Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy (English)
- New search for: Kobayashi, Y.
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In:
Journal of crystal growth
;
298
, 1
; 325-327
;
2007
-
ISSN:
- Article (Journal) / Print
-
Title:Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy
-
Contributors:
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Published in:Journal of crystal growth ; 298, 1 ; 325-327
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2007
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ISSN:
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ZDBID:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 38.31 / 33.61 / 35.90
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Keywords:
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Table of contents – Volume 298, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Editorial IntroductionOnabe, Kentaro et al. | 2007
- 2
-
Fundamental chemistry and modeling of group-III nitride MOVPERandall Creighton, J. et al. | 2007
- 8
-
In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxyPristovsek, M. et al. | 2007
- 12
-
Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurementTabuchi, M. et al. | 2007
- 18
-
MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopyKrahmer, C. et al. | 2007
- 23
-
AlGaInP growth parameter optimisation during MOVPE for opto-electronic devicesZorn, M. et al. | 2007
- 28
-
Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxyDécobert, J. et al. | 2007
- 32
-
Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanismSong, Haizheng et al. | 2007
- 37
-
Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxyShioda, T. et al. | 2007
- 41
-
Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPEOno, Kenichi et al. | 2007
- 46
-
Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopyKaspari, Christian et al. | 2007
- 50
-
In situ monitoring of the growth procedure of InAs layer by spectral reflectanceAhn, Eungjin et al. | 2007
- 54
-
Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfacesBork, T. et al. | 2007
- 59
-
Reactor-scale uniformity of selective-area performance in InGaAsP systemOnitsuka, Ryusuke et al. | 2007
- 64
-
Compound semiconductors grown on porous alumina substrate as a novel hydrogen permeation membraneSato, Michio et al. | 2007
- 69
-
Effect of Li doping on photoluminescence from Er, O-codoped GaAsUki, D. et al. | 2007
- 73
-
Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxyEndo, Y. et al. | 2007
- 76
-
Role of the V–III ratio and growth rate in decomposition of In0.27Ga0.73P-GaP grown by MOVPENovák, J. et al. | 2007
- 81
-
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPERodriguez, Philippe et al. | 2007
- 85
-
High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device propertiesIchikawa, O. et al. | 2007
- 90
-
Atomic layer epitaxy of MnAs on GaAs(001)Ozeki, M. et al. | 2007
- 94
-
Selective area etching of InP with CBr4 in MOVPEEbert, C. et al. | 2007
- 98
-
Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)-GaP material systemOberhoff, S. et al. | 2007
- 103
-
MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)Nakajima, F. et al. | 2007
- 107
-
Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPEPanpech, P. et al. | 2007
- 111
-
Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxyKongjaeng, Pornsiri et al. | 2007
- 116
-
Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPEIshizuka, Takashi et al. | 2007
- 121
-
MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrateKunert, B. et al. | 2007
- 126
-
Influence of annealing on the optical and structural properties of dilute N-containing III-V semiconductor heterostructuresVolz, K. et al. | 2007
- 131
-
Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloysTanioka, K. et al. | 2007
- 135
-
Substrate-surface orientation dependence of N content in MOVPE growth of GaAsN films on GaAsOno, W. et al. | 2007
- 140
-
Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxationKlangtakai, Pawinee et al. | 2007
