Track formation and fabrication of nanostructures with MeV-ion beams (English)
- New search for: Toulemonde, M.
- New search for: Toulemonde, M.
- New search for: Trautmann, C.
- New search for: Balanzat, E.
- New search for: Hjort, K.
- New search for: Weidinger, A.
In:
Nuclear instruments & methods in physics research / B
;
216
; 1-8
;
2004
-
ISSN:
- Article (Journal) / Print
-
Title:Track formation and fabrication of nanostructures with MeV-ion beams
-
Contributors:
-
Published in:
-
Publisher:
- New search for: Elsevier
-
Place of publication:Amsterdam [u.a.]
-
Publication date:2004
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 535/3450
- New search for: 33.00
- Further information on Basic classification
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 216
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Track formation and fabrication of nanostructures with MeV-ion beamsToulemonde, M / Trautmann, C / Balanzat, E / Hjort, K / Weidinger, A et al. | 2003
- 9
-
The shape and ordering of self-organized nanostructures by ion sputteringFrost, F. / Ziberi, B. / Höche, T. / Rauschenbach, B. et al. | 2003
- 20
-
Thick elevation of silicon on patterned structure using ion implantation induced selective etchingHuda, M.Q. / Sakamoto, K. et al. | 2003
- 25
-
Ion-beam induced defects and nanoscale amorphous clusters in silicon carbideWeber, W.J / Gao, F / Devanathan, R / Jiang, W / Wang, C.M et al. | 2003
- 36
-
Effect of substrate orientation on defect generation and annealing behaviour in carbon implanted siliconHäberlen, M. / Lindner, J.K.N. / Stritzker, B. et al. | 2003
- 41
-
Atomistic modeling of ion beam induced amorphization in siliconPelaz, Lourdes / Marqués, Luis A. / Aboy, Maria / Barbolla, Juan et al. | 2003
- 46
-
Ion beam induced defects in crystalline siliconCristiano, F / Cherkashin, N / Hebras, X / Calvo, P / Lamrani, Y / Scheid, E / de Mauduit, B / Colombeau, B / Lerch, W / Paul, S et al. | 2003
- 57
-
The laser annealing induced phase transition in silicon: a molecular dynamics studyMarqués, Luis A. / Pelaz, Lourdes / Aboy, Marı́a / Barbolla, Juan et al. | 2003
- 62
-
Chemically guided epitaxy of Rb-ion amorphized a-quartz: the roles of Rb and oxygenGasiorek, S. et al. | 2004
- 62
-
Chemically guided epitaxy of Rb-ion amorphized α-quartz: the roles of Rb and oxygenGąsiorek, S. / Dhar, S. / Keinonen, J. / Lieb, K.P. / Sajavaara, T. et al. | 2003
- 67
-
Damage accumulation and dopant migration during shallow As and Sb implantation into SiWerner, M. / van den Berg, J.A. / Armour, D.G. / Vandervorst, W. / Collart, E.H.J. / Goldberg, R.D. / Bailey, P. / Noakes, T.C.Q. et al. | 2003
- 75
-
Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted siliconSkarlatos, D. / Perego, M. / Tsamis, C. / Ferrari, S. / Fanciulli, M. / Tsoukalas, D. et al. | 2003
- 80
-
Self-interstitial diffusion and clustering with impurities in crystalline siliconMirabella, S. / De Salvador, D. / Napolitani, E. / Giannazzo, F. / Impellizzeri, G. / Bisognin, G. / Terrasi, A. / Raineri, V. / Berti, M. / Carnera, A. et al. | 2003
- 90
-
Depth dependence of defect evolution and TED during annealingColombeau, B. / Cowern, N.E.B. / Cristiano, F. / Calvo, P. / Lamrani, Y. / Cherkashin, N. / Lampin, E. / Claverie, A. et al. | 2003
