Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor Core (English)
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In:
IEEE transactions on nuclear science
;
57
, 4
; 2098-2106
;
2010
-
ISSN:
- Article (Journal) / Print
-
Title:Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor Core
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Contributors:Rech, P ( author ) / Paccagnella, A / Grosso, M / Sonza Reorda, M / Melchiori, F / Loparco, D / Appello, D
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Published in:IEEE transactions on nuclear science ; 57, 4 ; 2098-2106
-
Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2010
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
-
Language:English
- New search for: 770/3450/5540
- New search for: 33.40
- Further information on Basic classification
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Keywords:
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Classification:
Local classification TIB: 770/3450/5540 BKL: 33.40 Kernphysik -
Source:
Table of contents – Volume 57, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1717
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Table of contents| 2010
- 1721
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RADECS 2009 Conference Overview| 2010
- 1721
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EDITORIAL RADECS 2009 Conference Overview| 2010
- 1723
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Comments by the EditorsSchwank, James / Marshall, Paul / Brown, Dennis / Poivey, Christian / Pease, Ron / Girard, Sylvain / Reed, Robert et al. | 2010
- 1724
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List of Reviewers| 2010
- 1726
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Monte Carlo Simulation of Single Event EffectsWeller, Robert A / Mendenhall, Marcus H / Reed, Robert A / Schrimpf, Ronald D / Warren, Kevin M / Sierawski, Brian D / Massengill, Lloyd W et al. | 2010
- 1726
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SHORT COURSE: SELECTED PAPERS Monte Carlo Simulation of Single Event EffectsWeller, R A et al. | 2010
- 1747
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Current and Future Challenges in Radiation Effects on CMOS ElectronicsDodd, P E / Shaneyfelt, M R / Schwank, J R / Felix, J A et al. | 2010
- 1764
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SESSION A: DEVICES, INTEGRATED CIRCUITS, AND MEMS Total-Dose Effects Caused by High-Energy Neutrons and λ-Rays in Multiple-Gate FETsKilchytska, V et al. | 2010
- 1764
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Total-Dose Effects Caused by High-Energy Neutrons and $\gamma $-Rays in Multiple-Gate FETsKilchytska, Valeriya / Alvarado, J / Collaert, N / Rooyakers, R / Militaru, O / Berger, G / Flandre, D et al. | 2010
- 1771
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Influence of Back-Gate Bias and Process Conditions on the Gamma Degradation of the Transconductance of MuGFETsPut, S / Simoen, E R / Collaert, N / De Keersgieter, A / Claeys, C / Van Uffelen, M / Leroux, P et al. | 2010
- 1777
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Effects of Moisture on Radiation-Induced Degradation in CMOS SOI TransistorsShaneyfelt, Marty R / Schwank, James R / Dodd, Paul E / Hill, Tom A / Dalton, Scott M / Swanson, Scot E et al. | 2010
- 1781
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Front-End Performance and Charge Collection Properties of Heavily Irradiated DNW MAPSRatti, L / Manghisoni, M / Re, V / Traversi, G / Zucca, S / Bettarini, S / Morsani, F / Rizzo, G et al. | 2010
- 1790
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TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC ConvertersFaccio, F / Allongue, B / Blanchot, G / Fuentes, C / Michelis, S / Orlandi, S / Sorge, R et al. | 2010
- 1798
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Simulated Effects of Proton and Ion Beam Irradiation on Titanium Dioxide MemristorsVujisic, M / Stankovic, K / Marjanovic, N / Osmokrovic, P et al. | 2010
- 1805
-
Total Dose Effect on the Propagation of Single Event Transients in a CMOS Inverter StringBuchner, Stephen / Sibley, Michael / Eaton, Paul / Mavis, David / McMorrow, Dale et al. | 2010
- 1805
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SESSION B: SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS Total Dose Effect on the Propagation of Single Event Transients in a CMOS Inverter StringBuchner, S et al. | 2010
- 1811
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Large SET Duration Broadening in a Fully-Depleted SOI Technology—Mitigation With Body ContactsFerlet-Cavrois, V / Kobayashi, D / McMorrow, D / Schwank, J R / Ikeda, H / Zadeh, A / Flament, O / Hirose, K et al. | 2010
- 1820
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Analysis of SET Propagation in Flash-Based FPGAs by Means of Electrical Pulse InjectionSterpone, L / Battezzati, N / Ferlet-Cavrois, V et al. | 2010
