Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance (English)
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In:
Solid state electronics
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48
, 10
; 1921-1926
;
2004
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ISSN:
- Article (Journal) / Print
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Title:Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performance
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Contributors:Hackbarth, T. ( author ) / Herzog, H.-J. / Hieber, K.-H. / König, U. / Mantl, S. / Holländer, B. / Lenk, St / von Känel, H. / Enciso, M.
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Published in:Solid state electronics ; 48, 10 ; 1921-1926
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2004
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3480/5670
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Source:
Table of contents – Volume 48, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1691
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Editorial-ForewordIliadis, Agis A. et al. | 2004
- 1691
-
ForewordIliadis, A. A. et al. | 2004
- 1693
-
High temperature Hall effect measurements of semi-insulating 4H–SiC substratesMitchel, W.C. / Mitchell, William D. / Zvanut, M.E. / Landis, G. et al. | 2004
- 1699
-
InP heterojunction bipolar transistor with a selectively implanted collectorDong, Yingda / Wei, Yun / Griffith, Zach / Urteaga, Miguel / Dahlström, Mattias / Rodwell, Mark J.W. et al. | 2004
- 1703
-
Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectricsZhao, Eugene / Zhang, John / Salman, Akram / Subba, Niraj / Chan, Jay / Marathe, Amit / Beebe, Stephen / Taylor, Kurt et al. | 2004
- 1709
-
An analytical model of SiC MESFET incorporating trapping and thermal effectsMukherjee, Sankha S. / Islam, Syed S. / Bowman, Robert J. et al. | 2004
- 1717
-
Reliability of SiC MOS devicesSingh, Ranbir / Hefner, Allen R. et al. | 2004
- 1721
-
The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devicesBertilsson, K. / Nilsson, H.-E. et al. | 2004
- 1727
-
Double gate (DG)-SOI ratioed logic with symmetric DG load––a novel approach for sub 50 nm low-voltage/low-power circuit designMitra, S. / Salman, A. / Ioannou, D.P. / Tretz, C. / Ioannou, D.E. et al. | 2004
- 1733
-
Application of heat flow models to SOI current mirrorsYu, Feixia / Cheng, Ming-C. et al. | 2004
- 1741
-
Impact of device physics on DG and SOI MOSFET linearityMa, Wei / Kaya, Savas et al. | 2004
- 1747
-
Molecular devices formed by direct monolayer attachment to siliconRichter, C.A. / Hacker, C.A. / Richter, L.J. / Vogel, E.M. et al. | 2004
- 1753
-
Macroelectronic applications of carbon nanotube networksNovak, J.P. / Lay, M.D. / Perkins, F.K. / Snow, E.S. et al. | 2004
- 1757
-
Compact models for silicon carbide power devicesMcNutt, Ty / Hefner, Allen / Mantooth, Alan / Berning, David / Singh, Ranbir et al. | 2004
- 1763
-
Analytical model of body factor in short channel bulk MOSFETs for low voltage applicationsKumar, Anil / Nagumo, Toshiharu / Tsutsui, Gen / Hiramoto, Toshiro et al. | 2004
- 1767
-
Impact of asymmetric metal coverage on high performance MOSFET mismatchFukumoto, Jay / Das, Tejasvi / Paradis, Ken / Burleson, Jeff / Moon, J.E. / Mukund, P.R. et al. | 2004
- 1771
-
