Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition (Unknown)
- New search for: Niikura, C.
- New search for: Niikura, C.
- New search for: Guillet, J.
- New search for: Brenot, R.
- New search for: Equer, B.
- New search for: Bourée, J.E.
- New search for: Voz, C.
- New search for: Peiro, D.
- New search for: Asensi, J.M.
- New search for: Bertomeu, J.
- New search for: Andreu, J.
In:
Journal of non-crystalline solids
;
266
; 385-390
;
2000
-
ISSN:
- Article (Journal) / Print
-
Title:Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition
-
Contributors:Niikura, C. ( author ) / Guillet, J. / Brenot, R. / Equer, B. / Bourée, J.E. / Voz, C. / Peiro, D. / Asensi, J.M. / Bertomeu, J. / Andreu, J.
-
Published in:Journal of non-crystalline solids ; 266 ; 385-390
-
Publisher:
- New search for: North-Holland Publ. Co.
-
Place of publication:Amsterdam
-
Publication date:2000
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 51.45 / 51.60 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 266
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Spin-dependent processes in amorphous and microcrystalline silicon: a surveyStutzmann, Martin et al. | 2000
- 23
-
Surface reactions in very low temperature (<150(degree)C) hydrogenated amorphous silicon deposition, and applications to thin film transistorsParsons, Gregory N. et al. | 2000
- 31
-
Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon filmsCabarrocas, P.Roca i. et al. | 2000
- 38
-
Structural study of initial layer for (micro)c-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopyFujiwara, H. et al. | 2000
- 38
-
Structural study of initial layer for mc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopyFujiwara, H. / Toyoshima, Y. / Kondo, M. / Matsuda, A. et al. | 2000
- 43
-
Evolutionary phase diagrams for the deposition of silicon films from hydrogen-diluted silaneKoh, Joohyun et al. | 2000
- 48
-
In situ investigation of polymorphous silicon depositionMorral, A.Fontcuberta i. et al. | 2000
- 54
-
Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growthOkazaki, Yoshirou et al. | 2000
- 59
-
Surface-sensitive Raman scattering study on a-Si:H network formation process during deposition and H2 plasma annealingMiyazaki, Seiichi et al. | 2000
- 64
-
In situ observation of low temperature growth of crystalline silicon using reflection high-energy electron diffractionKitagawa, T. et al. | 2000
- 69
-
Nucleation and growth analysis of microcrystalline silicon by scanning probe microscopy: substrate dependence, local structural and electronic properties of as-grown surfacesRoss, Ch et al. | 2000
- 74
-
Experimental evidence for an inhomogeneous surface dangling bond limited growth mechanism in a-Si:HFlewitt, A.J. et al. | 2000
- 79
-
Growth mechanism of hydrogenated amorphous siliconRobertson, John et al. | 2000
- 84
-
High rate growth of microcrystalline silicon at low temperaturesKondo, Michio et al. | 2000
- 90
-
Guiding principles for obtaining stabilized amorphous silicon at larger growth ratesTakai, M. et al. | 2000
- 95
-
Investigation of growth mechanisms of microcrystalline silicon in the very high frequency rangeTerasa, R. et al. | 2000
- 100
-
Transport mechanism of deposition precursors in catalytic chemical vapor deposition studied using a reactor tubeHonda, Namiko et al. | 2000
- 105
-
Comparison of gas-phase reactions in low-temperature growth of Si films by photochemical vapor deposition and the hot wire cell methodAbe, Katsuya et al. | 2000
- 110
-
Low substrate temperature deposition of amorphous and microcrystalline silicon films on plastic substrates by hot-wire chemical vapor depositionAlpuim, P. et al. | 2000
- 115
-
Some indications of different film forming radicals in a-Si:H deposition by the glow discharge and thermocatalytic CVD processesSchröder, B. et al. | 2000
- 120
-
Structural properties of polycrystalline silicon films having varied textures fabricated with intentional control of surface reactions using SiF4-H2-SiH4 mixing gasKamiya, T. et al. | 2000
- 125
-
Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilutionVallat-Sauvain, E. et al. | 2000
