Interaction-induced dephasing of excitons in wide ZnSe-ZnMgSe single quantum wells (English)
- New search for: Wagner, H.P.
- New search for: Wagner, H.P.
- New search for: Schätz, A.
- New search for: Maier, R.
- New search for: Langbein, W.
- New search for: Hvam, J.M.
In:
Physica / E
;
2
, 1
; 82-86
;
1998
-
ISSN:
- Article (Journal) / Print
-
Title:Interaction-induced dephasing of excitons in wide ZnSe-ZnMgSe single quantum wells
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Contributors:
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Published in:Physica / E ; 2, 1 ; 82-86
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Publisher:
- New search for: North-Holland, Elsevier Science
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Place of publication:Amsterdam [u.a.]
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Publication date:1998
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ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68 / 50.94
- Further information on Basic classification
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Keywords:
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Classification:
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Source:
Table of contents – Volume 2, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Quantum dots fabricated by twofold cleaved edge overgrowthSchedelbeck, G. et al. | 1998
- 8
-
Ordering in GaInP: Is it relevant for devices?Scholz, F. et al. | 1998
- 15
-
Selective growth of GaAs quantum dots and vertical quantum wires in two-dimensional V-groovesIshida, S. et al. | 1998
- 19
-
Strain-induced quantum dot superlatticeSopanen, M. et al. | 1998
- 23
-
Interband absorption on self-assembled InAs quantum dotsDürr, C.S. et al. | 1998
- 28
-
Ballistic effects and intersubband excitations in multiple quantum well structuresSchneider, H. et al. | 1998
- 35
-
Voltage-controlled trapping of excitons and "storage of light" in lateral superlatticesZimmermann, S. et al. | 1998
- 39
-
Full-spectrum optically detected resonance (ODR) spectroscopy of GaAs-AlGaAs quantum wellsHerold, G.S. et al. | 1998
- 44
-
Detection of lateral composition modulation by magnetoexciton spectroscopyJones, E.D. et al. | 1998
- 49
-
Femtosecond dynamics of secondary radiation formation from quantum well excitonsTaylor, R.A. et al. | 1998
- 54
-
Photo-induced lifting of the degeneracy of excitonic states in coupled quantum microcavitiesArmitage, A. et al. | 1998
- 59
-
Giant optical anisotropy in semiconductor heterostructures with no-common atomKrebs, O. et al. | 1998
- 65
-
Momentum redistribution times of 2D excitons measured by transient resonantly induced intersubband absorptionShtrichman, I. et al. | 1998
- 70
-
High-field electron-hole dynamics in quantum wellsCitrin, D.S. et al. | 1998
- 73
-
Phonon modulation of Stark-cyclotron resonancesLyanda-Geller, Yuli et al. | 1998
- 78
-
Experimental evidence for a metal-insulator transition and geometric effect in a half-filled Landau levelLiang, C.-T. et al. | 1998
- 82
-
Interaction-induced dephasing of excitons in wide ZnSe-ZnMgSe single quantum wellsWagner, H.P. et al. | 1998
- 87
-
Stark effect of negatively and positively charged excitons in semiconductor quantum wellsShields, A.J. et al. | 1998
- 93
-
Tunnel transfer of excitons due to a Fano disintegration and an optical phonon emission in biased double quantum wellsFiloramo, A. et al. | 1998
- 98
-
Enhanced light emission from a single quantum well located near a metal coated surfaceHecker, N.E. et al. | 1998
- 102
-
Impact of Al interdiffusion on optical properties in GaSb-AlGaSb multiple quantum wellsLomascolo, M. et al. | 1998
- 106
-
Electro-optical probing of envelope wavefunctions in GaAs-AlGaAs parabolic quantum well structuresGeisselbrecht, W. et al. | 1998
- 111
-
Absorption magnitude and phase relaxation time in short wavelength intersubband transitions in InGaAs-AlAs quantum wells on GaAs substratesAsano, T. et al. | 1998
- 116
-
