Energy spectra of field emission electrons from a W<310> tip (English)
- New search for: Ogawa, H.
- New search for: Ogawa, H.
- New search for: Arai, N.
- New search for: Nagaoka, K.
- New search for: Uchiyama, S.
- New search for: Yamashita, T.
- New search for: Itoh, H.
- New search for: Oshima, C.
In:
Surface science
;
357
; 371-375
;
1996
-
ISSN:
- Article (Journal) / Print
-
Title:Energy spectra of field emission electrons from a W<310> tip
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Contributors:Ogawa, H. ( author ) / Arai, N. / Nagaoka, K. / Uchiyama, S. / Yamashita, T. / Itoh, H. / Oshima, C.
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Published in:Surface science ; 357 ; 371-375
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam
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Publication date:1996
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ISSN:
-
ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 33.68 / 35.00 / 33.00
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Classification:
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Source:
Table of contents – Volume 357
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Recent advances in LEED surface crystallographyHeinz, K. et al. | 1996
- 10
-
Hybrid surface structures formed on Cu(001) and Ag(001) by alkali-metal adsorptionTochihara, H. et al. | 1996
- 19
-
An integrated approach to adsorbate structure determination using photoelectron diffraction: Direct "imaging" and quantitative simulationWoodruff, D.P. et al. | 1996
- 28
-
Adsorption reactions of Ti-Si(001) by variable-temperature STMIshiyama, K. et al. | 1996
- 32
-
Measurement of surface state conductance using STM point contactsHasegawa, Y. et al. | 1996
- 38
-
MOS interface characterization by cross-sectional STMKomeda, T. et al. | 1996
- 42
-
Room temperature deposition of gold onto the diffuse and sharp diffraction spot Si(111)-((bent radical)3 x (bent radical)3)R30(degree) Au surfacesPlass, R. et al. | 1996
- 42
-
Room temperature deposition of gold onto the diffuse and sharp diffraction spot Si(111)-(3 x 3)R30 Au surfacesPlass, R. / Marks, L. D. et al. | 1996
- 47
-
Atomic structures of Ag on (bent radical)3 x (bent radical)3 Ag-Si(111) and on 7 x 7 Si(111)Natori, A. et al. | 1996
- 47
-
Atomic structures of Ag on 3 x 3 Ag/Si(111) and on 7 x 7 Si(111)Natori, A. / Murayama, M. / Yasunaga, H. et al. | 1996
- 51
-
Silver growth on Si(111)(bent radical)3 x (bent radical)3-Ag surfaces at low temperatureLijadi, M. et al. | 1996
- 51
-
Silver growth on Si(111)3 x 3-Ag surfaces at low temperatureLijadi, M. / Iwashige, H. / Ichimiya, A. et al. | 1996
- 55
-
Faceting of W(111) induced by Pd and Pt adlayers - A photoemission studyTao, H.-S. et al. | 1996
- 60
-
A new approach to full multiple-scattering XAFS calculationFujikawa, T. et al. | 1996
- 65
-
Structure determination of Si(111)(bent radical)3 x (bent radical)3-Sb surface by X-ray diffractionNakatani, S. et al. | 1996
- 65
-
Structure determination of Si(111)3 x 3-Sb surface by X-ray diffractionNakatani, S. / Kuwahara, Y. / Takahashi, T. / Aono, M. et al. | 1996
- 69
-
X-ray reflectivity for the complete determination of surface structuresTakahashi, T. et al. | 1996
- 73
-
STM studies of Si(hhm) surfaces with m/h = 1.4-1.5Suzuki, T. / Minoda, H. / Tanishiro, Y. / Yagi, K. / Kitada, H. / Shimizu, N. et al. | 1996
- 73
-
STM studies of Si(hhm) surfaces with m-hSuzuki, T. et al. | 1996
- 78
-
Study of the Si(001) clean surface structure using a six-circle surface X-ray diffractometerTakahasi, M. et al. | 1996
