The EI4 EPR centre in 6H SiC (German)
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In:
Physica scripta
;
2010
, 141
; 14013-14014
;
2010
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ISSN:
- Article (Journal) / Print
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Title:The EI4 EPR centre in 6H SiC
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Contributors:
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Published in:Physica scripta ; 2010, 141 ; 14013-14014
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Publisher:
- New search for: IoP Publ.
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Place of publication:Bristol
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Publication date:2010
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:German
- New search for: 33.00
- Further information on Basic classification
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Keywords:
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Classification:
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Source:
Table of contents – Volume 2010, Issue 141
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 11001
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EDITORIAL: The 23rd Nordic Semiconductor MeetingÓlafsson, Sveinn et al. | 2010
- 14001
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Kondo-like resonance at high temperatures in a magnetic semiconductor single-electron transistorLebedeva, N et al. | 2010
- 14002
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Small-signal analysis of granular semiconductorsVarpula, Aapo et al. | 2010
- 14003
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Modelling of dc characteristics for granular semiconductorsVarpula, Aapo et al. | 2010
- 14004
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An investigation of Fe-doped ZnO thin films grown by magnetron sputteringGorzkowska-Sobas, A et al. | 2010
- 14005
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Effect of hydrogenation on minority carrier lifetime in low-grade siliconDanielsson, D M et al. | 2010
- 14006
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Defects in low-energy electron-irradiated n-type 4H-SiCBeyer, F C et al. | 2010
- 14007
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On intrinsic defects in Co-doped ZnO thin filmsSeghier, D et al. | 2010
- 14008
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Analysis of 1.2 kV SiC buried-grid VJFETsLim, J-K et al. | 2010
- 14009
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New AlGaN/GaN HEMTs employing both a floating gate and a field plateLim, Jiyong et al. | 2010
- 14010
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Measurements of photo-induced changes in the conduction properties of ALD-Zn1-xMgxO thin filmsPettersson, J et al. | 2010
- 14011
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Time-resolved measurements of optical gain and photoluminescence in silicon nanocrystalsDohnalová, K et al. | 2010
- 14012
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Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTsUsman, Muhammad et al. | 2010
- 14013
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The EI4 EPR centre in 6H SiCCarlsson, P et al. | 2010
- 14014
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Transport in four-terminal semiconductor nanostructures with Rashba spinorbit interactionThorgilsson, Gunnar et al. | 2010
- 14015
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Radiation-induced defects in GaNSon, N T et al. | 2010
- 14016
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Modelling of quantum ballistic cylindrical nanowire MOSFETs in the subthreshold regimeMonga, Udit et al. | 2010
- 14017
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Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheresKolari, K et al. | 2010