High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2Sx solution (English)
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In:
Applied surface science
;
235
, 3
; 260-266
;
2005
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ISSN:
- Article (Journal) / Print
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Title:High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2Sx solution
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Contributors:
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Published in:Applied surface science ; 235, 3 ; 260-266
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2005
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 52.78 / 35.18 / 33.68
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- New search for: 535/3485
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Source:
Table of contents – Volume 235, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 237
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PrefaceSzuber, Jacek et al. | 2004
- 239
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Reactivity and control of III–V surfaces for passivation and Schottky barrier formationBruno, Giovanni et al. | 2004
- 249
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Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solutionAlperovich, V.L. / Tereshchenko, O.E. / Rudaya, N.S. / Sheglov, D.V. / Latyshev, A.V. / Terekhov, A.S. et al. | 2004
- 260
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High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2Sx solutionSuzuki, Y. / Sanada, N. / Shimomura, M. / Fukuda, Y. et al. | 2004
- 267
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Interaction of GaN epitaxial layers with atomic hydrogenLosurdo, M. / Giangregorio, M.M. / Capezzuto, P. / Bruno, G. / Namkoong, G. / Doolittle, W.A. / Brown, A.S. et al. | 2004
- 274
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Raman scattering from LO–phonon–plasmon coupled modes in Ag-coated GaN nanocrystalsBessolov, V.N. / Konenkova, E.V. / Zhilyaev, Yu.V. / Paez Sierra, B.A. / Zahn, D.R.T. et al. | 2004
- 279
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Semiconductor surface and interface passivation by cyanide treatmentKobayashi, H. / Takahashi, M. / Maida, O. / Asano, A. / Kubota, T. / Ivančo, J. / Nakajima, A. / Akimoto, K. et al. | 2004
- 293
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Self-organised wires and antiwires on semiconductor surfacesSrivastava, G.P. / Miwa, R.H. et al. | 2004
- 305
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Ab initio pseudopotential calculations for the electronic and geometric structures of hydrogen covered Si(114)-(2×1)Smardon, R.D. / Srivastava, G.P. et al. | 2004
- 305
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Ab initio pseudopotential calculations for the electronic and geometric structures of hydrogen covered Si(114)-(2x1)Smardon, R.D. et al. | 2005
- 313
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STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAsTeng, K.S. / Dunstan, P.R. / Wilks, S.P. / Williams, R.H. et al. | 2004
- 322
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Wet-chemical preparation and spectroscopic characterization of Si interfacesAngermann, H. / Henrion, W. / Rebien, M. / Röseler, A. et al. | 2004
- 340
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Simultaneous characterization of bulk impurities and interface states by photocurrent measurementsPolignano, M.L. / Caricato, A.P. et al. | 2004
- 351
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Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cellsPinčı́k, E. / Kobayashi, H. / Takahashi, M. / Fujiwara, N. / Brunner, R. / Glesková, H. / Jergel, M. / Müllerová, J. / Kučera, M. / Falcony, C. et al. | 2004
- 364
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X-ray and optical investigation of KCN and HCN passivated structures based on amorphous siliconPinčı́k, E. / Kobayashi, H. / Takahashi, M. / Fujiwara, N. / Brunner, R. / Jergel, M. / Kopáni, M. / Rusnák, J. et al. | 2004
- 372
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Removal of copper and nickel contaminants from Si surface by use of cyanide solutionsFujiwara, N. / Liu, Y.-L. / Nakamura, T. / Maida, O. / Takahashi, M. / Kobayashi, H. et al. | 2004
- 376
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Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurementsMizsei, J. / Shrair, J.A. / Zólomy, I. et al. | 2004
- 389
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Studies of GaAs metal–insulator–semiconductor structures by the admittance spectroscopy methodKochowski, S. / Nitsch, K. / Paszkiewicz, B. / Paszkiewicz, R. / Szydłowski, M. et al. | 2004
- I
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Author Index| 2003
- III
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Subject Index| 2003