- 82
-
Measurement of Si(100) surface morphology by low energy ion scattering spectroscopyMatsui, M. et al. | 1996
- 87
-
Structure of coupled carrier plasmon-polar phonon modes at semiconductor surfacesInaoka, T. et al. | 1996
- 92
-
Theoretical simulation of atomic-scale friction in atomic force microscopySasaki, N. et al. | 1996
- 96
-
The NiO(001) surface structure calculated by a two-dimensional polarizable point-ion shell modelNakatsugawa, H. et al. | 1996
- 102
-
Phase transition of 12 x 1 reconstruction on Si(331)Hibino, H. et al. | 1996
- 107
-
Optical method for investigation of the kinetics of the Si(111) phase transitionSuzuki, T. et al. | 1996
- 111
-
AFM observation of monatomic step movements on NaCl(001) with the help of adsorbed waterShindo, H. et al. | 1996
- 115
-
Measurement of reflectivity of high energy electrons from a molten indium surfaceWatanabe, H. et al. | 1996
- 119
-
Monte Carlo simulation of time-of-flight spectra of coaxial impact collision ion scattering spectroscopy applied to MoS2(0001) and SrTiO3(001)Fuse, T. et al. | 1996
- 125
-
Spherical wave effects on ARXPS Debye-Waller factorsYanagawa, T. et al. | 1996
- 131
-
Multiple scattering approach to carbon XANES from benzene on Pt(111) surfaceYimagawa, M. et al. | 1996
- 135
-
Structure of W(100) for NO adsorption studied by ESDIADMiki, H. et al. | 1996
- 140
-
An STM observation of silver growth on hydrogen-terminated Si(111) surfacesNaitoh, M. et al. | 1996
- 145
-
Surface structure sequences forned on Ag(001) with increasing alkali-metal coverages at room temperatureImaki, M. et al. | 1996
- 145
-
Surface structure sequences formed on Ag(001) with increasing alkali-metal coverages at room temperatureImaki, M. / Mizuno, S. / Tochihara, H. et al. | 1996
- 150
-
Superstructure observation on a MgO(100) surfaceOta, H. et al. | 1996
- 155
-
Electron irradiation effect on CaF2(111) studied with He atom scatteringMiyake, T. et al. | 1996
- 160
-
Adsorption and decomposition of SiH4 and surface silicide formation on Cu(111) studied by X-ray absorption fine structure spectroscopyKanazawa, T. et al. | 1996
- 165
-
STM study of Ar+-induced defects produced by near-threshold energy collisionHahn, J.R. et al. | 1996
- 170
-
Dynamic XPS measurements on bismuth molybdate surfacesUchida, K. et al. | 1996
- 176
-
High-resolution electron energy loss spectroscopy on C60 and C70 ultrathin filmsFujikawa, Y. et al. | 1996
- 180
-
Extraction of depth distributions of electron-excited Auger electrons in Fe, Ni and Si using inelastic peak shape analysisFujita, D. et al. | 1996
- 186
-
Surface relaxation of Fe(001) by ab initio molecular dynamicsKishi, T. et al. | 1996
- 190
-
A HREELS investigation of benzene-Pt(111): The b2g(p *)) resonanceDippel, O. et al. | 1996
- 190
-
A HREELS investigation of benzene/Pt(111): the b~2~g(^*) resonanceDippel, O. / Cemic, F. / Hasselbrink, E. et al. | 1996
- 195
-
Scanning tunneling microscopy and molecular orbital calculation of thymine and adenine molecules adsorbed on Si(100)2 x 1 surfaceKasaya, M. et al. | 1996
- 202
-
Formation of Ni(100)-Al surface alloyO'Connor, D.J. et al. | 1996
- 208
-
Visualization of tip-surface geometry at atomic distance by TEM-STM holderNaitoh, Y. et al. | 1996
- 213
-
Surface polytypic determination of niobium diselenide by RHEEDSmith, A.E. et al. | 1996
- 218
-
Energy distribution of field emission electrons from a niobium <111> tipNagaoka, K. et al. | 1996
- 222
-
Simulation of AFM-LFM by molecular dynamics: Role of lateral force in contact-mode AFM imagingKomiyama, M. et al. | 1996
- 228
-