- 131
-
Growth kinetics of nanocrystalline silicon from SiH2Cl2 by plasma-enhanced chemical vapor depositionShirai, Hajime et al. | 2000
- 136
-
Novel deposition technique of Er-doped a-Si:H combining catalytic chemical vapor deposition and pulsed laser-ablationMasuda, Atsushi et al. | 2000
- 141
-
High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline siliconRogel, R. et al. | 2000
- 146
-
Post hydrogenation of sputtered amorphous silicon by pressurized water boilingSakamoto, Naomichi et al. | 2000
- 150
-
Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor modelsTreacy, M. M. / Voyles, P. M. / Gibson, J. M. et al. | 2000
- 150
-
Schläfli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor modelsTreacy, M.M.J. et al. | 2000
- 156
-
Computer simulation of low-energy excitations in amorphous silicon with voidsNakhmanson, Serge M. et al. | 2000
- 161
-
Softening of elastic moduli of amorphous semiconductorsMathioudakis, C. et al. | 2000
- 166
-
The splitting of absorption bands in IR spectra of anisotropic SiH monolayers covering the internal surfaces in (micro)c-Si:HStryahilev, D. et al. | 2000
- 166
-
The splitting of absorption bands in IR spectra of anisotropic SiH monolayers covering the internal surfaces in mc-Si:HStryahilev, D. / Diehl, F. / Schroder, B. et al. | 2000
- 171
-
Structural study of p-type (micro)c-Si layer for solar cell applicationSasaki, Toshiaki et al. | 2000
- 171
-
Structural study of p-type mc-Si layer for solar cell applicationSasaki, T. / Fujikake, S. / Tabuchi, K. / Yoshida, T. / Hama, T. / Sakai, H. / Ichikawa, Y. et al. | 2000
- 176
-
Isotopic effect between hydrogen and deuterium emission in siliconBiswas, R. et al. | 2000
- 180
-
Ultrafast infrared experiments on Si-H vibrations in a-Si:HVan der Voort, M. et al. | 2000
- 185
-
Microstructure and dynamics of hydrogen in a-Si:H detected by nuclear magnetic resonanceBaugh, Jonathan et al. | 2000
- 190
-
Hydrogen at compact sites in hot-wire chemical vapour deposited polycrystalline silicon filmsRath, J.K. et al. | 2000
- 195
-
Molecular hydrogen in amorphous silicon revisitedSu, Tining et al. | 2000
- 201
-
Characterization and role of hydrogen in nc-Si:HItoh, T. et al. | 2000
- 206
-
Comparative study of hydrogen stability in hydrogenated amorphous and crystalline siliconBeyer, W. et al. | 2000
- 211
-
Anderson transition and thermal effects on electron states in amorphous siliconDrabold, D.A. et al. | 2000
- 218
-
A molecular dynamics study of the structure of band tails in a-Si:HFedders, Peter A. et al. | 2000
- 223
-
Percolation-controlled electronic properties in microcrystalline silicon: effective medium approachShimakawa, K. et al. | 2000
- 227
-
Charge modulation spectra in phosphorus-doped a-Si:HLyou, J. et al. | 2000
- 232
-
Generation-recombination noise studied in hydrogenated amorphous siliconVerleg, P.A.W.E. et al. | 2000
- 237
-
Noise-detected magnetic resonance experiments in amorphous hydrogenated siliconGoennenwein, S.T.B. et al. | 2000
- 242
-
1-f Noise in doped and undoped amorphous siliconJohanson, Robert E. et al. | 2000
- 247
-
Space charges resulting from photocurrents exceeding the thermionic emission currents in a-Si:HSpanakis, E. et al. | 2000
- 253
-
Structural and electronic properties of optimized a-Si:H filmsLubianiker, Yoram et al. | 2000
- 258
-
Electronic properties of silicon thin films prepared by hot-wire chemical vapour depositionBrüggemann, R. et al. | 2000
- 263
-
Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150(degree)CButté, R. et al. | 2000
- 269
-
Modeling the dielectric functions of silicon-based films in the amorphous, nanocrystalline and microcrystalline regimesFerlauto, A.S. et al. | 2000
- 274
-
Optical and electronic properties of microcrystalline silicon deposited by hot-wire chemical vapor depositionHan, Daxing et al. | 2000
- 279
-
Optics of textured amorphous silicon surfacesRovira, P.I. et al. | 2000
- 284
-
Light trapping by formation of nanometer diameter wire-like structures on (micro)c-Si thin filmsRappich, J. et al. | 2000