- 95
-
Coupling of atom-by-atom calculations of extended defects with B kick-out equations: application to the simulation of boron tedLampin, E. / Cristiano, F. / Lamrani, Y. / Colombeau, B. et al. | 2003
- 100
-
Atomistic analysis of the ion beam induced defect evolutionAboy, Maria / Pelaz, Lourdes / Marqués, Luis A. / Barbolla, Juan et al. | 2003
- 105
-
Annealing behavior of high temperature implanted Fe impurities in n-InPCesca, T. / Gasparotto, A. / Fraboni, B. / Priolo, F. et al. | 2003
- 110
-
Annealing of BaTiO3 thin films after heavy ion implantationDietrich, M. / Buchal, Ch. / Correia, J.G. / Deicher, M. / Schmid, M. / Uhrmacher, M. / Vetter, U. / Wahl, U. et al. | 2003
- 116
-
ZnTe nanoparticles formed by ion implantation in a SiO2 layer on siliconChemam, R. / Bouabellou, A. / Grob, J.J. / Muller, D. / Schmerber, G. et al. | 2003
- 121
-
Formation of CdSe nanoclusters in MgO by ion beam synthesisvan Huis, M.A. / van Veen, A. / Schut, H. / Eijt, S.W.H. / Kooi, B.J. / De Hosson, J.Th.M. et al. | 2003
- 127
-
n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantationPark, C.H. / Jeong, I.S. / Bae, H.S. / Kim, T.G. / Im, S. et al. | 2003
- 131
-
FTIR and Vis–FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardmentLaskarakis, A. / Gravalidis, C. / Logothetidis, S. et al. | 2003
- 137
-
Microstructure of b-FeSi2 buried layers synthesis by ion implantationAyache, R. et al. | 2004
- 137
-
Microstructure of β-FeSi2 buried layers synthesis by ion implantationAyache, R. / Richter, E. / Bouabellou, A. et al. | 2003
- 143
-
Physical properties and structure of thin ion-beam modified polymer filmsGuenther, M / Gerlach, G / Suchaneck, G / Sahre, K / Eichhorn, K.-J / Baturin, V / Duvanov, S et al. | 2003
- 149
-
Formation, growth and dissociation of He bubbles in Al2O3van Huis, M.A. / van Veen, A. / Labohm, F. / Fedorov, A.V. / Schut, H. / Kooi, B.J. / De Hosson, J.Th.M. et al. | 2003
- 156
-
Fluence dependence and thermal stability of defects in helium-implanted cubic zirconiaSaudé, S. / Grynszpan, R.I. / Anwand, W. / Brauer, G. / Grob, J.J. / Le Gall, Y. et al. | 2003
- 161
-
Helium diffusion in metals investigated by nuclear reaction analysisFlament, J.L. / Ziélinski, F. / Saudé, S. / Grynszpan, R.I. et al. | 2003
- 167
-
Optical study of Si nanocrystals in Si/SiO2 layers by spectroscopic ellipsometryEn Naciri, A. / Mansour, M. / Johann, L. / Grob, J.J. / Eckert, C. et al. | 2003
- 173
-
Thermal evolution of {113} defects in silicon: transformation against dissolutionCalvo, P / Claverie, A / Cherkashin, N / Colombeau, B / Lamrani, Y / de Mauduit, B / Cristiano, F et al. | 2003
- 178
-
Ion bombardment induced morphology modifications on self-organized semiconductor surfacesHofer, C. / Abermann, S. / Teichert, C. / Bobek, T. / Kurz, H. / Lyutovich, K. / Kasper, E. et al. | 2003
- 185
-
Surface structure dependence of impact processes of gas cluster ionsAoki, Takaaki / Matsuo, Jiro et al. | 2003
- 191
-
Surface smoothing with large current cluster ion beamSeki, T. / Matsuo, J. et al. | 2003
- 196
-