Cyclotron resonance in asymmetric double quantum wellsVasilyev, Yu B. et al. | 1998
- 121
-
Landau-level lifetimes in PbTe nipi superlattices, PbTe-PbEuTe and InAs-AlSb quantum wellsLangerak, C.J.G.M. et al. | 1998
- 126
-
Carrier dynamics in shallow GaAs-AlGaAs quantum wellsTignon, J. et al. | 1998
- 131
-
(1 1 0) oriented quantum wells and modulation-doped heterostructures for cleaved edge overgrowthWegscheider, W. et al. | 1998
- 137
-
Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substratesUsami, N. et al. | 1998
- 142
-
Capture and transit-time electron effects in high-frequency operation of multiple quantum well infrared photodetectorsRyzhii, V. et al. | 1998
- 146
-
Pressure dependence of the band-gap energy and the conduction-band mass for an n-type InGaAs-GaAs strained single-quantum wellJones, E.D. et al. | 1998
- 151
-
Minimum of oscillator strength of excitons in ultra-narrow GaAs-AlGaAs quantum wells: Theory and experimentAndreani, L.C. et al. | 1998
- 156
-
Ultrafast optical response and inter-valley scattering in GaSb-AlSb quantum wellsSmith, D.C. et al. | 1998
- 161
-
Resonant magnetopolaron effects in GaAs-AlGaAs multiple quantum well structuresWang, Y.J. et al. | 1998
- 166
-
GaAs-AlAs super-flat interfaces in GaAs-AlAs and GaAs-(GaAs)2 (AlAs)2 quantum wells grown on (4 1 1)A GaAs substrates by MBEShinohara, K. et al. | 1998
- 171
-
Radiative currents in quantum-well solar cellsEkins-Daukes, N.J. et al. | 1998
- 177
-
Measurements of far-infrared intersubband absorption linewidths in GaAs-AlGaAs quantum wells as a function of temperature and charge densityWilliams, J.B. et al. | 1998
- 181
-
Saturation absorption studies of intersubband relaxation rates in a p-GaAs-AlGaAs QW using a free electron laserCole, B.E. et al. | 1998
- 186
-
Many body effects on the spin relaxation of electrons in GaAs quantum wellsMartin, M.D. et al. | 1998
- 191
-
Hot phonon-assisted electron resonant tunnelling through a donor level in a quantum wellKrál, P. et al. | 1998
- 195
-
Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below plankvwLOHeyman, J.N. et al. | 1998
- 200
-
Well-width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriersOhtani, K. et al. | 1998
- 204
-
Saturation spectroscopy of electronic states in a magnetic field in InAs-AlxGa1-xSb single quantum wellsSingh, S.K. et al. | 1998
- 209
-
Magnetooptical studies of Cd1-xMnxTe quantum wells with parabolic confining potentialOssau, W. et al. | 1998
- 214
-
Scattering mechanisms in InAs-AlSb quantum wellsBrosig, S. et al. | 1998
- 218
-
Acoustic phonon dephasing in shallow GaAs-Ga1-xAlxAs single quantum wellsCassabois, G. et al. | 1998
- 222
-
Effects of intersubband interaction on multisubband electron transport in single and double quantum wellsHai, G.-Q. et al. | 1998
- 228
-
Measurement of electron capture probability in quantum wellMaimon, S. et al. | 1998
- 232
-
Hole mobility enhancement in GaAs-p-Al0.3Ga0.7As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBEHiyamizu, Satoshi et al. | 1998
- 237
-
Band gap and mass renormalisation in GaInP-AlGaInP quantum wellsPriest, A.N. et al. | 1998
- 242
-
Binding energy of impurities and excitons in the quasi-one-dimensional electron gas: Screening effects for oscillator confinementCalmels, L. et al. | 1998
- 247
-
Properties of Si d-layers embedded in GaAsHoltz, P.O. et al. | 1998
- 252
-
Electronic subband structure in two-dimensional electron gases under intense laser radiationsXu, W. et al. | 1998
- 256
-
Inter-Landau level shakeup process compared in excitonic absorption and recombination spectra of modulation-doped quantum wellsKheng, K. et al. | 1998
- 261
-
Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layerAdamowicz, Boguslawa et al. | 1998
- 267
-
Optical properties of d-doped semiconductors: Plasmon-phonon coupling and Raman spectraHai, Guo-Qiang et al. | 1998
- 272
-
Strain-induced quantum confinement of electron gasesStallard, W.G. et al. | 1998
- 277
-
Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopyRettig, R. et al. | 1998
- 282
-