- 284
-
Light trapping by formation of nanometer diameter wire-like structures on mc-Si thin filmsRappich, J. / Lust, S. / Sieber, I. / Henrion, W. / Dohrmann, J. K. / Fuhs, W. et al. | 2000
- 290
-
New results on the modulated photocarrier grating techniqueMorgado, E. et al. | 2000
- 294
-
The effect of spatial disorder on the mobility of charge carriers hopping through energetically disordered dipolar latticesGoldie, D.M. et al. | 2000
- 299
-
Dispersive transient current due to hopping at band edge fluctuating with self-affine fractal dimensionMurayama, Kazuro et al. | 2000
- 304
-
Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniquesGünes, Mehmet et al. | 2000
- 309
-
Local electronic transport in microcrystalline silicon observed by combined atomic force microscopyFejfar, A. et al. | 2000
- 315
-
Local photoconductivity correlation with granular structure of microcrystalline silicon thin filmsRezek, B. et al. | 2000
- 319
-
Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous siliconDroz, C. et al. | 2000
- 325
-
Anisotropy in the transport of microcrystalline siliconUnold, T. et al. | 2000
- 331
-
New method of drift mobility evaluation in mc-Si:H, basic idea and comparison with time-of-flightJuska, G. / Genevicius, K. / Viliunas, M. / Arlauskas, K. / Stuchlikova, H. / Fejfar, A. / Kocka, J. et al. | 2000
- 331
-
New method of drift mobility evaluation in (micro)c-Si:H, basic idea and comparison with time-of-flightJuska, G. et al. | 2000
- 336
-
Measurement of transversal ambipolar diffusion coefficient in microcrystalline siliconBrenot, R. et al. | 2000
- 341
-
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gasNakahata, K. et al. | 2000
- 347
-
The change of transport mechanism in (micro)c-Si:H films induced by H2-diluted silane plasmaHuang, Shaoyun et al. | 2000
- 347
-
The change of transport mechanism in mc-Si:H films induced by H2-diluted silane plasmaHuang, S. / Wang, L. / Ganguly, G. / Xu, J. / Huang, X. / Matsuda, A. / Chen, K. et al. | 2000
- 352
-
Frequency-resolved drift mobility in a-Si:HHattori, K. et al. | 2000
- 357
-
Transient thermal gratings and carrier-induced gratings in diffusion experimentsNiehus, M. et al. | 2000
- 362
-
Interpreting transient photocurrents as a signature of the density of states distribution: the profound importance of the short-time decayGrabtchak, S. et al. | 2000
- 367
-
Improvement of energy resolution of transient photoconductivity analysis for measuring localized-state distributions in amorphous semiconductorsOgawa, Nobuyuki et al. | 2000
- 372
-
Recombination kinetics of long-lived carriers in a-Si:H at low temperaturesSchultz, N. et al. | 2000
- 376
-
Numerical simulation of low-field thermally stimulated conductivity in a-Si:HSmai͏̈l, T. et al. | 2000
- 380
-
High hole drift mobility in a-Si:H deposited at high growth rates for solar cell applicationKorevaar, B.A. et al. | 2000
- 385
-
Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor depositionNiikura, C. et al. | 2000
- 391
-
The hydrogen collision model: theory and experimentBranz, Howard M. et al. | 2000
- 397
-
Long-range disorder and metastability in amorphous siliconQuicker, D. et al. | 2000
- 401
-
Metastability in amorphous silicon from hydrogen flipsBiswas, R. et al. | 2000
- 405
-
A study of light-induced degradation of a-Si:H by nanosecond laser pulse pairs of variable delayStradins, P. et al. | 2000
- 410
-
Model of the light-induced creation of two types of dangling bonds in a-Si:HMorigaki, K. et al. | 2000
- 415
-
Hydrogen-mediated models for metastability in a-Si:H: role of dihydride bondingKopidakis, N. et al. | 2000
- 419
-
Kinetics of defects and electron, hole diffusion lengths during light soaking and consequent annealingAbramov, A.S. et al. | 2000
- 423
-
Charge-trapping metastability in doped hydrogenated amorphous siliconCrandall, Richard S. et al. | 2000
- 428
-
Effect of hole accumulation on photodegradation in a-Si:HImagawa, K. et al. | 2000
- 432
-
Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloysLau, S.P. et al. | 2000
- 437
-
Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision modelYelon, Arthur et al. | 2000
- 444
-
Persistent excited conductivity and the threshold fluence in a-Si:H under 17 MeV proton irradiationAmekura, H. et al. | 2000
- 450
-
Amorphous silicon deposited at high growth rates near the onset of microcrystallinityLubianiker, Yoram et al. | 2000
- 455
-
Hindering the light-induced instability in a-Si:H by hydrogen clustersYoon, Jong-Hwan et al. | 2000
- 459
-
Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation modelWehrspohn, R.B. et al. | 2000
- 464
-
Metastability of hot-wire amorphous-silicon thin-film transistorsStannowski, B. et al. | 2000
- 469
-
Influence of variation of lithium concentration on metastabilities in a-Si:H(Li)Agarwal, Pratima et al. | 2000
- 474
-
The light-induced metastable lattice expansion in hydrogenated amorphous siliconNonomura, Shuichi et al. | 2000
- 481
-
A study on the correlation between the photoinduced volume expansion and the internal stress in hydrogenated amorphous siliconSakamoto, T. et al. | 2000
- 486
-
Photoinduced structural change and restoration of hydrogenated amorphous siliconShimizu, K. et al. | 2000
- 491
-
Light-induced, reversible, above-gap, optical changes in hydrogenated amorphous silicon filmsHata, N. et al. | 2000
- 496
-
The effect of light soaking on the structural order in a-Si:HGupta, S. et al. | 2000
- 501
-
Low temperature internal friction study of light-induced structural instability in hydrogenated amorphous siliconLiu, Xiao et al. | 2000
- 506
-
Stress and internal friction associated with light-induced structural changes of a-Si:H deposited on crystalline silicon microcantileversStratakis, E. et al. | 2000
- 511
-
Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurementsFinger, F. et al. | 2000
- 519
-
Electron spin resonance and optical characterization of defects in microcrystalline siliconVanecek, M. et al. | 2000
- 524
-
Identification of non-radiative recombination paths in microcrystalline silicon ((micro)c-Si:H)Kanschat, P. et al. | 2000
- 524
-
Identification of non-radiative recombination paths in microcrystalline silicon (mc-Si:H)Kanschat, P. / Lips, K. / Fuhs, W. et al. | 2000
- 529
-
Creation and annihilation mechanism of dangling bonds within the a-Si:H growth surface studied by in situ ESR techniqueYamasaki, Satoshi et al. | 2000
- 534
-
Standard and electrically detected magnetic resonance in nanocrystalline siliconBronner, W. et al. | 2000
- 540
-
Multi-band electron paramagnetic resonance study of the defects in microcrystalline siliconEhara, Takashi et al. | 2000
- 544
-
Microscopic structure of defects in microcrystalline siliconKondo, M. et al. | 2000
- 548
-
Clustered defects in hot wire chemical vapor deposited poly-silicon filmsRath, J.K. et al. | 2000
- 553
-
Defect re-distribution in amorphous silicon below equilibration temperaturevan Swaaij, R.A.C.M.M. et al. | 2000
- 558
-
Spatial distribution of dangling bonds in undoped hydrogenated amorphous silicon observed by solid-state voltcoulometryNádazdy, V. et al. | 2000
- 565
-
On the relation between defect density and dopant concentration in amorphous silicon filmsCaputo, Domenico et al. | 2000
- 569
-
Mid-gap states measurements of low-level boron-doped a-Si:H filmsTheil, Jeremy et al. | 2000
- 574
-
Lifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based filmsOgihara, C. et al. | 2000
- 578
-
Selective dominance of photoluminescence lifetime in a-Si:H-based alloysOheda, Hidetoshi et al. | 2000
- 583
-
Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour depositionLuterová, K. et al. | 2000
- 588
-
Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloysGiorgis, F. et al. | 2000
- 593
-
Fundamental gap of luminescent nanocrystalline silicon thin filmToyama, Toshihiko et al. | 2000
- 598
-
Evolution of the Er environment in a-Si:H under annealing: ion implantation versus co-depositionTessler, L.R. et al. | 2000
- 603
-
Optimization of the as-deposited 1.54 (micro)m photoluminescence intensity in a-SiOx:HTessler, Leandro R. et al. | 2000
- 603
-
