Bandgap engineering of 1.3μm quantum dot structures for terahertz (THz) emission (English)
- New search for: Ngo, C.Y.
- New search for: Ngo, C.Y.
- New search for: Yoon, S.F.
- New search for: Teng, J.H.
In:
Journal of crystal growth
;
323
, 1
; 211-215
;
2011
-
ISSN:
- Article (Journal) / Print
-
Title:Bandgap engineering of 1.3μm quantum dot structures for terahertz (THz) emission
-
Contributors:
-
Published in:Journal of crystal growth ; 323, 1 ; 211-215
-
Publisher:
- New search for: Elsevier
-
Place of publication:Amsterdam [u.a.]
-
Publication date:2011
-
ISSN:
-
ZDBID:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 38.31 / 33.61 / 35.90
- Further information on Basic classification
- New search for: 535/3475
-
Keywords:
-
Classification:
-
Source:
Table of contents – Volume 323, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Editor's prefaceGeelhaar, Lutz / Heyn, Christian / Wieck, Andreas D. et al. | 2011
- 3
-
Sixteenth International Conference on Molecular Beam Epitaxy| 2011
- 3
-
Sixteenth International Conference on Molecular Beam Epitaxy:Berlin, Germany, August 22–27, 2010| 2011
- 5
-
Crystallization of amorphous InAs/GaAs films on GaAsHey, R. / Santos, P.V. / Luna, E. / Flissikowski, T. / Jahn, U. et al. | 2010
- 9
-
Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxyZander, M. / Nishinaga, J. / Iga, K. / Horikoshi, Y. et al. | 2010
- 13
-
Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxySasaki, Takuo / Suzuki, Hidetoshi / Sai, Akihisa / Takahasi, Masamitu / Fujikawa, Seiji / Kamiya, Itaru / Ohshita, Yoshio / Yamaguchi, Masafumi et al. | 2010
- 17
-
X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxyLin, Hai / Huo, Yijie / Rong, Yiwen / Chen, Robert / Kamins, Theodore I. / Harris, James S. et al. | 2010
- 21
-
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBESong, Yuxin / Wang, Shumin / Cao, Xiaohui / Lai, Zonghe / Sadeghi, Mahdad et al. | 2010
- 26
-
Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBEKuboya, S. / Kuroda, M. / Katayama, R. / Onabe, K. et al. | 2011
- 30
-
Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum wellIshikawa, Fumitaro / Morifuji, Masato / Nagahara, Kenichi / Uchiyama, Masayuki / Higashi, Kotaro / Kondow, Masahiko et al. | 2010
- 35
-
AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrateTokranov, V. / Nagaiah, P. / Yakimov, M. / Matyi, R.J. / Oktyabrsky, S. et al. | 2011
- 39
-
Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSbGozu, Shin-ichiro / Mozume, Teruo / Ishikawa, Hiroshi et al. | 2011
- 42
-
Si doping of MBE grown bulk GaAsSb on InPDetz, H. / Klang, P. / Andrews, A.M. / Schrenk, W. / Strasser, G. et al. | 2010
- 45
-
Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well systemFujiwara, K. / Jahn, U. / Luna, E. / Grahn, H.T. et al. | 2010
- 48
-
(100) GaAs/AlxGa1−xAs heterostructures for Zeeman spin splitting studies of hole quantum wiresTrunov, K. / Reuter, D. / Ludwig, A. / Chen, J.C.H. / Klochan, O. / Micolich, A.P. / Hamilton, A.R. / Wieck, A.D. et al. | 2010
- 52
-
Effect of strain on the Dresselhaus effect of InAs-based heterostructuresMatsuda, Takashi / Yoh, Kanji et al. | 2010
- 56
-
Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurementsBiermann, K. / Cerda-Méndez, E.A. / Höricke, M. / Santos, P.V. / Hey, R. et al. | 2010
- 60
-
Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8eV for solar energy conversion devicesNovikov, S.V. / Staddon, C.R. / Foxon, C.T. / Yu, K.M. / Broesler, R. / Hawkridge, M. / Liliental-Weber, Z. / Denlinger, J. / Demchenko, I. / Luckert, F. et al. | 2010
- 64
-
Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorptionKotsar, Y. / Kandaswamy, P.K. / Das, A. / Sarigiannidou, E. / Bellet-Amalric, E. / Monroy, E. et al. | 2010
- 68
-
Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxyMizerov, A.M. / Jmerik, V.N. / Yagovkina, M.A. / Troshkov, S.I. / Kop'ev, P.S. / Ivanov, S.V. et al. | 2010
- 72
-
Growth and characterization of InGaN by RF-MBEKraus, A. / Hammadi, S. / Hisek, J. / Buß, R. / Jönen, H. / Bremers, H. / Rossow, U. / Sakalauskas, E. / Goldhahn, R. / Hangleiter, A. et al. | 2010
- 76
-
Growth of non-polar GaN on LiGaO2 by plasma-assisted MBESchuber, R. / Chen, Y.L. / Shih, C.H. / Huang, T.H. / Vincze, P. / Lo, I. / Chang, L.W. / Schimmel, Th. / Chou, M.M.C. / Schaadt, D.M. et al. | 2010
- 80
-
Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystalsNovikov, S.V. / Staddon, C.R. / Foxon, C.T. / Luckert, F. / Edwards, P.R. / Martin, R.W. / Kent, A.J. et al. | 2010
- 84
-
Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substratesKemper, R.M. / Weinl, M. / Mietze, C. / Häberlen, M. / Schupp, T. / Tschumak, E. / Lindner, J.K.N. / Lischka, K. / As, D.J. et al. | 2010
- 88
-
Carbon as an acceptor in cubic GaN/3C–SiCZado, A. / Tschumak, E. / Gerlach, J.W. / Lischka, K. / As, D.J. et al. | 2011
- 91
-
RF-MBE growth of Si doped cubic GaN and hexagonal phase incorporated c-AlGaN films on MgO(001) substratesKakuda, M. / Kuboya, S. / Onabe, K. et al. | 2011
- 95
-
Rare-earth oxide superlattices on Si(111)Grosse, Frank / Bokoch, Sergiy / Behnke, Steffen / Proessdorf, Andre / Niehle, Michael / Trampert, Achim / Braun, Wolfgang / Riechert, Henning et al. | 2011
- 99
-
Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8AsLin, C.A. / Chiu, H.C. / Chiang, T.H. / Chang, Y.C. / Lin, T.D. / Kwo, J. / Wang, W.-E. / Dekoster, J. / Heyns, M. / Hong, M. et al. | 2011
- 103
-
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxyPriyantha, W. / Radhakrishnan, G. / Droopad, R. / Passlack, M. et al. | 2010
- 107
-
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaNChang, W.H. / Chang, P. / Lee, W.C. / Lai, T.Y. / Kwo, J. / Hsu, C.-H. / Hong, J.M. / Hong, M. et al. | 2010
- 111
-
Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphirePetukhov, Vladimir / Bakin, Andrey / Tsiaoussis, Ioannis / Rothman, Johan / Ivanov, Sergey / Stoemenos, John / Waag, Andreas et al. | 2011
- 114
-
Metastable II–VI sulphides: Growth, characterization and stabilityPrior, K.A. / Bradford, C. / Davidson, I.A. / Moug, R.T. et al. | 2010
- 122
-
Optical characterization of isoelectronic ZnSe1−xOx semiconductorsLin, Y.C. / Chung, H.L. / Ku, J.T. / Chen, C.Y. / Chien, K.F. / Fan, W.C. / Lee, L. / Chyi, J.I. / Chou, W.C. / Chang, W.H. et al. | 2010
- 127
-
Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applicationsFan, J. / Ouyang, L. / Liu, X. / Ding, D. / Furdyna, J.K. / Smith, D.J. / Zhang, Y.-H. et al. | 2010
- 132
-
Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (001) substrates by molecular beam epitaxyKumagai, Y. / Imada, S. / Baba, T. / Kobayashi, M. et al. | 2011
- 135
-
Growth and characterization of C60/GaAs interfaces and C60 doped GaAsNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2010
- 140
-
Optical and structural properties of Pb1−xEuxTe/CdTe//GaAs (001) heterostructures grown by MBESmajek, E. / Szot, M. / Kowalczyk, L. / Domukhovski, V. / Taliashvili, B. / Dziawa, P. / Knoff, W. / łusakowska, E. / Reszka, A. / Kowalski, B. et al. | 2010
- 144
-
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)Fissel, A. / Krügener, J. / Osten, H.J. et al. | 2010
- 150
-
Nano-clustered Pd catalysts formed on GaN surface for green chemistryHirayama, Motoi / Ueta, Yukiko / Konishi, Tomoya / Tsukamoto, Shiro et al. | 2011
