Direct deposition of aligned nanorod array onto cylindrical objects (English)
- New search for: Fan, J.-G.
- New search for: Fan, J.-G.
- New search for: Zhao, Y.-P.
In:
Journal of vacuum science and technology / B
;
23
, 3
; 947-953
;
2005
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ISSN:
- Article (Journal) / Print
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Title:Direct deposition of aligned nanorod array onto cylindrical objects
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Contributors:Fan, J.-G. ( author ) / Zhao, Y.-P.
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Published in:Journal of vacuum science and technology / B ; 23, 3 ; 947-953
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Publisher:
- New search for: Inst.
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Place of publication:New York, NY
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Publication date:2005
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.30 / 50.94 / 53.55 / 53.56
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Keywords:
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Source:
Table of contents – Volume 23, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 877
-
Review Article - Nanofabrication by scanning probe microscope lithography: A reviewTseng, Ampere A. et al. | 2005
- 895
-
Effect of thermal annealing on 120-nm-T-shaped-Ti-Pt-Au-gate AlGaN-GaN high electron mobility transistorsYamashita, Yoshimi et al. | 2005
- 900
-
Etching silicon-containing bilayer resists in ammonia-based plasmasPanda, Siddhartha et al. | 2005
- 908
-
Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectricLazzeri, P. et al. | 2005
- 918
-
Imaging patterns of intensity in topographically directed photolithographyPaul, Kateri E. et al. | 2005
- 926
-
Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayerPark, D.S. et al. | 2005
- 930
-
Nitrogen-incorporated multiwalled carbon nanotubes grown by direct current plasma-enhanced chemical vapor depositionYang, Ji Hoon et al. | 2005
- 934
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Fabrication of two- and three-dimensional photonic crystals of titania with submicrometer resolution by deep x-ray lithographyAwazu, Koichi et al. | 2005
- 940
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Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffractionToh, Suey Li et al. | 2005
- 947
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Direct deposition of aligned nanorod array onto cylindrical objectsFan, J.-G. et al. | 2005
- 954
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Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructuresNee, Tzer-En et al. | 2005
- 959
-
Ion beam sputter deposition of soft x-ray Mo-Si multilayer mirrorsSchubert, E. et al. | 2005
- 966
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Cross sections for the investigation of the electroluminescence excitation of InGaN-GaN quantum wells in blue light-emitting diodes with multiquantum barriersNee, Tzer-En et al. | 2005
- 970
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Millisecond microwave annealing: Driving microelectronics nanoThompson, Keith et al. | 2005
- 979
-
Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer depositionFuruya, Akira et al. | 2005
- 984
-
Fabrication and characterization of slanted nanopillars arrayFu, Yongqi et al. | 2005
- 990
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Enhancement of He-induced cavities in silicon by hydrogen plasma treatmentLiu, C.L. et al. | 2005
- 995
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Micro-nanotribological study of perfluorosilane SAMs for antistiction and low wearKasai, Toshi et al. | 2005
- 1004
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Photoreflectance characterization of InP-GaAsSb double-heterojunction bipolar transistor epitaxial wafersSugiyama, Hiroki et al. | 2005
- 1010
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High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layerBalakrishnan, G. et al. | 2005
- 1013
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Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layerLee, Jeong-Soo et al. | 2005
- 1018
-
Chemisorption of C60 on the Si(001)-2 X 1 surface at room temperatureCheng, C.-P. et al. | 2005
- 1024
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Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser depositionKao, C.J. et al. | 2005
- 1029
-
Effect of cerium concentration on the structural and ferroelectric properties of Bi4-xCexTi3O12 thin films for ferroelectric random access memoriesOh, Young-Nam et al. | 2005
- 1032
-
Integrated field effect transistors for microelectromechanical systems applications, modeling, and resultsYoung, Ralph W. et al. | 2005
- 1036
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Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W-WNx-poly-Si gate MOSFET for high density DRAM applicationsLim, Kwan-Yong et al. | 2005
- 1041
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Nanostructured carbon-metal composite filmsNarayan, Roger J. et al. | 2005
- 1047
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Growth and characterization of Si-doped self-assembled InAs quantum dotsNah, Jongbum et al. | 2005
- 1050
-
Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixingNie, D. et al. | 2005
- 1054
-
Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxyWicaksono, S. et al. | 2005
- 1060
-
Self-terminated oxide polish technique for the waveguide ridge laser diode fabricationPeng, Te-Chin et al. | 2005
- 1064
-
Improved high temperature growth of GaInNAsSb by molecular beam epitaxyMaranowski, K.D. et al. | 2005
- 1068
-
Lateral templating of self-organized ripple morphologies during focused ion beam milling of GeIchim, Stefan et al. | 2005
- 1072
-
Low resistance ohmic contact to p-type GaN using Pd-Ir-Au multilayer schemeBae, J.W. et al. | 2005
- 1076
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Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor depositionTakagi, S. et al. | 2005
- 1084
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Electron emission from boron nitride films deposited on patterned GaAs substratesShima, Hidekazu et al. | 2005
- 1088
-
Technology of polycrystalline diamond thin films for microsystems applicationsTang, Yuxing et al. | 2005
- 1096
-
Effect of a surface inhibition layer on line edge roughnessMa, Yuansheng et al. | 2005
- 1102
-
Brief Reports and Comments - Effect of imprinting pressure -on residual layer thickness in ultraviolet nanoimprint lithographyLee, Heon et al. | 2005
- 1107
-
Shop Notes - Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devicesBassim, N.D. et al. | 2005
- 1118
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Preface| 2005
- 1119
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Molecular beam epitaxy growth and characterization of mid-IR type-II "W" diode lasersCanedy, C.L. et al. | 2005
- 1125
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Growth of high optical quality InAs quantum dots in InAlGaAs-InP double heterostructuresZhang, Z.H. et al. | 2005
- 1129