Optimization of the as-deposited 1.54 mm photoluminescence intensity in a-SiOx:HErTessler, L. R. / Iniguez, A. C. et al. | 2000
- 608
-
Room temperature luminescence of Er doped nc-Si-SiO2 superlatticesZacharias, M. et al. | 2000
- 614
-
Erbium incorporation in plasma-deposited amorphous siliconTerukov, E.I. et al. | 2000
- 619
-
Mechanism of low-temperature crystallization of amorphous silicon by atomic hydrogen annealHeya, Akira et al. | 2000
- 624
-
Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transitionSummonte, C. et al. | 2000
- 630
-
The structure of 1.5-2.0 eV band gap amorphous silicon films prepared by chemical annealingFutako, Wataru et al. | 2000
- 635
-
Changes of hydrogen evolution thermodynamics induced by He and H2 dilution in PECVD a-Si:H films: influence on thermal crystallizationdelli Veneri, P. et al. | 2000
- 640
-
Extraordinary crystallization of amorphous Si-SiO2 superlatticesZacharias, M. et al. | 2000
- 645
-
Two-step laser recrystallization of poly-Si for effective control of grain boundariesJeon, Jae-Hong et al. | 2000
- 650
-
Interference laser crystallization of microcrystalline silicon using asymmetric beam intensitiesRezek, B. et al. | 2000
- 654
-
In situ and ex situ diagnostics on melting and resolidification dynamics of amorphous and polycrystalline silicon thin films during excimer laser annealingHatano, Mutsuko et al. | 2000
- 659
-
The role of hydrogen in the process of successive laser crystallization of hydrogenated amorphous siliconLengsfeld, P. et al. | 2000
- 665
-
Defect bands in a-Si-Ge:H alloys with low Ge contentPalinginis, Kimon C. et al. | 2000
- 670
-
Segregation, clustering, and suppression of phase separation in amorphous silicon-germanium alloysTzoumanekas, C. et al. | 2000
- 675
-
Influence of plasma chemistry on the properties of a-(Si,Ge):H alloysDalal, Vikram L. et al. | 2000
- 680
-
Techniques for measuring the composition of hydrogenated amorphous silicon-germanium alloysNelson, Brent P. et al. | 2000
- 685
-
Growth of microcrystalline Si and (Si, Ge) on plastic substratesErickson, Karl et al. | 2000
- 689
-
Crystallization of amorphous silicon-germanium films deposited by low pressure chemical vapor depositionGuillet, D. et al. | 2000
- 694
-
Transport properties of amorphous hydrogenated silicon-carbon alloysSchmidt, J.A. et al. | 2000
- 699
-
p-Type doping in a-Si1-xCx:H obtained by PECVDCarreño, M.N.P. et al. | 2000
- 704
-
PECVD a-SiC:H thin films from liquid organosilanes dependence of photoluminescence on starting materialSeekamp, J. et al. | 2000
- 708
-
Optical properties of large band gap Se- and S-doped amorphous hydrogenated siliconMehra, R.M. et al. | 2000
- 713
-
Compact hydrogenated amorphous germanium films by ion-beam sputtering depositionComedi, D. et al. | 2000
- 717
-
Optically excited paramagnetic centers in hydrogenated amorphous germaniumMarques, F.C. et al. | 2000
- 721
-
Photoluminescence in high-quality a-Ge:HIshii, S. et al. | 2000
- 726
-
Local coordination and electronic doping of column III metals in hydrogenated amorphous germaniumChambouleyron, I. et al. | 2000
- 730
-
Temperature dependence of the photoconductivity of gallium-doped hydrogenated amorphous germanium filmsReis, F.T. et al. | 2000
- 735
-
Photocreation processes for neutral dangling bonds in a-Ge-N:H compared with a-Si-N:HKumeda, Minoru et al. | 2000
- 740
-
Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamicsHaerle, Rainer et al. | 2000
- 746
-
Growth of amorphous semiconductors: tight-binding molecular dynamics studyKohary, K. et al. | 2000
- 750
-
Influence of disorder on the density of p and s states in hydrogenated amorphous carbonParet, Valérie et al. | 2000
- 750
-
Influence of disorder on the density of p and states in hydrogenated amorphous carbonParet, V. / Theye, M. L. et al. | 2000
- 755
-
X-ray diffraction investigation of polymer-like hydrogenated amorphous carbon filmsBouchet-Fabre, B. et al. | 2000
- 760
-
Stress variations near surfaces in diamond-like amorphous carbonFyta, M. et al. | 2000
- 765
-
Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivityFerrari, A.C. et al. | 2000