Slow highly charged ions for nanoscale surface modificationsKentsch, U / Landgraf, S / Schmidt, M / Tyrroff, H / Zschornack, G / Grossmann, F / Ovsyannikov, V.P / Ullmann, F et al. | 2003
- 202
-
Sputtering of binary crystal surface under grazing ion bombardmentDzhurakhalov, A.A. et al. | 2003
- 206
-
Roughness evolution of some X-UV reflective materials induced by low energy (<1 keV) ion beam millingGailly, P / Collette, J.-P / Jamar, C / Fleury-Frenette, K / Médart, P / Stockman, Y et al. | 2003
- 213
-
Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2Garrido, B. / López, M. / Pérez-Rodrı́guez, A. / Garcı́a, C. / Pellegrino, P. / Ferré, R. / Moreno, J.A. / Morante, J.R. / Bonafos, C. / Carrada, M. et al. | 2003
- 222
-
Electroluminescence properties of SiOx layers implanted with rare earth ionsIrrera, A. / Miritello, M. / Pacifici, D. / Franzò, G. / Priolo, F. / Iacona, F. / Sanfilippo, D. / Di Stefano, G. / Fallica, P.G. et al. | 2003
- 228
-
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applicationsNormand, P. / Kapetanakis, E. / Dimitrakis, P. / Skarlatos, D. / Beltsios, K. / Tsoukalas, D. / Bonafos, C. / Ben Assayag, G. / Cherkashin, N. / Claverie, A. et al. | 2003
- 239
-
Ion induced precipitation of metal particles in triethoxysilane for optical and magnetic applicationsPivin, J.C. et al. | 2003
- 245
-
Structural and magnetic properties of Fe–Al silica composites prepared by sequential ion implantationde Julián Fernández, C. / Tagliente, M.A. / Mattei, G. / Sada, C. / Bello, V. / Maurizio, C. / Battaglin, G. / Sangregorio, C. / Gatteschi, D. / Tapfer, L. et al. | 2003
- 251
-
A positron beam study of hydrogen confined in nano-cavities in crystalline siliconSchut, H / van Gog, H / van Veen, A / van Huis, M.A / Eijt, S.W.H et al. | 2003
- 257
-
Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafersHöchbauer, T. / Misra, A. / Nastasi, M. / Henttinen, K. / Suni, T. / Suni, I. / Lau, S.S. / Ensinger, W. et al. | 2003
- 264
-
Buried silicon dioxide formation in a precursor nanocavity layer in Sivan Veen, A. / Rivera, A. / Schut, H. / van Gog, H. et al. | 2003
- 269
-
Mechanical properties of pulsed laser-deposited hydroxyapatite thin film implanted at high energy with N+ and Ar+ ions. Part I: nanoindentation with spherical tipped indenterPelletier, H. / Nelea, V. / Mille, P. / Muller, D. et al. | 2003
- 275
-
Mechanical properties of pulsed laser-deposited hydroxyapatite thin films implanted at high energy with N+ and Ar+ ions. Part II: nano-scratch tests with spherical tipped indenterPelletier, H. / Nelea, V. / Mille, P. / Muller, D. et al. | 2003
- 281
-
Direct evidence of the recombination of silicon interstitial atoms at the silicon surfaceLamrani, Y. / Cristiano, F. / Colombeau, B. / Scheid, E. / Calvo, P. / Schäfer, H. / Claverie, Alain et al. | 2003
- 286
-
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxyDe Salvador, D. / Napolitani, E. / Mirabella, S. / Impellizzeri, G. / Priolo, F. / Terrasi, A. / Bisognin, G. / Berti, M. / Drigo, A.V. / Carnera, A. et al. | 2003
- 291
-
A simple model for boron trapping by He implantation extended defects in Si: the role of boron diffusivityCayrel, F. / Alquier, D. / Mathiot, D. / Ventura, L. / Vincent, L. / Gaudin, G. / Jérisian, R. et al. | 2003
- 297
-
