Improved homogeneity of microcrystalline absorber layer in thin-film silicon tandem solar cells (English)
- New search for: Smirnov, Vlad
- New search for: Smirnov, Vlad
- New search for: Das, Chandan
- New search for: Melle, Thomas
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- New search for: Carius, Reinhard
- New search for: Finger, Friedhelm
In:
Materials science and engineering / B
;
159
; 44-48
;
2009
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ISSN:
- Article (Journal) / Print
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Title:Improved homogeneity of microcrystalline absorber layer in thin-film silicon tandem solar cells
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Contributors:Smirnov, Vlad ( author ) / Das, Chandan / Melle, Thomas / Lambertz, Andreas / Hülsbeck, Markus / Carius, Reinhard / Finger, Friedhelm
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Published in:Materials science and engineering / B ; 159 ; 44-48
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2009
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 51.00 / 51.45
- Further information on Basic classification
- New search for: 535/5100
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Keywords:
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Classification:
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Source:
Table of contents – Volume 159
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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PrefaceKissinger, Gudrun / Pizzini, Sergio / Tu, Hailing / Yamada-Kaneta, Hiroshi et al. | 2009
- 2
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Elaboration and characterization of Si(n)/PS/ZnO(n) structure obtained by rf-magnetron sputtering from aerogel nanopowder target materialAlaya, A. / Nouiri, M. / Ayadi, Z. Ben / Djessas, K. / Khirouni, K. / Mir, L. El et al. | 2008
- 6
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Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVDDagkaldiran, Ü. / Gordijn, A. / Finger, F. / Yates, H.M. / Evans, P. / Sheel, D.W. / Remes, Z. / Vanecek, M. et al. | 2008
- 10
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Dominant role of interfaces in solar cells with N-a-Si:H/P-c-Si heterojunction with intrinsic thin layerDatta, A. / Damon-Lacoste, J. / Nath, M. / Roca i Cabarrocas, P. / Chatterjee, P. et al. | 2008
- 14
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Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elementsMabrook, M.F. / Jombert, A.S. / Machin, S.E. / Pearson, C. / Kolb, D. / Coleman, K.S. / Zeze, D.A. / Petty, M.C. et al. | 2008
- 18
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Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:HMolpeceres, C. / Lauzurica, S. / García-Ballesteros, J.J. / Morales, M. / Guadaño, G. / Ocaña, J.L. / Fernández, S. / Gandía, J.J. / Villar, F. / Nos, O. et al. | 2008
- 23
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Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVDMuñoz, D. / Voz, C. / Blanque, S. / Ibarz, D. / Bertomeu, J. / Alcubilla, R. et al. | 2008
- 27
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Role of hydrogen in the peeling of hydrogenated microcrystalline silicon filmsPham, N. / Djeridane, Y. / Abramov, A. / Hadjadj, A. / Cabarrocas, P. Roca i et al. | 2008
- 31
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Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:HPoliani, E. / Somaschini, C. / Sanguinetti, S. / Grilli, E. / Guzzi, M. / Le Donne, A. / Binetti, S. / Pizzini, S. / Chrastina, D. / Isella, G. et al. | 2008
- 34
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Evidence of bimodal crystallite size distribution in μc-Si:H filmsRam, Sanjay K. / Islam, Md. Nazrul / Kumar, Satyendra / Roca i Cabarrocas, P. et al. | 2008
- 34
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Evidence of bimodal crystallite size distribution in mc-Si:H filmsRam, S. K. / Islam, M. N. / Kumar, S. / Roca i Cabarrocas, P. et al. | 2009
- 38
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Gas phase considerations for the growth of device quality nanocrystalline silicon at high rateRath, J.K. / Verkerk, A.D. / Liu, Y. / Brinza, M. / Goedheer, W.J. / Schropp, R.E.I. et al. | 2008
- 44