- 769
-
Novel luminescence properties of a-C:H films produced by using an organic source at various substrate temperaturesXu, Jun et al. | 2000
- 773
-
Time-resolved study of photoluminescence polarization in a-C:H filmsBerberan-Santos, M.N. et al. | 2000
- 778
-
Optical properties of sputtered hydrogenated amorphous carbonPopescu, B. et al. | 2000
- 783
-
Comparative study of the effect of thermal annealing on the hydrogen stability and the stress in a-C:H films deposited by electron cyclotron resonance glow discharge and direct current multipolar plasma methodsBenlahsen, M. et al. | 2000
- 788
-
Properties and electron field emission of highly resistive and transparent polymer-like a-C:HSaito, K. et al. | 2000
- 793
-
Photoconductivity and photoluminescence processes in amorphous carbonIlie, A. et al. | 2000
- 797
-
Temperature dependence of electron spin resonance in fluorinated amorphous carbon filmsYokomichi, Haruo et al. | 2000
- 803
-
Hydrogen incorporation and its structural effect on a-C:H films deposited by magnetron sputteringPopescu, B. et al. | 2000
- 808
-
Electronic and structural properties of amorphous carbon-nitrogen alloysAlvarez, F. et al. | 2000
- 815
-
Structural modifications of hydrogenated amorphous carbon nitride due to ultraviolet light irradiation and thermal annealingZhang, Mei et al. | 2000
- 821
-
Photoluminescence in low defect density a-C:H and a-C:H:NAnguita, J.V. et al. | 2000
- 825
-
Structural stability for UV irradiation and dielectric properties of a-CNx filmsItoh, T. et al. | 2000
- 830
-
Diffusion of 71Ge in the amorphous ceramic Si28C36N36Matics, Stefan et al. | 2000
- 835
-
Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin filmsLenahan, P.M. et al. | 2000
- 840
-
Thermal stability of p-type doped amorphous silicon suboxidesJanssen, R. et al. | 2000
- 845
-
Infrared absorption and hydrogen effusion of hydrogenated amorphous silicon-oxide filmsBeyer, W. et al. | 2000
- 850
-
The vibrational local modes of the metastable threefold coordinated oxygen in hydrogenated amorphous silicon oxideLin, Shu-Ya et al. | 2000
- 854
-
Infrared photoluminescence from Er-doped a-GaAsN alloysZanatta, A.R. et al. | 2000
- 859
-
Self-organization in network glassesThorpe, M.F. et al. | 2000
- 867
-
Glass formation in the Ge-Se-AgI ternaryBoev, Victor et al. | 2000
- 872
-
Raman-spectroscopy studies on rigidity percolation and fragility in Ge-(S,Se) glassesWang, Yong et al. | 2000
- 876
-
Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorptionBishop, S.G. et al. | 2000
- 884
-
Experimental evidence for long-range potential fluctuations in a-Se filmsEmelianova, E.V. et al. | 2000
- 889
-
Sub-gap excitation effects in As2S3 glassTanaka, Keiji et al. | 2000
- 894
-
Dynamics of band tail holes in amorphous As2Se3: direct measurement of hopping relaxation timeOhno, T. et al. | 2000
- 898
-
The electronic structure of Cu-modified arsenic chalcogenidesAdriaenssens, G.J. et al. | 2000
- 904
-
Effect of thermal annealing on dynamics of photoluminescence in a-GeSe2 filmsWang, Yong et al. | 2000
- 908
-
Temperature dependence of photoluminescence intensity and decay in GeSe2 glassMatsuda, Osamu et al. | 2000
- 913
-
Fabrication of photonic band gap structures in As40S60 by focused ion beam millingDale, G. et al. | 2000
- 919
-
In situ measurements of photo-induced volume changes in amorphous chalcogenide filmsGanjoo, Ashtosh et al. | 2000
- 924
-
Raman study of ion irradiated GeSe filmsDwivedi, P.K. et al. | 2000
- 929
-
Photodarkening in glassy As2S3Hari, P. et al. | 2000
- 933
-
Annealing time and temperature dependence for photo-induced crystallization in amorphous GeSe2Sakai, K. et al. | 2000
- 938
-
Anisotropic structural change induced by sub-bandgap lights in As-S glasses studied by low-frequency Raman scatteringMatsuishi, Kiyoto et al. | 2000
- 944
-
Photoinduced anisotropy in the ion-conducting amorphous semiconductor Ag-As-SGotoh, T. et al. | 2000
- 948
-
Influence of temperature, light intensity and electrical field on the photoinduced dichroism in chalcogenide thin filmsHertogen, P. et al. | 2000