- 145
-
Optical investigations on the surfactant effects of Sb on InGaAsN multiple quantum wells grown by MOVPEChen, W.C. et al. | 2007
- 150
-
Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxySanorpim, Sakuntam et al. | 2007
- 154
-
Growth of strained GaAs1− y Sb y layers using metalorganic vapor phase epitaxyKhandekar, A.A. et al. | 2007
- 159
-
Segregation and desorption of antimony in InP (001) in MOVPEWeeke, S. et al. | 2007
- 163
-
Electrical properties of undoped and doped MOVPE-grown InAsSbKrug, T. et al. | 2007
- 168
-
Bubbler for constant vapor delivery of a solid chemicalAndre, C.L. et al. | 2007
- 172
-
Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPEShenai, Deo V. et al. | 2007
- 176
-
Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductorsShenai-Khatkhate, Deodatta V. et al. | 2007
- 181
-
On the pyrophoricity, safety, and handling of metalorganic chemicalsAndre, C.L. et al. | 2007
- 186
-
Systematic theoretical investigations of compositional inhomogeneity in In x Ga1− x N thin films on GaN(0001)Ito, Tomonori et al. | 2007
- 190
-
Analysis of compositional instability of InGaN by Monte Carlo simulationKangawa, Yoshihiro et al. | 2007
- 193
-
Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substratesOnuma, T. et al. | 2007
- 198
-
GaN growth on 150-mm-diameter (111) Si substratesUbukata, Akinori et al. | 2007
- 202
-
Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurementsBrunner, F. et al. | 2007
- 207
-
Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPEHikosaka, Toshiki et al. | 2007
- 211
-
Influence of V-III flux ratio on electrical properties of AlInGaN-Gan heterostructures grown by MOCVDYu, Tongjun et al. | 2007
- 215
-
High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPEKato, N. et al. | 2007
- 219
-
Growth and characterization of 380-nm InGaN-AlGaN LEDs grown on patterned sapphire substratesHorng, R.H. et al. | 2007
- 223
-
Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPEKomiyama, Jun et al. | 2007
- 228
-
Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor depositionLiu, Chengxiang et al. | 2007
- 232
-
Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPEHoshino, K. et al. | 2007
- 235
-
Effects of doping on the crystalline quality and composition distribution in InGaN-GaN structure grown by MOCVDRan, Junxue et al. | 2007
- 239
-
Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic sourceFong, W.K. et al. | 2007
- 243
-
In situ X-ray diffraction during MOCVD of III-nitrides: An optimized wobbling compensating evaluation algorithmSimbrunner, C. et al. | 2007
- 246
-
Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVDHung, H. et al. | 2007
- 251
-
An investigation of thermal conductivity of nitride-semiconductor nanostructures by molecular dynamics simulationKawamura, Takahiro et al. | 2007
- 254
-
Room temperature ferromagnetism of GaN:Mn thin films grown by low pressure metal-organic chemical vapor deposition by mn periodic delta-dopingChen, Z.T. et al. | 2007
- 257
-
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layersImura, Masataka et al. | 2007
- 261
-
Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substratesKawashima, T. et al. | 2007
- 265
-
Epitaxial lateral overgrowth of Al x Ga1− x N (x>0.2) on sapphire and its application to UV-B-light-emitting devicesIida, Kazuyoshi et al. | 2007
- 268
-
Growth of low dislocation density GaN using transition metal nitride masking layersMoram, M.A. et al. | 2007
- 272
-
Dislocation analysis in homoepitaxial GaInN-GaN light emitting diode growthDetchprohm, T. et al. | 2007
- 276
-
Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep techniqueLang, T. et al. | 2007
- 281
-
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVDLiu, Zhe et al. | 2007
- 284
-
TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN templateKuwano, N. et al. | 2007
- 288
-
Microstructure in nonpolar m-plane GaN and AlGaN filmsNagai, T. et al. | 2007
- 293
-
Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxyKusakabe, Kazuhide et al. | 2007
- 297
-
Inversion domains in AlGaN films grown on patterned sapphire substrateKawamichi, Shuichi et al. | 2007
- 300
-
Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVDSumiyoshi, Kazuhide et al. | 2007
- 305
-
Investigation of surface defect structure originating in dislocations in AlGaN-GaN epitaxial layer grown on a Si substrateSasaki, Hitoshi et al. | 2007
- 310
-
Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrateTaniyasu, Yoshitaka et al. | 2007
- 316
-
BGaN materials on GaN-sapphire substrate by MOVPE using N2 carrier gasOugazzaden, A. et al. | 2007
- 320
-
BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphireAkasaka, Tetsuya et al. | 2007
- 325
-
Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxyKobayashi, Y. et al. | 2007
- 328
-
Growth of AlN by vectored flow epitaxyClayton, A.J. et al. | 2007
- 332
-
MOVPE-like HVPE of AlN using solid aluminum trichloride sourceEriguchi, Ken-ichi et al. | 2007
- 336
-
Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVDTakeuchi, M. et al. | 2007
- 341
-
Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayersPan, Yaobo et al. | 2007
- 345
-
Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN-GaN) multi-buffer layerNiikura, E. et al. | 2007
- 349
-
Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modificationOkada, N. et al. | 2007
- 354
-
Effect of AlN interlayer on incorporation efficiency of Al composition in AlGaN grown by MOVPEQin, Z.X. et al. | 2007
- 357
-
The template effects on AlN-Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVDLiu, B. et al. | 2007
- 361
-
Aluminum incorporation in -layers and implications for growth optimizationRossow, U. et al. | 2007
- 367
-
Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor depositionSong, Dong Woo et al. | 2007
- 372
-
Influence of growth conditions on Al incorporation to Al x Ga1− x N (x>0.4) grown by MOVPELi, Da-Bing et al. | 2007
- 375
-
The reactive ion etching characteristics of AlGaN-GaN SLs and etch-induced damage study of n-GaN using Cl2-SiCl4-Ar plasmaLi, Rui et al. | 2007
- 379
-
Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor depositionSato, Ayumu et al. | 2007
- 383
-
Structural and spectroscopic properties of AlN layers grown by MOVPEThapa, S.B. et al. | 2007
- 387
-
Influence of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor-phase epitaxyMurakami, Hisashi et al. | 2007
- 390
-
A new photocatalyzer InN x O y film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200°C)Yamamoto, A. et al. | 2007
- 394
-
Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxyShen, W.Z. et al. | 2007
- 399
-
Electrical and optical properties of MOVPE InN doped with Mg using CP2MgYamamoto, A. et al. | 2007
- 403
-
Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactorKadir, Abdul et al. | 2007
- 409
-
The high mobility InN film grown by MOCVD with GaN buffer layerXie, Z.L. et al. | 2007
- 413
-
Influence of the reactor inlet configuration on the AlGaN growth efficiencyYakovlev, E.V. et al. | 2007
- 418
-
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactorsDauelsberg, M. et al. | 2007
- 425
-
An inverse-flow showerhead MOVPE reactor designZuo, Ran et al. | 2007
- 428
-
GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3Gautier, S. et al. | 2007
- 433
-
Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gasesFukuda, Yasushi et al. | 2007
- 437
-
Effects of dopant transport rate upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorusTanaka, Tooru et al. | 2007
- 441
-
Low-pressure metalorganic vapor phase epitaxy growth of ZnTeKume, Yusuke et al. | 2007
- 445
-
Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxyKume, Yusuke et al. | 2007
- 449
-
Growth characteristics of ZnMgTe layer on ZnTe substrate by metalorganic vapor phase epitaxySaito, Katsuhiko et al. | 2007
- 453
-
MOVPE growth, and magnetic and crystallographic studies of Zn1− x V x SeTahashi, Masahiro et al. | 2007
- 457
-
