Achieving low-V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack (English)
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In:
Solid state electronics
;
52
, 9
; 1303-1312
;
2008
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ISSN:
- Article (Journal) / Print
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Title:Achieving low-V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack
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Contributors:Veloso, A. ( author ) / Yu, H.Y. / Lauwers, A. / Chang, S.Z. / Adelmann, C. / Onsia, B. / Demand, M. / Brus, S. / Vrancken, C. / Singanamalla, R.
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Published in:Solid state electronics ; 52, 9 ; 1303-1312
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Publisher:
- New search for: Elsevier
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Place of publication:Amsterdam [u.a.]
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Publication date:2008
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 770/3480/5670
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Keywords:
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Classification:
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Source:
Table of contents – Volume 52, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1265
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Special issue devoted to the ESSDERC’07 conferenceSchmitz, Jurriaan / Thewes, Roland et al. | 2008
- 1266
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45nm/32nm CMOS – Challenge and perspectiveIshimaru, Kazunari et al. | 2008
- 1274
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopyRaeissi, B. / Piscator, J. / Engström, O. / Hall, S. / Buiu, O. / Lemme, M.C. / Gottlob, H.D.B. / Hurley, P.K. / Cherkaoui, K. / Osten, H.J. et al. | 2008
- 1280
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Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertionKakushima, K. / Okamoto, K. / Adachi, M. / Tachi, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Hattori, T. / Iwai, H. et al. | 2008
- 1285
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105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafersLe Royer, C. / Clavelier, L. / Tabone, C. / Romanjek, K. / Deguet, C. / Sanchez, L. / Hartmann, J.-M. / Roure, M.-C. / Grampeix, H. / Soliveres, S. et al. | 2008
- 1291
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Multi-gate devices for the 32nm technology node and beyondCollaert, N. / De Keersgieter, A. / Dixit, A. / Ferain, I. / Lai, L.-S. / Lenoble, D. / Mercha, A. / Nackaerts, A. / Pawlak, B.J. / Rooyackers, R. et al. | 2008
- 1297
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Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOIBernard, Emilie / Ernst, T. / Guillaumot, B. / Vulliet, N. / Garros, X. / Maffini-Alvaro, V. / Coronel, P. / Skotnicki, T. / Deleonibus, S. et al. | 2008
- 1303
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Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stackVeloso, A. / Yu, H.Y. / Lauwers, A. / Chang, S.Z. / Adelmann, C. / Onsia, B. / Demand, M. / Brus, S. / Vrancken, C. / Singanamalla, R. et al. | 2008
- 1312
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Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approachBuddharaju, K.D. / Singh, N. / Rustagi, S.C. / Teo, Selin H.G. / Lo, G.Q. / Balasubramanian, N. / Kwong, D.L. et al. | 2008
- 1318
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A new definition of threshold voltage in Tunnel FETsBoucart, Kathy / Ionescu, Adrian Mihai et al. | 2008
- 1324
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Examination of the high-frequency capability of carbon nanotube FETsPulfrey, David L. / Chen, Li et al. | 2008
- 1329
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Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materialsGrassi, Roberto / Poli, Stefano / Reggiani, Susanna / Gnani, Elena / Gnudi, Antonio / Baccarani, Giorgio et al. | 2008
- 1336
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Punch-through impact ionization MOSFET (PIMOS): From device principle to applicationsMoselund, K.E. / Bouvet, D. / Pott, V. / Meinen, C. / Kayal, M. / Ionescu, A.M. et al. | 2008
- 1345
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Single-grain Si thin-film transistors SPICE model, analog and RF circuit applicationsBaiano, A. / Danesh, M. / Saputra, N. / Ishihara, R. / Long, J. / Metselaar, W. / Beenakker, C.I.M. / Karaki, N. / Hiroshima, Y. / Inoue, S. et al. | 2008
