Molecular and Organic Devices - Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors. Based on an Asymmetric Small-Molecule Semiconductor (English)
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In:
IEEE transactions on electron devices
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56
, 2
; 176-185
;
2009
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ISSN:
- Article (Journal) / Print
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Title:Molecular and Organic Devices - Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors. Based on an Asymmetric Small-Molecule Semiconductor
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Contributors:
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Published in:IEEE transactions on electron devices ; 56, 2 ; 176-185
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2009
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Source:
Table of contents – Volume 56, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 161
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EDITORIAL - Proper Referencing of Prior ArtJindal, R.P. et al. | 2009
- 161
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Proper Referencing of Prior ArtJindal, Renuka P. et al. | 2009
- 162
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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced OxidationTilak, V. / Matocha, K. / Dunne, G. / Allerstam, F. / Sveinbjornsson, E.O. et al. | 2009
- 162
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Compound Semiconductor Devices - Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced OxidationTilak, V. et al. | 2009
- 170
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High-Voltage GaAs Photovoltaic Laser Power ConvertersSchubert, J. / Oliva, E. / Dimroth, F. / Guter, W. / Loeckenhoff, R. / Bett, A.W. et al. | 2009
- 176
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Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule SemiconductorZihong Liu, / Becerril, H.A. / Roberts, M.E. / Nishi, Y. / Zhenan Bao, et al. | 2009
- 176
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Molecular and Organic Devices - Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors. Based on an Asymmetric Small-Molecule SemiconductorLiu, Z. et al. | 2009
- 186
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Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) DevicesRusso, U. / Ielmini, D. / Cagli, C. / Lacaita, A.L. et al. | 2009
- 186
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Nanoelectronics - Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) DevicesRusso, U. et al. | 2009
- 193
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Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) DevicesRusso, U. / Ielmini, D. / Cagli, C. / Lacaita, A.L. et al. | 2009
- 201
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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETsLind, E. / Persson, M.P. / Niquet, Y.-M. / Wernersson, L.-E. et al. | 2009
- 206
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Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced Formula Not Shown Ion-Implantation TechniqueYamaguchi, T. / Kashihara, K. / Okudaira, T. / Tsutsumi, T. / Maekawa, K. / Murata, N. / Tsuchimoto, J. et al. | 2009
- 206
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Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation TechniqueYamaguchi, T. / Kashihara, K. / Okudaira, T. / Tsutsumi, T. / Maekawa, K. / Murata, N. / Tsuchimoto, J. / Asai, K. / Yoneda, M. et al. | 2009
- 206
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Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced Si+ Ion-Implantation TechniqueYamaguchi, T. et al. | 2009
- 214
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A CMOS Image Sensor With In-Pixel Two-Stage Charge Transfer for Fluorescence Lifetime ImagingHyung-June Yoon, / Itoh, S. / Kawahito, S. et al. | 2009
- 214
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Optoelectronics, Displays, and Imaging - A CMOS Image Sensor With In-Pixel Two-Stage Charge Transfer for Fluorescence Lifetime ImagingYoon, H.-J. et al. | 2009
- 222
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Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser DiodesMeneghini, M. / Trivellin, N. / Orita, K. / Yuri, M. / Ueda, D. / Zanoni, E. / Meneghesso, G. et al. | 2009
- 229
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An Improved Optical Feedback Pixel Driver CircuitPapadopoulos, N.P. / Hatzopoulos, A.A. / Papakostas, D.K. et al. | 2009
- 236
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Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMahapatra, S. / Maheta, V.D. / Islam, A.E. / Alam, M.A. et al. | 2009
- 236
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Reliability - Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMahapatra, S. et al. | 2009
- 243
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Benchmark Tests for MOSFET Compact Models With Application to the PSP ModelXin Li, / Weimin Wu, / Jha, A. / Gildenblat, G. / van Langevelde, R. / Smit, G.D.J. / Scholten, A.J. / Klaassen, D.B.M. / McAndrew, C.C. / Watts, J. et al. | 2009
- 243
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Silicon Devices - Benchmark Tests for MOSFET Compact Models With Application to the PSP ModelLi, X. et al. | 2009
- 252
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New Method for Evaluating Electric Field at Junctions of DRAM Cell Transistors by Measuring Junction Leakage CurrentMori, Y. / Kimura, S. / Yamada, R.-i. et al. | 2009
- 260
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Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate TransistorRay, B. / Mahapatra, S. et al. | 2009
- 267
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A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETsDaming Huang, / Liu, W.J. / Zhiying Liu, / Liao, C.C. / Li-Fei Zhang, / Zhenghao Gan, / Waisum Wong, / Ming-Fu Li, et al. | 2009
- 267
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A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETsHuang, D. / Liu, W.J. / Liu, Z.Y. / Liao, C.C. / Zhang, L.-F. / Gan, Z. / Wong, W. / Li, M.-F. et al. | 2009
- 275
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Design Methodology and Protection Strategy for ESD-CDM Robust Digital System Design in 90-nm and 130-nm TechnologiesTze Wee Chen, / Ito, C. / Loh, W. / Wei Wang, / Doddapaneni, K. / Mitra, S. / Dutton, R.W. et al. | 2009
- 284
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A Comprehensive Investigation of Analog Performance for Uniaxial Strained PMOSFETsKuo, J.J.-Y. / Chen, W.P.-N. / Pin Su, et al. | 2009
- 291
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Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETsKuroda, R. / Suwa, T. / Teramoto, A. / Hasebe, R. / Sugawa, S. / Ohmi, T. et al. | 2009
- 299
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Geometry-Scalable Parasitic Deembedding Methodology for On-Wafer Microwave Characterization of MOSFETsMing-Hsiang Cho, / Chen, D. / Lee, R. / An-Sam Peng, / Lin-Kun Wu, / Chune-Sin Yeh, et al. | 2009
- 306
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Characterization of Three-Terminal Junctions Operated as In-Plane Gated Field-Effect TransistorsMuller, C.R. / Worschech, L. / Hofling, S. / Forchel, A. et al. | 2009
- 312
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Selective Device Structure Scaling and Parasitics Engineering: A Way to Extend the Technology RoadmapLan Wei, / Jie Deng, / Li-Wen Chang, / Keunwoo Kim, / Ching-Te Chuang, / Wong, H.-S.P. et al. | 2009
- 321
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Solid-State Device Phenomena - A New Fabrication and Assembly Process for Ultrathin ChipsBurghartz, J.N. et al. | 2009
- 321
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A New Fabrication and Assembly Process for Ultrathin ChipsBurghartz, J.N. / Appel, W. / Rempp, H.D. / Zimmermann, M. et al. | 2009
- 328
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Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental ResultsSakalas, P. / Ramonas, M. / Schroter, M. / Jungemann, C. / Shimukovitch, A. / Kraus, W. et al. | 2009
- 337
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Maximum Junction Temperatures of SiC Power DevicesKuang Sheng, et al. | 2009
- 337
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Solid-State Power and High Voltage - Maximum Junction Temperatures of SiC Power DevicesSheng, K. et al. | 2009
- 343
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BRIEFS - Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor PerformanceMcDowell, M.G. et al. | 2009
- 343
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Influence of Channel Stoichiometry on Zinc Indium Oxide Thin-Film Transistor PerformanceMcDowell, M.G. / Hill, I.G. et al. | 2009
- 348
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Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Formula Not Shown AlloyZhang, Y.-Y. / Oh, J. / Han, I.-S. / Zhong, Z. / Li, S.-G. / Jung, S.-Y. / Park, K.-Y. / Shin, H.-S. / Choi, W.-H. et al. | 2009
- 348
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Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ AlloyYing-Ying Zhang, / Jungwoo Oh, / In-Shik Han, / Zhun Zhong, / Shi-Guang Li, / Soon-Yen Jung, / Kee-Young Park, / Hong-Sik Shin, / Won-Ho Choi, / Hyuk-Min Kwon, et al. | 2009
- 348
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Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Ni0.95Pd0.05 AlloyZhang, Y.-Y. et al. | 2009
- 354
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Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line CellGoux, L. / Tio Castro, D. / Hurkx, G. / Lisoni, J.G. / Delhougne, R. / Gravesteijn, D.J. / Attenborough, K. / Wouters, D.J. et al. | 2009
- 359
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Special issue on Light Emitting Diodes| 2009
- 359
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ANNOUNCEMENTS - Call for Papers — Special Issue on Light Emitting Diodes| 2009
- 360
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Call for Papers — Special Issue on Compact Interconnect Models for Giga Scale Integration| 2009
- 360
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Special issue on Compact Interconnect Models for Giga Scale Integration| 2009
- C1
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Table of contents| 2009
- C2
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IEEE Transactions on Electron Devices publication information| 2009
- C3
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IEEE Transactions on Electron Devices information for authors| 2009