Contents of Applied Physics B Volume 56 number 4,April 1993 (English)
In:
Applied physics / A
;
56
, 4
; 5-290
;
1993
-
ISSN:
- Article (Journal) / Print
-
Title:Contents of Applied Physics B Volume 56 number 4,April 1993
-
Published in:Applied physics / A ; 56, 4 ; 5-290
-
Publisher:
- New search for: Springer
-
Place of publication:Berlin
-
Publication date:1993
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 51.00 / 33.60 / 53.09
- Further information on Basic classification
- New search for: 020/3475/3485
-
Keywords:
-
Classification:
BKL: 51.00 Werkstoffkunde: Allgemeines / 33.60 Kondensierte Materie: Allgemeines / 53.09 Werkstoffe der Elektrotechnik Local classification TIB: 020/3475/3485 -
Source:
Table of contents – Volume 56, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- A5
-
Forthcoming papers| 1993
- 5
-
Contents of Applied Physics B Volume 56 number 4,April 1993| 1993
- 291
-
The influence of the solubility limit on diffusion of as implants in siliconAntoncik, E. et al. | 1993
- 299
-
Microwave evaluation of the conductive filler particles of carbon black-rubber compositesKaiser, J. H. et al. | 1993
- 303
-
Manifestation of circular photogalvanic current by dynamic holography in BaTiO3Kukhtarev, N. / Dovgalenko, G. / Shultz, J. / Salamo, G. / Sharp, E. J. / Wechsler, B. A. / Klein, M. B. et al. | 1993
- 307
-
Formation of NaCl-type Cr carbide by carbon ion implantationWang, Jian / Chen, Xiangyi / Yang, Nan / Fang, Zhengzhi et al. | 1993
- 307
-
Formation of NaCI-Type Cr Carbide by Carbon lon ImplantationWang, J. et al. | 1993
- 311
-
Determination of the Li/Nb ratio in lithium niobate by means of birefringence and Raman measurementsSchlarb, U. / Klauer, S. / Wesselmann, M. / Betzler, K. / Wöhlecke, M. et al. | 1993
- 317
-
Characterization of solution-synthesized CdTe and HgTeMüllenborn, M. / Jarvis, R. F. Jr. / Yacobi, B. G. / Kaner, R. B. / Coleman, C. C. / Haegel, N. M. et al. | 1993
- 323
-
On the magnetic after-effect (MAE) in magnetite at high temperaturesCastro, J. / Rivas, J. et al. | 1993
- 329
-
Dendritic surface structures on excimer-laser irradiated PET foilsHeitz, J. / Arenholz, E. / Bäuerle, D. / Hibst, H. / Hagemeyer, A. / Cox, G. et al. | 1993
- 329
-
Dentritic Surface Structures on Excimer-Laser Irradiated PET FoilsHeitz, J. et al. | 1993
- 335
-
Effect of signal-modulated optical radiation on the characteristics of a ModfetMitra, H. / Singh, D. P. / Pal, B. B. et al. | 1993
- 343
-
Comparison of laser-induced etching behavior of III–V compound semiconductorsLee, C. / Sayama, H. / Takai, M. et al. | 1993
- 343
-
Comparison of Laser-lnduced Etching Behavior of III-V Compound SemiconductorsLee, C. et al. | 1993
- 349
-
Laser and thermal processing for Ti:LiNbO3 waveguide fabricationBertolotti, M. / Ferrari, A. / Cesare, J. P. / Chankin, A. V. / Lubnin, E. N. / Mikhailova, G. N. / Seferov, A. S. / Spiridonov, V. B. / Sychugov, V. A. / Dhaul, A. et al. | 1993
- 353
-
Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation techniqueChaudhari, G. N. / Rao, V. J. et al. | 1993
- 355
-
Reaction of Cu and Cl2 stimulated by synchrotron radiationLi, B. / Twesten, I. / Schwentner, N. et al. | 1993
- 365
-
Pulsed laser crystallization of hydrogen-free a-Si thin films for high-mobility poly-Si TFT fabricationFogarassy, E. / Prevot, B. / Unamuno, S. / Elliq, M. / Pattyn, H. / Mathe, E. L. / Naudon, A. et al. | 1993
- 375
-
Studies on the high-frequency properties of 〈111〉, 〈110〉 and 〈100〉 oriented GaAs IMPATT diodesPati, S. P. / Mukherjee, R. / Banerjee, J. P. / Roy, S. K. et al. | 1993
- 381
-
A Comparative Study of Magnetic Relaxation in YBa2Cu3-1Fe1O7-1 Single CrystalsLan, M.D. et al. | 1993
- 381
-
A comparative study of magnetic relaxation in YBa2Cu3−x Fe x O7−y single crystalsLan, M. D. / Liu, J. Z. / Shelton, R. N. et al. | 1993
- 385
-
Electron and ion beam induced heating effects in solids measured by laser interferometryKempf, J. / Nonnenmacher, M. / Wagner, H. H. et al. | 1993
- 391
-
Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samplesBohac, V. / D'Anna, E. / Leggieri, G. / Luby, S. / Luches, A. / Majkova, E. / Martino, M. et al. | 1993
- 397
-
Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAsIlg, M. / Eißler, D. / Lange, C. / Ploog, K. et al. | 1993
- 397
-
Surfactant-Mediated Molecular Beam Epitaxi of High-Quality (111)B-GaAsIlg, M. et al. | 1993
- 400
-
Characterization of MOVPE-Grown GaAs layers by C—V analysisPaskova, T. / Yakimova, R. / Valcheva, E. / Germanova, K. et al. | 1993