- 954
-
A model of photoinduced anisotropy in chalcogenide glassesEmelianova, E.V. et al. | 2000
- 959
-
Is there avalanche multiplication in amorphous semiconductors?Arkhipov, V.I. et al. | 2000
- 964
-
Structure and imaging properties of As40S60-xSex glassesVlcek, M. et al. | 2000
- 969
-
Si-Te acousto-optic modulator for the 1.7-10.6 mm IR regionKulakova, L. A. / Matveev, B. A. / Melekh, B. T. et al. | 2000
- 969
-
Si-Te acousto-optic modulator for the 1.7-10.6 (micro)m IR regionKulakova, L.A. et al. | 2000
- 973
-
Application of As40S60-xSex layers for high-efficiency grating productionStronski, A.V. et al. | 2000
- 979
-
Photo-induced dissolution effect in Ag-As33S67 multilayer structures and its potential applicationWagner, T. et al. | 2000
- 985
-
Copper-doped vacuum evaporated chalcogenide layers as sensitive ion-selective membranesTomova, R. et al. | 2000
- 989
-
Luminescence in plasma polysilylenes prepared from organosilanesHorvath, P. et al. | 2000
- 994
-
A comparative study of photoconductivity and carrier transport in oligomeric filmsReynolds, S. et al. | 2000
- 999
-
Organic phthalocyanine films with high mobilities for efficient field-effect transistor switchesSchauer, F. et al. | 2000
- 1004
-
Fabrication of nanometer sized Si dot multilayers and their photoluminescence propertiesHirano, Y. et al. | 2000
- 1009
-
Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processingWolfe, D.M. et al. | 2000
- 1015
-
Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H-a-SiNx:H multilayersHuang, Xinfan et al. | 2000
- 1021
-
Three-dimensional array of silicon nanoscale elements in artificial SiO2 opal hostBogomolov, V.N. et al. | 2000
- 1025
-
Crystallization and oxidation process of nc-Ge in a-SiO2 matrix from a-Si:H-a-Ge:H multilayersHe, Zhenhong et al. | 2000
- 1029
-
A comparative study of the photoluminescence properties of a-SiOx:H film and silicon nanocrystallitesUmezu, I. et al. | 2000
- 1033
-
Defects and transport in a-Si:H-c-Si heterojunctionsUnold, T. et al. | 2000
- 1038
-
Photoelectron spectroscopy studies of microcrystalline-amorphous silicon interfacesBöhmer, E. et al. | 2000
- 1044
-
Amorphous-porous heterojunction on thin microcrystalline siliconRubino, Alfredo et al. | 2000
- 1049
-
Study of a-Si:H emitters for efficient carrier injection in GaAs bipolar devicesDella Corte, F.G. et al. | 2000
- 1054
-
Investigation of durability of Cr-p+a-Si:H-V film memory devicesHu, J. et al. | 2000
- 1058
-
DC and ac measurements on metal-a-Si:H-metal room temperature quantised resistance devicesHajto, J. et al. | 2000
- 1062
-
a-SiN:H multilayer versus bulk structure: a real improvement of radiative efficiency?Rizzoli, R. et al. | 2000
- 1067
-
Luminescence and absorption edge of a-Ge:H well layers in a-Si:H-a-Ge:H multilayersNakata, H. et al. | 2000
- 1072
-
Thermalization gap of a-Si:H well layer in a-Si:H-a-Si3N4:H multilayersMurayama, K. et al. | 2000
- 1077
-
Defect band distributions in hydrogenated tetrahedral amorphous carbon-crystalline silicon heterostructuresPalinginis, Kimon C. et al. | 2000
- 1082
-
Thin film Si solar cell fabricated at low temperatureYamamoto, Kenji et al. | 2000
- 1088
-
Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gasRo, K. et al. | 2000
- 1094
-
Improvement of a-Si:H device stability and performances by proper design of the interfacesMartins, R. et al. | 2000
- 1099
-
Hydrogenated microcrystalline silicon: how to correlate layer properties and solar cell performanceWyrsch, N. et al. | 2000
- 1104
-
Investigation of the optoelectronic properties of mc-Si:H pin solar cellsStiebig, H. / Brammer, T. / Zimmer, J. / Vetterl, O. / Wagner, H. et al. | 2000
- 1104
-
Investigation of the optoelectronic properties of (micro)c-Si:H pin solar cellsStiebig, H. et al. | 2000
- 1109
-
Spatially resolved photocurrent measurements of microstructured a-Si:H solar cellsEisele, C. et al. | 2000
- 1114
-
Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si:H solar cellsHof, Ch et al. | 2000
- 1119
-