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Improved homogeneity of microcrystalline absorber layer in thin-film silicon tandem solar cellsSmirnov, Vlad / Das, Chandan / Melle, Thomas / Lambertz, Andreas / Hülsbeck, Markus / Carius, Reinhard / Finger, Friedhelm et al. | 2008
- 48
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Bragg reflector and laser fired back contact in a-Si:H/c-Si heterostructure solar cellTucci, M. / Serenelli, L. / Salza, E. / Pirozzi, L. / De Cesare, G. / Caputo, D. / Ceccarelli, M. et al. | 2008
- 53
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Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperaturesVerkerk, A.D. / de Jong, M.M. / Rath, J.K. / Brinza, M. / Schropp, R.E.I. / Goedheer, W.J. / Krzhizhanovskaya, V.V. / Gorbachev, Y.E. / Orlov, K.E. / Khilkevitch, E.M. et al. | 2008
- 57
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Laser annealing of the Si layers in Si/SiO2 multiple quantum wellsArguirov, T. / Mchedlidze, T. / Kouteva-Arguirova, S. / Kittler, M. / Rölver, R. / Berghoff, B. / Bätzner, D. / Spangenberg, B. et al. | 2009
- 61
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Non-agglomerated silicon nanoparticles on (001) silicon substrate formed by PLA and their photoluminescence propertiesDu, Jun / Tu, Hailing / Wang, Lei et al. | 2008
- 66
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Si quantum dots for solar cell fabricationFiccadenti, M. / Pinto, N. / Morresi, L. / Murri, R. / Serenelli, L. / Tucci, M. / Falconieri, M. / Sytchkova, A. Krasilnikova / Grilli, M.L. / Mittiga, A. et al. | 2008
- 70
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Silicon nanostructures for solar cell applicationsGourbilleau, F. / Dufour, C. / Rezgui, B. / Brémond, G. et al. | 2008
- 74
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Structural and optical properties of silicon quantum dots in silicon nitride grown in situ by PECVD using different gas precursorsMercaldo, Lucia V. / Veneri, Paola Delli / Esposito, Emilia / Massera, Ettore / Usatii, Iurie / Privato, Carlo et al. | 2008
- 77
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PECVD in-situ growth of silicon quantum dots in silicon nitride from silane and nitrogenMercaldo, Lucia V. / Veneri, Paola Delli / Esposito, Emilia / Massera, Ettore / Usatii, Iurie / Privato, Carlo et al. | 2008
- 80
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Quantitative study of the Si/SiO2 phase separation in substoichiometric silicon oxide filmsNicotra, G. / Spinella, C. / La Magna, A. / Bongiorno, C. / Rimini, E. et al. | 2008
- 83
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Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowiresSalem, B. / Dhalluin, F. / Baron, T. / Jamgotchian, H. / Bedu, F. / Dallaporta, H. / Gentile, P. / Pauc, N. / den Hertog, M.I. / Rouviere, J.L. et al. | 2008
- 87
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Space-separated quantum cutting in differently prepared solid-state dispersions of Si nanocrystals and Er3+ ions in SiO2Timmerman, D. / Gregorkiewicz, T. et al. | 2009
- 90
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Strain and strain-release engineering at epitaxial SiGe islands on Si(001) for microelectronic applicationsVastola, G. / Marzegalli, A. / Montalenti, F. / Miglio, Leo et al. | 2008
- 95
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Nitrogen in silicon: Diffusion at 500–750°C and interaction with dislocationsAlpass, C.R. / Murphy, J.D. / Falster, R.J. / Wilshaw, P.R. et al. | 2008
- 95
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Nitrogen in silicon: Diffusion at 500-750degreeC and interaction with dislocationsAlpass, C. R. / Murphy, J. D. / Falster, R. J. / Wilshaw, P. R. et al. | 2009
- 99
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Effect of processing on microstructure of Si:MnBak-Misiuk, J. / Misiuk, A. / Romanowski, P. / Barcz, A. / Jakiela, R. / Dynowska, E. / Domagala, J.Z. / Caliebe, W. et al. | 2008
- 103
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Plastic deformation in 200mm silicon wafers arising from mechanical loads in vertical-type and horizontal-type furnacesFischer, A. / Kissinger, G. / Ritter, G. / Akhmetov, V. / Kittler, M. et al. | 2009
- 107
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Vacancies and E-centers in silicon as multi-symmetry defectsGanchenkova, M.G. / Oikkonen, L.E. / Borodin, V.A. / Nicolaysen, S. / Nieminen, R.M. et al. | 2008
- 112