- 154
-
Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation techniqueAkahane, Kouichi / Yamamoto, Naokatsu et al. | 2010
- 158
-
Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (001) grown using different As speciesTakata, Ayami / Oshima, Ryuji / Shoji, Yasushi / Akahane, Kouichi / Okada, Yoshitaka et al. | 2010
- 161
-
Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dotsDas, A. / Sinha, P. / Kotsar, Y. / Kandaswamy, P.K. / Dimitrakopulos, G.P. / Kehagias, Th. / Komninou, Ph. / Nataf, G. / De Mierry, P. / Monroy, E. et al. | 2010
- 164
-
High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layersLiu, Wei-Sheng / Wu, Hong-Ming / Liao, Yu-Ann / Chyi, Jen-Inn / Chen, Wen-Yen / Hsu, Tzu-Min et al. | 2010
- 167
-
Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperatureNgo, C.Y. / Yoon, S.F. / Tanoto, H. / Hui, H.K. / Lim, D.R. / Wong, Vincent / Chua, S.J. et al. | 2010
- 172
-
Power and temperature dependent magneto-photoluminescence of the asymmetric double layers of quantumdotsLee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Dobrowolska, M. / Furdyna, J.K. et al. | 2010
- 176
-
Composition uniformity of site-controlled InAs/GaAs quantum dotsBiasiol, G. / Baranwal, V. / Heun, S. / Prasciolu, M. / Tormen, M. / Locatelli, A. / Mentes, T.O. / Niño, M.A. / Sorba, L. et al. | 2010
- 180
-
Effects of nano-pattern size on the property of InAs site-controlled quantum dotsCheng, Chien-Chia / Meneou, K. / Cheng, K.Y. et al. | 2010
- 183
-
Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dotsTommila, J. / Tukiainen, A. / Viheriälä, J. / Schramm, A. / Hakkarainen, T. / Aho, A. / Stenberg, P. / Dumitrescu, M. / Guina, M. et al. | 2010
- 187
-
Growth and annealing of InAs quantum dots on pre-structured GaAs substratesHelfrich, M. / Hu, D.Z. / Hendrickson, J. / Gehl, M. / Rülke, D. / Gröger, R. / Litvinov, D. / Linden, S. / Wegener, M. / Gerthsen, D. et al. | 2010
- 191
-
Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light sourceOzaki, N. / Takeuchi, K. / Ohkouchi, S. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. / Hogg, R.A. et al. | 2010
- 194
-
Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devicesHuggenberger, A. / Schneider, C. / Drescher, C. / Heckelmann, S. / Heindel, T. / Reitzenstein, S / Kamp, M. / Höfling, S. / Worschech, L. / Forchel, A. et al. | 2010
- 198
-
Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substratesNovikov, P. / Smagina, J. / Vlasov, D. / Deryabin, A. / Kozhukhov, A. / Dvurechenskii, A. et al. | 2010
- 201
-
Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substratesTukiainen, A. / Tommila, J. / Aho, A. / Schramm, A. / Viheriälä, J. / Ahorinta, R. / Dumitrescu, M. / Pessa, M. / Guina, M. et al. | 2011
- 206
-
Bimodal optical characteristics of lateral InGaAs quantum dot moleculesThongkamkoon, N. / Patanasemakul, N. / Siripitakchai, N. / Thainoi, S. / Panyakeow, S. / Kanjanachuchai, S. et al. | 2010
- 211
-
Bandgap engineering of 1.3μm quantum dot structures for terahertz (THz) emissionNgo, C.Y. / Yoon, S.F. / Teng, J.H. et al. | 2010
- 215
-
Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55μm with low optical degradationMilla, M.J. / Guzmán, A. / Gargallo-Caballero, R. / Ulloa, J.M. / Hierro, A. et al. | 2010
- 219
-
Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)Kamiya, Itaru / Shirasaka, Takeo / Shimomura, Kenichi / Tex, David M. et al. | 2011
- 223
-
InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotationThomassen, S. Fretheim / Worren Reenaas, T. / Fimland, B.O. et al. | 2011
- 228
-
Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrateUgur, A. / Hatami, F. / Masselink, W.T. et al. | 2011
- 233
-
GaSb quantum rings grown by metal organic molecular beam epitaxyOdashima, S. / Sakurai, S. / Wada, M. / Suemune, I. et al. | 2011
- 236
-
CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and μ-PL characterisationDavidson, I.A. / Moug, R.T. / Dalgarno, P.A. / Bradford, C. / Warburton, R.J. / Prior, K.A. et al. | 2010
- 241
-
Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriersKitada, Takahiro / Takahashi, Tomoya / Ueyama, Hyuga / Morita, Ken / Isu, Toshiro et al. | 2010
- 244
-
Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiationSmagina, Zh.V. / Novikov, P.L. / Zinovyev, V.A. / Armbrister, V.A. / Teys, S.A. / Dvurechenskii, A.V. et al. | 2010
- 247
-
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)Mortada, Hussein / Dentel, Didier / Derivaz, Mickael / Bischoff, Jean-Luc / Denys, Emmanuel / Moubah, Reda / Ulhaq-Bouillet, Corinne / Werckmann, Jacques et al. | 2010
- 250
-
New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength rangeOhkouchi, S. / Kumagai, N. / Shirane, M. / Igarashi, Y. / Nomura, M. / Ota, Y. / Yorozu, S. / Iwamoto, S. / Arakawa, Y. et al. | 2010
- 254
-
Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substratesTantiweerasophon, W. / Thainoi, S. / Changmuang, P. / Kanjanachuchai, S. / Rattanathammaphan, S. / Panyakeow, S. et al. | 2011
- 259
-
InGaAs quantum dots embedded in DBR-coupled double cavityTzeng, T.E. / Chuang, K.Y. / Liu, Y.C. / Tsuei, B.T. / Lin, E.Y. / Lay, T.S. et al. | 2010
- 263
-
Mechanism and applications of local droplet etchingHeyn, Ch. / Stemmann, A. / Klingbeil, M. / Strelow, Ch. / Köppen, T. / Mendach, S. / Hansen, W. et al. | 2010
- 267
-
Self-assembled GaAs local artificial substrates on Si by droplet epitaxyBietti, S. / Somaschini, C. / Koguchi, N. / Frigeri, C. / Sanguinetti, S. et al. | 2010
- 271
-
Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(001) by droplet epitaxyBoonpeng, P. / Jevasuwan, W. / Nuntawong, N. / Thainoi, S. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2010
- 275
-
InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxyJevasuwan, Wipakorn / Boonpeng, Poonyasiri / Thainoi, Supachok / Panyakeow, Somsak / Ratanathammaphan, Somchai et al. | 2010
- 279
-
Outer zone morphology in GaAs ring/disk nanostructures by droplet epitaxySomaschini, C. / Bietti, S. / Fedorov, A. / Koguchi, N. / Sanguinetti, S. et al. | 2010
- 282
-
Surface morphology and photoluminescence of InGaAs quantum rings grown by droplet epitaxy with varying In0.5Ga0.5 droplet amountPankaow, Naraporn / Thainoi, Supachok / Panyakeow, Somsak / Ratanathammaphan, Somchai et al. | 2010
- 286
-
Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensationSchupp, T. / Meisch, T. / Neuschl, B. / Feneberg, M. / Thonke, K. / Lischka, K. / As, D.J. et al. | 2011
- 290
-
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxyUrbańczyk, A. / Hamhuis, G.J. / Nötzel, R. et al. | 2011
- 293
-
GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowireJabeen, F. / Patriarche, G. / Glas, F. / Harmand, J.-C. et al. | 2010
- 297
-
On the growth of InAs nanowires by molecular beam epitaxyMartelli, Faustino / Rubini, Silvia / Jabeen, Fauzia / Felisari, Laura / Grillo, Vincenzo et al. | 2010
- 301
-
Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxyBabu, J. Bubesh / Yoh, Kanji et al. | 2010
- 304
-
Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxyLugani, Lorenzo / Ercolani, Daniele / Beltram, Fabio / Sorba, Lucia et al. | 2010
- 307
-
Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxyHilse, M. / Takagaki, Y. / Ramsteiner, M. / Herfort, J. / Breuer, S. / Geelhaar, L. / Riechert, H. et al. | 2010
