Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy (English)
- New search for: Grün, M.
- New search for: Grün, M.
- New search for: Storzum, A.
- New search for: Hetterich, M.
- New search for: Kamilli, A.
- New search for: Send, W.
- New search for: Walter, Th
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In:
Journal of crystal growth
;
201
, 1
; 457-460
;
1999
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ISSN:
- Article (Journal) / Print
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Title:Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy
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Contributors:Grün, M. ( author ) / Storzum, A. / Hetterich, M. / Kamilli, A. / Send, W. / Walter, Th / Klingshirn, C.
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Published in:Journal of crystal growth ; 201, 1 ; 457-460
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:1999
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ISSN:
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ZDBID:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Classification:
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Source:
Table of contents – Volume 201, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
How molecular beam epitaxy (MBE) began and its projection into the futureCho, A.Y. et al. | 1999
- 8
-
Gas source molecular beam epitaxy as a multi-wafer epitaxial production technologyIzumi, Shigekazu et al. | 1999
- 12
-
Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type dopingSazio, P.J.A. et al. | 1999
- 17
-
Noise, drift, and calibration in optical flux monitoring for MBEJackson, Andrew W. et al. | 1999
- 22
-
In situ compositional control of advanced HgCdTe-based IR detectorseAlmeida, L.A. et al. | 1999
- 26
-
In situ real time monitoring of thickness and composition in MBE using alpha particle energy lossBeaudoin, M. et al. | 1999
- 31
-
Real-time control of the MBE growth of InGaAs on InPRoth, J.A. et al. | 1999
- 36
-
Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InPBiermann, K. et al. | 1999
- 40
-
Feedback control of substrate temperature during the growth of near-lattice-matched InGaAs on InP using diffuse reflection spectroscopyJohnson, S.R. et al. | 1999
- 45
-
Imaging energy analyzer for RHEED: energy filtered diffraction patterns and in situ electron energy loss spectroscopyStaib, P. et al. | 1999
- 50
-
Phase-locked substrate rotation: new applications for RHEED in MBE growthBraun, W. et al. | 1999
- 56
-
Island nucleation and growth during homoepitaxy on GaAs(0 0 1)-(2x4)Vvedensky, D.D. et al. | 1999
- 62
-
Mechanism of self-limiting epitaxial growth on nonplanar substratesBiasiol, G. et al. | 1999
- 67
-
Modelling of compound semiconductor epitaxyHeyn, Ch et al. | 1999
- 73
-
First-principles investigation of Ga adatom migration on a GaAs(1 1 1)A surfaceTaguchi, Akihito et al. | 1999
- 77
-
Theory of adsorption and diffusion of Si adatoms on H-Si(1 0 0) stepped surfaceNara, Jun et al. | 1999
- 81
-
Surface segregation behavior of Ge in comparison with B, Ga, and Sb: calculations using a first-principles methodUshio, Jiro et al. | 1999
- 85
-
Evaporation and step edge diffusion in MBESchinzer, S. et al. | 1999
- 88
-
Activation energy for Ga diffusion on the GaAs(0 0 1)-(2x4) surface: an MBE-STM studyYang, H. et al. | 1999
- 93
-
Smoothing kinetics of CdTe(0 0 1)-surfaces: indication for a step-terrace exchange barrierNeureiter, H. et al. | 1999
- 97
-
Elastic interaction between defects on a surfacePeyla, P. et al. | 1999
- 101
-
Self-organized vicinal surfaces: a template for the growth of nanostructuresMartrou, D. et al. | 1999
- 106
-
In situ studies of III-V semiconductor film growth by molecular beam epitaxyJoyce, B.A. et al. | 1999
- 113
-
In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III-V compoundsSilveira, J.P. et al. | 1999
- 118
-
Atomic-level in situ real-space observation of Ga adatoms on GaAs(0 0 1)(2x4)-As surface during molecular beam epitaxy growthTsukamoto, Shiro et al. | 1999
- 124
