Conduction type and defect levels of b-FeSi2 films grown by MBE with different Si-Fe ratios (English)
- New search for: Seki, N.
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In:
Materials science in semiconductor processing
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6
, 5
; 307-310
;
2003
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ISSN:
- Article (Journal) / Print
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Title:Conduction type and defect levels of b-FeSi2 films grown by MBE with different Si-Fe ratios
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Contributors:
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Published in:Materials science in semiconductor processing ; 6, 5 ; 307-310
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Publisher:
- New search for: Pergamon, Elsevier Science
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Place of publication:Oxford [u.a.]
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Publication date:2003
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.56 / 53.56
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Table of contents – Volume 6, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 247
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PrefaceSuto, K. et al. | 2003
- 249
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Stoichiometry control and point defects in compound semiconductorsNishizawa, Jun-ichi et al. | 2003
- 253
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STM nanospectroscopic studies of individual As-antisite defects in GaAsMaeda, K. / Hida, A. / Iguchi, Y. / Mera, Y. / Fujiwara, T. et al. | 2003
- 257
-
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflectorGiehler, M. / Herfort, J. / Ploog, K.H. et al. | 2003
- 263
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ESR signature of tetra-interstitial defect in siliconMchedlidze, T. / Yonenaga, I. / Suezawa, M. et al. | 2003
- 267
-
X-ray excited spectroscopy of defects and impurities in compound semiconductorsTakeda, Y. et al. | 2003
- 273
-
Lifetime control by Fe doping in n-type siliconNishizawa, J. / Sasaki, T. et al. | 2003
- 277
-
Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type siliconTokuda, Yutaka / Sato, Hisanori et al. | 2003
- 281
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Amphoteric nature of vacancies in zinc blende semiconductorsChadi, D.J. et al. | 2003
- 285
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Control of Ga doping level in b-FeSi2 using Sn-Ga solventUdono, Haruhiko et al. | 2003
- 285
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Control of Ga doping level in β-FeSi2 using Sn–Ga solventUdono, Haruhiko / Matsumura, Kazutaka / Ohsugi, Isao J / Kikuma, Isao et al. | 2003
- 289
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Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTeSuto, K. / Nishizawa, J. / Yasuda, A. et al. | 2003
- 293
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Stoichiometry control of some II–VI ternary solid solutions during sublimation growthMochizuki, Katsumi et al. | 2003
- 297
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Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometryOyama, Yutaka / Nishizawa, Jun-ichi et al. | 2003
- 303
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Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulationKiessling, F.-M. / Neubert, M. / Rudolph, P. / Ulrici, W. et al. | 2003
- 307
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Conduction type and defect levels of b-FeSi2 films grown by MBE with different Si-Fe ratiosSeki, N. et al. | 2003
- 307
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Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratiosSeki, N. / Takakura, K. / Suemasu, T. / Hasegawa, F. et al. | 2003
- 311
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Nonstoichiometry and defects in III–V compoundsZlomanov, Vladimir P. et al. | 2003
- 315
-
Dopant diffusion in GaP and related compounds: recent results and new considerationsStolwijk, N.A. / Pöpping, J. et al. | 2003
- 319
-
Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphereKanno, R. / Wada, T. / Yamazaki, Y. / Wang, J. / Isshiki, M. / Iijima, Y. et al. | 2003
- 323
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The behaviour of in-diffused copper in n-type CdSnAs2Daunov, M.I / Ataev, B.M / Danilov, V.I / Magomedov, B.A et al. | 2003
- 327
-
Nonstoichiometry and solubility of impurity in In-doped PbTe films on Si substratesSamoylov, Alexander M / Buchnev, Sergey A / Dement’ev, Nikolay N / Synorov, Yury V / Zlomanov, Vladimir P et al. | 2003
- 335
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EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductorsSato, K. et al. | 2003
- 339
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Science and prospects for non-stoichiometry in dielectricsPei, Z. / Hwang, H.L. et al. | 2003
- 343