Ballistic electron transport in vertical biased superlatticesRauch, C. et al. | 1998
- 287
-
Hybrid stable-chaotic states in coupled quantum well stadiaMartin, P.M. et al. | 1998
- 291
-
Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlatticesSilveira, E. et al. | 1998
- 295
-
High-frequency current oscillations in doped GaAs-AlAs superlattices by travelling dipole domainsSchomburg, E. et al. | 1998
- 299
-
Staggered excitonic resonances of Stark-ladder transitions in an asymmetric double-well GaAs-AlAs superlatticeImanishi, T. et al. | 1998
- 303
-
Selectivity control of Stark-ladder transitions in asymmetric double-well GaAs-AlAs superlattices by barrier sequence modulationTakeuchi, M. et al. | 1998
- 308
-
Carrier transport and photoluminescence affected by Gamma-X resonance in GaAs-AlAs type-I superlatticesMimura, H. et al. | 1998
- 313
-
GaInAs-AlInAs superlattice oscillators for optical to mm-wave conversionPalmier, J.F. et al. | 1998
- 320
-
InAs-(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formationWagner, J. et al. | 1998
- 325
-
Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlatticesFollstaedt, D.M. et al. | 1998
- 330
-
Intersubband lifetimes in InAs-GaSb superlattices using saturated absorption spectroscopyPoulter, A.J.L. et al. | 1998
- 334
-
Zone-edge optical transitions in GaAs-AlAs lateral superlattices grown on vicinal surfaces by molecular beam epitaxyMélin, T. et al. | 1998
- 340
-
Type-II biexcitons in GaAs-AlAs short-period superlatticesNakayama, M. et al. | 1998
- 345
-
Intersubband transitions in InAs-GaSb semi-metallic superlatticesPoulter, A.J.L. et al. | 1998
- 349
-
Vertical transport and relaxation mechanisms in d-doping superlatticesMalzer, S. et al. | 1998
- 353
-
Theory of the band mixing induced negative magnetoresistance in broken gap superlatticesSymons, D.M. et al. | 1998
- 358
-
Growth and characterization of DyP-GaAs and DyAs-GaAs-based heterostructures and superlatticesLee, P.P. et al. | 1998
- 363
-
Mini-gaps and novel giant negative magnetoresistance in InAs-GaSb semimetallic superlatticesLakrimi, M. et al. | 1998
- 368
-
Optical properties of the (3 1 1) oriented GaAs-AlAs superlattices and quantum wire-like structuresMilekhin, A. et al. | 1998
- 372
-
Epitaxial ferromagnetic thin films and heterostructures of Mn-based metallic and semiconducting compounds on GaAsTanaka, Masaaki et al. | 1998
- 381
-
Spin-dependent transport in a magnetic two-dimensional electron gasSmorchkova, I.P. et al. | 1998
- 388
-
Spin coherence in semiconductor heterostructuresSham, L.J. et al. | 1998
- 394
-
Optical studies of spin precession in magnetic two-dimensional electron gasesKikkawa, J.M. et al. | 1998
- 399
-
Antiferromagnetic phase transition and interlayer spin correlations in short-period EuTe-PbTe superlatticesKepa, H. et al. | 1998
- 404
-
Magnetotransport properties of new III-V-based magnetic(GaMnAs)-nonmagnetic(AlAs) semiconductor superlatticesHayashi, T. et al. | 1998
- 408
-
Coherence properties of submicron GaAs-AlGaAs rings with a ferromagnetic gateBykov, A.A. et al. | 1998
- 412
-
Theory of the coherent spin dynamics in magnetic semiconductor quantum wellsLinder, N. et al. | 1998
- 417
-
Photocarrier induced ferromagnetic order in III-V-based magnetic semiconductor heterostructures of (In, Mn)As-GaSbKoshihara, S. et al. | 1998
- 421
-
Giant magnetoresistance and hysteretic effects in hybrid semiconductor-ferromagnet devicesNogaret, A. et al. | 1998
- 426
-
Spin-susceptibility and spin-density excitations in the correlated quasi-one-dimensional electron gasGold, A. et al. | 1998
- 431
-
Ultrasonic light storage in a quantum well: A photon assembly lineWixforth, A. et al. | 1998
- 437
-
Direct measurement of the spatial displacement of Bloch-oscillating electrons in semiconductor superlatticesSudzius, M. et al. | 1998
- 441
-
Direct writing of in-plane-gated nanostructures by focused laser beam-induced dopingBaumgartner, P. et al. | 1998
- 449
-
Quantum cascade electroluminescence in GaAs-AlGaAs structuresKruck, P. et al. | 1998