Scalable 2-bit silicon–oxide–nitride–oxide–silicon (SONOS) memory with physically separated local nitrides under a merged gateLee, Yong Kyu / Sung, Suk Kang / Sim, Jae Sung / Song, Ki Whan / Lee, Jong Duk / Park, Byung-Gook / Kang, Sung Taeg / Chung, Chilhee / Park, Donggun / Kim, Kinam et al. | 2004
- 1777
-
MEMS-based embedded sensor virtual components for system-on-a-chip (SoC)Afridi, M. / Hefner, A. / Berning, D. / Ellenwood, C. / Varma, A. / Jacob, B. / Semancik, S. et al. | 2004
- 1783
-
Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixingTait, Gregory B. / Ameen, David B. et al. | 2004
- 1791
-
Si doped p- and n-type AlxGa1−xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrateSaravanan, S. / Dharmarasu, N. / Vaccaro, P.O. / Zanardi Ocampo, J.M. / Kubota, K. / Saito, N. et al. | 2004
- 1795
-
Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuitsKim, Kyechong / Iliadis, Agis A. / Granatstein, Victor L. et al. | 2004
- 1801
-
Modeling of direct tunneling current through interfacial oxide and high-K gate stacksZhao, Yijie / White, Marvin H. et al. | 2004
- 1809
-
Screening of Si–H bonds during plasma processingSrinivasan, P. / Vootukuru, B. / Misra, D. et al. | 2004
- 1815
-
Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopyAkaki, Yoji / Ohryoji, Naoto / Yoshino, Kenji / Kawakita, Shirou / Imaizumi, Mitsuru / Niki, Shigeru / Sakurai, Keiichiro / Ishizuka, Shogo / Ohshima, Takeshi / Ikari, Tetsuo et al. | 2004
- 1819
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Nanoscale FinFETs for low power applicationsRösner, W. / Landgraf, E. / Kretz, J. / Dreeskornfeld, L. / Schäfer, H. / Städele, M. / Schulz, T. / Hofmann, F. / Luyken, R.J. / Specht, M. et al. | 2004
- 1825
-
Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stressBernát, J. / Wolter, M. / Javorka, P. / Fox, A. / Marso, M. / Kordos̆, P. et al. | 2004
- 1829
-
An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implantsFathipour, Morteza / Fathi, Ehsanollah / Afzal, Behrouz / Khakifirooz, Ali et al. | 2004
- 1833
-
Maskless fabrication of JFETs via focused ion beamsDe Marco, Anthony J. / Melngailis, John et al. | 2004
- 1837
-
Novel polysilicon gate engineering with a laser thermal process for sub-40 nm CMOS devicesYamamoto, T. / Okabe, K. / Kubo, T. / Goto, K. / Morioka, H. / Wang, Y. / Lin, T. / Talwar, S. / Kase, M. / Sugii, T. et al. | 2004
- 1843
-
Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium Green's functionsFonseca, James / Kaya, Savas et al. | 2004
- 1849
-
Growth parameter dependence of gain compression in AlGaN/GaN HFETsFaraclas, Elias W. / Islam, Syed S. / Anwar, A.F.M. et al. | 2004
- 1855
-
Post-annealing effects on device performance of AlGaN/GaN HFETsLee, Jaesun / Liu, Dongmin / Kim, Hyeongnam / Lu, Wu et al. | 2004
- 1861
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A new edge termination technique for SiC power devicesHu, Shuntao / Sheng, Kuang et al. | 2004
- 1867
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A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphereDerenge, M.A. / Jones, K.A. / Kirchner, K.W. / Ervin, M.H. / Zheleva, T.S. / Hullavarad, S. / Vispute, R.D. et al. | 2004
- 1873
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Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopiesSakai, K. / Fukuyama, A. / Shigetomi, S. / Ikari, T. et al. | 2004
- 1877
-
Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)Hasanuzzaman, Md / Islam, Syed K. / Tolbert, Leon M. / Alam, Mohammad T. et al. | 2004
- 1883
-