A15 type structure of ultrafine chromium particles studied by UHV-HRTEMOnozawa, T. et al. | 1996
- 233
-
Auger electron diffraction from NiO(100) layers on Ag(100)Marre, K. et al. | 1996
- 238
-
One-dimensional electronic states on stepped surfaces of Ni studied by ARUPSNamba, H. et al. | 1996
- 245
-
Full-hemisphere valence band photoemission spectra calculated for the ideal Si(001) surfaceSolterbeck, C.-H. et al. | 1996
- 251
-
Shake-up satellites in high energy Auger spectra of the 4d metalsKleiman, G.G. et al. | 1996
- 255
-
Oxygen adsorption on a W(100) surface studied by optical reflectance spectroscopyTanaka, M. et al. | 1996
- 260
-
Calculated spin and angular resolved photoelectron diffraction spectra for magnetiteRennert, P. et al. | 1996
- 265
-
First-principles study on the Ga-rich GaAs(001)-(4 x 2) surfaceOhno, T. et al. | 1996
- 270
-
A dielectric matrix calculation of the surface-plasmon energy for the silicon (100) surfaceForsyth, A.J. et al. | 1996
- 274
-
Chemisorption of NO on Pt(111) studied by ARPESIrokawa, K. et al. | 1996
- 279
-
2D electron-ion system on crystal surface in polarization reversal, incommensurate state and surface phononKinase, W. et al. | 1996
- 283
-
Electronic states of fullerenes adsorbed on Si surfaceYamaguchi, T. et al. | 1996
- 289
-
Surface hybridization shift of the empty f spectral function in Ce compoundsDu`o, L. et al. | 1996
- 293
-
Determination of the surface and bulk 4f spectral functions in Ce-Ir compoundsChiaia, G. et al. | 1996
- 298
-
4f binding energies and surface core-level shifts of Lu compoundsVavassori, P. et al. | 1996
- 302
-
De-excitation in solid SiCl4 following deep-core excitation at the K-edge: Relation between ion desorption and Auger decayBaba, Y. et al. | 1996
- 307
-
Electronic states of monolayer hexagonal boron nitride formed on the metal surfacesNagashima, A. et al. | 1996
- 312
-
Effects of oxygen termination on the electronic states of silicon quantum slabsKageshima, H. et al. | 1996
- 317
-
Scanning tunneling microscopy image of transition-metal-dichalcogenide surfacesKobayashi, K. et al. | 1996
- 322
-
Theory of adsorption of Cl2 molecules on GaAs(001) surfacesOhno, T. et al. | 1996
- 327
-
Surface sensitivity in self-consistent calculation of angle-resolved photoemission for Cu(100)Ishii, A. et al. | 1996
- 331
-
Inverse photoemission calculation of quantum well states for Co-Cu(100) and Cu-Co(100)Ishii, A. et al. | 1996
- 335
-
Nonequilibrium Anderson model, Coulomb blockade and scanning tunneling spectroscopyMakoshi, K. et al. | 1996
- 340
-
First-principles studies for the a-Sn-InSb(111)A heterojunction interfaceYamamoto, K. et al. | 1996
- 340
-
First-principles studies for the -Sn/InSb(111)A heterojunction interfaceYamamoto, K. / Kobayashi, K. et al. | 1996
- 345
-
Band mapping of in situ Cs intercalated transition metal dichalcogenidesBrauer, H.E. et al. | 1996
- 350
-
Potassium adsorption on the polar NbC(111) surface: Core-level photoemission studyOzawa, K. et al. | 1996
- 355
-
Electronic structure of monolayer C60 on Si(100)2 x 1 surfaceYajima, A. et al. | 1996
- 361
-
LT-STM-STS studies of Ag-Ge(100) surfaces: Growth, Coulomb blockade and superconductivityHattori, K. et al. | 1996
- 366
-
Theoretical study of the valence photoelectron spectrum for nitride films on St(111) surfaceSekine, R. / Kataoka, H. / Tokumitsu, S. / Edamoto, K. / Miyazaki, E. et al. | 1996
- 366
-
Theoretical study of the valence photoelectron spectrum for nitride films on Si(111) surfaceSekine, R. et al. | 1996
- 371
-
Energy spectra of field emission electrons from a W<310> tipOgawa, H. et al. | 1996
