4 MeV electron irradiation effect on electroluminesencence from Au-SiO2-p-Si and Au-Si-rich SiO2-p-Si structures (English)
- New search for: Ran, G.Z.
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In:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
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173
, 3
; 299-303
;
2001
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ISSN:
- Article (Journal) / Print
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Title:4 MeV electron irradiation effect on electroluminesencence from Au-SiO2-p-Si and Au-Si-rich SiO2-p-Si structures
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Contributors:
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Published in:
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2001
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 535/3450
- New search for: 33.00
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Source:
Table of contents – Volume 173, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 269
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L2 sub-shell Coster-Kronig yield at Z=76 and 81Simsek, Önder et al. | 2001
- 275
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Equilibrium charge-state distributions of sodium ions in carbon foilTordoir, X. et al. | 2001
- 281
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Secondary-electron yield from Au induced by highly charged Ta ionsKrása, J. et al. | 2001
- 287
-
Electrical and optical properties of boron and nitrogen implanted In2O3 thin filmsHanamoto, K. et al. | 2001
- 292
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Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantationWu, Yuguang et al. | 2001
- 299
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4 MeV electron irradiation effect on electroluminesencence from Au-SiO2-p-Si and Au-Si-rich SiO2-p-Si structuresRan, G.Z. et al. | 2001
- 304
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Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argonHo, H.P. et al. | 2001
- 311
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Influence of irradiation of poly-(ethylene terephthalate) films with X-rays upon the rate of dissolution in alkali water solutionNazmov, V.P. et al. | 2001
- 319
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Defect structure of erbium-doped 111 silicon layers formed by solid phase epitaxyKyutt, R. N. / Sobolev, N. A. / Nikolaev, Y. A. / Vdovin, V. I. et al. | 2001
- 319
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Defect structure of erbium-doped <111> silicon layers formed by solid phase epitaxyKyutt, R.N. et al. | 2001
- 326
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Radiothermoluminescence sensitisation by dissolved oxygen in fluoropolymersSmolyanskii, A.S. et al. | 2001
- 332
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Improved electron transport mechanics in the PENELOPE Monte-Carlo modelBielajew, A.F. et al. | 2001
- 344
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Structure analysis of Pd(110) surface by computer simulation of NICISSTakeuchi, Wataru et al. | 2001
- 351
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X-ray and ion beam investigation of alumina coatings applied on DIN1.4914 martensitic steelIordanova, I. et al. | 2001
- 359
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Effect of electron beam divergence on the width of spectral peaks in single-mode interfered transition radiationYamada, Koji et al. | 2001
- 370
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Non-uniform 3He polarization formed by multiple collisions of a fast 3He+ ion with polarized Rb vapor in a strong magnetic fieldArimoto, Y. et al. | 2001
- 383
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Waveform generator for monochromatic, circularly polarized Mossbauer g-radiationSzymanski, K. / Dobrzynski, L. et al. | 2001
- 383
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Waveform generator for monochromatic, circularly polarized Mössbauer g-radiationSzymanski, K. et al. | 2001