High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure (English)
- New search for: Lee, J-H
- New search for: Lee, J-H
- New search for: Lee, J-H
In:
IEEE transactions on electron devices
;
58
, 9
; 3058-3065
;
2011
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ISSN:
- Article (Journal) / Print
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Title:High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure
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Contributors:
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Published in:IEEE transactions on electron devices ; 58, 9 ; 3058-3065
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2011
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
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Source:
Table of contents – Volume 58, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2823
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Changes in the Editorial BoardVerret, Doug et al. | 2011
- 2823
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EDITORIAL - Changes in the Editorial BoardVerret, D et al. | 2011
- 2824
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Atomistic Investigation of Low-Field Mobility in Graphene NanoribbonsBetti, A. / Fiori, G. / Iannaccone, G. et al. | 2011
- 2824
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Silicon and Column IV Semiconductor Devices - Atomistic Investigation of Low-Field Mobility in Graphene NanoribbonsBetti, A et al. | 2011
- 2831
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Interconnect Network Analysis of Many-Core ChipsBalakrishnan, A. / Naeemi, A. et al. | 2011
- 2838
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A New Method for Layout-Dependent Parasitic Capacitance Analysis and Effective Mobility Extraction in Nanoscale Multifinger MOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2011
- 2847
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Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport EffectsNayfeh, O. M. et al. | 2011
- 2854
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An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETsMoreno Perez, Enrique / Roldan Aranda, Juan Bautista / Garcia Ruiz, Francisco J. / Barrera Rosillo, Domingo / Ibanez Perez, Maria Jose / Godoy, A. / Gamiz, F. et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot_bal99lt1 p-i-n Diode CircuitsXing Chen, / Jun-quan Chen, / Huang, Kama / Xiao-Bang Xu, et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot_bal991t1 p-i-n Diode CircuitsChen, Xing / Chen, Jun-quan / Kama, Huang / Xu, Xiao-Bang et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot-ba1991tl p-i-n Diode CircuitsChen, X et al. | 2011
- 2871
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Analytical Correction for Effective Mobility Measurements in MOSFETsMorgensen, M. P. / Lunardi, L. M. et al. | 2011
- 2874
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Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in SiliconGundel, P. / Suwito, D. / Jager, U. / Heinz, F. D. / Warta, W. / Schubert, M. C. et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 StacksVandelli, L et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ StacksVandelli, L. / Padovani, A. / Larcher, L. / Southwick, R. G. / Knowlton, W. B. / Bersuker, G. et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through Formula Not Shown StacksVandelli, L. / Padovani, A. / Larcher, L. / Southwick, R. G. / Knowlton, W. B. / Bersuker, G. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low- $\kappa$ Dielectric MaterialsKubasch, C. / Schumacher, H. / Ruelke, H. / Mayer, U. / Bartha, J. W. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low- Formula Not Shown Dielectric MaterialsKubasch, C. / Schumacher, H. / Ruelke, H. / Mayer, U. / Bartha, J. W. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low-k Dielectric MaterialsKubasch, C et al. | 2011
- 2895
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Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain TunnelingHo, Byron / Nuo Xu, / Tsu-Jae King Liu, et al. | 2011
- 2903
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Theory of the Junctionless Nanowire FETGnani, E. / Gnudi, A. / Reggiani, S. / Baccarani, G. et al. | 2011
- 2911
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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate DielectricMoselund, K. E. / Bjork, M. T. / Schmid, H. / Ghoneim, H. / Karg, S. / Lortscher, E. / Riess, W. / Riel, H. et al. | 2011
- 2911
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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- Formula Not Shown Gate DielectricMoselund, K. E. / Bjork, M. T. / Schmid, H. / Ghoneim, H. / Karg, S. / Lortscher, E. / Riess, W. / Riel, H. et al. | 2011
- 2917
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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High- Formula Not Shown /Metal GateLee, S. H. / Majhi, P. / Ferrer, D. A. / Hung, P. Y. / Huang, J. / Oh, J. / Loh, W. Y. / Sassman, B. / Min, B. G. / Tseng, H. H. et al. | 2011
- 2917
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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-$k$/Metal GateSe-Hoon Lee, / Majhi, P. / Ferrer, D. A. / Pui-Yee Hung, / Huang, J. / Oh, J. / Wei-Yip Loh, / Sassman, B. / Byoung-Gi Min, / Hsing-Huang Tseng, et al. | 2011
- 2924
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Nonvolatile Amorphous-Silicon Thin-Film-Transistor Memory Structure for Drain-Voltage Independent Saturation CurrentYifei Huang, / Wagner, S. / Sturm, J. C. et al. | 2011
- 2928
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Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS ApplicationBongmook Lee, / Lichtenwalner, Daniel J. / Novak, Steven R. / Misra, Veena et al. | 2011
- 2928
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Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High- Formula Not Shown PMOS ApplicationLee, B. / Lichtenwalner, D. J. / Novak, S. R. / Misra, V. et al. | 2011
- 2936
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TCAD Assessment of Device Design Technologies for Enhanced Performance of Nanoscale DG MOSFETSharma, R. K. / Gupta, M. / Gupta, R. S. et al. | 2011
- 2944
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Improving Safe Operating Area of nLDMOS Array With Embedded Silicon Controlled Rectifier for ESD Protection in a 24-V BCD ProcessWen-Yi Chen, / Ming-Dou Ker, et al. | 2011
- 2952
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Characterization of the Variable Retention Time in Dynamic Random Access MemoryHeesang Kim, / Byoungchan Oh, / Younghwan Son, / Kyungdo Kim, / Seon-Yong Cha, / Jae-Goan Jeong, / Sung-Joo Hong, / Hyungcheol Shin, et al. | 2011
- 2959
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Asymmetric Independent-Gate MOSFET SRAM for High StabilityMingu Kang, / Park, H. K. / Wang, J. / