X-ray diffraction characterization of MBE grown Pr1-xSrxMnO3 thin films on NGO(1 1 0) (English)
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In:
Applied surface science
;
190
, 1
; 408-415
;
2002
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ISSN:
- Article (Journal) / Print
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Title:X-ray diffraction characterization of MBE grown Pr1-xSrxMnO3 thin films on NGO(1 1 0)
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Contributors:
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Published in:Applied surface science ; 190, 1 ; 408-415
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2002
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 52.78 / 35.18 / 33.68
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Keywords:
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Source:
Table of contents – Volume 190, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Editorial(s)Okumura, T. / Fukui, T. / Hasegawa, H. et al. | 2002
- 1
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PrefaceOkumura, Tsugunori et al. | 2002
- 2
-
Band structures and band offsets of high K dielectrics on SiRobertson, J. et al. | 2002
- 11
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Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layerIshikawa, Yasuhiko et al. | 2002
- 16
-
Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealingIshiyama, T. et al. | 2002
- 20
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Time evolution of interface roughness during thermal oxidation on Si(0 0 1)Takakuwa, Yuji et al. | 2002
- 26
-
Competing thermal relaxation processes in response to intrinsic defects produced by exposing SiO2 to synchrotron radiationAkazawa, Housei et al. | 2002
- 30
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Monte Carlo study of interfacial silicon suboxide layers and oxidation kineticsda Silva, E.F. et al. | 2002
- 35
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The role of multiple damaged layers at the Si-SiO2 interface on the dielectric breakdown of MOS capacitorsSombra, S.S. et al. | 2002
- 39
-
Compositional depth profiling of ultrathin oxynitride-Si interface using XPSKato, H. et al. | 2002
- 43
-
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloysJohnson, Robert S. et al. | 2002
- 48
-
A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloysLucovsky, Gerald et al. | 2002
- 56
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Penetration of electronic states from silicon substrate into silicon oxideTakahashi, K. et al. | 2002
- 60
-
Real time observation of oxygen chemisorption states on Si(001)-2x1 during supersonic oxygen molecular beam irradiationYoshigoe, A. et al. | 2002
- 66
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Characterization of high-k gate dielectric-silicon interfacesMiyazaki, Seiichi et al. | 2002
- 75
-
Si 2p and O 1s photoemission from oxidized Si(0 0 1) surfaces depending on translational kinetic energy of incident O2 moleculesTeraoka, Yuden et al. | 2002
- 80
-
Observation of triangular terraces and triangular craters of CaF2 film on Si(1 1 1) substrateHorio, Yoshimi et al. | 2002
- 88
-
Structural and electrical properties of crystalline (1-x)Ta2O5-xTiO2 thin films fabricated by metalorganic decompositionSalam, K.M.A. et al. | 2002
- 96
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In-phase step wandering on vicinal Si(1 1 1) surfacesNatori, Akiko et al. | 2002
- 103
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Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag-Si(1 1 1) surfacesZhang, H.M. et al. | 2002
- 108
-
Changes of phase and intensity of optical SHG with Ag deposition on Si(111)-7x7 surfacesHirayama, H. et al. | 2002
- 113
-
Strain due to nickel diffusion into hydrogen-terminated Si(111) surfaceEmoto, T. et al. | 2002
- 121
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Core-level photoemission of the Si(111)-21x21-Ag surface using synchrotron radiationTong, X. / Ohuchi, S. / Tanikawa, T. / Harasawa, A. / Okuda, T. / Aoyagi, Y. / Kinoshita, T. / Hasegawa, S. et al. | 2002
- 121
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Core-level photoemission of the Si(111)-x-Ag surface using synchrotron radiationTong, Xiao et al. | 2002
- 129
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Theoretical investigation on the electronic states localized at grain boundaries in semiconductorsUchida, Kazuyuki et al. | 2002
