Compound Semiconductor Devices - DC Characteristics of AlGaAs-GaAs-GaN HBTs Formed by Direct Wafer Fusion (English)
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In:
IEEE electron device letters
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28
, 1
; 8-10
;
2007
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ISSN:
- Article (Journal) / Print
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Title:Compound Semiconductor Devices - DC Characteristics of AlGaAs-GaAs-GaN HBTs Formed by Direct Wafer Fusion
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Contributors:
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Published in:IEEE electron device letters ; 28, 1 ; 8-10
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2007
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 28, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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EDITORIAL - What is in a Page Charge?Jindal, R.P. et al. | 2007
- 2
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Compound Semiconductor Devices - RF-Enhanced Contacts to Wide-Bandgap DevicesSimin, G. et al. | 2007
- 5
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Compound Semiconductor Devices - Power Stability of AlGaN-GaN HFETs at 20 W-mm in the Pinched-Off Operation ModeKoudymov, A. et al. | 2007
- 8
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Compound Semiconductor Devices - DC Characteristics of AlGaAs-GaAs-GaN HBTs Formed by Direct Wafer FusionLian, C. et al. | 2007
- 11
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Materials and Processing - Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi GateLiu, J. et al. | 2007
- 14
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Materials and Processing - Resistive Switching Mechanism in ZnxCd1-x Nonvolatile Memory DevicesWang, Z. et al. | 2007
- 17
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Materials and Processing - High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaSm2Ti4O12 Thin FilmJeong, Y.H. et al. | 2007
- 21
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Materials and Processing - Effect of F2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate DielectricChang, M. et al. | 2007
- 24
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Materials and Processing - High-k, Al2O3-HfTiO Nanolaminates With Less Than 0.8-nm Equivalent Oxide ThicknessMikhelashvili, V. et al. | 2007
- 27
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Materials and Processing - High-Quality Factor Electrolyte Insulator Silicon Capacitor for Wireless Chemical SensingGarcia-Canton, J. et al. | 2007
- 30
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Optoelectronics - Robust Coupled-Quantum-Well Structure for Use in Electrorefraction ModulatorsRistic, S. et al. | 2007
- 33
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Silicon Alloys and Thin Film Devices - On-Pixel Voltage-Controlled Oscillator in Amorphous-Silicon Technology for Digital Imaging ApplicationsSanaie, G. et al. | 2007
- 36
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Silicon Alloys and Thin Film Devices - Low-Frequency Noise Characteristics in Strained-Si nMOSFETsWang, Y.P. et al. | 2007
- 39
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Silicon Alloys and Thin Film Devices - A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source-Drain (SARSD)Chang, K.M. et al. | 2007
- 42
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Silicon Alloys and Thin Film Devices - HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass SubstratesKim, H. et al. | 2007
- 45
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Silicon and Elemental Semiconductor Devices - Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS DevicesYu, C. et al. | 2007
- 48
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Silicon and Elemental Semiconductor Devices - Long Retention of Gain-Cell Dynamic Random Access Memory With Undoped Memory NodeNishiguchi, K. et al. | 2007
- 51
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Silicon and Elemental Semiconductor Devices - Time-Domain-Reflectometry for Capacitance-Voltage Measurement With Very High Leakage CurrentWang, Y. et al. | 2007
- 54
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Silicon and Elemental Semiconductor Devices - Threshold Current for the Onset of Kirk Effect in Bipolar Transistors With a Fully Depleted Nonuniformly Doped CollectorToorn, R.van der et al. | 2007
- 58
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Silicon and Elemental Semiconductor Devices - Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High (-1.5 GPa) Channel StressSuthram, S. et al. | 2007
- 62
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Silicon and Elemental Semiconductor Devices - Electrical Characterization Of ZrO2-Si Interface Properties in MOSFETs With ZrO2 Gate DielectricsLiu, C.-H. et al. | 2007
- 65
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Silicon and Elemental Semiconductor Devices - Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)Abelein, U. et al. | 2007
- 68
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Silicon and Elemental Semiconductor Devices - Bond Pad Design With Low Capacitance in CMOS Technology for RF ApplicationsHsiao, Y.-W. et al. | 2007
- 71
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Silicon and Elemental Semiconductor Devices - A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) SurfaceSong, G. et al. | 2007
- 74
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IEEE ELECTRON DEVICES SOCIETY MEETINGS CALENDAR| 2007
- 76
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Information for Authors| 2007
- 77
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Device Technologies and Circuit Techniques for Power Management| 2007
- 79
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ANNOUNCEMENTS - Call for Papers -- IEEE Compound Semiconductor IC Symposium (CSICS)| 2007