Homoepitaxial growth of non-polar ZnO films on off-angle ZnO substrates by MOCVDAbe, T. et al. | 2007
- 461
-
Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrateChao, Yen-Cheng et al. | 2007
- 464
-
Crystal growth of ZnO on Si(111) by metalorganic vapor phase epitaxyMoriyama, Takumi et al. | 2007
- 468
-
Mg x Zn1− x O films grown by remote-plasma-enhanced MOCVD with EtCp2MgYamamoto, K. et al. | 2007
- 472
-
Atomic layer deposition of epitaxial ZnO on GaN and YSZLin, Chih-Wei et al. | 2007
- 477
-
Comparison of non-polar ZnO films deposited on single crystal ZnO and sapphire substratesKashiwaba, Y. et al. | 2007
- 481
-
Properties of ZnO epitaxial layers and polycrystalline films prepared by metalorganic molecular beam epitaxial apparatus using diethylzinc and water as precursorsTerasako, Tomoaki et al. | 2007
- 486
-
P-type nitrogen-doped ZnO thin films on sapphire substrates by remote-plasma-enhanced metalorganic chemical vapor depositionGangil, Sandip et al. | 2007
- 491
-
Growth of nitrogen-doped ZnO films by MOVPE using diisopropylzinc and tertiary-butanolSenthil Kumar, O. et al. | 2007
- 495
-
Single-phase Pb(Zn1-3Nb2-3)O3 thin films grown by metalorganic chemical vapor deposition: Effects of growth sequence and substratesNishida, Ken et al. | 2007
- 500
-
Influence of growth interruption and Si doping on the structural and optical properties of Al x GaN-AlN (x>0.5) multiple quantum wellsLi, Da-Bing et al. | 2007
- 504
-
Optical and micro-structural properties of high photoluminescence efficiency InGaN-AlInGaN quantum well structuresZhu, D. et al. | 2007
- 508
-
MOVPE growth of InGaN-GaN multiple quantum wells for the blue laser diode applicationsCheng, A.T. et al. | 2007
- 511
-
InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterizationZhou, Hailong et al. | 2007
- 515
-
Flat-band potentials of GaN and InGaN-GaN QWs by bias-dependent photoluminescence in electrolyte solutionKobayashi, Naoki et al. | 2007
- 518
-
Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase epitaxyOhno, Akihito et al. | 2007
- 522
-
The influence of internal electric fields on the transition energy of InGaN-gaN quantum wellGuo, Lunchun et al. | 2007
- 527
-
Spectroscopic investigations of MOVPE-grown InGaAs-GaAs quantum wells with low and high built-in strainSharma, T.K. et al. | 2007
- 531
-
Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN-GaP lattice-matched single quantum well structures grown by MOVPEKaewket, Dares et al. | 2007
- 536
-
Comparison of and as carrier gas in MOVPE growth of InGaAsN quantum wellsReentilä, O. et al. | 2007
- 540
-
Optical characterization of improvement of carrier localization in InGaAsN-GaAs single quantum wells by addition of Sb flux to interfacesIguchi, Y. et al. | 2007
- 544
-
MOVPE and characterization of InAsN-GaAs multiple quantum wellsKuboya, S. et al. | 2007
- 548
-
Effect of antimony on the density of InAs-Sb:GaAs(100) quantum dots grown by metalorganic chemical-vapor depositionGuimard, Denis et al. | 2007
- 553
-
Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs-InGaAsP-InP (100) quantum dotsAnantathanasarn, S. et al. | 2007
- 558
-
Controlling shape of InAs1− x Sb x quantum structures on InP for quantum dots with 1.55-μm emissionKawaguchi, Kenichi et al. | 2007
- 562
-
Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrateOkawa, Tatsuya et al. | 2007
- 567
-
Epitaxy of multimodal InAs-GaAs quantum dot ensemblesPötschke, Konstantin et al. | 2007
- 570
-
Lateral shape of InAs-GaAs quantum dots in vertically correlated structuresHospodková, A. et al. | 2007
- 574
-
Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layerSuzuki, R. et al. | 2007
- 578
-
Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask arrayYamauchi, Y. et al. | 2007
- 582
-
Properties of MOVPE InAs-GaAs quantum dots overgrown by InGaAsHospodková, A. et al. | 2007
- 586
-
Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs-InP quantum dotsBansal, Bhavtosh et al. | 2007
- 591
-
