Structural properties of fission-product doped ZrO2 and MgAl2O4 single crystals (English)
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In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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166
; 258-262
;
2000
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ISSN:
- Article (Journal) / Print
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Title:Structural properties of fission-product doped ZrO2 and MgAl2O4 single crystals
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- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2000
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 166
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Atomistic modelling of radiation effects: Towards dynamics of exciton relaxationShluger, Alexander L. et al. | 2000
- 13
-
Ion implantation in icesStrazzulla, G. et al. | 2000
- 19
-
Calculation of the first four moments of electronic energy loss of protons in insulatorsBiersack, J.P. et al. | 2000
- 26
-
Depth distribution of Cu, Ag and Au ions implanted at low energy into insulatorsStepanov, A.L. et al. | 2000
- 31
-
Damage kinetics in MeV gold ion - Irradiated crystalline quartzRamos, S.M.M. et al. | 2000
- 35
-
Electron excitation relaxation in wide-gap single crystal insulators under swift heavy-ion irradiationYavlinskii, Yu N. et al. | 2000
- 40
-
Radiation displacement defect formation in some complex oxide crystalsUbizskii, S.B. et al. | 2000
- 47
-
Radiation-induced formation of stable charge centers in rare-gas solidsSavchenko, Elena V. et al. | 2000
- 51
-
X-ray core states, atomic size and Moseley's lawSmith, D.Y. et al. | 2000
- 57
-
Irradiation temperature dependence of defect formation of nitrides (A1N and c-BN) during neutron irradiationsAtobe, Kozo et al. | 2000
- 64
-
High quality of ultra-thin silicon oxynitride films formed by low-energy nitrogen implantation into silicon with additional plasma or thermal oxidationDiniz, J.A. et al. | 2000
- 70
-
Study of radiation defects for AlN ceramics under O+ irradiationHu, Quanli et al. | 2000
- 75
-
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen systemVolz, K. et al. | 2000
- 82
-
Dependence of film thickness on nitrogen ion energy and substrate temperature for titanium nitride films on stainless steel using an ion beam assisted deposition techniqueYokota, Katsuhiro et al. | 2000
- 87
-
Modification of the surfaces of stainless steel during titanium nitride deposition by a dynamic mixing methodYokota, Katsuhiro et al. | 2000
- 92
-
Properties of oxide and nitride ceramics after ion-heat modificationKabyshev, A.V. et al. | 2000
- 98
-
Models and mechanisms of irradiation-induced amorphization in ceramicsWeber, W.J. et al. | 2000
- 107
-
Production and stability of dislocation loops in an MgO-Al2O3 system under concurrent irradiation with ions and electronsYasuda, Kazuhiro et al. | 2000
- 115
-
Dual mechanism of ion beam mixing of noble metals with oxide matricesPivin, J.C. et al. | 2000
- 119
-
PrefaceWesch, Werner et al. | 2000
- 121
-
Helium ion implantation in SiAlON: Characterisation of cavity structures using TEM and IBAJohnson, P.B. et al. | 2000
- 128
-
Atomic transport effects in Kr-ion bombarded ZrO2-Fe ternary systemTuros, A. et al. | 2000
- 133
-
Aluminum and aluminum nitride formation in sapphire by ion beam synthesisLindner, Jörg K.N. et al. | 2000
- 140
-
The mechanical properties of alumina films formed by plasma deposition and by ion irradiation of sapphireBarbour, J.C. et al. | 2000
- 148
-
Epitaxial recrystallization of alkali-ion implanted a-quartzRoccaforte, F. et al. | 2000
- 154
-
Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantationEnsinger, W. et al. | 2000
- 159
-
Electrical insulating potential of aluminum nitride under irradiation with fast electronsHowlader, M.M.R. et al. | 2000
- 165
-