- 376
-
Theoretical study of Al adsorption on the hydrogen-terminated Si(100) surfaceTanida, Y. et al. | 1996
- 381
-
Quenching of enhanced magnetic order at Ni-Al alloy surfaces by segregated sulfur and by Ar+ impactPolak, M. et al. | 1996
- 386
-
Ballistic-electron emission microscopy as a probe for surface scienceSirringhaus, H. et al. | 1996
- 394
-
Simulations for structural properties and crystal growth on Si(001) surfaceTerakura, K. et al. | 1996
- 402
-
Chemical selectivity with ESD of chlorinated silicon speciesGuo, Q. et al. | 1996
- 407
-
Dynamic observation of In adsorption on Si(111) surfaces by UHV high-temperature scanning tunneling microscopyTanishiro, Y. et al. | 1996
- 414
-
Roughening of the surface of an Si layer grown on an Si(111)-(7 x 7) superlatticeShigeta, Y. et al. | 1996
- 418
-
In situ TEM observations of surfactant-mediated epitaxy: Growth of Ge on an Si(111) surface mediated by InMinoda, H. et al. | 1996
- 422
-
Surface reconstruction and electronic properties of clean and hydrogenated diamond (111) surfacesKern, G. et al. | 1996
- 427
-
Dangling-bond surface states on an amorphous germanium surface as observed by (e, 2e) spectroscopyCai, Y.Q. et al. | 1996
- 432
-
The interaction of Cu atoms with the Si(111)-3 x 3-Ag surfaceIshikawa, D. / Yuhara, J. / Ishigami, R. / Soda, K. / Morita, K. et al. | 1996
- 432
-
The interaction of Cu atoms with the Si(111)-(bent radical)3 x (bent radical)3-Ag surfaceIshikawa, D. et al. | 1996
- 436
-
Space fluctuation of empty states on 3C-SiC(001) surfaceHara, S. et al. | 1996
- 441
-
Secondary electron imaging of nucleation and growth of GaAsHomma, Y. et al. | 1996
- 446
-
Structural and doping properties of molecular beam epitaxy-grown Si-doped GaAs(001) surfacesGwo, S. et al. | 1996
- 451
-
First principles study of arsenic incorporation on a GaAs(001) surface during MBE growthShiraishi, K. et al. | 1996
- 455
-
Interface states in the Si band-gap obtained from XPS measurements under biasesKobayashi, H. et al. | 1996
- 459
-
Adsorption structure of Ba on an Si(001)-(2 x 1) surfaceUrano, T. et al. | 1996
- 464
-
Quenched Si(111)-DAS (dimer-adatom-stacking fault) structures studied by scanning tunneling microscopyMiyake, K. et al. | 1996
- 468
-
Defect-induced Si(100) dimer buckling structures studied by scanning tunneling microscopyUchikawa, M. et al. | 1996
- 472
-
Adsorption of gases on benzene-preplated graphiteAsada, H. et al. | 1996
- 476
-
Structural study of reconstructions at Si(110)-Pb surfacesOyama, H. et al. | 1996
- 481
-
Interaction of oxygen with alkali metals at the Ge(001) surface studied by metastable deexcitation spectroscopyYamada, K. et al. | 1996
- 486
-
A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growthIto, T. et al. | 1996
- 490
-
Self-organizing modification of Si(111)-(bent radical)3 x (bent radical)3 R30(degree)-Ga surfaces on the nanometer scaleFujita, K. et al. | 1996
- 490
-
Self-organizing modification of Si(111)-3 x 3-R30-Ga surfaces on the nanometer scaleFujita, K. / Kusumi, Y. / Ichikawa, M. et al. | 1996
- 495
-
Phonon localization in ion-irradiated GaAsIshioka, K. et al. | 1996
- 500
-
Theory on STM images of an Si(001) surface with stepsNakamura, Y. et al. | 1996
- 504
-
STM and tunneling current studies of a GaAs(001) surface prepared by deoxygenated and deionized water treatmentHirota, Y. et al. | 1996
- 509
-
Atomic and electronic structures of oxygen-adsorbed Si(001) surfacesUchiyama, T. et al. | 1996
- 514
-
Molecular precursor of oxygen on Si(111)7 x 7 surfaceSakamoto, K. et al. | 1996