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Structure and optical properties of ZnSeO alloys with O composition up to 6.4%Nabetani, Y. / Mukawa, T. / Okuno, T. / Ito, Y. / Kato, T. / Matsumoto, T. et al. | 2003
- 347
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Device advantage of the dislocation-free pressure grown GaN substratesBoćkowski, M. / Porowski, S. et al. | 2003
- 351
-
Detailed analysis of absorption data for indium nitrideButcher, K.S.A. / Wintrebert-Fouquet, M. / Chen, P.P.-T. / Timmers, H. / Shrestha, S.K. et al. | 2003
- 355
-
Dislocation–impurity interaction in SiYonenaga, I et al. | 2003
- 359
-
Influence of pinning trap in Ti/4H–SiC Schottky barrier diodeOhtsuka, K. / Matsuno, Y. / Hase, Y. / Sugimoto, H. / Fujihira, K. / Tarui, Y. / Imaizumi, M. / Takami, T. / Ozeki, T. et al. | 2003
- 363
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Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damageNishizawa, Jun-ichi / Kurabayashi, Toru / Kanamoto, Kyozo / Yoshida, Takashi / Oizumi, Toru et al. | 2003
- 367
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Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation techniqueUedono, A. / Kiyohara, M. / Shimoyama, K. / Yamabe, K. / Ohdaira, T. / Suzuki, R. / Mikado, T. et al. | 2003
- 371
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Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphireSetiawan, A. / Ko, H.J. / Yao, T. et al. | 2003
- 375
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Properties of pulsed laser deposited vanadium oxide thin film thermistorkumar, R.T.Rajendra / Karunagaran, B. / Mangalaraj, D. / Narayandass, Sa.K. / Manoravi, P. / Joseph, M. et al. | 2003
- 379
-
EPR studies of native and impurity-related defects in II–IV–V2 semiconductorsGehlhoff, W. / Azamat, D. / Hoffmann, A. et al. | 2003
- 385
-
Nonstoichiometry and point defects in nonlinear optical crystals A2B4C25Voevodin, Valeriy G. / Grinyaev, Sergey N. / Voevodina, Olga V. et al. | 2003
- 389
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The magnetic properties in transition metal-doped chalcopyrite semiconductorsKamatani, T / Akai, H et al. | 2003
- 393
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Real structure of partially ordered crystalsKienle, L. / Oeckler, O. / Mattausch, Hj. / Duppel, V. / Simon, A. / Reiner, C. / Schlosser, M. / Xhaxhiu, K. / Deiseroth, H.J. et al. | 2003
- 397
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The one-step vacuum growth of high-quality CuInS2 thin film suitable for photovoltaic applicationsShao, Lexi / Chang, Kun-hui / Hwang, Huey-liang et al. | 2003
- 401
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Development of an intelligent design tool for non-stoichiometric compound devices: an exampleChang, H.H. / Ueng, H.Y. / Hwang, H.L. et al. | 2003
- 409
-
Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field modelIto, Y. / Nabetani, Y. / Kato, T. / Matsumoto, T. et al. | 2003
- 413
-
Etch pits observation and etching properties of b-FeSi2Udono, Haruhiko et al. | 2003
- 413
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Etch pits observation and etching properties of β-FeSi2Udono, Haruhiko / Kikuma, Isao et al. | 2003
- 417
-
Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junctionOhno, Takeo / Oyama, Yutaka / Suto, Ken / Nishizawa, Jun-ichi et al. | 2003
- 421
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Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuumOhno, Takeo / Oyama, Yutaka / Suto, Ken / Nishizawa, Jun-ichi et al. | 2003
- 425
-
Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxyOgawa, K. / Ofuchi, H. / Maki, H. / Sonoyama, T. / Inoue, D. / Tabuchi, M. / Takeda, Y. et al. | 2003
- 429
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Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxyNishizawa, Jun-ichi / Kurabayashi, Toru / Plotka, Piotr / Kikuchi, Hideyuki / Hamano, Tomoyuki et al. | 2003
- 433
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Increase of GaP green LED efficiency with pre-annealing of the substrateTanno, Takenori / Suto, Ken / Oyama, Yutaka / Nishizawa, Jun-ichi et al. | 2003
- 437
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Nonstoichiometric deep levels in Mg-doped GaP epitaxial layersTanno, Takenori / Suto, Ken / Oyama, Yutaka / Nishizawa, Jun-ichi et al. | 2003
- 441
-
Diffusion of nonstoichiometric defects in n-GaP crystalsTanno, Takenori / Suto, Ken / Oyama, Yutaka / Nishizawa, Jun-ichi et al. | 2003
- 445
-
Raman spectra of GaPAs–GaP heterostructure waveguidesTanabe, T. / Suto, K. / Kimura, T. / Ohtani, T. / Nishizawa, J. et al. | 2003
- 449
-
Interaction of electrical active intrinsic defects in Sn-doping Bi2Te3Zhitinskaya, M.K. / Nemov, S.A. / Svechnikova, T.E. et al. | 2003
- 453
-
Melt growth and stoichiometry control of (Cd1−xZnx)1+yTe single crystalsTakahashi, Junichi / Mochizuki, Katsumi et al. | 2003
- 457
-
Luminescent properties of ZnCdSe/ZnMnSe superlatticesFujita, Atsuki / Ota, Atsuya / Nakamura, Kazuhito / Nabetani, Yoichi / Kato, Takamasa / Matsumoto, Takashi et al. | 2003
- 461
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AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substratesKuno, T. / Akane, T. / Jinno, S. / Hirata, T. / Yang, Y. / Isogai, Y. / Watanabe, N. / Fujiwara, Y. / Nakamura, A. / Takeda, Y. et al. | 2003
- 465
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Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (001), (111)A,B and (110) surfacesKochiya, Toshio / Oyama, Yutaka / Suto, Ken / Nishizawa, Jun-ichi et al. | 2003
- 469
-
Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3Ofuchi, H. / Akane, T. / Jinno, S. / Kuno, T. / Hirata, T. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y. / Nakamura, A. et al. | 2003
- 473
-
SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)BHirata, T. / Akane, T. / Jinno, S. / Kuno, T. / Yang, Y. / Fujiwara, Y. / Nakamura, A. / Takeda, Y. et al. | 2003
- 477
-
Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxyOga, Ryo / Lee, Woo Sik / Yoshida, Yoshihiro / Fujiwara, Yasufumi / Takeda, Yoshikazu et al. | 2003
- 481
-
Comparative study of point defects induced in PbTe thin films doped with Ga by different techniquesSamoylov, Alexander M / Buchnev, Sergey A / Khoviv, Alexander M / Dolgopolova, Emma A / Zlomanov, Vladimir P et al. | 2003
- 487
-
Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVPYasuda, Arata / Suto, Ken / Nishizawa, Jun-ichi et al. | 2003
- 491
-
Non-stoichiometry and problem of heavy doping in semiconductor phasesRogacheva, E.I. et al. | 2003
- 497
-
Non-stoichiometry in SnTe thin films and temperature instabilities of thermoelectric propertiesRogacheva, E.I. / Nashchekina, O.N. / Tavrina, T.V. / Vekhov, Ye.O. / Sipatov, A.Yu. / Dresselhaus, M.S. et al. | 2003
- 503
-
High-energy photoemission spectroscopy of ferromagnetic Ga1−xMnxNKim, J.J. / Makino, H. / Chen, P.P. / Hanada, T. / Yao, T. / Kobayashi, K. / Yabashi, M. / Takata, Y. / Tokushima, T. / Miwa, D. et al. | 2003
- 507
-
Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetismZhao, J.H. / Matsukura, F. / Takamura, K. / Chiba, D. / Ohno, Y. / Ohtani, K. / Ohno, H. et al. | 2003
- 511
-
Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta dopingKojima, K. / Song, J.S. / Godo, K. / Oh, D.C. / Chang, J.H. / Cho, M.W. / Yao, T. et al. | 2003
- 515
-
N-type implantation doping of GaNNakano, Yoshitaka / Kachi, Tetsu / Jimbo, Takashi et al. | 2003
- 519
-
Polarity control of GaN epilayers grown on ZnO templatesSuzuki, Takuma / Ko, Hang-Ju / Setiawan, Agus / Kim, Jung-Jin / Saitoh, Koh / Terauchi, Masami / Yao, Takafumi et al. | 2003
- 523
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Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layersLeung, B.H. / Fong, W.K. / Surya, C. / Lu, L.W. / Ge, W.K. et al. | 2003
- 527
-
Characterizations of InxAlyGa1−x−yN alloy systems grown on GaN substrates by molecular-beam epitaxyIwata, S. / Kubo, S. / Konishi, M. / Saimei, T. / Kurai, S. / Taguchi, T. / Kainosho, K. / Yokohata, A. et al. | 2003
- 531
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Reduction of defect states of tantalum oxide thin films with additive elementsSalam, K.M.A. / Fukuda, Hisashi / Nomura, Shigeru et al. | 2003
- 535
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Epitaxial ZnO films grown by RF-assisted low-temperature CVD methodAtaev, B.M. / Mamedov, V.V. / Omaev, A.K. / Magomedov, B.A. et al. | 2003
- 539
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Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxyHarada, Chihiro / Ko, Hang-Ju / Makino, Hisao / Yao, Takafumi et al. | 2003
- 543
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Structural properties of V2O5 thin films prepared by vacuum evaporationRajendra Kumar, R.T. / Karunagaran, B. / Senthil Kumar, V. / Jeyachandran, Y.L. / Mangalaraj, D. / Narayandass, Sa.K. et al. | 2003
- 547
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Structural characterization of DC magnetron-sputtered TiO2 thin films using XRD and Raman scattering studiesKarunagaran, B. / Rajendra Kumar, R.T. / Senthil Kumar, V. / Mangalaraj, D. / Narayandass, Sa.K. / Mohan Rao, G. et al. | 2003
- 551
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Energy level of minority carrier trap centers induced by light illumination in B-doped Cz-Si solar cellsVu, Tuong Khanh / Ohshita, Yoshio / Yagi, Yasutaka / Kojima, Nobuaki / Yamaguchi, Masafumi et al. | 2003
- 555
-
Comparison of p+–n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristicsSrivastava, Ajay K. / Bhardwaj, Ashutosh / Ranjan, Kirti / Namrata / Chatterji, Sudeep / Shivpuri, R.K. et al. | 2003
- 561
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Realization of one-chip-two-wavelength light sourcesSong, J.S. / Cho, M.W. / Oh, D.C. / Makino, H. / Hanada, T. / Zhang, B.P. / Segawa, Y. / Song, H.S. / Cho, I.S. / Chang, J.H. et al. | 2003
- 567
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Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxyOh, D.C / Song, J.S / Chang, J.H / Takai, T / Hanada, T / Cho, M.W / Yao, T et al. | 2003