Modeling C–V characteristics of deep sub-0.1 micron mesoscale MOS devicesGunther, Norman G. / Pesic, Iliya I. / Mutlu, Ayhan A. / Rahman, Mahmud et al. | 2004
- 1891
-
Wideband modeling technique for deep sub-micron MOSFETsChiou, Ming Hsiang / Hsu, Klaus Y.J. et al. | 2004
- 1897
-
On the scaling limits of low-frequency noise in SiGe HBTsJohansen, Jarle A. / Jin, Zhenrong / Cressler, John D. / Cui, Yan / Niu, Guofu / Liang, Qingqing / Rieh, Jae-Sung / Freeman, Greg / Ahlgren, Dave / Joseph, Alvin et al. | 2004
- 1901
-
Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressingSheng, S.R. / McAlister, S.P. / McCaffrey, J.P. / Kovacic, S.J. et al. | 2004
- 1907
-
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operationSudirgo, S. / Nandgaonkar, R.P. / Curanovic, B. / Hebding, J.L. / Saxer, R.L. / Islam, S.S. / Hirschman, K.D. / Rommel, S.L. / Kurinec, S.K. / Thompson, P.E. et al. | 2004
- 1911
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Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applicationsAckaert, Jan / Lowe, Antony / Boonen, Sylvie / Yao, Thierry / Rayhem, Joseph / Desoete, Bart / Prasad, Jagdish / Thomason, Mike / Van Houdt, Jan / Degraeve, Robin et al. | 2004
- 1917
-
A microstructural study of the CdTe/ZnTe film morphology as related to the Si substrate orientationSarney, W.L. / Brill, G. et al. | 2004
- 1921
-
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF performanceHackbarth, T. / Herzog, H.-J. / Hieber, K.-H. / König, U. / Mantl, S. / Holländer, B. / Lenk, St. / von Känel, H. / Enciso, M. / Aniel, F. et al. | 2004
- 1927
-
Device design for a raised extrinsic base SiGe bipolar technologyHaralson, Erik / Malm, Gunnar / Östling, Mikael et al. | 2004
- 1933
-
Blue electroluminescence from MOS capacitors with Si-implanted SiO2Matsuda, Toshihiro / Nishihara, Kiyoshi / Kawabe, Masaharu / Iwata, Hideyuki / Iwatsubo, Satoshi / Ohzone, Takashi et al. | 2004
- 1943
-
Scaling rules for SOI MOSFETs operating in the fully inverted modeHanajiri, T. / Niizato, M. / Aoto, K. / Toyabe, T. / Nakajima, Y. / Morikawa, T. / Sugano, T. et al. | 2004
- 1947
-
Beta engineering and circuit styles for SEU hardening PD-SOI SRAM cellsIoannou, Dimitris P. / Ioannou, Dimitris E. et al. | 2004
- 1953
-
A lateral structure for low-cost fabrication of COOLMOSTMShahrjerdi, Davood / Fathipour, Morteza / Hekmatshoar, Bahman / Khakifirooz, Ali et al. | 2004
- 1959
-
Design of MEMS-tunable novel monolithic optical filters in InP with horizontal bragg mirrorsDatta, Madhumita / Pruessner, Marcel W. / Kelly, Daniel P. / Ghodssi, Reza et al. | 2004
- 1965
-
Enhanced functionality in GaN and SiC devices by using novel processingPearton, S.J. / Abernathy, C.R. / Gila, B.P. / Ren, F. / Zavada, J.M. / Park, Y.D. et al. | 2004
- 1975
-
Drift dominated InP/GaP photodiodesSun, Yanning / Yulius, Aristo / Li, Guohua / Woodall, Jerry M. et al. | 2004
- 1981
-
AC performance of nanoelectronics: towards a ballistic THz nanotube transistorBurke, Peter J. et al. | 2004
- 1987
-
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, Shiyang / Yu, H.Y. / Chen, J.D. / Whang, S.J. / Chen, J.H. / Shen, Chen / Zhu, Chunxiang / Lee, S.J. / Li, M.F. / Chan, D.S.H. et al. | 2004
- 1993
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Transit times of SiGe:C HBTs using nonselective base epitaxyZerounian, Nicolas / Rodriguez, Manuel / Enciso, Mauro / Aniel, Frédéric / Chevalier, Pascal / Martinet, Bertrand / Chantre, Alain et al. | 2004
- 2001
-