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - High-performance 30-period quantum-dot infrared photodetectorChou, Shu-Ting et al. | 2005
- 1132
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Uniformly doped InAs-GaAs quantum-dot infrared photodetector structuresPal, D. et al. | 2005
- 1136
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Midinfrared InAs-InGaSb "W" diode lasers with digitally grown tensile-strained AlGaAsSb barriersLi, W. et al. | 2005
- 1140
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Regrown-emitter InP heterojunction bisucpolar transistorsKadow, C. et al. | 2005
- 1144
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Molecular beam epitaxy growth of high quantum efficiency InAs-GaSb superlattice detectorsSullivan, G.J. et al. | 2005
- 1149
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Optical properties of (GaSb)3n(AlSb)n (1<=n<=5) superlatticesChoi, S.G. et al. | 2005
- 1154
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As-In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxyKatoh, S. et al. | 2005
- 1158
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Much improved flat interfaces of InGaAs-AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxyImura, M. et al. | 2005
- 1162
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Molecular beam epitaxial growth of AlGaAs-InGaAs-GaAs planar superlattice structures on vicinal (111)B GaAs and their transport propertiesAkiyama, Y. et al. | 2005
- 1166
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Mismatched Epitaxy - Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleationLynch, C. et al. | 2005
- 1171
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Mismatched Epitaxy - Effect of micro-twin defects on InSb quantum wellsMishima, T.D. et al. | 2005
- 1174
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Recent developments in surface studies of GaN and AlNFeenstra, R.M. et al. | 2005
- 1181
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxyKim, Tong-Ho et al. | 2005
- 1186
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitridesWicks, G.W. et al. | 2005
- 1190
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN-GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substratesStorm, D.F. et al. | 2005
- 1194
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Influence of AlN nucleation layer on the epitaxy of GaN-AlGaN high electron mobility transistor structure and wafer curvatureTorabi, A. et al. | 2005
- 1199
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistorsHaffouz, S. et al. | 2005
- 1204
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Molecular beam epitaxy of InAlN-GaN heterostructures for high electron mobility transistorsKatzer, D.S. et al. | 2005
- 1209
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - UV-Visible Optoelectronics - Optical characterization and evaluation of the conduction band offset for ZnCdSe-ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxySohel, Mohammad et al. | 2005
- 1212
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on Zn1-xBexSe by molecular-beam epitaxyZhou, X. et al. | 2005
- 1217
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Self-assembled quantum-dot molecules by molecular-beam epitaxySuraprapapich, S. et al. | 2005
- 1221
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAsYakimov, Michael et al. | 2005
- 1226
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - GaAs buffer layer morphology and lateral distributions of InGaAs quantum dotsRoshko, A. et al. | 2005
- 1232
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Site-controlled InAs quantum dots on GaAs patterned using self-organized nano-channel alumina templateMeneou, K. et al. | 2005
- 1236
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emittersPerez-Paz, M.Noemi et al. | 2005
- 1240
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical propertiesOhmori, M. et al. | 2005
- 1243
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - 1.3 mm InAs quantum dots grown with an As2 source using molecular-beam epitaxySugaya, Takeyoshi et al. | 2005
- 1247
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Growth related interference effects in band edge thermometry of semiconductorsSacks, R.N. et al. | 2005
- 1252
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductorsKatzer, D.S. et al. | 2005
- 1257
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Inert gas maintenance for molecular-beam epitaxy systemsOye, Michael M. et al. | 2005
- 1262
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growthFastenau, J.M. et al. | 2005
- 1267
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Storage conditions for high-accuracy composition standards of AlGaAsBertness, K.A. et al. | 2005
- 1272
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there?Doolittle, W.Alan et al. | 2005
- 1277
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxyMurphy, T.E. et al. | 2005
- 1281
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxyOh, D.C. et al. | 2005
- 1286
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Selective growth of Zn- and 0-polar ZnO layers by plasma-assisted molecular beam epitaxyMinegishi, Tsutomu et al. | 2005
- 1291
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Depth profiling the electronic structures at HfO2-Si interface grown by molecular beam epitaxyLay, T.S. et al. | 2005
- 1294
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxyNovikov, S.V. et al. | 2005
- 1299
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Molecular beam epitaxial growth of Fe(Si1-xGex)2 epilayersCottier, R.J. et al. | 2005
- 1304
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Molecular-beam epitaxial growth and characterization of (In0.5Al0.5)1-xMnxAs-(In0.5 Ga0.5)1-xMnxAs: Thin films and superiatticesMaksimov, O. et al. | 2005
- 1308
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Structure and magnetic properties of Cr-doped GaNKim, J.J. et al. | 2005
- 1313
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Dielectric functions of molecular-beam-epitaxy-grown Ga1-xMnxAs thin filmsWeber, Z.J. et al. | 2005
- 1317
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Gas-source molecular-beam epitaxial growth of Ga(in)NP on GaP(100) substrates for yellow-amber light-emitting devicesOdnoblyudov, V.A. et al. | 2005
- 1320
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAsBank, S.R. et al. | 2005
- 1324
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Protecting wafer surface during plasma ignition using an arsenic capWistey, M.A. et al. | 2005
- 1328
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GainNAs grown by molecular beam epitaxyYuen, Homan B. et al. | 2005
- 1333
-
Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III-V dilute nitridesFotkatzikis, A. et al. | 2005
- 1337
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 mmBank, Seth R. et al. | 2005
- 1341
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - GaNAs(001) surface phases under growing conditionMori, Takahiro et al. | 2005
- 1345
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AUTHOR INDEX| 2005
- 1346
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CUMULATIVE AUTHOR INDEX| 2005