Noncontact photothermal infrared radiometric deep-level transient spectroscopy of GaAs wafers (English)
- New search for: Mandelis, A.
- New search for: Mandelis, A.
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- New search for: Vargas, M.
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In:
Applied physics letters
;
67
, 11
; 1582-1584
;
1995
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ISSN:
- Article (Journal) / Print
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Title:Noncontact photothermal infrared radiometric deep-level transient spectroscopy of GaAs wafers
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Contributors:
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Published in:Applied physics letters ; 67, 11 ; 1582-1584
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Publisher:
- New search for: AIP
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Place of publication:Melville, NY
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Publication date:1995
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3400
- New search for: 33.00
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Keywords:
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Source:
Table of contents – Volume 67, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1501
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Nd3+:ethylene glycol amplifier and its stimulated emission cross sectionHan, K. G. / Kong, H. J. / Kim, H. S. / Um, G. Y. et al. | 1995
- 1503
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Injection power and wavelength dependence of an external‐seeded gain‐switched Fabry–Perot laserSeo, Dong‐Sun / Liu, Hai‐Feng / Kim, Dug Y. / Sampson, David D. et al. | 1995
- 1506
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Impedance‐corrected carrier lifetime measurements in semiconductor lasersShtengel, G. E. / Ackerman, D. A. / Morton, P. A. / Flynn, E. J. / Hybertsen, M. S. et al. | 1995
- 1509
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Theoretical analysis of optimal conditions in quantum structure semiconductor lasers for low threshold currentNambu, Yoshihiro / Asakawa, Kiyoshi et al. | 1995
- 1512
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Theoretical optical gain in InGaAsP/InP quantum well lasers: Evaluation of different envelope function schemesMeney, A. T. / Jones, G. et al. | 1995
- 1515
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Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double‐heterostructure blue‐light‐emitting diodeMohs, Georg / Fluegel, Brian / Giessen, Harald / Tajalli, Habib / Peyghambarian, Nasser / Chiu, Pei‐Chih / Phillips, B. Scott / Osin´ski, Marek et al. | 1995
- 1518
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Blue frequency shift due to external light injection in a distributed‐feedback laser diodeInoue, Kyo et al. | 1995
- 1521
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Metastable assisted deposition of TiN filmsBara´nkova´, H. / Ba´rdosˇ, L. / Berg, S. et al. | 1995
- 1524
-
Role of interface in ion mixing induced amorphization in the Ag–Mo system with very positive heat of formationJin, O. / Zhang, Z. J. / Liu, B. X. et al. | 1995
- 1527
-
Investigation of the interfacial order of nematic liquid crystal on photopolymer coated conducting glass substrates with a scanning tunneling microscopeJain, S. C. / Rajesh, K. / Samanta, S. B. / Narlikar, A. V. et al. | 1995
- 1530
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Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretationJanssens, Koenraad G. F. / Van der Biest, Omer / Vanhellemont, Jan / Maes, Herman E. / Hull, Robert et al. | 1995
- 1533
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X‐ray photoelectron diffraction of (100)‐oriented chemical vapor deposited diamond films on silicon (100)Schaller, E. / Ku¨ttel, O. M. / Aebi, P. / Schlapbach, L. et al. | 1995
- 1535
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One‐dimensional exciton diffusion in GaAs quantum wiresNagamune, Y. / Watabe, H. / Sogawa, F. / Arakawa, Y. et al. | 1995
- 1538
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Characterization of electron beam induced modification of thermally grown SiO2Barnes, J. R. / Hoole, A. C. F. / Murrell, M. P. / Welland, M. E. / Broers, A. N. / Bourgoin, J. P. / Biebuyck, H. / Johnson, M. B. / Michel, B. et al. | 1995
- 1541
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Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphireKapolnek, D. / Wu, X. H. / Heying, B. / Keller, S. / Keller, B. P. / Mishra, U. K. / DenBaars, S. P. / Speck, J. S. et al. | 1995
- 1544
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Decomposition and primary crystallization in undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 meltsBusch, R. / Schneider, S. / Peker, A. / Johnson, W. L. et al. | 1995
- 1547
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Amorphous Ni50Nb50/C multilayers for soft x rays made by pulsed laser depositionVitta, Satish / Metzger, T. H. / Mai, H. / Peisl, J. et al. | 1995
- 1549
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High quality epitaxial aluminum nitride layers on sapphire by pulsed laser depositionVispute, R. D. / Wu, Hong / Narayan, J. et al. | 1995
- 1552
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Fabrication of nanostructures using atomic‐force‐microscope‐based lithographySohn, L. L. / Willett, R. L. et al. | 1995
- 1555
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Direct‐current bias effect on the synthesis of (001) textured diamond films on siliconLee, J. S. / Liu, K. S. / Lin, I‐Nan et al. | 1995
- 1558