-
SEM imaging of fundamental growth processes during MBE of GaAs on (1 1 1)A substratesYamaguchi, Hiroshi et al. | 1999
- 128
-
In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopyTaferner, W.T. et al. | 1999
- 132
-
In situ reflectance difference spectroscopy: nitrogen-plasma doping of MBE grown ZnTe layersStifter, D. et al. | 1999
- 137
-
Surface characterization of III-V heteroepitaxial systems by laser light scatteringGonzález, M.U. et al. | 1999
- 141
-
Asymmetric behavior of monolayer holes after growth in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopyTanahashi, K. et al. | 1999
- 146
-
MBE growth and in situ electrical characterization of metal-semiconductor structuresChen, L.C. et al. | 1999
- 150
-
Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxyHorikoshi, Yoshiji et al. | 1999
- 159
-
Very high quality 2DEGS formed without dopant in GaAs-AlGaAs heterostructuresHarrell, R.H. et al. | 1999
- 163
-
An optimized digital alloy growth technique for accurate band gap engineeringGeisselbrecht, W. et al. | 1999
- 166
-
Surface structure transitions on (0 0 1) GaAs during MBEPreobrazhenskii, V.V. et al. | 1999
- 170
-
Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAsPreobrazhenskii, V.V. et al. | 1999
- 174
-
Arsenic-free high-temperature surface cleaning of molecular beam epitxy (MBE)-grown AlGaAs layer with new passivation structureIizuka, Kanji et al. | 1999
- 178
-
Growth and structural characteristics of (Ga,Al)As Bragg reflectors grown by MBE on nominal and vicinal (1 1 1)B GaAs substratesGuerret-Piécourt, Christelle et al. | 1999
- 183
-
Arsenic induced mass transport of GaAs on V-groove GaAs substrateMartin, D. et al. | 1999
- 187
-
MBE growth of antiphase GaAs films using GaAs-Ge-GaAs heteroepitaxyEbert, Christopher B. et al. | 1999
- 194
-
Growth of Ge layers with high hole mobility on surface controlled AlAs by molecular beam epitaxyMaeda, Takeshi et al. | 1999
- 198
-
Re-entrant behaviour in GaAs(1 1 1)A homoepitaxySteans, P.H. et al. | 1999
- 202
-
Heterojunction and interface space charge effects on interstitial Be diffusion during molecular beam epitaxy (MBE) growthPao, Yi-Ching et al. | 1999
- 206
-
Electronic lifetime engineering using low-temperature GaAs in a quantum well structureStellmacher, M. et al. | 1999
- 212
-
Behavior of arsenic precipitation in low-temperature grown III-V arsenidesChang, M.N. et al. | 1999
- 217
-
Properties of C-doped LT-GaAs grown by MBE using CBr4Liu, W.K. et al. | 1999
- 221
-
Superior molecular beam epitaxy (MBE) growth on (N 1 1)A GaAsShtrikman, Hadas et al. | 1999
- 226
-
MBE growth of AlGaAs-GaAs heterostructure and silicon doping on GaAs(n 1 1)A (n=1-4) substratesOhachi, T. et al. | 1999
- 232
-
Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)Gutakovsky, A.K. et al. | 1999
- 236
-
Van der Waals epitaxy for highly lattice-mismatched systemsKoma, Atsushi et al. | 1999
- 242
-
Growth of InAsP-InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: substrate temperature and arsenic species effectsDagnall, G. et al. | 1999
- 248
-
Material properties of InAlAs layers grown by MBE on vicinal (1 1 1)B InP substratesGeorgakilas, A. et al. | 1999
- 252
-
Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatchLacombe, D. et al. | 1999
- 256
-
First-principles calculations on atomic and electronic structures of misfit dislocations in InAs-GaAs(1 1 0) and GaAs-InAs(1 1 0) heteroepitaxiesOyama, Norihisa et al. | 1999
- 260
-
Ordered arrays of arsenic clusters coincided with InAs-GaAs superlattices grown by low-temperature MBEChaldyshev, V.V. et al. | 1999
- 263
-
InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsCordier, Y. et al. | 1999
- 267
-
Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAsKrispin, P. et al. | 1999
- 271
-
Annealing effects on lattice-strain-relaxed In0.5Al0.5As-In0.5Ga0.5As heterostructures grown on GaAs substratesMishima, T. et al. | 1999
- 276
-
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As-GaAs heterostructuresPolimeni, A. et al. | 1999
- 280
-
A gas-source MBE growth study of strained Ga1-xInxP layers on GaAsSchuler, O. et al. | 1999
- 284
-
Indium surface segregation in strained GaInAs quantum wells grown on (1 1 1) GaAs substrates by MBEMarcadet, X. et al. | 1999
- 290
-
InGaN-based blue light-emitting diodes and laser diodesNakamura, Shuji et al. | 1999
- 296
-
Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy Doping, optical, and electrical propertiesCalleja, E. et al. | 1999
- 318
-
Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodesMayer, M. et al. | 1999
- 323
-
GaN-GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3Grandjean, N. et al. | 1999
- 327
-
MBE grown AlGaN-GaN MODFETs with high breakdown voltageVescan, A. et al. | 1999
- 332
-
Layered compound substrates for GaN growthYamada, Akiyoshi et al. | 1999
- 336
-
A new initial growth method for pure cubic GaN on GaAs(0 0 1)Chen, Hong et al. | 1999
- 341
-
Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBEKoizumi, T. et al. | 1999
- 346
-
Plasma-assisted MBE growth of GaN and InGaN on different substratesMamutin, V.V. et al. | 1999
- 351
-
Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-sourceKitatani, T. et al. | 1999
- 355
-
Strain effect on the N composition dependence of GaNAs bandgap energy grown on (0 0 1) GaAs by metalorganic molecular beam epitaxyUesugi, K. et al. | 1999
- 359
-
Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxySchenk, H.P.D. et al. | 1999
- 365
-
Spatially resolved photoluminescence of laterally overgrown GaNGibart, P. et al. | 1999
- 371
-
Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBEAsahi, H. et al. | 1999
- 376
-
Defect related persistent effects in MBE grown gallium nitride epilayersReddy, C.V. et al. | 1999
- 382
-
Real-time control of the molecular beam epitaxy of nitridesMassies, J. et al. | 1999
- 388
-
RHEED studies of the GaN surface during growth by molecular beam epitaxyHughes, O.H. et al. | 1999
- 392
-
Suppression of hexagonal GaN mixing by As4 molecular beam in cubic GaN growth on GaAs (0 0 1) substratesHashimoto, Akihiro et al. | 1999
- 396
-
Growth of cubic InN on InAs(0 0 1) by plasma-assisted molecular beam epitaxyLima, A.P. et al. | 1999
- 399
-
Characterisation of an RF atomic nitrogen plasma sourceVoulot, D. et al. | 1999
- 402
-
Enhancement of surface decomposition using supersonic beam: direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxyShen, X.Q. et al. | 1999
- 407
-
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0 0 0 1) by plasma-assisted MBETrampert, A. et al. | 1999
- 411
-
MBE of AlN on SiC and influence of structural substrate defects on epitaxial growthEbling, D.G. et al. | 1999
- 415
-
MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: doping effectsSánchez-Garcia, M.A. et al. | 1999
- 419
-
Effects of rapid thermal annealing on GaInNAs-GaAs multiple quantum wellsXin, H.P. et al. | 1999
- 423
-
Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN filmsVennéguès, P. et al. | 1999
- 429
-
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surfaceZhang, Jian-Ping et al. | 1999
- 433
-
Buffer layers for the growth of GaN on sapphire by molecular beam epitaxyEbel, R. et al. | 1999
- 437
-
Growth evolution of cubic-GaN on sapphire (0 0 0 1) substrate by metalorganic molecular beam epitaxySuda, Jun et al. | 1999
- 441
-
AlN on sapphire and on SiC: CL and Raman studyKornitzer, K. et al. | 1999
- 444
-
Epitaxial growth of GaN-Pd-GaN sandwich structureTanaka, Uitsu et al. | 1999
- 448
-
Growth of ZnSe-(Zn,Mg)(S,Se) superlattices by molecular beam epitaxyKorn, M. et al. | 1999
- 453
-
Molecular beam epitaxy of CdS-ZnSe heterostructuresPetillon, S. et al. | 1999
- 457
-
Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxyGrün, M. et al. | 1999
- 461
-
Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSeSorokin, S. et al. | 1999
- 465
-
CdTe epitaxial layers in ZnSe-based heterostructuresRubini, S. et al. | 1999
- 470
-
SIMS study of Al thermal diffusion in MBE-grown sandwiched-ZnSTe structuresMa, Z.H. et al. | 1999
- 474
-
Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surfaceKobayashi, M. et al. | 1999
- 477
-
Up-conversion effect of ZnSe-ZnTe superlattices with modulated periodicityWatanabe, K. et al. | 1999
- 481
-
Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructuresSolov'ev, V.A. et al. | 1999
- 486
-
Formation of the charge balanced ZnSe-GaAs(1 1 0) interfaces by molecular beam epitaxyMaehashi, Kenzo et al. | 1999
- 490
-
Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)Ohtake, Akihiro et al. | 1999
- 494
-
Molecular-beam epitaxy of BeTe layers on GaAs substratesTournié, E. et al. | 1999
- 498
-
Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe-ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayerBousquet, V. et al. | 1999
- 502
-
Growth of ZnSe layers on b(2x4)As, (ix3)Te, and (4x2)Ga-terminated (0 0 1)GaAs substratesCarbonell, L. et al. | 1999
- 506
-
Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe-ZnTe strained-layer superlattices buffer layerTu, R.C. et al. | 1999
- 510
-
Strain relaxation of ZnCdSe quantum wells grown on (2 1 1)B GaAs measured using the piezoelectric effectMilnes, J.S. et al. | 1999
- 514
-
Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(0 0 1) substratesChauvet, C. et al. | 1999
- 518
-
Two-dimensional growth mode promotion of ZnSe on Si(1 1 1) by using a nitrogen substrate surface treatmentMéndez-Garcia, V.H. et al. | 1999
- 524
-
Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTeHe, L. et al. | 1999
- 530
-
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffersPeng, C.S. et al. | 1999
- 534
-
Optical Er-doping of Si during sublimational molecular beam epitaxyAndreev, B.A. et al. | 1999
- 538
-
Surfactant-mediated growth of Ge-Si(0 0 1) studied by Raman spectroscopy and TEMBrill, G. et al. | 1999
- 542
-
Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(0 0 1): a RHEED studyDentel, D. et al. | 1999
- 547
-
Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layersGallas, B. et al. | 1999
- 551
-
Influence of crystal perfection on the reverse leakage current of the SiGe-Si p-n heterojunction diodesLiu, X.F. et al. | 1999
- 556
-
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(1 0 0) during high-temperature annealingLiu, J.P. et al. | 1999
- 560
-
Ge concentration dependence of Sb surface segregation during SiGe MBENakagawa, Kiyokazu et al. | 1999
- 564
-
The effects of carbonized buffer layer on the growth of SiC on SiWang, Y.S. et al. | 1999
- 568
-
Atomic layer in situ etching and MBE regrowthEberl, K. et al. | 1999
- 574
-
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structuresHilburger, U. et al. | 1999
- 578
-
Patterned substrate overgrowth for optoelectronic device integration using chemical beam epitaxy (CBE)Poole, P.J. et al. | 1999
- 582
-
Minimizing interface contamination in MBE overgrowthHey, R. et al. | 1999
- 586
-
Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivationHeinlein, Christian et al. | 1999
- 590
-
Selective growth on facets and in situ mask removal for regrowthShiralagi, Kumar et al. | 1999
- 594
-
In situ cleaning of air-exposed InGaAs using trisdimethylaminoarsine for CBE regrowth aimed at optical devicesSugiura, H. et al. | 1999
- 599
-
In situ lateral structuring during II-VI MBE growth with Al50Ga50As-GaAs shadow masksSchumacher, C. et al. | 1999
- 604
-
Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on siliconFinnie, Paul et al. | 1999
- 610
-
Maskless selective epitaxy of InxGa1-xAs using low-energy In0.15Ga0.85-FIB and As4 molecular beamCho, D.H. et al. | 1999
- 614
-
Kinetics of AsCl3 chemical beam etching of GaAs(0 0 1), (1 1 1)A and (1 1 1)B surfacesGuyaux, J.L. et al. | 1999
- 619
-
Self-organized MBE growth of II-VI epilayers on patterned GaSb substratesWissmann, H. et al. | 1999
- 623
-
Potential barrier formed at n-ZnSe regrowth homointerface by molecular beam epitaxyYamagata, Yuji et al. | 1999
- 627
-
Growth of high-quality epitaxial ZnO films on a-Al2O3Fons, P. et al. | 1999
- 633
-
Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidationChang, K.L. et al. | 1999
- 638
-
Molecular-beam epitaxy of InAs on anodized GaAs substratesMorishita, Yoshitaka et al. | 1999
- 643
-
Lattice mismatched molecular beam epitaxy on compliant GaAs-AlxOy-GaAs substrates produced by lateral wet oxidationLubyshev, D. et al. | 1999
- 648
-
Improvement of the surface morphology of the epitaxial g-Al2O3 films on Si(1 1 1) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE)Jung, Young-Chul et al. | 1999
- 652
-
Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and AlLiao, C.C. et al. | 1999
- 656
-
Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation processMatsuzaki, Yuichi et al. | 1999
- 660
-
Ferromagnet-semiconductor hybrid structures grown by molecular-beam epitaxyTanaka, M. et al. | 1999
- 670
-
Ferromagnetic transition in II-VI semimagnetic QWsCibert, J. et al. | 1999
- 674
-
Microstructure formation during MnAs growth on GaAs(0 0 1)Schippan, F. et al. | 1999
- 679
-
Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)AsShen, A. et al. | 1999
- 684
-
InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B, and (3 1 1)B substratesGuo, S.P. et al. | 1999
- 689
-
Tunneling spectroscopy and tunneling magnetoresistance in (GaMn)As ultrathin heterostructuresHayashi, T. et al. | 1999
- 693
-
Epitaxial growth of magnetic Mn2Sb1-xAsx thin films on (0 0 1)GaAsMiyanishi, S. et al. | 1999
- 698
-
Low-temperature MBE growth of GaAs on magnetic metal substratesVan Roy, W. et al. | 1999
- 702
-
Fe-GaAs(0 0 1) and Fe-GaSb(0 0 1) heterostructures: epitaxial growth and magnetic propertiesLépine, B. et al. | 1999
- 707
-
In situ characterization of the growth dynamics in molecular beam epitaxy (MBE) of Mn-based II-VI compounds: self-organized Mn structures on CdTeBonanni, A. et al. | 1999
- 711
-
Semimagnetic II-VI heterostructures for resonant tunnelingKeim, M. et al. | 1999
- 715
-
n- And p-type modulation doping of Te related semimagnetic II-VI heterostructuresArnoult, A. et al. | 1999
- 719
-
Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMSHarde, P. et al. | 1999
- 723
-
Influence of a facetted surface on the epitaxial growth and properties of a magnetic thin filmNguyen Van Dau, F. et al. | 1999
- 727
-
Pressure and Hall sensors: what does MBE allow to do?Robert, J.L. et al. | 1999
- 734
-
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistorsHackbarth, T. et al. | 1999
- 739
-
MBE grown selective recess structures for microwave and millimeter-wave power PHEMTsPao, Yi-Ching et al. | 1999
- 744
-
GSMBE grown In0.49Ga0.51P-(In)GaAs-GaAs high hole mobility transistor structuresChen, J.X. et al. | 1999
- 749
-
Very high electron mobilities at low temperatures in InxGa1-xAs-InyAl1-yAs HEMTs grown lattice-mismatched on GaAs substratesGozu, Shin-ichirou et al. | 1999
- 753
-
High-mobility electron systems in remotely-doped InSb quantum wellsGoldammer, K.J. et al. | 1999
- 757
-
Optimization of layer structure for InGaAs channel pseudomorphic HEMTsPearson, J.L. et al. | 1999
- 761
-
Ultrashort FETs formed by GaAs-AlGaAs MBE regrowth on a patterned d doped GaAs layerBurke, T.M. et al. | 1999
- 765
-
Magneto-resistance effect in InSb thin film grown using molecular beam epitaxyOkamoto, Atsushi et al. | 1999
- 769
-
Ohmic versus rectifying contacts through interfacial dipoles: Al-InxGa1-xAsMarinelli, C. et al. | 1999
- 773
-
GaAs-Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBEShinohara, K. et al. | 1999
- 778
-
Vertical transport properties through pseudo-metallic InAs thin films grown on GaAs (1 1 1)A substratesYamaguchi, Hiroshi et al. | 1999
- 782
-
Modulation doped structure with thick strained InAs channel beyond the critical thicknessNakayama, T. et al. | 1999
- 786
-
Intrinsic modulation doping in InP-based structures: properties relevant to device applicationsBuyanova, I.A. et al. | 1999
- 790
-
Coupled double parabolic quantum wells grown with the analogue techniqueBargstädt-Franke, S. et al. | 1999
- 795
-
Lateral inhomogeneities in engineered Schottky barriersHeun, S. et al. | 1999
- 800
-
Dependencies of low-temperature electronic properties of MBE-grown GaAs-AlGaAs single heterojunctions upon arsenic speciesYamada, S. et al. | 1999
- 805
-
Magneto-optical studies of GaAs-AlGaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowthSorba, L. et al. | 1999
- 810
-
Selective molecular beam epitaxy (MBE) growth of GaAs-AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristicsKoshiba, S. et al. | 1999
- 814
-
Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrates: role of atomic hydrogen in natural self-facetingNötzel, Richard et al. | 1999
- 819
-
Organised growth on vicinal surfaces: segregation and disorder effectsLaruelle, F. et al. | 1999
- 824
-
In0.15Ga0.85As-GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxyHiyamizu, S. et al. | 1999
- 828
-
Fabrication of uniform InGaAs-GaAs quantum wires on V-grooved substrate by chemical beam epitaxyKim, Sung-Bock et al. | 1999
- 833
-
Quasi-quantum-wire field-effect transistor fabricated by composition-controlled, selective growth in molecular beam epitaxySugaya, Takeyoshi et al. | 1999
- 837
-
Room temperature continuous wave operation under optical pumping of a 1.48 mm vertical cavity laser based on AlGaAsSb mirrorHarmand, J.C. et al. | 1999
- 841
-
1.5 mm Ga(Al)Sb laser grown on GaAs substrate by MBEKoeth, J. et al. | 1999
- 844
-
Growth and operation tolerances for Sb-based mid-infrared lasersGrein, C.H. et al. | 1999
- 849
-
Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mm laser structures on GaSb substratesSimanowski, S. et al. | 1999
- 854
-
AlxIn1-xAs1-ySby-GaSb effective mass superlattices grown by molecular beam epitaxyWashington-Stokes, D. et al. | 1999
- 858
-
Composition control of GaSbAs alloysBosacchi, A. et al. | 1999
- 861
-
X-ray diffraction study of InAs-AlSb interface bonds grown by molecular beam epitaxySato, A. et al. | 1999
- 864
-
Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signatureKaspi, R. et al. | 1999
- 868
-
Study of interfaces in GaInSb-InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mappingTomich, D.H. et al. | 1999
- 872
-
Optical properties of GaAs0.5Sb0.5 and In0.53Ga0.47As-GaAs0.5Sb0.5 type II single hetero-structures lattice-matched to InP substrates grown by molecular beam epitaxyYamamoto, A. et al. | 1999
- 877
-
Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodesToivonen, M. et al. | 1999
- 882
-
63% wallplug efficiency MBE grown InGaAs-AlGaAs broad-area laser diodes and arrays with carbon p-type doping using CBr4Jäger, Roland et al. | 1999
- 886
-
GaAs-(GaAs)4(AlAs)2 quantum wire lasers grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxyHigashiwaki, Masataka et al. | 1999
- 891
-
Epitaxially stacked GaAs-GaAlAs lasers using a low-resistance tunnel junctionGarcia, J.Ch et al. | 1999
- 896
-
1.3 mm InAsP p-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxyShimizu, H. et al. | 1999
- 901
-
GSMBE grown infrared quantum cascade laser structuresLi, A.Z. et al. | 1999
- 905
-
High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxyNee, Tzer-En et al. | 1999
- 909
-
Gas source MBE growth of 1.3 mm-InAsP-InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output powerChung, Hin Yiu et al. | 1999
- 914
-
Improved carrier confinement in GaInAs-AlGaAs lasers by MBE grown short period superlattice quantum well barriersSchäfer, F. et al. | 1999
- 919
-
GaAs-AlGaAs quantum cascade intersubband and interminiband emitterStrasser, G. et al. | 1999
- 923
-
High performance phosphorus-free 1.3 mm AlGaInAs-InP MQW lasersPan, Jen-Wei et al. | 1999
- 927
-
MBE-grown laser diodes based on beryllium containing II-VI semiconductorsLugauer, H.-J. et al. | 1999
- 933
-
Homoepitaxial laser diodes grown on conducting and insulating ZnSe substratesWenisch, H. et al. | 1999
- 938
-
p-Type doping of ZnSe and related materials controlled by diluting nitrogen in an inert gasTournié, E. et al. | 1999
- 942
-
Ultra-low threshold ZnSe-based lasers with novel design of active regionIvanov, S.V. et al. | 1999
- 946
-
Optical characterization of MBE grown ZnSe-based QW laser heterostructuresShubina, T.V. et al. | 1999
- 950
-
The influence of magnesium on p-type doping and optoelectronic properties of Zn1-xMgxSe-based heterostructuresVögele, B. et al. | 1999
- 954
-
MBE growth of novel MgSe-ZnSeTe: N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodesNomura, Ichirou et al. | 1999
- 957
-
Molecular beam epitaxy growth of Be-chalcogenides and fabrication of ZnSe-ZnMgBeSe laser structuresCho, M.W. et al. | 1999
- 961
-
Structural and optical studies of ZnCdSe-ZnSe-ZnMgSSe separate confinement heterostructures with different buffer layers grown by molecular beam epitaxyTu, R.C. et al. | 1999
- 965
-
High response photodiodes based on Be-chalcogenidesSiess, J. et al. | 1999
- 968
-
Visible-blind ultra-violet detectors with nano-second response timeMa, Z.H. et al. | 1999
- 971
-
Observation of the photovoltaic effect in n-ZnSe-p-GaAs heterostructuresde Melo, O. et al. | 1999
- 975
-
Characteristics of HgCdTe-CdTe hetero-epitaxial system and mid-wave diodes on 2 inch siliconDhar, N.K. et al. | 1999
- 980
-
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 mm photodetectionde Lyon, T.J. et al. | 1999
- 985
-
Solid source molecular beam epitaxy growth and characterization of resonant cavity light-emitting diodesOrsila, Seppo et al. | 1999
- 990
-
Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometryBeaudoin, M. et al. | 1999
- 994
-
High-efficiency top-emitting microcavity LEDs on GaAs and GaAs-Si substratesCarlin, J.F. et al. | 1999
- 999
-
MBE growth of highly efficient lead-salt-based Bragg mirrors on BaF2 (1 1 1) for the 4-6 mm wavelength regionSpringholz, G. et al. | 1999
- 1005
-
MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoringWu, C.Z. et al. | 1999
- 1010
-
Reduction of surface roughness of an AlAs-GaAs distributed Bragg reflector grown on Si with strained short-period superlatticesTsuji, T. et al. | 1999
- 1015
-
Optimization of the metamorphic growth of GaAs for long wavelength VCSELsBoucart, J. et al. | 1999
- 1020
-
Growth of novel broadband high reflection mirrors by molecular beam epitaxySchön, S. et al. | 1999
- 1024
-
Growth and characterization of vertical cavity structures on InP with GaAsSb-AlAsSb Bragg mirrors for 1.55 mm emissionGenty, Frédéric et al. | 1999
- 1028
-
Precise growth of high uniformity vertical cavity devices using tunable dynamic optical reflectometryVan Dijk, F. et al. | 1999
- 1032
-
Molecular beam epitaxy growth of MgZnSSe-ZnSSe-CdZnSe microcavity light-emitting diodes using in situ reflectance monitoringUusimaa, P. et al. | 1999
- 1036
-
II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrorsRoux, C. et al. | 1999
- 1040
-
Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectorsPeiris, F.C. et al. | 1999
- 1044
-
Molecular beam deposition of thin films of organic semiconductorsSassella, A. et al. | 1999
- 1049
-
Optimization of MBE p-PbSe-Si (1 1 1) growthGautier, C. et al. | 1999
- 1053
-
CdF2-CaF2 superlattices on Si(1 1 1): MBE growth, structural and luminescence studiesSokolov, N.S. et al. | 1999
- 1057
-
Heteroepitaxy of CuInxSey: Material for high efficiency and stable thin film solar cellsTiwari, A.N. et al. | 1999
- 1061
-
Control of intrinsic defects in molecular beam epitaxy grown CuInSe2Niki, S. et al. | 1999
- 1065
-
Delta p+-doped InGaAs grown by gas source MBE for novel optoelectronic memorySakata, H. et al. | 1999
- 1069
-
Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applicationsAsahi, H. et al. | 1999
- 1073
-
Third-harmonic generation and growth mechanism of vanadyl-phthalocyanine single crystals prepared on KBr substrate by molecular beam epitaxyMaeda, A. et al. | 1999
- 1077
-
Near-infrared intersubband absorption in InGaAs-AlAsSb grown by molecular beam epitaxyMozume, Teruo et al. | 1999
- 1081
-
Modeling of optical constants of InGaAs and InAlAs measured by spectroscopic ellipsometryGrassi, E. et al. | 1999
- 1085
-
Optical properties of InxGa1-xAs-GaAs MQW structures on (1 1 1)B GaAs grown by MBE: dependence on substrate miscutHopkinson, M. et al. | 1999
- 1089
-
Photoluminescence and Raman characterization of heavily doped Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromideLubyshev, D. et al. | 1999
- 1093
-
Optical responses of exciton-polaritons confined in thin GaAs-AlGaAs coupled multi-quantum-well layersIsu, Toshiro et al. | 1999
- 1097
-
The effect of oxygen incorporation on interfacial recombination in GaInP-AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cellNagao, S. et al. | 1999
- 1101
-
Highly strained InxGa1-xAs-InP quantum wells grown by solid source MBE for applications in the 2-2.3 mm spectral rangeJourba, S. et al. | 1999
- 1105
-
Molecular beam epitaxy and characterization of CdF2 layers on CaF2(1 1 1)Kaveev, A.K. et al. | 1999
- 1109
-
Novel prospects for self-assembled InAs-GaAs quantum boxesGérard, J.M. et al. | 1999
- 1117
-
Molecular beam epitaxy (MBE) growth of composite (In,Al)As-(In,Ga)As vertically coupled quantum dots and their application in injection lasersKovsh, A.R. et al. | 1999
- 1121
-
Self-assembled InP quantum dots for red LEDs on Si and injection lasers on GaAsZundel, M.K. et al. | 1999
- 1126
-
Molecular beam epitaxy of highly faceted self-assembled IV-VI quantum dots with bimodal size distributionPinczolits, M. et al. | 1999
- 1131
-
Size and shape engineering of vertically stacked self-assembled quantum dotsWasilewski, Z.R. et al. | 1999
- 1136
-
Vertically stacked quantum dots grown by ALMBE and MBEFrigeri, P. et al. | 1999
- 1139
-
In0.5Ga0.5As quantum dot lasers grown on (1 0 0) and (3 1 1)B GaAs substratesPatanè, A. et al. | 1999
- 1143
-
1.75 mm emission from self-organized InAs quantum dots on GaAsUstinov, V.M. et al. | 1999
- 1146
-
Control of size and density of self-assembled InAs dots on (0 0 1)GaAs and the dot size dependent capping processKamiya, I. et al. | 1999
- 1150
-
Volume distributions of InAs-GaAs self-assembled quantum dots by Stranski-Krastanow modeEbiko, Y. et al. | 1999
- 1154
-
Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the (0 1 0) directionEvtikhiev, V.P. et al. | 1999
- 1158
-
Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dotsKudryashov, I.V. et al. | 1999
- 1161
-
Self-organization of the InGaAs-GaAs quantum dots superlatticeZhuang, Qiandong et al. | 1999
- 1164
-
Self-assembled InAs dots and quantum wires fabricated on patterned (3 1 1)A GaAs substrates by molecular beam epitaxyYoh, Kanji et al. | 1999
- 1168
-
Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matricesYeh, Nien-Tze et al. | 1999
- 1172
-
Influence of Te on the morphology of InAs self-assembled nanocrystalsSáfar, G.A.M. et al. | 1999
- 1176
-
Alloying effects in self-assembled InAs-InP dotsBrault, J. et al. | 1999
- 1180
-
Self-organized InAs islands on InP(3 1 1)B substrates emitting around 1.55 mmFréchengues, S. et al. | 1999
- 1186
-
In(Ga)As-GaAs self-organized quantum dot light emitters grown on silicon substratesLinder, K.K. et al. | 1999
- 1190
-
Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlatticeSolomon, G.S. et al. | 1999
- 1194
-
Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force microscopy with conductive tipTanaka, Ichiro et al. | 1999
- 1198
-
Ga-droplet-induced formation of GaAs nano-islands by chemical beam epitaxyRo, Jeong-Rae et al. | 1999
- 1202
-
Self-organized InAs quantum dots in a silicon matrixEgorov, A.Yu et al. | 1999
- 1205
-
Growth of stacked GaSb-GaAs self-assembled quantum dots by molecular beam epitaxySuzuki, K. et al. | 1999
- 1209
-
Controlled growth of quantum dots on mesa topShiralagi, Kumar et al. | 1999
- 1212
-
On the formation of self-assembled Ge-Si(0 0 1) quantum dotsLe Thanh, Vinh et al. | 1999
- 1218
-
MBE growth and characterization of ZnSe self-organized dotsMa, Z.H. et al. | 1999
- 1222
-
Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxyLeonardi, K. et al. | 1999
- 1226
-
Nanoscale cluster formation on CdTe epilayersMarsal, L. et al. | 1999
- 1231
-
Optical properties of nanostructures self-organized in CdSe-ZnSe fractional monolayer superlatticesToropov, A.A. et al. | 1999