- 518
-
Quantitative studies of step bunching dynamics on Si(111) induced by a current effectSenoh, T. et al. | 1996
- 522
-
STM studies of Si(5 5 12)2 x 1 surfacesSuzuki, T. et al. | 1996
- 527
-
Surface structures of (NH4)2Sx-treated GaAs studied by S K-edge X-ray absorption fine structureMaeyama, S. et al. | 1996
- 532
-
Measurement of the tip-sample capacitance for Si surfacesKurokawa, S. et al. | 1996
- 536
-
Anisotropy of vibrational polarizations associated with H on SiWatanabe, S. et al. | 1996
- 540
-
Surface termination of GaAs(001) by Sb dimersMaeda, F. et al. | 1996
- 545
-
3d core-level shifts at Se-GaAs(110)Schmidt, W.G. et al. | 1996
- 550
-
UHV REM investigation of the interaction between steps and dislocation on silicon (111) surface IILatyshev, A.V. et al. | 1996
- 555
-
H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBESuemitsu, M. et al. | 1996
- 560
-
Multiple scattering study of X-ray photoelectron diffraction from Si(111)-(bent radical)3 x (bent radical)3-Ag surfaceChen, X. et al. | 1996
- 560
-
Multiple scattering study of X-ray photoelectron diffraction from Si(111)-3 X 3-Ag surfaceChen, X. / Abukawa, T. / Tani, J. / Kono, S. et al. | 1996
- 565
-
AFM tip induced selective electrochemical etching of and metal deposition on p-GaAs(100) surfaceKoinuma, M. et al. | 1996
- 571
-
Floating phase in the lattice gas model of Ge(111)Sakamoto, Y. et al. | 1996
- 576
-
Studies of surface stress by reflection electron microscopy and transmission electron microscopyTamura, H. et al. | 1996
- 581
-
Effect of ultraviolet light irradiation on CVD-grown (100) and (111) diamond surfacesEimori, N. et al. | 1996
- 585
-
Femtosecond dynamics of hot-electron relaxation in Cu(110) and Cu(100)Ogawa, S. et al. | 1996
- 595
-
Heavy ion-surface interaction at low energy: Scattering of 3-300 eV Cs+, Xe+, and Ar+ from the Si surfaceYang, M.C. et al. | 1996
- 602
-
Dynamics of the formation of HD from D(H) atoms colliding with H(D)-Cu(111): A model study of an Eley-Rideal reactionRettner, C.T. et al. | 1996
- 609
-
Chemisorption of small molecules on palladium in terms of local density functional calculationsKito, T. et al. | 1996
- 614
-
Six-dimensional quantum dynamics of adsorption and desorption of H2 at Pd(100): No need for a molecular precursor adsorption stateGross, A. et al. | 1996
- 619
-
The growth of oxygen adlayers on Ag(110)Butler, D.A. et al. | 1996
- 624
-
The adsorption of methanol on Ag(111) studied with TDS and XPSJenniskens, H.G. et al. | 1996
- 629
-
Electron excited states of NO-Cu(111) studied by high-resolution two-photon photoelectron spectroscopyMunakata, T. et al. | 1996
- 634
-
p-bonded ethene on Pt(111) surface studied by IRASKubota, J. et al. | 1996
- 634
-
-bonded ethene on Pt(111) surface studied by IRASKubota, J. / Ichihara, S. / Kondo, J. N. / Domen, K. / Hirose, C. et al. | 1996
- 639
-
High resolution helium atom scattering from an epitaxially grown one monolayer film of KCN on KBr(001)Baker, J. et al. | 1996
- 645
-
Molecular adsorption of oxygen on transition-metal carbideAizawa, T. et al. | 1996
- 651
-
SFG study of formic acid on a Pt(110)-(1 x 2) surfaceWatanabe, N. et al. | 1996
- 656
-
Adsorption of bromochloroethane on GaAs(100)Singh, N.K. et al. | 1996
- 663
-
Behavior of atomic hydrogen on Au(001)Iwai, H. et al. | 1996
- 667
-
Structural models for Sb on Si(113): An experimental and theoretical STM studyWolff, G. et al. | 1996
- 673
-
Desorption induced by electronic potential energy of multiply charged ionsMochiji, K. et al. | 1996
- 678
-