- 453
-
First resonant tunneling via a light-hole ground stateLampin, J.F. et al. | 1998
- 458
-
InAs-inserted-channel InAlAs-InGaAs inverted HEMTs with direct ohmic contactsAkazaki, Tatsushi et al. | 1998
- 463
-
A concept for a tunable antenna-coupled intersubband terahertz (TACIT) detectorCates, C.L. et al. | 1998
- 468
-
1.55 mm intersubband pumping of an In0.53Ga0.47As-AlAs: InP symmetric double quantum well terahertz laserHarrison, P. et al. | 1998
- 473
-
Population inversion and intersubband electroluminescence in GaAs-AlGaAs triple barrier tunnelling structuresLi, Y.B. et al. | 1998
- 478
-
Polarised hot electron luminescence in p-GaAs: Electric field effectsSaxena, V. et al. | 1998
- 483
-
S-shaped current bistability in a bipolar resonant tunneling diodeKuhn, O. et al. | 1998
- 489
-
Resonant tunnelling diodes as probes of electronic transport in ion-implanted semiconductorsKelly, M.J. et al. | 1998
- 493
-
Strong impact of impurity bands on domain formation in superlatticesWacker, Andreas et al. | 1998
- 498
-
Transport properties of a two-dimensional-hole gas with density varied over a very wide rangeHanein, Y. et al. | 1998
- 502
-
Transport through a buried double-barrier single-electron transistor at low temperaturesFörster, A. et al. | 1998
- 507
-
Modeling of finite size effects in resonant tunneling diodesHunter, A.T. et al. | 1998
- 511
-
A combined model for miniband and hopping transport in superlatticesRott, S. et al. | 1998
- 515
-
Current transport in multiple superlattice structuresStrasser, G. et al. | 1998
- 519
-
GaAs-AlGaAs quantum ring interferometer with a high-density two-dimensional electron gasBykov, A.A. et al. | 1998
- 523
-
Quantum Hall effect in a saddle-point systemBudantsev, M.V. et al. | 1998
- 527
-
Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As-In0.52Al0.48As heterostructureNitta, Junsaku et al. | 1998
- 532
-
Optical properties of cubic GaN and (In, Ga)NBrandt, O. et al. | 1998
- 539
-
One- and two-photon absorption spectroscopy of GaN-AlGaN quantum wellsCingolani, R. et al. | 1998
- 542
-
Gain studies and lasing in excitonic waveguides of II-VI submonolayer structuresStrassburg, M. et al. | 1998
- 547
-
UHV-ECR etching and in-situ analysis of wide bandgap II-VI nanostructuresBacher, G. et al. | 1998
- 552
-
Direct imaging of local strain relaxation along the {1 0 1} side facets and the edges of hexagonal GaN pyramids by cathodoluminescence microscopyBertram, F. et al. | 1998
- 557
-
Possible impact of surface morphology on stimulated emission in GaN-AlGaN double heterostructuresChristen, J. et al. | 1998
- 562
-
Organic heterostructures for electronic and photonic devicesBöhler, A. et al. | 1998
- 573
-
Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wellsOta, K. et al. | 1998
- 578
-
Hot carrier relaxation in InAs-GaAs quantum dotsHeitz, R. et al. | 1998
- 583
-
Manipulation of the lateral potential geometry of a quantum dot located in a multiple gated vertical single electron transistorAusting, David Guy et al. | 1998
- 588
-
Time-resolved spectroscopy of single quantum dotsRoussignol, Ph et al. | 1998
- 594
-
Electroluminescence studies of stacked self-assembled InAs-GaAs-quantum dots embedded in a Bragg resonatorArzberger, M. et al. | 1998
- 599
-
Valence band structure of ordered GaInP determined by polarization-dependent electroabsorption measurementsKiesel, P. et al. | 1998
- 603
-
Theory of luminescence from highly excited self-assembled quantum dotsWojs, Arkadiusz et al. | 1998
- 609
-
Spectroscopy of excitonic Zeeman levels in single quantum dotsSchaller, A. et al. | 1998
- 614
-
Strain tensor and electron and hole spectra in self-assembled InGaAs-GaAs and SiGe-Si quantum dotsJiang, Hongtao et al. | 1998
- 619
-
Edge spin-density modes in quantum dots in a magnetic fieldBiese, G. et al. | 1998
- 623
-
Effects of a lateral electric field on excitons in a single quantum dotHeller, W. et al. | 1998
- 627
-
Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dotsSchmidt, K.H. et al. | 1998