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The self-interstitial in silicon and germaniumJones, R. / Carvalho, A. / Goss, J.P. / Briddon, P.R. et al. | 2008
- 117
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Impact of bridge- and double-bonded oxygen on OH-terminated Si quantum dots: A density-functional–Hartree–Fock studyKönig, D. / Rudd, J. / Conibeer, G. / Green, M.A. et al. | 2008
- 122
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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in SiLondos, C.A. / Antonaras, G.D. / Potsidi, M.S. / Misiuk, A. et al. | 2008
- 128
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Microscopic underpinnings of defect nucleation and growth in silicon crystal growth and wafer processingSinno, Talid / Dai, Jianguo / Kapur, Sumeet S. et al. | 2008
- 134
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Investigation of intragrain defects in pc-Si layers obtained by aluminum-induced crystallization: Comparison of layers made by low and high temperature epitaxyVan Gestel, D. / Dogan, P. / Gordon, I. / Bender, H. / Lee, K.Y. / Beaucarne, G. / Gall, S. / Poortmans, J. et al. | 2009
- 138
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Gigantic uphill drift of vacancies and self-interstitials in siliconVoronkov, V.V. / Falster, R. et al. | 2008
- 142
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Evidence of energy levels due to nitrogen dimers in siliconVoronkova, G.I. / Batunina, A.V. / Voronkov, V.V. / Falster, R. et al. | 2008
- 145
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Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperaturesZeng, Yuheng / Yang, Deren / Ma, Xiangyang / Chen, Jiahe / Que, Duanlin et al. | 2008
- 149
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Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped siliconZirkelbach, F. / Lindner, J.K.N. / Nordlund, K. / Stritzker, B. et al. | 2008
- 153
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Cavities at the Si projected range by high dose and energy Si ion implantation in SiCanino, M. / Regula, G. / Lancin, M. / Xu, M. / Pichaud, B. / Ntzoenzok, E. / Barthe, M.F. et al. | 2008
- 157
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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiationEmtsev, V.V. / Emtsev, V.V. Jr. / Kozlovskii, V.V. / Misiuk, A. / Oganesyan, G.A. / Poloskin, D.S. / Sobolev, N.A. / Tropp, E.A. et al. | 2008
- 160
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Electron spin resonance study of the Si-B5 paramagnetic center in neutron-irradiated heat-treated siliconKeunen, K. / Stesmans, A. et al. | 2008
- 164
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He implantation induced nanovoids in crystalline SiKilpeläinen, S. / Kuitunen, K. / Slotte, J. / Tuomisto, F. / Bruno, E. / Mirabella, S. / Priolo, F. et al. | 2008
- 168
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The role of the substrate in the high energy boron implantation damage recoveringMica, I. / Di Piazza, L. / Laurin, L. / Mariani, M. / Mauri, A.G. / Polignano, M.L. / Ricci, E. / Sammiceli, F. / Spoldi, G. et al. | 2008
- 173
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Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantationRomano, E. / Narducci, D. / Corni, F. / Frabboni, S. / Ottaviani, G. / Tonini, R. / Cerofolini, G.F. et al. | 2008
- 177
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Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial SiVines, L. / Monakhov, E.V. / Jensen, J. / Kuznetsov, A.Yu. / Svensson, B.G. et al. | 2008
- 182
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Hydrogen transformations in Si-based solar structures studied by precise FTIR spectroscopyAkhmetov, V.D. / Ulyashin, A.G. / Holt, A. / Kittler, M. et al. | 2009
- 186
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Modulated photoluminescence as an effective lifetime measurement method: Application to a-Si:H/c-Si heterojunction solar cellsChouffot, R. / Brezard-Oudot, A. / Kleider, J.-P. / Brüggemann, R. / Labrune, M. / Roca i Cabarrocas, P. / Ribeyron, P.-J. et al. | 2008
- 190
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Optical spectroscopy of carrier relaxation processes in Si nanocrystalsde Boer, W. / Zhang, H. / Gregorkiewicz, T. et al. | 2008
- 194