Dissociative scattering of CF+-3 from a barium-covered Ag(111) surfaceKoppers, W.R. et al. | 1996
- 684
-
Promoted O2 sticking on Li-covered Si(100)Ohkubo, T. et al. | 1996
- 690
-
Observation of angle-, mass- and energy-resolved ESD ions from the MgO(001) surfaceGotoh, T. et al. | 1996
- 693
-
Photodissociation and desorption of multilayer acetone on a Si(100) surface by 193 nm laser irradiationKusunoki, I. et al. | 1996
- 698
-
New desorption state of D2 from deuterium-terminated Si(100) by potassium adsorptionHongo, S. et al. | 1996
- 703
-
Molecular simulation of the desorption process on solid surfaces under vacuum and supercritical conditionsTakaba, H. et al. | 1996
- 708
-
Oxygen adsorption on LaB6 (100) and (111) surfacesYamamoto, N. et al. | 1996
- 712
-
Surface phonon dispersion curves of the LaB6(111) surfaceRokuta, E. et al. | 1996
- 717
-
Coverage and structure of deuterium on Cu(111)Lee, G. et al. | 1996
- 721
-
Chemical reconstruction and catalysis of metal and bimetallic surfacesTanaka, K. et al. | 1996
- 729
-
Kinetics of initial oxidation of the Si(111)-7 x 7 surface near the critical conditionsShklyaev, A.A. et al. | 1996
- 733
-
Direct observation of C2H6 evolution in the reaction of a hydrogen atom beam with C2H4 adsorbed on Cu(100) at 100 KKim, J.-Y. et al. | 1996
- 740
-
Oxidation of ordered In overlayers on Si(111): An atomic picture of oxidation by STMKraft, J. et al. | 1996
- 748
-
Oxygen adsorption on Ge-covered Si(100) surfacesFukuda, T. et al. | 1996
- 753
-
Photoetching anisotropy of heavily doped Si(100) and Si(111) surfacesRhodin, T.N. et al. | 1996
- 759
-
Studies on the reaction sites of carbon monoxide oxidation on platinum (113) by angle resolved thermal desorptionYamanaka, T. et al. | 1996
- 764
-
Catalytic CO oxidation by reactive oxygen species at low temperaturesSueyoshi, T. et al. | 1996
- 764
-
Reactive oxygen species on unreconstructed Cu(110); catalytic CO oxidation by reactive oxygen species at low temperaturesSueyoshi, T. / Sasaki, T. / Iwasawa, Y. et al. | 1996
- 764
-
Reactive oxygen species on unreconstructed Cu(110)Sueyoshi, T. et al. | 1996
- 769
-
Activation of a thin film Pd catalyst for CO and ethanol oxidation by surface acoustic wavesWatanabe, Y. et al. | 1996
- 773
-
STM observation of surface reactions on a metal oxideOnishi, H. et al. | 1996
- 777
-
Effects of resonance oscillation on catalytic activity of a thin Pd film deposited on polar ferroelectric surfaceOhkawara, Y. et al. | 1996
- 781
-
Off-normal emission of N2 and normal emission of N2O produced by the desorption mediated reaction of NO on Pd(110)Ikai, M. et al. | 1996
- 786
-
Reactive carbon dioxide desorption on stepped Pt(112)Ohno, Y. et al. | 1996
- 791
-
The surface reactions of ethene on Ru(001) studied by reflection-absorption infrared spectroscopyParlett, P.M. et al. | 1996
- 796
-
Hydrogenation and H-D exchange reactions of ethylene on fee ultra-thin Fe films grown on a Rh(001) surfaceEgawa, C. / Oki, S. / Murata, Y. et al. | 1996
- 796
-
Hydrogenation and H-D exchange reactions of ethylene on fcc ultra-thin Fe films grown on a Rh(001) surfaceEgawa, C. et al. | 1996
- 800
-
Collision-induced reaction of a fluorinated Si(100) by hyperthermal Xe atomsKarahashi, K. et al. | 1996
- 804
-
The study of alcohol induced hydrogen permeation in a catalytic membrane reactorDannetun, H. et al. | 1996
- 809
-
Growth of epitaxial monolayersHenzler, M. et al. | 1996
- 820
-
PEEM and REM studies of surface dynamics: Electromigration and Cl adsorption and desorptionShidahara, Y. et al. | 1996
- 825
-