Self-heating in multi-emitter SiGe HBTsMcAlister, S.P. / McKinnon, W.R. / Kovacic, S.J. / Lafontaine, H. et al. | 2004
- 2007
-
Noise in Metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTsWebster, Richard T. / Anwar, A.F.M. et al. | 2004
- 2013
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Ballistic transport at GHz frequencies in ungated HEMT structuresKang, Sungmu / Burke, Peter J. / Pfeiffer, L.N. / West, K.W. et al. | 2004
- 2019
-
Polyaniline/single-walled carbon nanotube composite electronic devicesRamamurthy, P.C. / Malshe, A.M. / Harrell, W.R. / Gregory, R.V. / McGuire, K. / Rao, A.M. et al. | 2004
- 2025
-
Study of ZnO nanocluster formation within styrene–acrylic acid and styrene–methacrylic acid diblock copolymers on Si and SiO2 surfacesAli, H.A. / Iliadis, A.A. / Lee, U. et al. | 2004
- 2031
-
A novel SONOS nonvolatile flash memory device using substrate hot-hole injection for write and gate tunneling for eraseWang, Y. / Zhao, Y. / Khan, B.M. / Doherty, C.L. / Krayer, J.D. / White, M.H. et al. | 2004
- 2035
-
Characterizing damage to ONO dielectrics induced during programming SONOS/NROMTM non-volatile semiconductor memory (NVSM) devicesWrazien, Stephen J. / Wang, Yu / Khan, Bilal M. / White, Marvin H. et al. | 2004
- 2041
-
Tunable CW-THz system with a log-periodic photoconductive emitterMendis, Rajind / Sydlo, Cezary / Sigmund, Jochen / Feiginov, Michael / Meissner, Peter / Hartnagel, Hans L. et al. | 2004
- 2047
-
A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETsSuligoj, Tomislav / Liu, Haitao / Sin, Johnny K.O. / Tsui, Kenneth / Chu, Rongming / Chen, Kevin J. / Biljanovic, Petar / Wang, Kang L. et al. | 2004
- 2051
-
A system-level analysis of Schottky diodes for incoherent THz imaging arraysBrown, E.R. et al. | 2004
- 2055
-
Modeling of nonvolatile floating gate quantum dot memoryHasaneen, El-Sayed / Heller, E. / Bansal, R. / Huang, W. / Jain, F. et al. | 2004
- 2061
-
Characterization of a MEMS BioChip for planar patch-clamp recordingPandey, Santosh / Mehrotra, Rajiv / Wykosky, Sherri / White, Marvin H. et al. | 2004
- 2067
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Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current densityPan, Janet L. / McManis, J.E. / Grober, L. / Woodall, J.M. et al. | 2004
- 2071
-
Interfacial oxide determination and chemical/electrical structures of HfO2/SiOx/Si gate dielectricsXie, L. / Zhao, Y. / White, M.H. et al. | 2004
- 2079
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Low-frequency noise characteristics of AlSb/InAsSb HEMTsKruppa, W. / Boos, J.B. / Bennett, B.R. / Tinkham, B.P. et al. | 2004
- 2085
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Dependence of film morphology on deposition rate in ITO/TPD/Alq3/Al organic luminescent diodesMu, Haichuan / Shen, Hui / Klotzkin, David et al. | 2004
- 2089
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Design and fabrication of Schottky diode, on-chip RF power detectorJeon, Woochul / Firestone, Todd M. / Rodgers, John C. / Melngailis, John et al. | 2004
- 2095
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Electrical parameters in highly doped strained n-Si1−xGex epilayers grown on Si substratesTsamakis, D. / Sargentis, Ch. / Kuznetsov, A.Yu. / Lampakis, D. et al. | 2004
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A modeling of the optical properties of the zinc oxide–zinc magnesium oxide double barrier systemKrokidis, G. / Xanthakis, J.P. / Iliadis, A.A. et al. | 2004