Life cycle of grown-in defects in silicon as observed by IR-LST (English)
- New search for: Kissinger, G.
- New search for: Kissinger, G.
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In:
Journal of crystal growth
;
210
, 1-3
; 7-14
;
2000
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ISSN:
- Article (Journal) / Print
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Title:Life cycle of grown-in defects in silicon as observed by IR-LST
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Contributors:Kissinger, G. ( author ) / Vanhellemont, J.
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Published in:Journal of crystal growth ; 210, 1-3 ; 7-14
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2000
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
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Keywords:
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Source:
Table of contents – Volume 210, Issue 1-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Analysis of grown-in defects in Czochralski SiItsumi, Manabu et al. | 2000
- 7
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Life cycle of grown-in defects in silicon as observed by IR-LSTKissinger, G. et al. | 2000
- 15
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TEM observation of grown-in defects in CZ and epitaxial silicon wafers detected with optical shallow defect analyzerMinowa, K. et al. | 2000
- 20
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Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometerNakai, K. et al. | 2000
- 26
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Investigation on grown-in defects in CZ-Si crystal under slow pulling rateFurukawa, Jun et al. | 2000
- 31
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Accuracy of differential method to distinguish crystal originated particles from light point defects in Czochralski-grown silicon wafersShimoi, N. et al. | 2000
- 36
-
Photoconductivity characterization of silicon wafer mirror-polishing subsurface damage related to gate oxide integrityOgita, Y. et al. | 2000
- 40
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Evaluation of surface defects on SIMOX and their influences on device characteristicsNaruoka, H. et al. | 2000
- 45
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Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rateTanahashi, K. et al. | 2000
- 49
-
Simulation of point defect distributions in silicon crystals during melt-growthNakamura, K. et al. | 2000
- 54
-
Molecular dynamics analysis on diffusion of point defectsKakimoto, K. et al. | 2000
- 60
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Uniaxial strain observed in solid-liquid interface during crystal growth from melted Si: a molecular dynamics studyNishihira, Ken et al. | 2000
- 65
-
Change in shape of oxygen precipitate grown by thermal annealingSakai, K. et al. | 2000
- 69
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Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence methodYamamoto, T. et al. | 2000
- 74
-
FT-IR study of electron- or proton-irradiated Si crystals for solar cellsNagai, N. et al. | 2000
- 80
-
Thermal behavior of He-irradiation-induced defects in siliconNakano, Yoshitaka et al. | 2000
- 85
-
Self-formation of ultra small structures on vicinal Si substrates for nano-device arrayHanajiri, Tatsuro et al. | 2000
- 90
-
Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafersIkeda, K. et al. | 2000
- 94
-
Analysis of platelet distribution in H ion-implanted siliconIwata, Hiroyuki et al. | 2000
- 98
-
Characterization of SOI wafers by X-ray CTR scatteringShimura, T. et al. | 2000
- 102
-
Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscopeYamada, Masayoshi et al. | 2000
- 107
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A study of interface states of directly bonded silicon-on-insulator structuresBuldygin, S.A. et al. | 2000
- 112
-
Direct observation of electrically harmful surface defects of Si wafer immersed in slightly Cu-contaminated waterKobayashi, T. et al. | 2000
- 116
-
Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopySandhu, A. et al. | 2000
- 122
-
Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stressKamiura, Y. et al. | 2000
- 128
-
Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in siliconYoshida, Masayuki et al. | 2000
- 132
-
The study of Pt depth profile in semiconductors using cyclotron-produced radioisotopesYagi, Takahide et al. | 2000
- 137
-
Subtracted Auger electron spectra of heavily doped transition-metal impurities in SiAbe, S. et al. | 2000
- 143
-
TEM assessment of GaN epitaxial growthBrown, Paul D. et al. | 2000
- 151
-
Recent advances in defect-selective etching of GaNWeyher, J.L. et al. | 2000
- 157
-
Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substratesKang, Junyong et al. | 2000
- 162
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Structural analysis of GaN layers with columnar structures grown by hydrogen-assisted ECR-MBEAraki, T. et al. | 2000
- 167
-
Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffractionZandbergen, H.W. et al. | 2000
- 172
-
Residual strain in annealed GaAs single-crystal wafers as determined by scanning infrared polariscopy, X-ray diffraction and topographyHerms, M. et al. | 2000
- 177
-