- 632
-
Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots buried in pn-junctionSugiyama, Y. et al. | 1998
- 637
-
Optical properties of near surface-InAs quantum dots and their formation processesKamiya, I. et al. | 1998
- 643
-
Modes of higher energy levels in self-assembled InAs-GaAs quantum dotsNoda, Susumu et al. | 1998
- 648
-
Spin-density waves in superdeformed quantum dotsReimann, S.M. et al. | 1998
- 652
-
Light scattering from self-assembled quantum disksHawrylak, P. et al. | 1998
- 657
-
Magneto-tunnelling spectroscopy of single self-assembled InAs quantum dots in AlAsThornton, A.S.G. et al. | 1998
- 662
-
Magneto-photoluminescence and electroluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planesPolimeni, A. et al. | 1998
- 667
-
Manipulations of size and density of self-assembled quantum dots grown by MOVPEJohansson, Jonas et al. | 1998
- 672
-
InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substratesGuo, S.P. et al. | 1998
- 678
-
Multiparticle states and Coulomb blockade in InAs-GaAs quantum dotsLelong, Ph et al. | 1998
- 682
-
Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAsRubin, M.E. et al. | 1998
- 685
-
Signatures of exciton-cavity coupling in semiconductor microcavitiesTao, I.W. et al. | 1998
- 689
-
Magneto-optical spectroscopy of InAs-GaAs self-organised quantum dotsWilson, L.R. et al. | 1998
- 694
-
Optical spectroscopy of a single self-assembled quantum dotDekel, E. et al. | 1998
- 701
-
Terahertz excitation of AFM-defined room temperature quantum dotsQureshi, N. et al. | 1998
- 704
-
Electronic coupling effects in self-assembled InAs quantum dotsLuyken, R.J. et al. | 1998
- 709
-
Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columnsSolomon, G.S. et al. | 1998
- 714
-
InAs quantum dot formation on GaAs pyramids by selective area MOVPEUmeda, Tetsuo et al. | 1998
- 720
-
Radiative and non-radiative inter-subband transition in self assembled quantum dotsJiang, Hongtao et al. | 1998
- 725
-
New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneckGrundmann, M. et al. | 1998
- 729
-
Room temperature operation of AlInAs-AlGaAs quantum dot lasersHinzer, K. et al. | 1998
- 734
-
Trapping of a single photogenerated hole by an InAs quantum dot in GaAs-n-AlGaAs quantum trap FET and its spectral response in the near-infrared regimeYusa, G. et al. | 1998
- 738
-
Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active regionMirin, Richard P. et al. | 1998
- 743
-
Self-consistent electronic structure, coulomb interaction, and spin effects in self-assembled strained InAs-GaAs quantum dot structuresFonseca, L.R.C. et al. | 1998
- 748
-
Nanolithography by local anodic oxidation of metal films using an atomic force microscopeHeld, R. et al. | 1998
- 753
-
Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 mmBernhard-Höfer, K. et al. | 1998
- 758
-
Stress and pressure effects on a Si-SiGe double-barrier structure studied by magnetotunnelling spectroscopyGassot, P. et al. | 1998
- 763
-
Design and fabrication of Si-SiGe n-type MODFETsGlück, M. et al. | 1998
- 768
-
Modulation-doped Si1-x-yGexCy p-type Hetero-FETsGlück, M. et al. | 1998
- 772
-
Threading dislocation reduction in GaAs films on thin Si substrateslMaehashi, Kenzo et al. | 1998
- 777
-
Recombination of carriers in SiGe-Si heterostructures measured by photomodulated intersubband absorptionDekel, E. et al. | 1998
- 781
-
Phase transitions at zero magnetic field in Si-SiGe quantum wellsD'Iorio, M. et al. | 1998
- 785
-
Multi-charged acceptor centers in p-doped Si-Si1-xGex-Si quantum wells in the presence of a magnetic fieldRego, Luis G.C. et al. | 1998
- 789
-
Structural characterization of self-assembled Ge dot multilayers by X-ray diffraction and reflectivity methodsDarhuber, A.A. et al. | 1998
- 794
-
Optical properties of thin layers of GaAs strained to InPGerling, Maria et al. | 1998
- 799
-
Terahertz absorption in a double quantum well system under a magnetic fieldZhang, C. et al. | 1998
- 804
-