- 1827
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Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser MeasurementsSchwank, J R / Shaneyfelt, M R / McMorrow, D / Ferlet-Cavrois, V / Dodd, P E / Heidel, D F / Marshall, P W / Pellish, J A / LaBel, K A / Rodbell, K P et al. | 2010
- 1835
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Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size DependenceBagatin, Marta / Gerardin, Simone / Cellere, Giorgio / Paccagnella, Alessandro / Visconti, Angelo / Beltrami, Silvia / Bonanomi, Mauro / Harboe-Sorensen, Reno et al. | 2010
- 1842
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Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray IrradiationSilvestri, Marco / Gerardin, Simone / Faccio, Federico / Paccagnella, Alessandro et al. | 2010
- 1849
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Physical Evidence Supporting the Electrical Signature of SEGR on Thin Vertical OxidesLawrence, Reed K / Zimmerman, Jeffrey A / Ross, Jason F et al. | 2010
- 1856
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SESSION C: SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTsDasGupta, S et al. | 2010
- 1856
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Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTsDasGupta, S / McMorrow, D / Reed, R A / Schrimpf, R D / Boos, J B et al. | 2010
- 1861
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Development of a New Methodology to Model the Synergistic Effects Between TID and ASETsRoche, N J-H / Dusseau, L / Boch, J / Velo, Y G / Vaille, J / Saigne, F / Auriel, G / Azais, B / Buchner, S P / Marec, R et al. | 2010
- 1869
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Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm TechnologyArtola, Laurent / Hubert, G / Duzellier, S / Bezerra, Francoise et al. | 2010
- 1876
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Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-FlopsUznanski, S / Gasiot, G / Roche, P / Tavernier, C / Autran, Jean-Luc et al. | 2010
- 1884
-
Mixed-Mode Simulation of Bit-Flip With Pulsed LaserPalomo, F Rogelio / Mogollon, J M / Napoles, J / Aguirre, M A et al. | 2010
- 1892
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Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct IonizationRaine, M / Gaillardin, M / Sauvestre, J / Flament, O / Bournel, A / Aubry-Fortuna, V et al. | 2010
- 1900
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Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOSLuu, A / Austin, P / Miller, F / Buard, N / Carrière, Thierry / Poirot, P / Gaillard, R / Bafleur, M / Sarrabayrouse, G et al. | 2010
- 1908
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TCAD Simulations on CMOS Propagation Induced Pulse Broadening Effect: Dependence Analysis on the Threshold VoltageMogollón, J M / Palomo, F R / Aguirre, M A / Nápoles, J / Guzmán-Miranda, H / García-Sánchez, E et al. | 2010
- 1915
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“Effective NIEL” in Silicon: Calculation Using Molecular Dynamics Simulation ResultsInguimbert, C / Arnolda, P / Nuns, T / Rolland, G et al. | 2010
- 1915
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SESSION D: BASIC MECHANISMS "Effective NIEL" in Silicon: Calculation Using Molecular Dynamics Simulation ResultsInguimbert, C et al. | 2010
- 1924
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Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETsGriffoni, Alessio / Gerardin, Simone / Meneghesso, Gaudenzio / Paccagnella, Alessandro / Simoen, Eddy / Claeys, Cor et al. | 2010
- 1933
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Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETsArora, R / Simoen, E / En Xia Zhang, / Fleetwood, D M / Schrimpf, R D / Galloway, K F / Choi, B K / Mitard, J / Meuris, M / Claeys, C et al. | 2010
- 1940
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A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated ${\hbox {p}} ^{+} {\hbox {n}}$ GaAs DiodesWarner, Jeffrey H / Cress, Cory D / Messenger, Scott R / Walters, Robert J / Ringel, Steve A / Jeongho Park, et al. | 2010
- 1940
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A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated p+ n GaAs DiodesWarner, J H et al. | 2010
- 1946
-
Semi-Empirical LET Descriptions of Heavy Ions Used in the European Component Irradiation FacilitiesJavanainen, Arto / Trzaska, W H / Harboe-Sørensen, R / Virtanen, A / Berger, G / Hajdas, W et al. | 2010
- 1950
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Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate IrradiationVelo, Y Gonzalez / Boch, Jérôme / Roche, Nicolas Jean-Henri / Perez, Stephanie / Vaille, Jean-Roch / Dusseau, Laurent / Saigne, Frédéric / Lorfevre, Eric / Schrimpf, Ronald D / Chatry, Christian et al. | 2010
- 1950