- 134
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Surface structure evolution during Sb adsorption on Si(1 1 1)-In(4x1) reconstructionGruznev, D.V. et al. | 2002
- 139
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Influence of interface structures on Sn thin film growth on Si(1 1 1) surfaceRyu, J.T. et al. | 2002
- 144
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Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluationNagase, M. et al. | 2002
- 151
-
Structural, chemical and optical features of nanocrystalline Si films prepared by PECVD techniquesPark, M.-B. et al. | 2002
- 157
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STM and LEED observations of erbium silicide nanostructures grown on Si(1 0 0) surface: atomic-scale understandingsCai, Qun et al. | 2002
- 161
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Nanoparticle-induced multi-functionalization of silicon: A plug and play approachPrabhakaran, K. et al. | 2002
- 166
-
The influence of graded interfaces in the electronic spectrum of nanometer silicon dotsde Sousa, J.S. et al. | 2002
- 171
-
Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etchingLee, J.-S. et al. | 2002
- 176
-
III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networksKasai, Seiya et al. | 2002
- 184
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Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applicationsMotohisa, J. et al. | 2002
- 191
-
Interface-related effects on confined excitons in GaAs-AlxGa1-xAs single quantum wellsFerreira, E.C. et al. | 2002
- 195
-
Acoustic phonons localized at an interface between superlattice and liquidMizuno, Seiji et al. | 2002
- 200
-
Anomalous delay of phonons reflected from the surface of a superlatticeMizuno, Seiji et al. | 2002
- 205
-
Photoluminescence of charged magneto-excitons in InAs single quantum dotsNatori, Akiko et al. | 2002
- 212
-
Size-shrinkage effect of InAs quantum dots during a GaAs capping growthYamaguchi, Koichi et al. | 2002
- 218
-
Annealing effect on InAs islands on GaAs(001) substrates studied by scanning tunneling microscopySuekane, Osamu et al. | 2002
- 222
-
Current instabilities in GaAs-InAs self-aggregated quantum dot structuresHorváth, Zs J. et al. | 2002
- 226
-
Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs-InP substratesKoo, B.H. et al. | 2002
- 231
-
Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxyIto, Akira et al. | 2002
- 236
-
Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPETakeda, Junichiro et al. | 2002
- 242
-
Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structuresYumoto, Miki et al. | 2002
- 247
-
Exciton energy broadening due to interface fluctuations in ZnSe-ZnSxSe1-x strained quantum wellsMaia, F.F. et al. | 2002
- 252
-
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodesWernersson, L.-E. et al. | 2002
- 258
-
Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopyBruls, D.M. et al. | 2002
- 264
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GaAs(001) surface reconstructions: geometries, chemical bonding and optical propertiesSchmidt, W.G. et al. | 2002
- 269
-
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4x4) surfacesNegoro, Noboru et al. | 2002
- 275
-
Diffusion process of electrons injected from STM tip into AlGaAs-GaAs quantum wellsTsuruoka, T. et al. | 2002
- 279
-
Decomposition mechanism of triethylindium (TEI) on a GaP(001)-(2x1) surface studied by LEED, AES, TPD and HREELSFukuda, Y. et al. | 2002
- 284
-
An investigation of multi-quantum barriers for band offset engineering in AlGaInP-GaInP lasersTeng, K.S. et al. | 2002
- 288
-
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodesOhki, Susumu et al. | 2002
- 294
-
Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs-GaAs heterojunctionNemcsics, Ákos et al. | 2002
- 298
-
Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layerFu, Zhengwen et al. | 2002
- 302
-
Acceptor- and donor-like interfacial states at ZnSe-GaAs heterovalent interfacesLu, Fang et al. | 2002
- 307
-
Reflectance difference spectroscopy during CdTe-ZnTe interface formationBalderas-Navarro, R.E. et al. | 2002
- 311
-
Surface and interface electronic properties of group III-nitride heterostructuresRizzi, Angela et al. | 2002
- 318
-
ICTS measurements for p-GaN Schottky contactsShiojima, Kenji et al. | 2002
- 322
-
Mechanism of current leakage through metal-n-GaN interfacesOyama, Susumu et al. | 2002