MOCVD of InGaAs-GaAs quantum dots for lasers emitting close to 1.3μmGermann, T.D. et al. | 2007
- 595
-
Red to green photoluminescence of InP-quantum dots in InPRoßbach, R. et al. | 2007
- 599
-
Green photoluminescence of single InP-quantum dots grown on InP-AlInP distributed Bragg reflectorsRoßbach, R. et al. | 2007
- 603
-
Vertical asymmetric double quantum dotsRoßbach, R. et al. | 2007
- 607
-
Growth and characterisation of GaAs-InGaAs-GaAs nanowhiskers on (111) GaAsRegolin, I. et al. | 2007
- 612
-
Self-assembled formation of ferromagnetic MnAs nanoclusters on GaInAs-InP (111) B layers by metal-organic vapor phase epitaxyHara, Shinjiroh et al. | 2007
- 616
-
Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPEIkejiri, Keitaro et al. | 2007
- 620
-
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursorPaiano, P. et al. | 2007
- 625
-
MOVPE growth and real structure of vertical-aligned GaAs nanowiresBauer, J. et al. | 2007
- 631
-
InAs nanowires grown by MOVPEDick, Kimberly A. et al. | 2007
- 635
-
The structure of 〈111〉B oriented GaP nanowiresJohansson, Jonas et al. | 2007
- 640
-
Catalyst-free fabrication of InP and InP(N) nanowires by metalorganic vapor phase epitaxyMattila, M. et al. | 2007
- 644
-
Growth of highly uniform InAs nanowire arrays by selective-area MOVPETomioka, K. et al. | 2007
- 648
-
nano- and microtubes fabricated on (110)-oriented GaAs- and GaP-substrate using the metal-organic vapor-phase epitaxyPaetzelt, H. et al. | 2007
- 652
-
MOVPE growth optimization for laser diodes with highly strained InGaAs MQWsBugge, F. et al. | 2007
- 658
-
Evaluation of incorporation efficiency of group V source gases in metal organic chemical vapor deposition of GaInNAs for high quality 1.21μm quantum-well ridge wave guide lasersKushibe, Mitsuhiro et al. | 2007
- 663
-
Low threshold InP-AlGaInP on GaAs QD laser emitting at ∼740nmKrysa, A.B. et al. | 2007
- 667
-
High-power red laser diodes grown by MOVPEZorn, M. et al. | 2007
- 672
-
Selective-area MOVPE growth for 10Gbit-s electroabsorption modulator integrated with a tunable DBR laserKim, Sung-Bock et al. | 2007
- 676
-
Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPEYoshioka, Taichi et al. | 2007
- 682
-
Low current operation of GaN-based blue-violet laser diodes fabricated on sapphire substrate using high-temperature-grown single-crystal AlN buffer layerOhba, Yasuo et al. | 2007
- 687
-
GaN-AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor depositionHuang, G.S. et al. | 2007
- 691
-
High reflectivity AlGaN-AlN DBR mirrors grown by MOCVDXie, Z.L. et al. | 2007
- 695
-
Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN-sapphireLee, Sung-Nam et al. | 2007
- 699
-
Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etchingCheong, H.S. et al. | 2007
- 703
-
Studies of improving light extraction efficiency of high power blue light-emitting diode by photo-enhanced chemical etchingFang, H. et al. | 2007
- 706
-
Semipolar GaN-GaInN LEDs with more than 1mW optical output powerNeubert, B. et al. | 2007
- 710
-
Increased power from deep ultraviolet LEDs via precursor selectionMoe, C. et al. | 2007
- 714
-
The effect of high temperature on the optical properties of InGaN-GaN blue light-emitting diodes with multiquantum barriersNee, Tzer-En et al. | 2007
- 719
-
Influences of laser lift-off process on the performances of large-area light-emitting diodesHu, C.Y. et al. | 2007
- 722
-
High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting applicationTran, Chuong Anh et al. | 2007
- 725
-
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substratesZhang, Baoshun et al. | 2007
- 731
-
The origins of double emission peaks in electroluminescence spectrum from InGaN-GaN MQW LEDChen, Z.Z. et al. | 2007
- 736
-
Integrated light-emitting diodes grown by MOVPE for flat panel displaysHonda, Tohru et al. | 2007
- 740
-
The effect of InGaN-GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiencySuihkonen, S. et al. | 2007
- 744
-
GaN UV photodetector by using transparency antimony-doped tin oxide electrodeTu, Ming-Lung et al. | 2007