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Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in siliconFraser, K.J. / Falster, R.J. / Wilshaw, P.R. et al. | 2008
- 198
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Electron spin resonance study of a platinum–manganese complex in siliconIshiyama, T. / Murakami, N. / Kamiura, Y. / Yamashita, Y. et al. | 2008
- 202
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Study on the time decay of excess carriers in solar siliconLauer, K. / Laades, A. / Übensee, H. / Lawerenz, A. et al. | 2008
- 206
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Evaluation of local strain in Si using UV-Raman spectroscopyOgura, Atsushi / Kosemura, Daisuke / Takei, Munehisa / Uchida, Hidetsugu / Hattori, Nobuyoshi / Yoshimaru, Masaki / Mayuzumi, Satoru / Wakabayashi, Hitoshi et al. | 2008
- 212
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Characterization of up-converter layers on bifacial silicon solar cellsPan, A.C. / del Cañizo, C. / Luque, A. et al. | 2008
- 216
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Light-beam-induced current measurements on copper–nickel co-contaminated Cz-silicon bicrystalsSaring, P. / Rudolf, C. / Stolze, L. / Seibt, M. et al. | 2008
- 219
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Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayerAngermann, H. / Conrad, E. / Korte, L. / Rappich, J. / Schulze, T.F. / Schmidt, M. et al. | 2008
- 224
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Competitive iron gettering between internal gettering sites and boron implantation in CZ-siliconAsghar, M.I. / Yli-Koski, M. / Savin, H. / Haarahiltunen, A. / Talvitie, H. / Sinkkonen, J. et al. | 2008
- 228
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Overview of phosphorus diffusion and gettering in multicrystalline siliconBentzen, A. / Holt, A. et al. | 2008
- 235
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Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulationChen, Jiahe / Yang, Deren / Ma, Xiangyang / Que, Duanlin et al. | 2008
- 239
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Is impurity gettering or passivation by hydrogen the improvement key of mc-Si solar cells during processing steps?Dubois, S. / Enjalbert, N. / Warchol, F. / Martinuzzi, S. et al. | 2008
- 242
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Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:HFocsa, A. / Slaoui, A. / Charifi, H. / Stoquert, J.P. / Roques, S. et al. | 2009
- 248
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As-grown iron precipitates and gettering in multicrystalline siliconHaarahiltunen, A. / Savin, H. / Yli-Koski, M. / Talvitie, H. / Asghar, M.I. / Sinkkonen, J. et al. | 2008
- 253
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Influence of chromium on minority carrier properties in intentionally contaminated n-type mc-Si wafersMartinuzzi, S. / Warchol, F. / Dubois / Enjalbert, N. et al. | 2008
- 256
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Limiting factors of gettering treatments in mc-Si wafers from the metallurgical routePérichaud, I. / Martinuzzi, S. / Degoulange, J. / Trassy, C. et al. | 2008
- 259
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Gettering in silicon-on-insulator wafers with polysilicon layerSavin, H. / Yli-Koski, M. / Haarahiltunen, A. / Virkkala, V. / Talvitie, H. / Asghar, M.I. / Sinkkonen, J. / Hintsala, J. et al. | 2008
- 264
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Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaicsSeibt, M. / Abdelbarey, D. / Kveder, V. / Rudolf, C. / Saring, P. / Stolze, L. / Voß, O. et al. | 2008
- 269
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Effect of internal gettering of iron on electrical characteristics of devicesTalvitie, H. / Haarahiltunen, A. / Savin, H. / Yli-Koski, M. / Asghar, M.I. / Sinkkonen, J. et al. | 2008
- 274
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Study of defects and impurities in multicrystalline silicon grown from metallurgical silicon feedstockBinetti, S. / Libal, J. / Acciarri, M. / Di Sabatino, M. / Nordmark, H. / Øvrelid, E.J. / Walmsley, J.C. / Holmestad, R. et al. | 2008
- 278
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Limitations in the application of the ideal-diode model to the analysis of luminescence from silicon solar cellsBrüggemann, R. / Bauer, G.H. et al. | 2008
- 282