- 1353
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Investigation and improvement of DMOS switches under fast electro-thermal cycle stressSmorodin, Tobias / Nelle, Peter / Busch, Jörg / Wilde, Jürgen / Glavanovics, Michael / Stecher, Matthias et al. | 2008
- 1359
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Aluminum nitride for heatspreading in RF IC’sLa Spina, L. / Iborra, E. / Schellevis, H. / Clement, M. / Olivares, J. / Nanver, L.K. et al. | 2008
- 1364
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Joining microelectronics and microionics: Nerve cells and brain tissue on semiconductor chipsFromherz, Peter et al. | 2008
- 1374
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Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power invertersTsamados, Dimitrios / Singh Chauhan, Yogesh / Eggimann, Christoph / Akarvardar, Kerem / Philip Wong, H.-S. / Mihai Ionescu, Adrian et al. | 2008
- 1382
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Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabricationLi, Y. / Parkes, W. / Haworth, L.I. / Stokes, A.A. / Muir, K.R. / Li, P. / Collin, A.J. / Hutcheon, N.G. / Henderson, R. / Rae, B. et al. | 2008
- 1388
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Electrothermal noise analysis in frequency tuning of nanoresonatorsJun, Seong Chan / Son, Hyungbin / Baik, C.W. / Kim, J.M. / Moon, S.W. / Kim, H. Jin / Huang, X.M.H. / Hone, J. et al. | 2008
- 1394
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Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulatorBadila-Ciressan, N.D. / Mazza, M. / Grogg, D. / Ionescu, A.M. et al. | 2008
- 1401
-
CMOS image sensors: State-of-the-artTheuwissen, Albert J.P. et al. | 2008
- 1407
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Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiationRao, Padmakumar R. / Wang, Xinyang / Theuwissen, Albert J.P. et al. | 2008
- 1407
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Degradation of CMOS image sensors in deep-submicron technology due to g-irradiationRao, P. R. / Wang, X. / Theuwissen, A. J. et al. | 2008
- 1414
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The Monte Carlo approach to transport modeling in deca-nanometer MOSFETsSangiorgi, Enrico / Palestri, Pierpaolo / Esseni, David / Fiegna, Claudio / Selmi, Luca et al. | 2008
- 1424
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On a computationally efficient approach to boron-interstitial clusteringSchermer, J. / Martinez-Limia, A. / Pichler, P. / Zechner, C. / Lerch, W. / Paul, S. et al. | 2008
- 1430
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From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in siliconMartin-Bragado, Ignacio / Avci, Ibrahim / Zographos, Nikolas / Jaraiz, Martin / Castrillo, Pedro et al. | 2008
- 1437
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Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substratesPham, A.T. / Jungemann, C. / Meinerzhagen, B. et al. | 2008
- 1443
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Status and challenges of phase change memory modelingLacaita, A.L. / Ielmini, D. / Mantegazza, D. et al. | 2008
- 1452
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Integration of CVD silicon nanocrystals in a 32Mb NOR flash memoryJacob, S. / De Salvo, B. / Perniola, L. / Festes, G. / Bodnar, S. / Coppard, R. / Thiery, J.F. / Pate-Cazal, T. / Bongiorno, C. / Lombardo, S. et al. | 2008
- 1460
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Long term charge retention dynamics of SONOS cellsArreghini, A. / Akil, N. / Driussi, F. / Esseni, D. / Selmi, L. / van Duuren, M.J. et al. | 2008
- 1467
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Phase-change memory technology with self-aligned mTrench cell architecture for 90nm node and beyondPirovano, A. / Pellizzer, F. / Tortorelli, I. / Rigano, A. / Harrigan, R. / Magistretti, M. / Petruzza, P. / Varesi, E. / Redaelli, A. / Erbetta, D. et al. | 2008
- 1467
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Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyondPirovano, A. / Pellizzer, F. / Tortorelli, I. / Riganó, A. / Harrigan, R. / Magistretti, M. / Petruzza, P. / Varesi, E. / Redaelli, A. / Erbetta, D. et al. | 2008
- IFC
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Editorial Board| 2008