Effects of Si reconstruction on growth mode in Al-Si(111) studied by scanning tunneling microscopyUemura, A. et al. | 1996
- 830
-
Diffusion of a Si adatom on the Si(100) surface in an electric fieldKawai, T. et al. | 1996
- 835
-
Anomalous nucleation and growth of metal and alloy particles during vapor deposition on amorphous substratesAnton, R. et al. | 1996
- 840
-
Thermal decay of silicon islands and craters on silicon surfaces by scanning tunneling microscopyTanaka, Y. et al. | 1996
- 844
-
Adatom migration mechanism at SA steps on (001) surfaces of diamond structure crystalsTsuda, M. et al. | 1996
- 849
-
An STM, AES and LEED study of the segregated sulfur on Pd(111)Bömermann, J. et al. | 1996
- 855
-
Surface morphology induced by homoepitaxial growth on a vicinal Si(111) surfaceYokoyama, T. et al. | 1996
- 858
-
Domain growth of Si(111)-5 x 2 Au by high-temperature STMHasegawa, T. et al. | 1996
- 863
-
Pulsed trimethylgallium beam scattering from variously reconstructed GaAs surfacesSasaki, M. et al. | 1996
- 868
-
Thermal properties of anisotropic diffusion of Si adsorbates on a Si(001) surfaceDoi, T. et al. | 1996
- 873
-
Growth and characterization of ultrathin Pt films on Cu(111)Schröder, U. et al. | 1996
- 879
-
Surface diffusion of Ag on Fe(110)Noro, H. et al. | 1996
- 885
-
Nucleation and morphology evolution in the epitaxial growth of CuCl on MgO(001) and CaF2(111)Yanase, A. et al. | 1996
- 891
-
Molecular dynamics simulation of the thin film fabrication processKato, S. et al. | 1996
- 896
-
Initial growth stage of CaF2 on Si(111)-7 x 7 studied by high temperature UHV-STMSumiya, T. et al. | 1996
- 900
-
Forces of Pt adatom on a Pt(100) surface by the embedded-atom methodKatagiri, M. et al. | 1996
- 905
-
Measurement of the kinetics of surface segregation via the linear heating method: An experimental evaluationPlessis, J.du et al. | 1996
- 910
-
Surfactant effect of hydrogen for nickel growth on Si(111)7 x 7 surfaceMurano, K. et al. | 1996
- 917
-
Growth and annihilation of nickel silicide studied by scanning tunneling microscopyYoshimura, M. et al. | 1996
- 921
-
Thin film growth of Pt on Cu(111): A LEIS studyShen, Y.G. et al. | 1996
- 926
-
Growth kinetics of aluminum on the Si(100) surface studied by scanning tunneling microscopyZhu, C. et al. | 1996
- 931
-
Reactions of monolayer Fe with Si(001)-dihydride and -2 x 1 surfacesHasegawa, M. et al. | 1996
- 937
-
Gold deposition on a Si(111)(bent radical)3 x (bent radical)3-Au surfaceFuchigami, K. et al. | 1996
- 937
-
Gold deposition on a Si(111)3 X 3-Au surfaceFuchigami, K. / Ichimiya, A. et al. | 1996
- 943
-
Thin film and surface alloy formation with Cu deposits on Pt(100)hexRadnik, J. et al. | 1996
- 949
-
High-temperature scanning tunneling microscopy on vicinal Si(111) and formation of ordered facetsKampschulte, T. et al. | 1996
- 954
-
Production of dense and oriented structures including titanium nitride by energetic condensation from plasmasMcKenzie, D.R. et al. | 1996
- 961
-
Muonium emission into vacuum from tungsten and iridium surfacesMatsushita, A. et al. | 1996
- 966
-
Ar^+ ion recoil-implantation of Cu and Ag from the Si(111)-quasi-5 x 5-Cu and Cu/Si(111)-3 x 3-Ag surfaces in the keV regimeIshikawa, D. / Yuhara, J. / Ishigami, R. / Soda, K. / Morita, K. et al. | 1996
- 966
-
Ar+ ion recoil-implantation of Cu and Ag from the Si(111)-quasi-5 x 5-Cu and Cu-Si(111)-(bent radical)3 x (bent radical)3-Ag surfaces in the keV regimeIshikawa, D. et al. | 1996
- 971
-
Author index| 1996
- 981
-
Subject index| 1996
- 998
-
Materials index| 1996
-
Congress Committees| 1996
-
Preface| 1996
-
Conference Editors| 1996