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Behavior of intrinsic Si point defects during annealing in vacuumGossmann, H.‐J. / Rafferty, C. S. / Unterwald, F. C. / Boone, T. / Mogi, T. K. / Thompson, M. O. / Luftman, H. S. et al. | 1995
- 1561
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A 4.5 kV 6H silicon carbide rectifierKordina, O. / Bergman, J. P. / Henry, A. / Janze´n, E. / Savage, S. / Andre´, J. / Ramberg, L. P. / Lindefelt, U. / Hermansson, W. / Bergman, K. et al. | 1995
- 1564
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Far‐infrared emission from hot quasi‐one‐dimensional quantum wires in GaAsGrayson, M. / Tsui, D. C. / Shayegan, M. / Hirakawa, K. / Ghanbari, R. A. / Smith, Henry I. et al. | 1995
- 1567
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High quality hydrogenated amorphous germanium prepared by the hot wire techniqueZanzig, L. / Beyer, W. / Wagner, H. et al. | 1995
- 1570
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Are electrical properties of an aluminum–porous silicon junction governed by dangling bonds?Stievenard, D. / Deresmes, D. et al. | 1995
- 1573
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Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxyDong, Jian‐Rong / Wang, Zhan‐Guo / Liu, Xiang‐Lin / Lu, Da‐Cheng / Wang, Du / Wang, Xiao‐Hui et al. | 1995
- 1576
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In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxyAre`s, R. / Tran, C. A. / Watkins, S. P. et al. | 1995
- 1579
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In‐plane‐gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantationTo¨bben, D. / de Vries, D. K. / Wieck, A. D. / Holzmann, M. / Abstreiter, G. / Scha¨ffler, F. et al. | 1995
- 1582
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Noncontact photothermal infrared radiometric deep‐level transient spectroscopy of GaAs wafersMandelis, A. / Budiman, R. A. / Vargas, M. / Wolff, D. et al. | 1995
- 1585
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Porous Si anisotropy from photoluminescence polarizationKovalev, D. / Chorin, M. Ben / Diener, J. / Koch, F. / Efros, Al. L. / Rosen, M. / Gippius, N. A. / Tikhodeev, S. G. et al. | 1995
- 1588
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Polycrystalline GaInAs/AlInAs films for photoconductive detectorsWood, C. E. C. / Johnson, W. J. / Cho, P. S. / Lee, C. H. et al. | 1995
- 1591
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Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substratesSmith, David J. / Tsen, S.‐C. Y. / Chen, Y. P. / Faurie, J.‐P. / Sivananthan, S. et al. | 1995
- 1594
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Quantum well intersubband heterodyne infrared detection up to 82 GHzLiu, H. C. / Li, Jianmeng / Brown, E. R. / McIntosh, K. A. / Nichols, K. B. / Manfra, M. J. et al. | 1995
- 1597
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In situ x‐ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)Selinder, T. I. / Miller, D. J. / Gray, K. E. et al. | 1995
- 1600
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Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxidesGreen, M. L. / Brasen, D. / Feldman, L. C. / Lennard, W. / Tang, H.‐T. et al. | 1995
- 1603
-
Persistent photoconductivity and electron density dependent magnetotransport measurements in narrow InGaAs/InP quantum wellsMu¨ller, S. / Pillath, J. / Bauhofer, W. / Kohl, A. / Heime, K. et al. | 1995
- 1606
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High‐resolution temperature measurement of void dynamics induced by electromigration in aluminum metallizationKondo, Seiichi / Hinode, Kenji et al. | 1995
- 1609
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Influence of interace and buffer layer on the structure of InAs/GaSb superlatticesTwigg, M. E. / Bennett, B. R. / Shanabrook, B. V. et al. | 1995
- 1612
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Influence of the process environment on the thermal intermixing of GaAs/AlAs/AlGaAs double barrier quantum wellsKupka, R. K. / Chen, Y. et al. | 1995
- 1615
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Effects of degraded edges in strips of high‐temperature superconducting films at microwave frequenciesGevorgian, S. / Carlsson, E. / Olsson, E. et al. | 1995
- 1618
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Phase locking in a multijunction superconducting loopDarula, M. / Beuven, S. / Siegel, M. / Darulova, A. / Seidel, P. et al. | 1995
- 1621
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Structure and magnetocrystalline anisotropy of R2Fe17−xGax compounds with higher Ga concentrationShen, Bao‐gen / Cheng, Zhao‐hua / Liang, Bing / Guo, Hui‐qun / Zhang, Jun‐xian / Gong, Hua‐yang / Wang, Fang‐wei / Yan, Qi‐wei / Zhan, Wen‐shan et al. | 1995
- 1624
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Synthesis of aluminum oxide thin films: Use of aluminum tris‐dipivaloylmethanate as a new low pressure metal organic chemical vapor deposition precursorCiliberto, E. / Fragala`, I. / Rizza, R. / Spoto, G. / Allen, G. C. et al. | 1995
- 1627
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Synthesis of fullerenes from diamondYosida, Yositaka et al. | 1995
- 1630
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Ferroelectric thin films with polarization gradients normal to the growth surface [Appl. Phys. Lett. 67, 721 (1995)]Mantese, J. V. / Schubring, N. W. / Micheli, A. L. / Catalan, A. B. et al. | 1995
- 1630
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Erratum: ‘‘Ferroelectric thin films with polarization gradients normal to the growth surface’’ [Appl. Phys. Lett. 67, 721 (1995)]Mantese, Joseph V. / Schubring, Norman W. / Micheli, Adolph L. / Catalan, Antonio B. et al. | 1995
- 1631
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CUMULATIVE AUTHOR INDEX| 1995