+ions in 6HSiCKozanecki, A. et al. | 1999
- 517
-
Boundary conditions for formation of Er-O optical centers in Er- and O-coimplantedSiNakashima, Kenshiro et al. | 1999
- 523
-
Deep level properties of erbium implanted epitaxially grown SiGeMamor, M. et al. | 1999
- 528
-
Mechanisms in the ion beam synthesis of SiC layers in siliconLindner, J.K.N. et al. | 1999
- 534
-
The role of Fe on the crystallisation of a-Si3N4 from amorphous Si-N formed by ion implantationLi, Z.L. et al. | 1999
- 534
-
The role of Fe on the crystallisation of -Si~3N~4 from amorphous Si-N formed by ion implantationLi, Z. L. / Wong-Leung, J. / Deenapanray, P. N. K. / Conway, M. / Chivers, D. J. / Fitz Gerald, J. D. / Williams, J. S. et al. | 1999
- 540
-
Formation of crystalline SiC films by CH4 plasma immersion ion implantation intoSiVolz, K. et al. | 1999
- 545
-
Ion beam processing of SiC for optical applicationWesch, W. et al. | 1999
- 551
-
Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVAionsourceLindner, J.K.N. et al. | 1999
- 557
-
Displacement energy measurements for ion-irradiated 6H-SiCJiang, W. et al. | 1999
- 562
-
Damage formation and recovery in C+-irradiated 6H-SiCJiang, W. et al. | 1999
- 567
-
Preservation of polytypic structure in implanted4H-SiC(1100)Satoh, M. et al. | 1999
- 573
-
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiCLulli, G. et al. | 1999
- 578
-
Luminescence quenching in 150keV proton irradiated a-SiC:HReitano, R. et al. | 1999
- 583
-
Ion beam irradiation of relaxed amorphous silicon carbideCalcagno, L. et al. | 1999
- 589
-
Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into siliconChen, Dihu et al. | 1999
- 594
-
Effects of ion beam irradiation on the crystallization of Si-C filmsHishita, Shunichi et al. | 1999
- 599
-
Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted depositionShima, Yukari et al. | 1999
- 604
-
Ion beam synthesized cobalt germanide alloy by metal vapor vacuum arc implantationLee, C.S. et al. | 1999
- 610
-
Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurementsHausmann, Stephan et al. | 1999
- 615
-
High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivityGao, K.Y. et al. | 1999
- 621
-
Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesisHogg, S.M. et al. | 1999
- 626
-
The nature of damage in ion-implanted and annealed diamondKalish, R. et al. | 1999
- 634
-
The effect of fluence on the hardening of C60films irradiated with HeandNionsFoerster, C.E. et al. | 1999
- 639
-
Surface treatment of diamond films with Ar and O2 cluster ion beamsToyoda, N. et al. | 1999
- 645
-
Effect of Ar+, N2+, He+ and H2+ bombardment on the composition and structure of CNxlayersBertoti, I. et al. | 1999
- 650
-
CNmolecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the filmsTsuji, H. et al. | 1999
- 655
-
Preparation of hydrophobic diamond like carbon films by plasma source ion implantationHatada, R. et al. | 1999
- 659
-
Tribological properties of nitrogen implanted diamond-like carbonMiyagawa, S. et al. | 1999
- 664
-
Evaluation of raw hardness of DLCthin films prepared byIBADFunada, Y. et al. | 1999
- 669
-
The investigation of optical and electrical properties of N+-implanted amorphous diamond-like carbon (DLC)filmsFaizrakhmanov, I.A. et al. | 1999
- 673
-
Growth of carbon thin film by low-energy mass-selected ion beam depositionOhno, H. et al. | 1999
- 678
-
Improvement of the photorefractive response of Fe-doped KNbO3 crystals by MeV proton irradiationFluck, D. et al. | 1999
- 683
-
Temperature dependence of ion-beam induced amorphization in -quartzDhar, S. / Bolse, W. / Lieb, K.-P. et al. | 1999
- 683
-
Temperature dependence of ion-beam induced amorphization in a-quartzDhar, Sankar et al. | 1999
- 687
-
Effect of proton implantation on the photosensitivity of SMF-28 opticalfiberTchebotareva, A.L. et al. | 1999
- 692
-
Network modification and epitaxial recrystallisation of ion-implanted -quartzRoccaforte, F. / Bolse, W. / Lieb, K. P. et al. | 1999
- 692
-
Network modification and epitaxial recrystallisation of ion-implanted a-quartzRoccaforte, F. et al. | 1999
- 698
-
Optical rotation in a Bi4Ge3O12:RE surface modified by He-ion beam implantationJazmati, A.K. et al. | 1999
- 704
-
Ion irradiation-induced phase transformation of pyrochlore and zirconoliteWang, S.X. et al. | 1999
- 710
-
He+implantation for waveguide fabrication in KTPandRb:KTPOpfermann, Th et al. | 1999
- 715
-
Modification of ALE-grown SrS thin films by ion implantation of Cu andcodopantsSajavaara, T. et al. | 1999
- 720
-
Damage evolution in TiC crystals during hydrogen and helium dual-ion beam irradiationHojou, K. et al. | 1999
- 726
-
Synthesis of Ti:sapphire by ion implantationMcCallum, J.C. et al. | 1999
- 730
-
Effect of crystal orientation on damage accumulation and post-implantation annealing for iron implantation into sapphireMcHargue, Carl J. et al. | 1999
- 735
-
Mechanical property changes of amorphous alumina induced by ion implantationIkeyama, M. et al. | 1999
- 740
-
Ceramic surface modification by a keVion irradiationChoi, W.K. et al. | 1999
- 745
-
Damage accumulation in Al2O3 during H2+or He+ ion irradiationSasajima, N. et al. | 1999
- 752
-
Oxidation state and lattice site occupation of ions implanted into rutileMeyer, O. et al. | 1999
- 758
-
Ion-beam modification of TiO2film to multilayered photocatalystSumita, T. et al. | 1999
- 762
-
Tin implanted in rutile single crystals: disorder, lattice location and the influence of the analyzing He-beamKhubeis, I. et al. | 1999
- 768
-
The formation of microvoids in MgO by helium ion implantation and thermal annealingvan Veen, A. et al. | 1999
- 773
-
Thermal fatigue of ion implanted magnesium oxide crystalsGurarie, V.N. et al. | 1999
- 778
-
Ion beam mixing of the ZrO2-Fe systemTuros, A. et al. | 1999
- 783
-
Retention of iodine in yttria stabilized zirconiaPouchon, M.A. et al. | 1999
- 787
-
Optical absorption and thermoluminescence of MgAl2O4 spinel crystals implanted with Xe++ionsAfanasyev-Charkin, I.V. et al. | 1999
- 793
-
Textured CeO2 buffer layers on amorphous substrates by ion beam assisted depositionHuang, M.Q. et al. | 1999
- 798
-
Channeling ion beam induced crystalline quality improvement of epitaxial CeO2filmsYamamoto, Y. et al. | 1999
- 803
-
YBa2Cu3O7-d Josephson junctions fabricated by oxygen implantationKahlmann, F. et al. | 1999
- 803
-
YBa~2Cu~3O~7~-~ Josephson junctions fabricated by oxygen implantationKahlmann, F. / Engelhardt, A. / Schubert, J. / Zander, W. / Buchal, C. / Hollkott, J. et al. | 1999
- 807
-
Stability and diffusion of Hg implanted YBa2Cu3O6+xAraujo, J.P. et al. | 1999
- 813
-
Characterization and giant magnetoresistance effect in cobalt-silver granular films formed by MEVVAimplantationWong, S.P. et al. | 1999
- 819
-
Study of the influence of surface carbon on the tribological properties of ion-treated steelsBenyagoub, Abdenacer et al. | 1999
- 824
-
Effects of high energy nitrogen implantation on stainless steelmicrostructurePelletier, H. et al. | 1999
- 830
-
N-ion implantation assisted by preparative and closing implantation for surface modification of tool steelVilaithong, T. et al. | 1999
- 836
-
The Fe-N system: phase transformations induced by the concomitant use of heavy ion bombardment and temperatureMoreira, E.C. et al. | 1999
- 841
-
CEMS-investigations of AISIM2 steel after nitrogen plasma immersion ion implantationUglov, V.V. et al. | 1999
- 846
-
Nitrogen plasma immersion ion implantation into high speed steelMändl, S. et al. | 1999
- 851
-
Phase formation in titanium after high-fluence oxygen ionimplantationHammerl, C. et al. | 1999
- 858
-
Improvement of the high temperature oxidation resistance of Ti50Al via ion-implantationHornauer, U. et al. | 1999
- 863
-
Behavior of implanted nitrogen in Zr-carbon bilayerMiyagawa, Y. et al. | 1999
- 868
-
Enhancement of oxidation resistance in Cu and Cu(Al) thin layersHorváth, Z.E. et al. | 1999
- 872
-
Ion beam induced magnetic nanostructure patterningBernas, H. et al. | 1999
- 880
-
Linkage between crystallographic texture and surface roughness in niobium films synthesized by ion beam assisted depositionJi, H. et al. | 1999
- 886
-
Structural analysis of Si-Fe and Mo-Fe ion-beam mixed layersJagielski, J. et al. | 1999
- 891
-
Defect clusters in high-energy ion-irradiated Ni and dilute Ni alloys investigated by diffuse X-ray scatteringYuya, Hideki et al. | 1999
- 896
-
Low temperature ion bombardment of Bi30Pd70-films- influence of the initial structure on the phase formationDurner, R. et al. | 1999
- 901
-
Amorphization of metal films by low temperature ion irradiation. Aninsitu PAC-study for AuIn2 and In3PdfilmsPlewnia, A. et al. | 1999
- 907
-
Deposition of magnetic thin films byIBADSikola, T. et al. | 1999
- 912
-
An advanced apparatus for ion beam assisted sputter coating of the inner walls of tubesKraus, T. et al. | 1999
- 917
-
Optimisation of TiN-IBAD coatings for wear reduction and corrosion protectionVera, E. et al. | 1999
- 925
-
Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devicesGotoh, Y. et al. | 1999
- 930
-
Diffusion processes in metal-ceramic interfaces under heavy ion irradiationNagel, R. et al. | 1999
- 936
-
New magnetic properties by ion beam mixing: Ag-Fe-Ag-(001)-films with tetragonal symmetryKurowski, D. et al. | 1999
- 941
-
Study of micromechanical properties of ion-beam mixed layersJagielski, J. et al. | 1999
- 946
-
Sequential disordering during ion-induced amorphization in the Mo-Fe multilayered filmsLin, C. et al. | 1999
- 951
-
Effects of Ne- and Ar-ion irradiations on Ni-SiO2 bilayersLieb, K.-P. et al. | 1999
- 957
-
Microstructure of sulfide nanocrystals formed by ion-implantationMeldrum, A. et al. | 1999
- 964
-
Nonlinear optical properties of semiconducting nanocrystals in fused silicaDowd, A. et al. | 1999
- 969
-
Precipitation, ripening and chemical effects during annealing of Ge+implanted SiO2layersHeinig, K.H. et al. | 1999
- 975
-
Ion beam effects on the formation of Ge and Si nanoclusters in silica thin filmsCarosella, C.A. et al. | 1999
- 980
-
Light emission from ion beam induced silicon nanoclusters in silicon dioxide: role of cluster-cluster interactions via a thin oxideShimizu-Iwayama, Tsutomu et al. | 1999
- 986
-
The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2Cheylan, S. et al. | 1999
- 991
-
Formation of CdS and CdSe nanocrystals by sequential implantationWhite, C.W. et al. | 1999
- 997
-
Blue electroluminescence from high dose Si+ implantation in SiO2Muller, D. et al. | 1999
- 1002
-
Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogenionsZhao, J. et al. | 1999
- 1007
-
Nanocluster formation in silicate glasses by sequential ion implantation proceduresCattaruzza, E. et al. | 1999
- 1012
-
Post-implantation bombardment assisted formation of colloidal AuinsilicaIla, D. et al. | 1999
- 1017
-
Self-assembled two-dimensional distribution of nanoparticles with high-current Cu-implantation into insulatorsKishimoto, N. et al. | 1999
- 1023
-
Synthesis of metal-polymer composite films by implantation of Fe and Agions in viscous and solid state silicone substratesKhaibullin, R.I. et al. | 1999
- 1029
-
Linear and nonlinear optical properties of Cu nanoparticles fabricated by high-current Cu- implantation in silica glassTakeda, Y. et al. | 1999
- 1034
-
Nanosized lead inclusions in silicon produced by ion implantationJohnson, E. et al. | 1999
- 1039
-
Structural and magnetic properties of Fe ion implantedAl2O3Sakamoto, I. et al. | 1999
- 1044
-
Optical and structural properties of chromium implanted lithium niobate-cluster formation and substitutional incorporationKling, A. et al. | 1999
- 1049
-
Formation of coherent precipitates of platinum in sapphireAlves, E. et al. | 1999
- 1054
-
Dependence of optical properties of implanted silver nanoparticles in float glass on substrate temperatureHole, D.E. et al. | 1999
- 1059
-
Properties of metallic ions implanted into sapphireKobayashi, Tomohiro et al. | 1999
- 1064
-
Ion beam synthesis of Au and Cu nanoclusters in MgOZimmerman, R.L. et al. | 1999
- 1069
-
New techniques for optical absorption measurement of implanted nanoparticles in float glassOkur, I. et al. | 1999
- 1074
-
Characterization of silver colloids formed in LiBbO3 by AgandO implantation at room and elevated temperaturesWilliams, E.K. et al. | 1999
- 1079
-
Cell adhesion on low-energy ion beam-irradiated polysiloxane surfacesSatriano, C. et al. | 1999
- 1085
-
Micromachining using focused high energy ion beams: Deep Ion Beam Lithographyvan Kan, L.A. et al. | 1999
- 1090
-
Metal ion implantation and dynamic ion mixing for the protection of high-performance polymers from severe oxidative environmentIskanderova, Z.A. et al. | 1999
- 1097
-
Modification of alkanethiol self-assembled monolayers on Au by single-ion irradiationOgiso, H. et al. | 1999
- 1102
-
Carbon nanotubes produced by high energy(E>100MeV), heavy ion irradiation of graphiteBiro, L.P. et al. | 1999
- 1106
-
Structure evolution of implanted polymers: Buried conductive layer formationPopok, V.N. et al. | 1999
- 1111
-
Thermal stability of He irradiated photoresist filmsGarcia, Irene T.S. et al. | 1999
- 1116
-
Paramagnetic defects in modified carbon-containing semiconductorsAzarko, I.I. et al. | 1999
- 1121
-
Effects of H-implantation energy on the optical stability of implanted urushi films under photo-irradiationAwazu, K. et al. | 1999
- 1126
-
High fluence boron implantation into polyimideVacik, J. et al. | 1999
- 1131
-
Surface modification of polyethylene by low keV ion beamsToth, A. et al. | 1999
- 1136
-
Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment propertiesTsuji, H. et al. | 1999
- 1141
-
Ion beam modification of PES, PS and PVC polymersEvelyn, A.L. et al. | 1999