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Isotype bifacial silicon solar cells obtained by ITO spray pyrolysisBruk, L. / Fedorov, V. / Sherban, D. / Simashkevich, A. / Usatii, I. / Bobeico, E. / Morvillo, P. et al. | 2008
- 286
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Proof of concept of an epitaxy-free layer-transfer process for silicon solar cells based on the reorganisation of macropores upon annealingDepauw, V. / Gordon, I. / Beaucarne, G. / Poortmans, J. / Mertens, R. / Celis, J.-P. et al. | 2008
- 291
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Study of interdigitated back contact silicon heterojunctions solar cells by two-dimensional numerical simulationsDiouf, D. / Kleider, J.P. / Desrues, T. / Ribeyron, P.-J. et al. | 2008
- 295
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Optimization of roughness, reflectance and photoluminescence for acid textured mc-Si solar cells etched at different HF/HNO3 concentrationsGonzález-Díaz, B. / Guerrero-Lemus, R. / Díaz-Herrera, B. / Marrero, N. / Méndez-Ramos, J. / Borchert, Dietmar et al. | 2008
- 299
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Acceptable contamination levels in solar grade silicon: From feedstock to solar cellHofstetter, J. / Lelièvre, J.F. / del Cañizo, C. / Luque, A. et al. | 2008
- 305
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Electrical properties of n-type multicrystalline silicon for photovoltaic application—Impact of high temperature boron diffusionJourdan, J. / Dubois, S. / Cabal, R. / Veschetti, Y. et al. | 2008
- 309
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A comparison of the etching behaviour of the FS Cr-free SOI with that of the Secco etching solution on silicon-on-insulator substratesMähliß, Jochen / Abbadie, Alexandra / Kolbesen, Bernd O. et al. | 2008
- 314
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Electronic properties of the interface between Si and sputter deposited indium-tin oxideMonakhov, E.V. / Balasundaraprabhu, R. / Muthukumarasamy, N. / Svensson, B.G. et al. | 2008
- 318
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Influence of metal grid patterns on the performance of silicon solar cells at different illumination levelsMorvillo, P. / Bobeico, E. / Formisano, F. / Roca, F. et al. | 2008
- 322
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Detailed balance limit for solar cell efficiencyQueisser, Hans J. et al. | 2008
- 329
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Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glassRau, B. / Weber, T. / Gorka, B. / Dogan, P. / Fenske, F. / Lee, K.Y. / Gall, S. / Rech, B. et al. | 2008
- 333
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Black surface structures for crystalline silicon solar cellsYoo, Jinsu / Yu, Gwonjong / Yi, Junsin et al. | 2008
- 338
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Defect engineering via ion implantation to control B diffusion in SiCanino, M. / Regula, G. / Xu, M. / Ntzoenzok, E. / Pichaud, B. et al. | 2008
- 342
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Hydrogenation of platinum introduced in silicon by radiation enhanced diffusionHazdra, P. / Komarnitskyy, V. / Buršíková, V. et al. | 2008
- 346
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Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ionsHazdra, P. / Komarnitskyy, V. et al. | 2008
- 350
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Copper decoration and etching of crystal defects in SOI materialsIdrisi, Hanan / Kolbesen, Bernd O. et al. | 2008
- 355
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Thermal annealing of SiC thin films with varying stoichiometryKuenle, Matthias / Janz, Stefan / Eibl, Oliver / Berthold, Christoph / Presser, Volker / Nickel, Klaus-Georg et al. | 2008
- 361
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Stress-mediated redistribution of Mn in annealed Si:MnMisiuk, A. / Barcz, A. / Bak-Misiuk, J. / Romanowski, P. / Chow, L. / Choi, E. et al. | 2008
- 365
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Co-precipitation of copper and nickel in crystalline siliconRudolf, C. / Saring, P. / Stolze, L. / Seibt, M. et al. | 2008
- 369
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Author Index| 2009
- 372
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Subject Index| 2009
- CO2
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Editorial Board| 2009