InAs quantum boxes in GaAs-AlAs pillar microcavities: from spectroscopic investigations to spontaneous emission controlGérard, J.M. et al. | 1998
- 809
-
Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxyKumakura, K. et al. | 1998
- 815
-
An electrical and optical study of electrons in triple barrier structuresKuo, C.-Y. et al. | 1998
- 820
-
Optical observation of twinning patterns characteristic of CuPtB atomic ordering in GaInPSapriel, J. et al. | 1998
- 824
-
Arsenic incorporation in InP epitaxial layers: a Raman scattering studyQuagliano, L.G. et al. | 1998
- 829
-
Cavity polariton resonant Raman scattering in III-V and II-VI microcavitiesFainstein, A. et al. | 1998
- 834
-
Raman scattering study of the plasmon modes in bilayer systemsKainth, D.S. et al. | 1998
- 839
-
Exciton luminescence polarization decay in type II semiconductor heterostructuresde Andrada e-Silva, Erasmo A. et al. | 1998
- 843
-
Time-resolved carrier drag effect in quantum wells and wiresNagamune, Y. et al. | 1998
- 850
-
Probing of superlattice minibands by ballistic electron emission microscopyEder, C. et al. | 1998
- 854
-
Optical spectroscopy of II-VI (magnetic) semiconductor quantum dotsCrowell, P.A. et al. | 1998
- 858
-
InAs-AlGaSb nanoscale device fabrication using AFM oxidation processSasa, S. et al. | 1998
- 862
-
Direct observation of localized excitons in quantum wires by spatially resolved photoluminescenceVouilloz, F. et al. | 1998
- 867
-
Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localizationHey, R. et al. | 1998
- 873
-
XRD investigation of the relaxation of InAsP layers grown by CBE on (1 0 0) InPMarschner, T. et al. | 1998
- 878
-
Electron energy loss spectroscopy during MBE growthBraun, W. et al. | 1998
- 883
-
In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structureUsami, N. et al. | 1998
- 887
-
Supercurrent flow through a semiconductor: the transport properties of superconductor-semiconductor hybrid structuresKroemer, Herbert et al. | 1998
- 894
-
Induced superconductivity and residual resistance in InAs quantum wells contacted with superconducting Nb electrodesThomas, Mason et al. | 1998
- 899
-
Electrical transport through magnetic barrier structuresIbrahim, I.S. et al. | 1998
- 904
-
Ferromagnetic (Ga,Mn)As and its heterostructuresOhno, H. et al. | 1998
- 909
-
Physics and applications of microcavity light emittersBenisty, H. et al. | 1998
- 915
-
Strong and weak coupling regime in pillar semiconductor microcavitiesBloch, J. et al. | 1998
- 920
-
Boundary-element calculations of electromagnetic band-structure of photonic crystalsKnipp, P.A. et al. | 1998
- 925
-
Radiative transfer in semiconductor microcavitiesWainstain, J. et al. | 1998
- 929
-
Spin splitting in GaAs quantum wire structuresSilveira, E. et al. | 1998
- 933
-
Enhancement of electron conductivity in GaAs-AlAs coupled quantum wiresPetit, Florent et al. | 1998
- 940
-
Band-mixing and coupling in single and double quantum wire structuresDupertuis, M.A. et al. | 1998
- 944
-
Novel magneto-resistance oscillations in laterally modulated two-dimensional electrons with 20 nm periodicity formed on vicinal GaAs (1 1 1)B substratesNakamura, Y. et al. | 1998
- 949
-
Optical spectroscopy of GaAs-AlGaAs v-groove quantum wiresSteer, M.J. et al. | 1998
- 954
-
Structure and optical properties of V-groove quantum wire superlatticesDucommun, Y. et al. | 1998
- 959
-
Temperature dependence of photoluminescence from high-density GaAs-(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxyHigashiwaki, Masataka et al. | 1998
- 964
-
Spontaneous spin polarization in quantum wiresWang, Chuan-Kui et al. | 1998
- 969
-
First observation of symmetry breaking in strained In0.7Ga0.3As-InP V-groove quantum wiresStier, Oliver et al. | 1998
- 974
-
Raman spectroscopy and far infrared studies of the confinement potential in narrow deep-etched wiresPerez, Florent et al. | 1998
- 979
-
Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs (3 1 1)A substratesNötzel, Richard et al. | 1998
- 983
-
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