Dimensional changes of Al2O3, MgO, MgAl2O4, AlN and Si3N4 by helium implantationHe, Zhiyong et al. | 2000
- 171
-
Modification of the refractive index and the dielectric constant of silicon dioxide by means of ion implantationSwart, J.W. et al. | 2000
- 177
-
Direct excitation of high temperature thermoluminescence (HTTL) in quartz by low temperature X-irradiationHalperin, A. et al. | 2000
- 183
-
Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E. et al. | 2000
- 188
-
Influence of oxygen ion implantation on the damage and annealing kinetics of iron-implanted sapphireMchargue, Carl J. et al. | 2000
- 193
-
Influence of tin ion implantation on the damage and annealing kinetics of sapphireMchargue, Carl J. et al. | 2000
- 198
-
Peculiarity of the thermoluminescence of rubyFlerov, V. et al. | 2000
- 204
-
Annealing behaviour of natural topaz implanted with W and Cr ionsMarques, C. et al. | 2000
- 209
-
Dosimetric properties of natural brazilian topaz: A thermally stimulated exoeletronic emission and thermoluminescence studySouza, Divanizia N. et al. | 2000
- 215
-
Formation of gold nanoclusters in MgO by ion implantation at elevated temperaturesFedorov, A.V. et al. | 2000
- 220
-
Photoconversion of F+ centers in neutron-irradiated MgOMonge, M.A. et al. | 2000
- 225
-
Copper implantation defects in MgO observed by positron beam analysis, RBS and X-TEMvan Huis, M.A. et al. | 2000
- 232
-
Electronic excitations and luminescence in MgO:Ge single crystalsKärner, T. et al. | 2000
- 238
-
Helium irradiation effects in single crystals of MgAl2O4Neeft, E.A.C. et al. | 2000
- 244
-
Charge carrier rearrangement in spinel crystals irradiated at low temperaturesGritsyna, V.T. et al. | 2000
- 250
-
Radiation effects on MgAl2O4-stabilized ZrO2 composite material under He+ or Xe2+ ion irradiationSasajima, N. et al. | 2000
- 258
-
Structural properties of fission-product doped ZrO2 and MgAl2O4 single crystalsThomé, L. et al. | 2000
- 263
-
He-ion damage and He-release from spinel MgAl2O4Fromknecht, R. et al. | 2000
- 270
-
Low-temperature and high-temperature experiments on electron-irradiated Li2O: Molecular-oxygen freezing and metallic-lithium meltingBeuneu, F. et al. | 2000
- 275
-
Characterisation of Li-colloids in electron-irradiated Li2O-crystals by neutron scatteringVajda, P. et al. | 2000
- 280
-
Redistribution and incorporation of iridium implanted into lithium niobateKling, A. et al. | 2000
- 284
-
Radiation effects in Li2B4O7 oxide crystalsSkvortsova, V. et al. | 2000
- 289
-
The influence of g-irradiation on electrophysical properties of spinel-based oxide ceramicsKovalskiy, A.P. et al. | 2000
- 293
-
Ion irradiation-induced amorphization of six zirconolite compositionsWang, S.X. et al. | 2000
- 299
-
Theoretical and experimental study of primary radiation defects in KNbO3 perovskite crystalsKotomin, E.A. et al. | 2000
- 305
-
Low temperature X-ray luminescence of KNbO3 crystalsPopov, A.I. et al. | 2000
- 309
-
Radiation damage in KTiOPO4 by ion implantation of light elementsOpfermann, Thomas et al. | 2000
- 314
-
Damage evolution in Xe-ion irradiated rutile (TiO2) single crystalsLi, Fuxin et al. | 2000
- 322
-
Tin implanted in rutile single-crystals: Lattice location, diffusion and precipitationFromknecht, R. et al. | 2000
- 329
-
The study of time-resolved absorption and luminescence in PbWO4 crystalsGrigorjeva, L. et al. | 2000
- 334
-
Irradiation induced densification of tungsten trioxide filmsMerz, M. et al. | 2000
- 339
-
Structural transformation in two yttrium oxide powders irradiated with swift molybdenum ionsHémon, S. et al. | 2000
- 345
-
Transport of oxygen atoms mediated by electronic excitationAvasthi, D.K. et al. | 2000
- 350
-
A novel approach to angular-resolved X-ray photoelectron spectroscopy depth-profilingStanchev, A. et al. | 2000
- 357
-
Molecular dynamics study of the threshold displacement energy in MgOPark, Byeongwon et al. | 2000
- 364
-
Radiation defects and their annealing behaviour in ion-implanted diamondsPrins, Johan F. et al. | 2000
- 374
-
Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiCJiang, W. et al. | 2000
- 379
-
Amorphization with ion irradiation and recrystallization by annealing of SiC crystalsAihara, J. et al. | 2000
- 385
-
Solid state reaction in Si-C multilayers induced by ion bombardmentHarbsmeier, F. et al. | 2000
- 390
-
Ion beam synthesis of buried oxide layers in silicon carbideIshimaru, Manabu et al. | 2000
- 395
-
Acceptor ion-implantation in SiCHandy, Evan M. et al. | 2000
- 399
-
Irradiation temperature dependence of production efficiency of defects induced in neutron-irradiated silicon carbidesOkada, M. et al. | 2000
- 404
-
Ion beam effects on the hydrogenated bonds of amorphous silicon carbideMusumeci, P. et al. | 2000
- 410
-
Defect annealing kinetics in irradiated 6H-SiCWeber, W.J. et al. | 2000
- 415
-
Property change of diamond-like carbon thin films due to ion implantationKakiuchi, H. et al. | 2000
- 420
-
Amorphous carbon nitride films irradiated with argon ionsWang, Jianjun et al. | 2000
- 426
-
Time resolved photoluminescence in keV proton irradiated a-SiC:H alloysBaeri, A. et al. | 2000
- 431
-
Positron and positronium studies of irradiation-induced defects and microvoids in vitreous metamict silicaHasegawa, M. et al. | 2000
- 440
-
Implantation-induced structural changes and hydration in silicate glassesArnold, G.W. et al. | 2000
- 445
-
Evolution of nuclear glass structure under a-irradiationAbbas, A. et al. | 2000
- 451
-
Self-trapped excitons in quartzSong, Jakyoung et al. | 2000
- 459
-
Radiation compaction of porous Vycor glassKlaumünzer, S. et al. | 2000
- 465
-
Generation of a 7.4 mT ESR doublet induced by g rays in amorphous-SiO2Agnello, S. et al. | 2000
- 470
-
Kinetics of UV laser radiation defects in high performance glassesNatura, U. et al. | 2000
- 476
-
In-reactor luminescence from silica glassesYoshida, Tomoko et al. | 2000
- 483
-
XAFS study on silica glasses irradiated in a nuclear reactorYoshida, Tomoko et al. | 2000
- 490
-
Some effects of g-irradiation in soda-lime silicate glassesKowal, T.M. et al. | 2000
- 495
-
Bleaching and thermal recovery of PL emissions in natural silicaAgnello, S. et al. | 2000
- 500
-
Migration and segregation of sodium under b-irradiation in nuclear glassesBoizot, Bruno et al. | 2000
- 505
-
Magneto-optical investigations of radiation defects in cerium-doped fluorozirconate glassesSchweizer, S. et al. | 2000
- 508
-
Radiation damage in rare-earth and bromine-doped fluorozirconate glass ceramics as basis for novel X-ray storage phosphorsSchweizer, S. et al. | 2000
- 511
-
Ion beam-stimulated processes in glassesDeshkovskaya, A. et al. | 2000
- 517
-
Radiation-optical effects in glassy Ge-As(Sb)-S systemsShpotyuk, O.I. et al. | 2000
- 521
-
On the problem of electron-induced anisotropy effect in As2S3-based glassesBalitska, V.O. et al. | 2000
- 525
-
Radiation-induced effects in chalcogenide glasses: Topological mechanisms and applicationShpotyuk, O.I. et al. | 2000
- 529
-
Excitonic and electron-hole mechanisms of the creation of Frenkel defect in alkali halidesLushchik, A. et al. | 2000
- 538
-
High-energy argon ion bombardment of alkali iodides at low temperaturesPariselle, M.A. et al. | 2000
- 545
-
F centre production in CsI and CsI-Tl crystals under Kr ion irradiation at 15 KPopov, A.I. et al. | 2000
- 550
-
Effect of the void formation on the explosive fracture of electron irradiated NaCl crystalsVainshtein, D.I. et al. | 2000
- 556
-
Irradiation effects in LiF:Eu+3Kristianpoller, N. et al. | 2000
- 561
-
Effect of dose rate, temperature and impurity content on the radiation damage in the electron irradiated NaCl crystalsDubinko, V.I. et al. | 2000
- 568
-
Radiation defects in doped alkali halide microstructuresVâle, G. et al. | 2000
