Bipolar Effects on the Signal Delay Time in HBT's at High Currents (English)
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In:
IEEE transactions on electron devices
;
40
, 1
; 44-48
;
1993
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ISSN:
- Article (Journal) / Print
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Title:Bipolar Effects on the Signal Delay Time in HBT's at High Currents
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Contributors:Zhou, H. ( author ) / Pulfrey, D.L.
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Published in:IEEE transactions on electron devices ; 40, 1 ; 44-48
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:1993
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
- Further information on Basic classification
- New search for: 770/5670
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Table of contents – Volume 40, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Note to Authors and ReviewersJindal, R.P. et al. | 1993
- 2
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Breakdown-Speed Considerations in InP-InGaAs Single- and Double-Heterostructure Bipolar TransistorsChau, H.F. et al. | 1993
- 9
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On the Speed and Noise Performance of Direct Ion-Implanted GaAs MESFET'sFeng, M. et al. | 1993
- 18
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High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFET's with Au/WSiN Z-shaped gateOnodera, Kiyomitsu / Nishimura, Kazumi / Asai, Kazuyoshi / Sugitani, Suchiro et al. | 1993
- 18
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High Microwave and Ultra-Low Noise Performance of Fully Ion-Implanted GaAs MESFET's with Au-WSiN T-Shaped GateOnodera, K. et al. | 1993
- 25
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AlGaAs-GaAs HBT's for 10-Gb-s IC's Using a New Base Ohmic Contact Fabrication ProcessKusano, C. et al. | 1993
- 32
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Determination of the Effective Channel Thickness of the MESFET's Based on Transconductance Parameter MeasurementMoon, B. / Helix, M. J. et al. | 1993
- 32
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Determination of the Effective Channel Thickness of the MESFET's Based on Transconductance Parameter b MeasurementMoon, B. et al. | 1993
- 32
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Determination of the effective channel thickness of the MESFET's based on transconductance parameter beta measurementMoon, Byung-Jong / Helix, M.J. et al. | 1993
- 35
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Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistor using two-dimensional numerical simulationLee L. Liou / Ebel, J.L. / Chern I. Hunag et al. | 1993
- 35
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Thermal Effects on the Characteristics of AlGaAs-GaAs Heterojunction Bipolar Transistors Using Two-Dimensional Numerical SimulationLiou, L.L. et al. | 1993
- 44
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Bipolar Effects on the Signal Delay Time in HBT's at High CurrentsZhou, H. et al. | 1993
- 49
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Field Inversion Generated in the CMOS Double-Metal Process Due to PETEOS and SOG InteractionsHsu, S.L. et al. | 1993
- 54
-
Effect of Fluorine Incorporation on the Thermal Stability of PtSi-Si StructureTsui, B.Y. et al. | 1993
- 64
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A Dual Color Basis Tunable Color EL Device Employing ZnS:Tb, F-ZnS:Mn Stacked Phosphor Layers with Color FiltersFukao, R. et al. | 1993
- 69
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Thermal Dissolution Ink Transfer for Full-Color PrintingOnishi, H. et al. | 1993
- 75
-
Effect of Oxide Thickness on the Properties of Metal-Insulator-Organic Semiconductor Photovoltaic CellsNevin, W.A. et al. | 1993
- 82
-
A Novel Ion Imager for Secondary Ion Mass SpectrometryMatsumoto, K. et al. | 1993
- 86
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Threshold Voltage Model for Deep-Submicrometer MOSFET'sLiu, Z.H. et al. | 1993
- 96
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AC versus DC Hot-Carrier Degradation in n-Channel MOSFET'sMistry, K.R. et al. | 1993
- 105
-
Analytical Model for High-Performance Shallow-Junction-Well Transistor (SJET) with a Fully Depleted Channel StructureMizuno, T. et al. | 1993
- 112
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High-Mobility Poly-Si Thin-Film Transistors Fabricated by a Novel Excimer Laser Crystallization MethodShimizu, K. et al. | 1993
- 112
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High-mobility poly-Si thin-film transistor fabricated by a novel excimer laser crystallization methodShimizu, Kazuhiro / Sugiura, Osamu / Matsumura, Masakiyo et al. | 1993
- 118
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Closed-Form Expressions for Interconnection Delay, Coupling, and Crosstalk in VLSI'sSakurai, T. et al. | 1993
- 118
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Closed-form expression for interconnection delay, coupling, and crosstalk in VLSI'sSakurai, Takayasu et al. | 1993
- 125
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Off-State Instabilities in Thermally Nitrided-Oxide n-MOSFET'sMa, Z.J. et al. | 1993
- 131
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Unified Quasi-Static MOSFET Capacitance ModelRho, K.M. et al. | 1993
- 137
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Threshold Voltage Modeling and the Subthreshold Regime of Operation of Short-Channel MOSFET'sFjeldly, T.A. et al. | 1993
- 146
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A Theoretical Model for the Current-Voltage Characteristics of a Floating-Gate EEPROM CellLiong, L.C. et al. | 1993
- 152
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The Characterization of Hot-Carrier Damage in p-Channel TransistorsDoyle, B.S. et al. | 1993
- 157
-
Transconductance and Mobility of Si:B Delta MOSFET'sWood, A.C.G. et al. | 1993
- 163
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Hot-Carrier Degradation of Submicrometer p-MOSFET's with Thermal-LPCVD Composite OxideLee, Y.H. et al. | 1993
- 169
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Temperature-Dependent Characteristics of BiCMOS Digital CircuitsRofail, S.S. et al. | 1993
- 179
-
A High-Speed 0.6-m 16K CMOS Gate Array on a Thin SIMOX FilmYamaguchi, Y. / Ishibashi, A. / Shimizu, M. / Nishimura, T. et al. | 1993
- 179
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A High-Speed 0.6-m m 16K CMOS Gate Array on a Thin SIMOX FilmYamaguchi, Y. et al. | 1993
- 179
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A high-speed 0.6-micron 16K CMOS gate array on a thin SIMOX filmYamaguchi, Yasuo / Ishibashi, Atsuhiko / Shimizu, Masahiro / Nishimura, T. / Tsukamoto, K. / Horie, Kazuo / Akasaka, Yoichi et al. | 1993
- 187
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Lateral Profiling of Oxide Charge and Interface Traps Near MOSFET JunctionsChen, W. et al. | 1993
- 197
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Series Resistance of Self-Aligned Silicided Source-Drain StructureTsui, B.Y. et al. | 1993
- 207
-
An Ultra-Shallow Buried-Channel PMOST Using Boron PenetrationPfiester, J.R. et al. | 1993
- 214
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A Study of Interband Tunneling Under Nonuniform Electric FieldChakraborty, P.K. et al. | 1993
- 220
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Modeling the Voltage Coefficient of Linear MOS CapacitorChen, H. S. / Tantasood, P. / Chen, H. Y. / Yeh, C. S. et al. | 1993
- 220
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Modeling the Voliage Coefficient of Linear MOS CapacitorChen, H.S. et al. | 1993
- 222
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Scaling of Small-Signal Equivalent Circuit Elements for GaInP-GaAs Hole-Barrier Bipolar Transistors (HBBT)Schaper, U. et al. | 1993
- 224
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Design Modeling of High-Efficiency p+-n Indium Phosphide Solar CellsJain, R.K. et al. | 1993
- 227
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Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout OperationWu, C.W. et al. | 1993
- 230
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Sixth Annual IEEE International ASIC Conference and Exhibit| 1993
- 231
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IEEE Copyright Form| 1993