- 326
-
Characterization of metal-GaN Schottky interfaces based on I-V-T characteristicsSawada, T. et al. | 2002
- 330
-
Localized exciton dynamics in InGaN quantum well structuresChichibu, Shigefusa F. et al. | 2002
- 339
-
Low-temperature activation of Mg-doped GaN with thin Co and Pt filmsWaki, I. et al. | 2002
- 343
-
Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layerAnantathanasarn, Sanguan et al. | 2002
- 348
-
Electrical characteristics of Mg-doped GaN activated with Ni catalystsKamii, Y. et al. | 2002
- 352
-
Characterization of hetero-interfaces between group III nitrides formed by PLD and various substratesOhta, J. et al. | 2002
- 356
-
Photoemission study of samarium on GaN(0001) and CdTe(100)Guziewicz, E. et al. | 2002
- 361
-
Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitrideJin, Zhi et al. | 2002
- 366
-
Soft X-ray emission study of thermally treated Ni(film)-4H-SiC(substrate) interfaceOhi, A. et al. | 2002
- 371
-
Surface-enhanced Raman scattering study of silver deposition on thin Alq3 layersSalvan, G. et al. | 2002
- 376
-
Interaction of metals with an organic semiconductor: Ag and In on PTCDAPark, S. et al. | 2002
- 382
-
Vibration spectroscopic study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq3) with potassiumSakurai, Y. et al. | 2002
- 386
-
Raman spectroscopy of the PTCDA-inorganic semiconductor interface: evidence for charge transferKobitski, A.Yu et al. | 2002
- 390
-
Fabrication of high quality silicon-polyaniline heterojunctionsLaranjeira, Jane M.G. et al. | 2002
- 395
-
Spin injection into semiconductors using dilute magnetic semiconductorsGould, C. et al. | 2002
- 403
-
Electrical peculiarities in Al-Si-Ge-.-Ge-Si and Al-SiGe-Si structuresHorváth, Zs J. et al. | 2002
- 408
-
X-ray diffraction characterization of MBE grown Pr1-xSrxMnO3 thin films on NGO(1 1 0)Liu, G. et al. | 2002
- 416
-
Phase transition and dielectric characteristics of nano-grained BaTiO3 ceramics synthesized from surface-coated nano-powdersPark, M.-B. et al. | 2002
- 422
-
Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)Koch, R. et al. | 2002
- 428
-
Surface-interface issues in THz electronicsHartnagel, H.L. et al. | 2002
- 437
-
Solid-phase epitaxy of CaSi2 on Si(111) and the Schottky-barrier height of CaSi2-Si(111)Würz, R. et al. | 2002
- 441
-
Modification of Al-Si interface and Schottky barrier height with chemical treatmentHorváth, Zs J. et al. | 2002
- 445
-
Identity of defect causing nonideality in nearly ideal Au-n-Si Schottky barriersMaeda, Keiji et al. | 2002
- 450
-
High performance of thin nano-crystalline ZrN diffusion barriers in Cu-Si contact systemsTakeyama, Mayumi B. et al. | 2002
- 455
-
Morphology and interfacial properties of microrelief metal-semiconductor interfaceDmitruk, N.L. et al. | 2002
- 461
-
Barrier height engineering of Ag-GaAs(100) Schottky contacts by a thin organic interlayerKampen, T.U. et al. | 2002
- 467
-
The passivation of atomic scale defects present on III-V semiconductor laser facets: an STM-STS investigationWilks, S.P. et al. | 2002
- 475
-
Metallization and Schottky-barrier formation for Se-passivated GaAs(1 0 0) interfacesBiel, Blanca et al. | 2002
- 480
-
Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substratesGong, Q. et al. | 2002
- 485
-
Highly stable passivation of a Si(1 1 1) surface using bilayer-GaSeUeno, K. et al. | 2002
- 491
-
Control of polarity of heteroepitaxial ZnO films by interface engineeringHong, Soon-Ku et al. | 2002
- 498
-
Low-energy electron-excited nanoluminescence studies of GaN and related materialsBrillson, L.J. et al. | 2002
- 508
-
Depth-resolved cathodoluminescence characterization of buried InGaP-GaAs heterointerfacesIshikawa, Fumitaro et al. | 2002
- 513
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Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field studyAchermann, M. et al. | 2002
- 517
-
Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)Kangawa, Y. et al. | 2002
- 521
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Surface and interface of Ti(film)-SiC(substrate) system: a soft X-ray emission and photoemission electron microscopy studyLabis, Joselito et al. | 2002
- 527
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AUTHOR INDEX| 2002
- 534
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SUBJECT INDEX| 2002
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CONTENTS| 2002