ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVD (English)
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In:
Integrated ferroelectrics
;
74
; 113-122
;
2005
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ISSN:
- Article (Journal) / Print
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Title:ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVD
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Contributors:
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Published in:Integrated ferroelectrics ; 74 ; 113-122
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Publisher:
- New search for: Taylor & Francis
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Place of publication:Philadelphia, PA
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Publication date:2005
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 74
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESSShao, Qi-Yue et al. | 2005
- 7
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GUEST EDITORIALTang, Ting-Ao et al. | 2005
- 13
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MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF PMNT CERAMICS DOPED WITH LITHIUM FLUORIDECao, Lin-Hong et al. | 2005
- 21
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EFFECT OF LITHIUM SALTS ADDITION ON SINTERING TEMPERATURE AND ELECTRICAL PROPERTIES OF PMNT CERAMICSCao, Lin-Hong et al. | 2005
- 31
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AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICONFang, F. et al. | 2005
- 45
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DIELECTRIC PROPERTIES OF MnO2-DOPED 0.9PMN-0.1PT CERAMICS UNDER A DC BIAS FIELDHuang, Shiming et al. | 2005
- 53
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DIELECTRIC CHARACTERISTICS OF POLYMER-CERAMIC-METAL COMPOSITES FOR THE APPLICATION OF EMBEDDED PASSIVE DEVICESLim, Eun-Sub et al. | 2005
- 61
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MICROSTRUCTURE EVOLUTION AND DIELECTRIC PROPERTIES OF (Ba1-xSrx)4Na2Nb10O30 CERAMICS WITH DIFFERENT Ba-Sr RATIOSOh, Chang-Dae et al. | 2005
- 71
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ELECTRICAL CHARACTERIZATION OF NICKEL OXIDE THIN FILMS DEPOSITED BY REACTIVE SPUTTERING FOR MEMORY APPLICATIONSLee, Jang Woo et al. | 2005
- 79
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BORON DIFFUSION PROPERTIES AND ELECTRICAL CHARACTERISTICS OF p Poly-Si0.73Ge0.27-AlNx-Al2O3-AlNx-n-Si (100) USING IN-SITU ALDLee, Chihoon et al. | 2005
- 87
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PROPERTIES OF MULTILAYER CERAMIC CAPACITOR WITH BaTiO3 THIN LAYERS DEPOSITED BY E-BEAM EVAPORATIONPark, Sang-Shik et al. | 2005
- 95
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STABILITY OF METAL ELECTRODES FOR MLCC WITH BaTiO3 THIN LAYERS BY DEPOSITION METHODPark, Sang-Shik et al. | 2005
- 103
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INTERFACIAL MICROSTRUCTURE OF HIGH-&b.kappa; DIELECTRIC CaZrOx FILMS DEPOSITED BY PULSE LASER DEPOSITION IN LOW OXYGEN PRESSUREQiu, X.Y. et al. | 2005
- 103
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INTERFACIAL MICROSTRUCTURE OF HIGH-kappa DIELECTRIC CaZrO~x FILMS DEPOSITED BY PULSE LASER DEPOSITION IN LOW OXYGEN PRESSUREQiu, X. Y. / Liu, H. W. / Fang, F. / Ha, M. J. / Liu, J.-M. et al. | 2005
- 113
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ELECTRICAL CHARACTERIZATION OF ZIRCONIUM OXIDE LAYERS GROWN BY LIQUID DELIVERY MOCVDLisker, M. et al. | 2005
- 123
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PRESSURE INDUCED DIELECTRIC CONSTANT SUPPRESSION IN CaCu3Ti4O12 CERAMICSChen, Aiping et al. | 2005
- 131
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EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITIONSeong, Nak-Jin et al. | 2005
- 137
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THE MICROSTRUCTURE CHARACTERISTICS AND DIELECTRIC BEHAVIORS OF THE COMPOSITIONALLY GRADED Ba(Ti,Sn)O3 THIN FILMSZhai, Jiwei et al. | 2005
- 147
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PREPARATION AND DIELECTRIC PROPERTIES OF Ba(ZrxTi1-x)O3 THIN FILMS GROWN BY A SOL-GEL PROCESSGao, Cheng et al. | 2005
- 155
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A BARIUM ZIRCONATE TITANATE-BASED INORGANIC DIELECTRIC MATERIAL WITH HIGH PERMITTIVITY AS A LEAD-FREE INSULATOR FOR SEMICONDUCTOR APPLICATIONSKobune, Masafumi et al. | 2005
- 165
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HIGH-TEMPERATURE AMORPHOUS HAFNIA (HfO2) FOR MICROELECTRONICSMiyake, M. et al. | 2005
- 173
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DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100)Lee, Sang-A. et al. | 2005
- 181
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PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF ULTRATHIN Ga2O3-TiO2 GATE DIELECTRICS ON Si (001) SubstratesSeong, Nak-Jin et al. | 2005
- 189
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LEAKAGE CURRENT MECHANISMS OF SrTiO3 THIN FILMS WITH MIS STRUCTURESHua, Jian et al. | 2005