Analysis of peculiar structural defects created in GaAs by diffusion of copperFrigeri, C. et al. | 2000
- 182
-
Cleavage of thin films for X-HREM study of interface quality in heterostructuresVorob'ev, A.B. et al. | 2000
- 187
-
X-ray scattering topographic observation of ZnSe and ZnTe bulk crystalsShinbara, M. et al. | 2000
- 193
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Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiationKumaresan, R. et al. | 2000
- 198
-
Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRamanMartinez, O. et al. | 2000
- 203
-
Laser scattering experiments in VCz GaAsNaumann, M. et al. | 2000
- 207
-
Quantitative topographic assessment of Cu incorporation in GaAsBaeumler, M. et al. | 2000
- 212
-
Laser scattering defects in MBE-grown GaAs epitaxial layers related to dislocations in semi-insulating substratesKiyama, M. et al. | 2000
- 216
-
Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopiesKurai, Satoshi et al. | 2000
- 220
-
Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layersAvella, M. et al. | 2000
- 226
-
Microscopic photoluminescence evaluation of bright spots in Fe-doped InP wafersWakahara, M. et al. | 2000
- 230
-
AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layersKishino, M. et al. | 2000
- 234
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Relation between light scattered intensity and Raman shift in neighborhood of dislocation walls in ZnSe crystalsYukawa, Yoko et al. | 2000
- 238
-
Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescenceZanardi Ocampo, J.M. et al. | 2000
- 242
-
Characterization of oxygen-related defects in p-Al0.3Ga0.7As by DLTSIshii, H. et al. | 2000
- 247
-
Laplace defect spectroscopy for recognition of deep-level fine structuresKang, Junyong et al. | 2000
- 251
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Stoichiometry and Te related defect in n-Al0.3Ga0.7AsMurai, A. et al. | 2000
- 255
-
Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurementsFukuyama, A. et al. | 2000
- 260
-
Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopyTokuda, Y. et al. | 2000
- 264
-
Recombination centers in electron irradiated GaInP: application to the degradation of space solar cellsKhan, Aurangzeb et al. | 2000
- 268
-
Investigations on the low-energy proton-induced defects on Ti-n-GaAs Schottky barrier diode parametersJayavel, P. et al. | 2000
- 273
-
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN filmsEmtsev, V.V. et al. | 2000
- 278
-
Complex defects in electron-irradiated ZnSShono, Y. et al. | 2000
- 283
-
Effect of C-B sequential implantation on the B acceptors in 4H-SiCNakano, Yoshitaka et al. | 2000
- 288
-
Ytterbium-induced Jahn-Teller states in Pb1-xGexTe alloysSkipetrov, E.P. et al. | 2000
- 292
-
Gallium-induced defect states in Pb1-xGexTe alloysSkipetrov, E.P. et al. | 2000
- 296
-
Near-field photocurrent spectroscopy of laser diode devicesTomm, J.W. et al. | 2000
- 303
-
Comparison between standard and near-field cathodoluminescenceHeiderhoff, R. et al. | 2000
- 307
-
Interdiffusion-induced degradation of 1017nm ridge waveguide laser diodesRechenberg, I. et al. | 2000
- 313
-
Reliability and degradation mechanisms of InGa(Al)As-GaAs DQW high-power diode lasersKreutz, E.W. et al. | 2000
- 318
-
Watching chips work: picosecond hot electron light emission from integrated circuitsKash, J.A. et al. | 2000
- 323
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Can physical analysis aid in device characterization?Chan, D.S.H. et al. | 2000
- 331
-
Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devicesZanoni, Enrico et al. | 2000
- 341
-
Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffractionToda, Akio et al. | 2000
- 346
-
High-speed mapping of grown-in defects and their influence in large-area silicon photovoltaic devicesSopori, Bhushan et al. | 2000
- 351
-
Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bondingVainer, B.G. et al. | 2000
- 356
-
Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuitsVainer, B.G. et al. | 2000
- 361
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Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaicsAstafiev, O.V. et al. | 2000
- 366
-
Classification of etch pits at silicon wafer surface using image-processing instrumentAkatsuka, M. et al. | 2000
- 370
-
A quantitative approach to Makyoh (magic-mirror) topographyRiesz, Ferenc et al. | 2000
- 375
-
Influence of distributed defects on the photoelectric characteristics of a large-area deviceSopori, Bhushan et al. | 2000
- 379
-
Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si waferYoshida, H. et al. | 2000
- 384
-
Effects of an inhomogeneous carrier concentration depth profile on deep-level transient spectroscopy measurementsIto, A. et al. | 2000
- 388
-
Analysis of trace Co in synthetic diamonds using synchrotron radiation excited X-ray fluorescence analysisHayakawa, Shinjiro et al. | 2000
- 395
-
Synchrotron-based impurity mappingMchugo, S.A. et al. | 2000
- 401
-
Nano-scale defect analysis by BEEMvon Känel, H. et al. | 2000
- 408
-
Defects and their charge imaging on semiconductor surfaces by noncontact atomic force microscopy and spectroscopyMorita, S. et al. | 2000
- 416
-
Imaging of hydrogen distribution on solid surfaces by desorption spectroscopyUeda, Kazuyuki et al. | 2000