Optimization of InGaAs/InP MHBT and HBT’s technology: control and modeling of beryllium diffusion phenomenaIhaddadene-Lenglet, M. / Marcon, J. et al. | 2003
- 303
-
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline siliconIhaddadene-Le Coq, L. / Marcon, J. / Dush-Nicolini, A. / Masmoudi, K. / Ketata, K. et al. | 2003
- 308
-
Ion beam induced coherent displacement in Al on Au systemPeltola, J / Nordlund, K et al. | 2003
- 313
-
Microstructure of N+ ion beam induced epitaxial crystallized SiSahoo, P.K. / Gupta, S. / Pradhan, A. / Kulkarni, V.N. et al. | 2003
- 318
-
Comparative analysis of the implantation-induced structural modifications in GaAs and GeDesnica-Frankovic, I.D. et al. | 2003
- 324
-
Cathodoluminescence of a-quartz after hot Ge ion irradiationSahoo, P.K. et al. | 2004
- 324
-
Cathodoluminescence of α-quartz after hot Ge ion irradiationSahoo, P.K. / Dhar, S. / Gąsiorek, S. / Lieb, K.P. et al. | 2003
- 329
-
Ion beam synthesis of Co nanoparticles in SiO2: Monte Carlo simulationCerruti, C. / Stoquert, J.P. / D’Orléans, C. / Estournès, C. / Grob, J.J. / Guille, J.L. / Haas, F. / Muller, D. / Richard-Plouet, M. et al. | 2003
- 334
-
Finite size effects in phase transformation kinetics in thin films and surface layersTrofimov, Vladimir I. / Trofimov, Ilya V. / Kim, Jong-Il et al. | 2003
- 340
-
Ion-beam induced modification of pores array in anodic aluminaCherenda, N.N. / Uglov, V.V. / Litvinovich, G.V. / Danilyuk, A.L. et al. | 2003
- 346
-
Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporationSon, J.H. / Kim, H.B. / Whang, C.N. / Sung, M.C. / Jeong, K. / Im, S. / Chae, K.H. et al. | 2003
- 350
-
Magnetic modifications of thin CoFe films induced by Xe+-ion irradiationGupta, Ratnesh / Müller, G.A. / Schaaf, P. / Zhang, K. / Lieb, K.P. et al. | 2003
- 355
-
Irradiation effects in carbon nanotubesKrasheninnikov, A.V. / Nordlund, K. et al. | 2003
- 367
-
Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layersKim, H.B. / Son, J.H. / Whang, C.N. / Chae, K.H. et al. | 2003
- 372
-
Elongated Co nanoparticles induced by swift heavy ion irradiationsD’Orléans, C. / Stoquert, J.P. / Estournès, C. / Grob, J.J. / Muller, D. / Guille, J.L. / Richard-Plouet, M. / Cerruti, C. / Haas, F. et al. | 2003
- 379
-
Surface modification with gas cluster ion beams from fundamental characteristics to applicationsToyoda, N. / Matsuo, J. / Yamada, I. et al. | 2003
- 390
-
Formation and dissociation of Zn nanoclusters in MgOvan Huis, M.A. / van Veen, A. / Schut, H. / Kooi, B.J. / De Hosson, J.Th.M. / Du, X.S. / Hibma, T. / Fromknecht, R. et al. | 2003
- 396
-
Combinatorial ion implantation – a smart technique applied to synthesize CdSe-nanocrystalsGroßhans, I. / Karl, H. / Stritzker, B. et al. | 2003
- 402
-
Effect of diffusion on ion beam-synthesized PbS nanocrystalsEspiau de Lamaestre, R. / Bernas, H. / Jomard, F. et al. | 2003
- 407
-
Direct ion beam synthesis of II–VI nanocrystalsDesnica, U.V / Buljan, M / Desnica-Frankovic, I.D / Dubcek, P / Bernstorff, S / Ivanda, M / Zorc, H et al. | 2003
- 415
-
Author index| 2004
- CO2
-
Editorial board| 2004
- ix
-
Contents| 2004
- vii
-
Symposium E on Ion Beams for Nanoscale Surface ModificationsClaverie, A. et al. | 2003