- 572
-
Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealingUmirzakov, B.E. et al. | 2000
- 577
-
The effect of pre-irradiation annealing on TL glow curves of LiF (Mg)Kozakiewicz, A.G. et al. | 2000
- 581
-
Scanning force microscopy of heavy-ion induced damage in lithium fluoride single-crystalsMüller, A. et al. | 2000
- 586
-
Exciton-created defects and their participation in energy transfer from excitons to Tl ions in KI-Tl crystalBerzina, B. et al. | 2000
- 592
-
Second harmonic generation from RE doped BGO waveguidesJazmati, A.K. et al. | 2000
- 597
-
Photoluminescence from RE doped BGO waveguidesJazmati, A.K. et al. | 2000
- 602
-
Ion induced modification of polymers at energies between 100 keV and 1 GeV applied for optical waveguides and improved metal adhesionRück, D.M. et al. | 2000
- 610
-
Ion-induced redistribution of palladium in polymethyl methacrylateFink, D. et al. | 2000
- 615
-
Diffusion and solubility of Au implanted into the AZ1350 photoresistSoares, M.R.F. et al. | 2000
- 621
-
Chemical modifications of ion irradiated polystyrene probed by optical absorption measurementsZhu, Zhiyong et al. | 2000
- 627
-
Properties of carbon films produced from polyimide by high-energy ion irradiationTerai, Takayuki et al. | 2000
- 632
-
Incorporation of chlorine in polymer films due to MeV proton bombardmentMenzel, N. et al. | 2000
- 637
-
Annealing behaviour of boron atoms implanted into polyethyleneterephtalateVacik, J. et al. | 2000
- 641
-
Chemical modifications in polyethylene terephthalate films induced by 35 MeV-u Ar ionsLiu, Changlong et al. | 2000
- 646
-
Modification of electrical properties of polymer membranes by ion implantationDworecki, K. et al. | 2000
- 650
-
Electrophysical properties of organic materials irradiated with accelerated ionsKomarov, F.F. et al. | 2000
- 655
-
Electrical properties of polyethylene modified by ion implantation and diffusionOdzhaev, V.B. et al. | 2000
- 660
-
Multistage ion implantation of polyamide-6 filmsPopok, V.N. et al. | 2000
- 664
-
High energy proton induced luminescence in F-doped polyvinyltolueneTorrisi, L. et al. | 2000
- 669
-
Transitory and permanent effects of electron beam irradiation on insulating materialsOproiu, C. et al. | 2000
- 676
-
XPS study of radiation-induced modification of poly(butene-1-sulfone): Dependence on the energy deposition mechanismIacona, Fabio et al. | 2000
- 682
-
The dynamics of ion expulsion in ultrashort pulse laser sputtering of Al2O3Stoian, R. et al. | 2000
- 691
-
Interaction of F2 excimer laser with SiO2 glasses: Towards the third generation of synthetic SiO2 glassesHosono, Hideo et al. | 2000
- 698
-
In situ diagnostics of pulse laser-induced defects in DUV transparent fused silica glassesMühlig, Ch et al. | 2000
- 704
-
On the role of laser-composite interaction in the Z-scan analysis of metal nanocluster glassesBattaglin, G. et al. | 2000
- 711
-
The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2Skuja, L. et al. | 2000
- 716
-
Ultrafast laser desorption from transparent insulatorsHenyk, M. et al. | 2000
- 722
-
Plasma and ion beam assisted metallization of polymers and their applicationKupfer, H. et al. | 2000
- 732
-
Modification and structuring of conducting polymer films on insulating substrates by ion beam treatmentAsmus, T. et al. | 2000
- 737
-
Effects of the ion-solid interaction in glow discharge vapour deposition polymerization of pyromellitic dianhydrideMaggioni, G. et al. | 2000
- 743
-
Ion implantation for photorefractive devices and optical emittersBuchal, Christoph et al. | 2000
- 750
-
Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3Sarkisov, S.S. et al. | 2000
- 758
-
The influence of the implantation sequence on the (SiC)1-x(AlN)x formationPezoldt, J. et al. | 2000
- 764
-
Broad-band active channels induced by electron beam lithography in LiF films for waveguiding devicesMontereali, R.M. et al. | 2000