Electro- and photo-luminescence spectra from a-Si:H and a-SiGe p-i-n solar cellsYue, Guozhen et al. | 2000
- 1124
-
Identification of transport and recombination paths in homo- and heterojunction silicon solar cells by electrically detected magnetic resonanceMüller, R. et al. | 2000
- 1129
-
Effect of oxide treatment at the microcrystalline tunnel junction of a-Si:H-a-Si:H tandem cellsRath, J.K. et al. | 2000
- 1134
-
Optimizing phosphorous and boron doped layers for stable p-i-n solar cellsPoissant, Y. et al. | 2000
- 1140
-
Approaches for large-area a-SiC:H photovoltaic-powered electrochromic window coatingsGao, Wei et al. | 2000
- 1145
-
Imagers using amorphous silicon thin film on application specific integrated circuit technologyBöhm, Markus et al. | 2000
- 1152
-
Requirements on amorphous semiconductors for medical X-ray detectorsHoheisel, Martin et al. | 2000
- 1158
-
Multi-channel sensors with reduced metameric errorsKnipp, D. et al. | 2000
- 1163
-
Properties of a-Se for use in flat panel X-ray image detectorsKasap, Safa O. et al. | 2000
- 1168
-
a-Si:H color imagers and colorimetryRieve, P. et al. | 2000
- 1173
-
Thin film detector for color recognition: an experimental and numerical studyZimmer, J. et al. | 2000
- 1178
-
Transient properties of PINIP structures in three-terminal a-Si:H based three-color detectorsTopic, Marko et al. | 2000
- 1183
-
Optical modelling of a-Si:H-based three-terminal three-colour detectorsKrc, Janez et al. | 2000
- 1188
-
Noise analysis of imagers with a-Si:H pin diode pixelsBlecher, F. et al. | 2000
- 1193
-
Noise model of a-Si:H IR photodetectorsCaputo, Domenico et al. | 2000
- 1198
-
Modeling of effects of material quality on fast characterization of state-of-the-art a-Si:H p+-i-n+ diodesLemmi, F. et al. | 2000
- 1203
-
Lateral conduction in structured amorphous silicon p+-i-n+ photodiodesLemmi, F. et al. | 2000
- 1208
-
Amorphous silicon photodetector for optical interconnectionsGaede, Rhonda et al. | 2000
- 1213
-
New ultra-light flexible large area thin film position sensitive detector based on amorphous siliconFortunato, E. et al. | 2000
- 1218
-
Amorphous silicon p-i-n on p crystalline silicon photodetector in the visible and near infrared spectrumTucci, Mario et al. | 2000
- 1223
-
A three-path model for visible/near infrared mc-Si:H p-i-n detectorsVieira, M. / Fantoni, A. / Fernandes, M. / Schwarz, R. et al. | 2000
- 1223
-
A three-path model for visible-near infrared (micro)c-Si:H p-i-n detectorsVieira, M. et al. | 2000
- 1228
-
Image processing in a mc-Si:H p-i-n image transducerSousa, F. / Martins, J. / Fernandes, M. / Macarico, A. / Schwarz, R. / Vieira, M. et al. | 2000
- 1228
-
Image processing in a (micro)c-Si:H p-i-n image transducerSousa, F. et al. | 2000
- 1233
-
Novel electrochromic projection and writing device incorporating an amorphous silicon carbide photodiodeGao, Wei et al. | 2000
- 1238
-
Optical link for digital transmissions using porous silicon light emitting diodeBalucani, M. et al. | 2000
- 1241
-
Amorphous photocoupler consisting of a-SiC:H thin film light emitting diode and a-SiGe:H thin film photodiodeKruangam, D. et al. | 2000
- 1247
-
Fast infrared light modulation in a-Si:H micro-devices for fiber-to-the-home applicationsCocorullo, G. et al. | 2000
- 1252
-
Pulsed laser crystallization and doping for thin film transistorsMei, P. et al. | 2000
- 1260
-
Microcrystalline silicon with high electron field-effect mobility deposited at 230(degree)CMulato, M. et al. | 2000
- 1265
-
Performance improvement of polycrystalline thin-film transistor by adopting a very thin amorphous silicon bufferKim, Kyung Wook et al. | 2000
- 1270
-
Low temperature amorphous silicon channel material for polysilicon thin film transistorsFulks, R.T. et al. | 2000
- 1274
-
p Channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320(degree)CChen, Y. et al. | 2000
- 1279
-
Density of states in the channel material of low temperature polycrystalline silicon thin film transistorsMourgues, K. et al. | 2000
- 1284
-
High-performance polysilicon thin film transistors on steel substratesWu, Ming et al. | 2000