- 311
-
Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparisonBreuer, Steffen / Hilse, Maria / Geelhaar, Lutz / Riechert, Henning et al. | 2010
- 315
-
MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (111)Si substratesPaek, Jihyun / Yamaguchi, Masahito / Amano, Hiroshi et al. | 2010
- 319
-
Growth and properties of self-assembled InP-nanoneedles on (001) InP by gas source MBEChashnikova, M. / Mogilatenko, A. / Fedosenko, O. / Bryksa, V. / Petrov, A. / Machulik, S. / Semtsiv, M.P. / Neumann, W. / Masselink, W.T. et al. | 2010
- 323
-
Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorodsTambo, H. / Hasegawa, S. / Kameoka, H. / Zhou, Y.K. / Emura, S. / Asahi, H. et al. | 2010
- 326
-
GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growthVézian, S. / Alloing, B. / Zúñiga-Pérez, J. et al. | 2010
- 330
-
Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysisden Hertog, M. / Elouneg-Jamroz, M. / Bellet-Amalric, E. / Bounouar, S. / Bougerol, C. / André, R. / Genuist, Y. / Poizat, J.P. / Kheng, K. / Tatarenko, S. et al. | 2010
- 334
-
Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam EpitaxyPorret, C. / Devillers, T. / Jain, A. / Dujardin, R. / Barski, A. et al. | 2010
- 340
-
Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBETran, Lien / Hatami, Fariba / Masselink, W.T. / Herfort, Jens / Trampert, Achim et al. | 2010
- 344
-
Photoreflectance study of GaMnAs layers grown by MBEMartínez-Velis, I. / Contreras-Guerrero, R. / Rojas-Ramírez, J.S. / Ramírez-López, M. / Gallardo-Hernández, S. / Kudriatsev, Y. / Vázquez-López, C. / Jiménez-Sandoval, S. / Rangel-Kuoppa, V.-T. / López-López, M. et al. | 2010
- 348
-
Molecular beam epitaxy of LiMnAsNovák, V. / Cukr, M. / Šobáň, Z. / Jungwirth, T. / Martí, X. / Holý, V. / Horodyská, P. / Němec, P. et al. | 2010
- 351
-
Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxyTawil, S.N.M. / Krishnamurthy, D. / Kakimi, R. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2010
- 355
-
Cu-doped nitrides: Promising candidates for a nitride based spin-alignerGanz, P.R. / Fischer, G. / Sürgers, C. / Schaadt, D.M. et al. | 2010
- 359
-
Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)Gao, Cunxu / Brandt, Oliver / Lähnemann, Jonas / Herfort, Jens / Schönherr, Hans-Peter / Jahn, Uwe / Jenichen, Bernd et al. | 2010
- 363
-
Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperatureHassan, M. / Springholz, G. / Lechner, R.T. / Groiss, H. / Kirchschlager, R. / Bauer, G. et al. | 2010
- 368
-
Suppression of interfacial intermixing between MBE-grown Heusler alloy Ni2MnIn and (001)InAs or InAs-HEMT structuresBohse, S. / Zolotaryov, A. / Kreuzpaintner, W. / Lott, D. / Kornowski, A. / Stemmann, A. / Heyn, Ch. / Hansen, W. et al. | 2010
- 372
-
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial filmHung, H.Y. / Huang, S.Y. / Chang, P. / Lin, W.C. / Liu, Y.C. / Lee, S.F. / Hong, M. / Kwo, J. et al. | 2010
- 376
-
Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applicationsLudwig, A. / Roescu, R. / Rai, A.K. / Trunov, K. / Stromberg, F. / Li, M. / Soldat, H. / Ebbing, A. / Gerhardt, N.C. / Hofmann, M.R. et al. | 2010
- 380
-
Magneto-optical properties of ZnMnTe/ZnSe quantum dotsFan, W.C. / Ku, J.T. / Chou, W.C. / Chen, W.K. / Chang, W.H. / Yang, C.S. / Chia, C.H. et al. | 2010
- 383
-
Preparation characterization of MnSb–GaAs spin LEDHanna, T. / Yoshida, D. / Munekata, H. et al. | 2010
- 387
-
GaAs on 200mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxyRichter, M. / Rossel, C. / Webb, D.J. / Topuria, T. / Gerl, C. / Sousa, M. / Marchiori, C. / Caimi, D. / Siegwart, H. / Rice, P.M. et al. | 2010
- 393
-
A comparison of the low frequency noise in InSb grown on GaAs and Si by MBEDobbert, Julia / Tran, Lien / Hatami, Fariba / Kunets, Vasyl P. / Salamo, Gregory J. / Ted Masselink, W. et al. | 2010
- 397
-
Selective growth of InSb on localized area of Si(100) by molecular beam epitaxyHara, Shinsuke / Iida, Tomoaki / Nishino, Yuichi / Uchida, Akinori / Horii, Hiroyuki / Fujishiro, Hiroki I. et al. | 2010
- 401
-
Interface engineering for improved growth of GaSb on Si(111)Proessdorf, Andre / Grosse, Frank / Romanyuk, Oleksandr / Braun, Wolfgang / Jenichen, Bernd / Trampert, Achim / Riechert, Henning et al. | 2010
- 405
-
Growth of low defect AlGaSb films on Si (100) using AlSb and InSb quantum dots intermediate layersKyun Noh, Young / Deock Kim, Moon / Eung Oh, Jae / Chul Yang, Woo / Heon Kim, Young et al. | 2011
- 409
-
X-ray study of antiphase domains and their stability in MBE grown GaP on SiLétoublon, A. / Guo, W. / Cornet, C. / Boulle, A. / Véron, M. / Bondi, A. / Durand, O. / Rohel, T. / Dehaese, O. / Chevalier, N. et al. | 2010
- 413
-
Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemesTang, H. / Baribeau, J.-M. / Aers, G.C. / Fraser, J. / Rolfe, S. / Bardwell, J.A. et al. | 2010
- 418
-
GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxyDogan, Pinar / Brandt, Oliver / Pfüller, Carsten / Bluhm, Anne-Kathrin / Geelhaar, Lutz / Riechert, Henning et al. | 2011
- 422
-
Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterizationAlzoubi, T. / Usman, M. / Benyoucef, M. / Reithmaier, J.P. et al. | 2010
- 426
-
Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrateLiang, Y.Y. / Yoon, S.F. / Ngo, C.Y. / Tanoto, H. / Chen, K.P. / Loke, W.K. / Fitzgerald, E.A. et al. | 2010
- 431
-
Nano-crystalline Sb-based compound semiconductor formed on siliconYamamoto, Naokatsu / Akahane, Kouichi / Kawanishi, Tetsuya / Sotobayashi, Hideyuki et al. | 2010
- 434
-
MBE growth of VCSELs for high volume applicationsJäger, Roland / Riedl, Michael C. et al. | 2010
- 438
-
VCSELs with monolithically integrated photodiodes for single-fiber bidirectional data transmission in the Gbit/s rangeWahl, D. / Kern, A. / Stach, M. / Rinaldi, F. / Rösch, R. / Michalzik, R. et al. | 2010
- 442
-
Comparison of InP- and GaSb-based VCSELs emitting at 2.3μm suitable for carbon monoxide detectionBoehm, Gerhard / Bachmann, Alexander / Rosskopf, Jürgen / Ortsiefer, Markus / Chen, Jia / Hangauer, Andreas / Meyer, Ralf / Strzoda, Rainer / Amann, Markus-Christian et al. | 2010
- 442
-
Comparison of InP- and GaSb-based VCSELs emitting at 2.3 micrometer suitable for carbon monoxide detectionBoehm, Gerhard / Bachmann, Alexander / Rosskopf, Juergen / Ortsiefer, Markus / Chen, Jia / Hangauer, Andreas / Meyer, Ralf / Strzoda, Rainer / Amann, Markus-Christian et al. | 2011
- 446
-
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5–2.7μmVizbaras, Kristijonas / Bachmann, Alexander / Arafin, Shamsul / Saller, Kai / Sprengel, Stefan / Boehm, Gerhard / Meyer, Ralf / Amann, Markus-Christian et al. | 2010
- 446
-
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5-2.7 micrometerVizbaras, Kristijonas / Bachmann, Alexander / Arafin, Shamsul / Saller, Kai / Sprengel, Stefan / Boehm, Gerhard / Meyer, Ralf / Amann, Markus-Christian et al. | 2011
- 450
-
Quantum dot lasers grown by gas source molecular-beam epitaxyGong, Q. / Chen, P. / Li, S.G. / Lao, Y.F. / Cao, C.F. / Xu, C.F. / Zhang, Y.G. / Feng, S.L. / Ma, C.H. / Wang, H.L. et al. | 2010
- 454
-
Power scalable 2.5μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxyPaajaste, J. / Koskinen, R. / Nikkinen, J. / Suomalainen, S. / Okhotnikov, O.G et al. | 2010