- 748
-
Using MOVPE growth to generate tomorrow's solar electricityKurtz, Sarah et al. | 2007
- 754
-
Strain-balanced MQW pin solar cells grown using a robot-loading showerhead reactorRoberts, J.S. et al. | 2007
- 758
-
Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cellsMols, Y. et al. | 2007
- 762
-
Improvements in the MOVPE growth of multi-junction solar cells for very high concentrationRey-Stolle, I. et al. | 2007
- 767
-
Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cellsWu, Pei-Hsuan et al. | 2007
- 772
-
On the development of high-efficiency thin-film GaAs and GaInP2 cellsvan Deelen, J. et al. | 2007
- 777
-
Growth of an InGaAs-GaAsSb tunnel junction for an InP-based low band gap tandem solar cellSeidel, U. et al. | 2007
- 782
-
Photovoltaic properties of multilayer organic thin filmsInoue, Junichi et al. | 2007
- 787
-
Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN-InGaN-GaN double heterojunction bipolar transistorsKumakura, K. et al. | 2007
- 791
-
MOCVD-grown high-mobility Al0.3Ga0.7N-AlN-GaN HEMT structure on sapphire substrateWang, Xiaoliang et al. | 2007
- 794
-
Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant propertiesGarcía, I. et al. | 2007
- 800
-
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayerFang, Cebao et al. | 2007
- 804
-
Investigation on the different barrier effect of Ni and Pt in the Ti-Al-Pt-Au and Ti-Al-Ni-Au contacts to n-type GaNHu, C.Y. et al. | 2007
- 808
-
Ohmic contact mechanism of Ni-Au contact to p-type GaN studied by Rutherford backscattering spectrometryHu, C.Y. et al. | 2007
- 811
-
Effect of growth conditions on electrical properties of Mg-doped p-GaNSvensk, O. et al. | 2007
- 815
-
Vertical conductivity of p-Al x Ga1− x N-GaN superlattices measured with modified transmission line modelHu, C.Y. et al. | 2007
- 819
-
Low-resistance graded Al x Ga1− x N buffer layers for vertical conducting devices on n-SiC substratesNishikawa, Atsushi et al. | 2007
- 822
-
AlGaN-GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4Cheng, Kai et al. | 2007
- 826
-
In situ epitaxial surface passivation of GaAlN-GaN HEMT heterostructures grown by LP-MOCVDdi Forte Poisson, M.-A. et al. | 2007
- 831
-
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN-GaN HFETs on 4-in Si substrates by MOVPEKato, Sadahiro et al. | 2007
- 835
-
AlGaN-AlN-GaN-SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVDWang, Xiaoliang et al. | 2007
- 840
-
High-resolution X-ray diffraction study of laser lift-off AlGaN-GaN HEMTs grown by MOCVD methodLeung, K.K. et al. | 2007
- 843
-
MOVPE, processing and characterization of AlGaN-GaN HEMTs with different Al concentrations on silicon substratesFieger, M. et al. | 2007
- 848
-
DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVDCheng, A.T. et al. | 2007
- 852
-
High current gain graded GaN-InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor depositionChung, T. et al. | 2007
- 857
-
High current gain stability of carbon-doped p-GaAs in InGaP-GaAs heterojunction bipolar transistorsYamada, Hisashi et al. | 2007
- 861
-
Correlation between the base–emitter interface crystalline quality and the current gain in InGaP-GaAs HBTs grown by MOVPEUchida, Kazuo et al. | 2007
- 867
-
InP buried growth of SiO2 wires toward reduction of collector capacitance in HBTMiyamoto, Yasuyuki et al. | 2007
- 871
-
High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substratesHashimoto, S. et al. | 2007
- 875
-
High-breakdown-voltage pn-junction diodes on GaN substratesYoshizumi, Yusuke et al. | 2007
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Editorial Board| 2007
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Subject Index ICMOVPE XIII| 2007
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Instructions to Authors| 2007
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Author Index ICMOVPE XIII| 2007
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Contents ICMOVPE XIII| 2007