- 771
-
Photosensitive point defects in optical glasses: Science and applicationsPotter, B.G. et al. | 2000
- 782
-
Study of albumin adsorption on ion beam irradiated polymer surfacesSatriano, C. et al. | 2000
- 788
-
Electron emission devices formed by energetic cluster impacts on TiO2 rutileThevenard, P. et al. | 2000
- 793
-
Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 filmsJiménez de Castro, M. et al. | 2000
- 798
-
Realisation of 50% quantum efficiency from photomultiplier cathodesHarmer, S. et al. | 2000
- 804
-
Laser oscillation by the F2+ and F2- color centers in LiF crystalsTsuboi, Taiju et al. | 2000
- 809
-
Ultrafast laser-induced index grating in transparent insulatorsSchneider, Th et al. | 2000
- 815
-
Neuron cell positioning on polystyrene in culture by silver-negative ion implantation and region control of neural outgrowthTsuji, Hiroshi et al. | 2000
- 820
-
Tissue-equivalent gel for non-invasive spatial radiation dose measurementsBero, M.A. et al. | 2000
- 826
-
Absorbed dose calculations for the Ignitor tokamak magnet coils insulatorRollet, S. et al. | 2000
- 831
-
Nanoparticle formation in silicate glasses by ion-beam-based methodsGonella, Francesco et al. | 2000
- 840
-
Metal nanocrystal formation in magnesium aluminate spinel and silicon dioxide with high-flux Cu- ionsKishimoto, N. et al. | 2000
- 845
-
Radiation induced nucleation of nanoparticles in silicaIla, D. et al. | 2000
- 851
-
The effect of ion-irradiation and annealing on the luminescence of Si nanocrystals in SiO2Cheylan, S. et al. | 2000
- 857
-
Formation of metal-alloy nanoclusters in silica by ion implantation and annealing in selected atmosphereBattaglin, G. et al. | 2000
- 864
-
Thermal stability of nanoparticles in silica glass implanted with high-flux Cu- ionsUmeda, N. et al. | 2000
- 871
-
On the stress state of silver nanoparticles in ion-implanted silicate glassesDubiel, M. et al. | 2000
- 877
-
Nonlinear optical properties of Cu nanoparticles embedded in insulators by high-current Cu- implantationTakeda, Y. et al. | 2000
- 882
-
Excimer laser annealing of glasses containing implanted metal nanoparticlesStepanov, A.L. et al. | 2000
- 887
-
Migration and assembly of transition metal atoms implanted in sapphire with a high doseKobayashi, Tomohiro et al. | 2000
- 892
-
Gold, silver and copper nanocrystal formation in SiC by MeV implantationZimmerman, R.L. et al. | 2000
- 897
-
Structural and magnetic properties of iron and cobalt implanted silicone polymersKhaibullin, R.I. et al. | 2000
- 903
-
Transient thermal processes in heavy ion irradiation of crystalline inorganic insulatorsToulemonde, M. et al. | 2000
- 913
-
Amorphization behaviors in polycrystalline alumina irradiated with energetic iodine ionsAruga, T. et al. | 2000
- 920
-
Swift heavy ion and fission damage effects in UO2Matzke, Hj et al. | 2000
- 927
-
Irradiation of a tin oxide nanometric powder with swift heavy ionsBerthelot, A. et al. | 2000
- 933
-
Application of the thermal spike model to latent tracks induced in polymersSzenes, G. et al. | 2000
- 938
-
Scanning force microscopy in a liquid on single latent ion tracks: Towards applications in polymers and atomic resolution on crystalsOhnesorge, F.M. et al. | 2000
- 944
-
Spectroscopic investigations on ion beam irradiated polycarbonatePuglisi, O. et al. | 2000
- 949
-
Tracks induced in TeO2 by heavy ions at low velocitiesSzenes, G. et al. | 2000
- 954
-
Formation of amorphous tracks in KTiOPO4 during swift heavy ion implantationOpfermann, Th et al. | 2000
- 959
-
Comparison of the structure and sizes of tracks induced by high-energy monatomic and cluster ions incident on the surface of micaVorobyova, I.V. et al. | 2000
- 964
-
Effects of swift heavy ions on the dielectric properties of doped and undoped ammonium dihydrogen phosphate crystalsBhat, A.P. et al. | 2000