- 457
-
Lasing in compact microdisks with InAs quantum dots in a well structureHsing, J.Y. / Tzeng, T.E. / Chuang, K.Y. / Lay, T.S. / Kuo, M.Y. / Tsai, Y.Y. / Hsu, K.S. / Shih, M.H. et al. | 2010
- 460
-
Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2°CEibelhuber, M. / Schwarzl, T. / Pichler, S. / Heiss, W. / Springholz, G. et al. | 2010
- 463
-
Uncooled InSb mid-infrared LED used dislocation filtering of AlInSb layerUeno, Koichiro / Gomes Camargo, Edson / Morishita, Tomohiro / Moriyasu, Yoshitaka / Goto, Hiromasa / Kuze, Naohiro et al. | 2010
- 466
-
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodesTseng, Chi-Che / Lin, Wei-Hsun / Wu, Shung-Yi / Chen, Shu-Han / Lin, Shih-Yen et al. | 2010
- 470
-
High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)Zhang, Meng / Banerjee, Animesh / Bhattacharya, Pallab et al. | 2010
- 473
-
InGaAs self-assembly quantum dot for high-speed 1300nm electroabsorption modulatorLin, Chuan-Han / Wu, Jui-pin / Kuo, Yu-zheng / Chiu, Yi-jen / Tzeng, T.E. / Lay, T.S. et al. | 2011
- 477
-
Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriersSamal, N. / Sadofyev, Y.G. / Annamalai, S. / Chen, L. / Samal, A. / Johnson, S.R. et al. | 2010
- 480
-
Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisationGrasse, Christian / Katz, Simeon / Böhm, Gerhard / Vizbaras, Augustinas / Meyer, Ralf / Amann, Markus-Christian et al. | 2010
- 484
-
Scaling the output power of quantum-cascade lasers with a number of cascadesFedosenko, O. / Chashnikova, M. / Machulik, S. / Kischkat, J. / Klinkmüller, M. / Aleksandrova, A. / Monastyrskyi, G. / Semtsiv, M.P. / Masselink, W.T. et al. | 2010
- 488
-
InP-based mid-infrared quantum-cascade laser grown on pre-patterned waferFedosenko, O. / Chashnikova, M. / Machulik, S. / Kischkat, J. / Klinkmüller, M. / Aleksandrova, A. / Monastyrskyi, G. / Semtsiv, M.P. / Masselink, T.W. et al. | 2011
- 491
-
InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infraredLiverini, V. / Bismuto, A. / Nevou, L. / Beck, M. / Gramm, F. / Müller, E. / Faist, J. et al. | 2010
- 496
-
Room temperature absorption in laterally biased quantum infrared detectors fabricated by MBE regrowthGuzmán, Álvaro / San-Román, Rocío / Hierro, Adrián et al. | 2010
- 501
-
Gas source MBE grown Al0.52In0.48P photovoltaic detectorLi, C. / Zhang, Y.G. / Gu, Y. / Wang, K. / Li, A.Z. / Li, Hsby / Shao, X.M. / Fang, J.X. et al. | 2010
- 504
-
Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxyKawaharazuka, A. / Onomitsu, K. / Nishinaga, J. / Horikoshi, Y. et al. | 2011
- 508
-
Photovoltaic response of coupled InGaAs quantum dotsChuang, K.Y. / Tzeng, T.E. / Liu, Y.C. / Tzeng, K.D. / Lay, T.S. et al. | 2011
- 511
-
MBE—Enabling technology beyond Si CMOSChang, P. / Lee, W.C. / Lin, T.D. / Hsu, C.H. / Kwo, J. / Hong, M. et al. | 2010
- 518
-
Achieving very high drain current of 1.23mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFETLin, T.D. / Chang, P. / Wu, Y.D. / Chiu, H.C. / Kwo, J. / Hong, M. et al. | 2011
- 522
-
Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrateGeka, Hirotaka / Yamada, Satoshi / Toita, Masato / Nagase, Kazuhiro / Kuze, Naohiro et al. | 2011
- 525
-
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxyTeng, Teng / Ai, Likun / Xu, Anhuai / Sun, Hao / Zhu, Fuying / Qi, Ming et al. | 2011
- 529
-
MBE growth of high conductivity single and multiple AlN/GaN heterojunctionsCao, Yu / Wang, Kejia / Li, Guowang / Kosel, Tom / Xing, Huili / Jena, Debdeep et al. | 2010
- I
-
Author index| 2011
- IFC
-
Editorial Board| 2011
- v
-
Contents| 2011
- XI
-
Subject index| 2010