An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing (English)
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In:
IEEE transactions on electron devices
;
41
, 4
; 539-545
;
1994
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ISSN:
- Article (Journal) / Print
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Title:An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing
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Contributors:
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Published in:IEEE transactions on electron devices ; 41, 4 ; 539-545
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:1994
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
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Keywords:
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Source:
Table of contents – Volume 41, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 465
-
Optimization of Gate-to-Drain Separation in Submicron Gate Length Modulation Doped FET's for Maximum Power Gain PerformanceChen, J.W. et al. | 1994
- 476
-
An Analysis of Space-Charge-Region Recombination in HBT'sSearles, S. et al. | 1994
- 484
-
Regional Monte Carlo Modeling of Electron Transport and Transit-Time Estimation in Graded-Base HBT'sZhou, X. et al. | 1994
- 491
-
Time Dependent Analysis of an Ion-Implanted GaAs OPFETPal, B. P. / Chattopadhyay, S. N. / Mishra, S. / Singh, S. et al. | 1994
- 491
-
Time Dependent Analysis of an lon-lmplanted GaAs OPFETPal, B.P. et al. | 1994
- 499
-
Dependence of Thin-Film Transistor Characteristics on the Deposition Conditions of Silicon Nitride and Amorphous SiliconMiyashita, H. et al. | 1994
- 504
-
Design of a Multi-Channel True Flat Fluorescent Lamp for Avionic AM-LCD BacklightingAnandan, M. et al. | 1994
- 511
-
Influences of MBE Growth Processes of Photovoltaic 3-5 m Intersubband PhotodetectorsLarkins, E. C. / Schneider, H. / Ehret, S. / Fleissner, J. et al. | 1994
- 511
-
Influences of MBE Growth Processes of Photovoltaic 3-5 mm Intersubband PhotodetectorsLarkins, E.C. et al. | 1994
- 511
-
Influences of MBE growth processes on photovoltaic 3-5 micron intersubband photodetectorsLarkins, E.C. / Schneider, H. / Ehret, S. / Fleißner, J. / Dischler, B. / Koidl, P. / Ralston, J.D. et al. | 1994
- 519
-
Transient Effects in Accumulation Mode p-Channel SOI MOSFET's Operating at 77KMartino, J.A. et al. | 1994
- 524
-
A Large-Bias Conduction Model of Polycrystalline Silicon FilmsDas, S. et al. | 1994
- 533
-
Annealing of Degraded npn-Transistors--Mechanisms and ModelingWurzer, H. et al. | 1994
- 539
-
An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current StressingTao, J. et al. | 1994
- 546
-
Electrical Characteristics of Rapid Thermal Nitrided-Oxide Gate n- and p-MOSFET's with Less Than I Atom% Nitrogen ConcentrationMomose, S. S. / Morimoto, T. / Ozawa, Y. / Yamabe, K. et al. | 1994
- 546
-
Electrical Characteristics of Rapid Thermal Nitrided-Oxide Gate n- and p-MOSFET's with Less Than 1 Atom% Nitrogen ConcentrationMomose, S.S. et al. | 1994
- 553
-
The Effect of Cosmic Rays on the Soft Error Rate of a DRAM at Ground LevelO'Gorman, T.J. et al. | 1994
- 558
-
A Self-Consistent Characterization Methodology for Schottky-Barrier Diodes and Ohmic ContactsLou, Y.-S. et al. | 1994
- 567
-
A New Linear Sweep Technique to Measure Generation Lifetimes in Thin-Film SOI MOSFET'sVenkatesan, S. et al. | 1994
- 575
-
Monte Carlo Simulation of Noise in GaAs Semiconductor DevicesAdams, J.G. et al. | 1994
- 582
-
Electron-Beam Controlled Switching Using Quartz and Polycrystalline ZnSJiang, W. et al. | 1994
- 587
-
The Poole-Frenkel Effect in 6H-SiC Diode CharacteristicsPelaz, L. et al. | 1994
- 592
-
A Detailed Investigation of Heterojunction Transport Using A Rigorous Solution to the Boltzmann EquationStettler, M.A. et al. | 1994
- 601
-
Efficient Ohmic Boundary Conditions for the Monte Carlo Simulation of Electron TransportWoolard, D.W. et al. | 1994
- 607
-
Selective Emission of Electrons from Patterned Negative Electron Affinity CathodesSantos, E.J.P. et al. | 1994
- 612
-
Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide-Nitride-Oxide Semiconductor Devices by Irradiation-Then-Anneal TreatmentsChang-Liao, K.-S. et al. | 1994
- 614
-
Temperature Dependence of Gate Forward Turn-on Voltage (Vf) of i-Al0.3Ga0.7As-n-GaAs HIGFET'sFutigami, N. et al. | 1994
- 616
-
Modeling Pentode-Like Characteristics of Recessed-Gate Static Induction TransistorStrollo, A.G.M. et al. | 1994
- 618
-
SiC MOS Interface CharacteristicsBrown, D.M. et al. | 1994
- 620
-
A Three Terminal InP-InGaAsP Optoelectronic ThyristorBuchwald, W.R. et al. | 1994
- 622
-
Elimination of Cross Sensitivity in a Three-Dimensional Magnetic SensorMisra, D. et al. | 1994
- 625
-
Reliability of SSPA's and TWTA'sStrauss, R. et al. | 1994
- 627
-
A Comment on "The GTCC Stored Charge Model"Heasell, E.L. et al. | 1994