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SESSION E: HARDNESS ASSURANCE Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate IrradiationVelo, Y G et al. | 2010
- 1958
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Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device TestingBerg, M D / Buchner, S P / Hak Kim, / Friendlich, M / Perez, C / Phan, A M / Seidleck, C M / Label, K A / Kruckmeyer, K et al. | 2010
- 1966
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Failure Modes and Hardness Assurance for Linear Integrated Circuits in Space ApplicationsJohnston, Allan H / Rax, B G et al. | 2010
- 1973
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Laser SEL Sensitivity Mapping of SRAM CellsBurnell, Andrew J / Chugg, Andrew Michael / Harboe-Sørensen, Reno et al. | 2010
- 1978
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Fault Modeling and Worst-Case Test Vectors for Logic Failure Induced by Total-Dose in Combinational Circuits of Cell-Based ASICsAbou-Auf, Ahmed A / Abdel-Aziz, H A / Abdel-Aziz, M M et al. | 2010
- 1986
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Extensive SEU Impact Analysis of a PIC Microprocessor for Selective HardeningValderas, M G / García, Marta Portela / López, Celia / Entrena, L et al. | 2010
- 1992
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A New Critical Variable Analysis in Processor-Based SystemsBergaoui, Salma / Vanhauwaert, Pierre / Leveugle, Regis et al. | 2010
- 2000
-
SESSION F: TERRESTRIAL AND RADIATION ENVIRONMENTS ICARE On-Board SAC-C: More Than 8 Years of SEU and MCU, Analysis and PredictionBoatella, C et al. | 2010
- 2000
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ICARE On-Board SAC-C: More Than 8 Years of SEU and MCU, Analysis and PredictionBoatella, C / Hubert, G / Ecoffet, R / Duzellier, S et al. | 2010
- 2010
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Background Estimation in MXGS Apparatus on International Space StationAlpat, B / Menichelli, M / Caraffini, D / Petasecca, M / Renzi, F et al. | 2010
- 2017
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Inner Belt Anisotropy Investigations Based on the Standard Radiation Environment Monitor (SREM)Siegl, M / Evans, H D R / Daly, E J / Santin, G / Nieminen, P J / Bühler, P et al. | 2010
- 2024
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Gamma-Radiation Effects on Bragg Gratings Written by Femtosecond UV Laser in Ge-Doped FibersGusarov, A / Brichard, B / Nikogosyan, D N et al. | 2010
- 2024
-
SESSION G: PHOTONICS Gamma-Radiation Effects on Bragg Gratings Written by Femtosecond UV Laser in Ge-Doped FibersGusarov, A et al. | 2010
- 2029
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Influence of Manufacturing Parameters and Temperature on the Radiation Sensitivity of Fiber Bragg GratingsHenschel, Henning / Hoeffgen, Stefan K / Kuhnhenn, Jochen / Weinand, Udo et al. | 2010
- 2035
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Effects of Low Temperature Proton Irradiation on a Large Area CCD for Astrometric ApplicationsHopkinson, G R / Gare, P / Sarri, G et al. | 2010
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Long-Term Exposure of Fiber Bragg Gratings in the BR1 Low-Flux Nuclear ReactorGusarov, A et al. | 2010
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Transient and Steady State Radiation Responses of Solarization-Resistant Optical FibersGirard, S / Marcandella, C et al. | 2010
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Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel SensorBeaumel, Matthieu / Hervé, Dominique / Van Aken, Dirk et al. | 2010
- 2066
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- 2066
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Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High FluencesMekki, J / Moll, M / Fahrer, M / Glaser, M / Dusseau, L et al. | 2010
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The Radiation Hardness Assurance Facility at INFN-LNS Catania for the Irradiation of Electronic Components in AirMenichelli, Mauro / Alpat, Behcet / Papi, Andrea / Sorensen, Reno Harboe / Cirrone, G A P / Ferrera, Francesco / Figuera, Pierpaolo / Finocchiaro, Paolo / Lattuada, Marcello / Rifuggiato, Danilo et al. | 2010
- 2079
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A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and ModelingRoche, Philippe / Gasiot, Gilles / Uznanski, Slawosz / Daveau, Jean-Marc / Torras-Flaquer, Josep / Clerc, Sylvain / Harboe-Sørensen, Reno et al. | 2010
- 2079
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SESSION I: TECHNOLOGY AND DESIGN HARDENING A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and ModelingRoche, P et al. | 2010
- 2089
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A 90 nm Bulk CMOS Radiation Hardened by Design Cache MemoryXiaoyin Yao, / Clark, Lawrence T / Patterson, Dan W / Holbert, Keith E et al. | 2010
- 2098
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Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor CoreRech, Paolo / Paccagnella, Alessandro / Grosso, Michelangelo / Reorda, Matteo Sonza / Melchiori, Fabio / Loparco, Domenico / Appello, Davide et al. | 2010
- 2106
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ACCELERATOR TECHNOLOGY Design Studies for a High Resolution Cold Cavity Beam Position MonitorShin, S et al. | 2010
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READOUT ELECTRONICS Readout ASIC With SOI Technology for X-Ray CCDsKishishita, T et al. | 2010
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Readout ASIC With SOI Technology for X-Ray CCDsKishishita, Tetsuichi / Idehara, Toshihiro / Ikeda, Hirokazu / Tsunemi, Hiroshi / Arai, Yasuo / Sato, Goro / Takahashi, Tadayuki et al. | 2010
- 2365
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Development of 500 MHz Multi-Channel Readout Electronics for Fast Radiation DetectorsHennig, W / Asztalos, S J / Breus, D / Sabourov, K / Warburton, W K et al. | 2010
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Towards an Efficient Prototype of a RPC Detector Readout System for the Daya Bay Neutrino ExperimentHeng Yang, / Hao Liang, / Yuan Yuan, / Xiaoqi Yu, / Yongzhao Zhou, et al. | 2010
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SCINTILLATION DETECTORS A Measurement of the Scintillation Light Yield in CF4 Using a Photosensitive GEM DetectorAzmoun, B et al. | 2010
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A Measurement of the Scintillation Light Yield in CF~4 Using a Photosensitive GEM DetectorAzmoun, B. / Caccavano, A. / Rumore, M. / Sinsheimer, J. / Smirnov, N. / Stoll, S. / Woody, C. et al. | 2010
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A Measurement of the Scintillation Light Yield in ${\rm CF}_{4}$ Using a Photosensitive GEM DetectorAzmoun, Babek / Caccavano, Adam / Rumore, Matthew / Sinsheimer, John / Smirnov, Nikolai / Stoll, Sean / Woody, Craig et al. | 2010
- 2382
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Design and Experimental Characterization of Multilinear Silicon Drift Detectors for 2D Position-Sensing Operating at High Drift FieldsCastoldi, A / Guazzoni, C / Garafalo, F Tassan / Hartmann, R / Strüder, L et al. | 2010
- 2382
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SOLID STATE DETECTORS Design and Experimental Characterization of Multilinear Silicon Drift Detectors for 2D Position-Sensing Operating at High Drift FieldsCastoldi, A et al. | 2010
- 2389
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DEPFET Macropixel Detectors for MIXS: First Electrical Qualification MeasurementsMajewski, P / Andricek, L / Christensen, U / Hilchenbach, M / Lauf, T / Lechner, P / Lutz, G / Reiffers, J / Richter, R / Schaller, G et al. | 2010
- 2397
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Fast High-Flux Response of CdZnTe X-Ray Detectors by Optical Manipulation of Deep Level Defect OccupationsProkesch, M / Bale, D S / Szeles, C et al. | 2010
- 2400
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Charge Collection and Propagation in Diamond X-Ray DetectorsKeister, Jeffrey W / Smedley, John / Dimitrov, Dimitre / Busby, Richard et al. | 2010
- 2405
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Correction to “Evidences of Rare-Earth Nanophases Embedded in Silica Using Vibrational Spectroscopy” [Jun 10 1361-1369]Vedda, Anna / Chiodini, Norberto / Fasoli, Mauro / Lauria, Alessandro / Moretti, Federico / Di Martino, Daniela / Baraldi, Andrea / Buffagni, Elisa / Capelletti, Rosanna / Mazzera, Margherita et al. | 2010
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CORRECTIONS Correction to "Evidences of Rare-Earth Nanophases Embedded in Silica Using Vibrational Spectroscopy"Vedda, A et al. | 2010
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Correction to “Scintillation Screen Investigations for High-Current Ion Beams” [Jun 10 1414-1419]Gütlich, Eiko / Forck, Peter / Ensinger, Wolfgang / Walasek-Höhne, Beata et al. | 2010
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Correction to "Scintillation Screen Investigations for High-Current Ion Beams"Gütlich, E et al. | 2010
- 2408
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IEEE Foundation| 2010
- C1
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[Front cover]| 2010
- C2
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IEEE Transactions on Nuclear Science publication information| 2010
- C3
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IEEE Transactions on Nuclear Science information for authors| 2010
- C4
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Affiliate Plan of the IEEE Nuclear and Plasma Sciences Society| 2010
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SELECTED PAPERS FROM THE 2009 RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) CONFERENCE, Bruges, Belgium, September 14-18, 2009| 2010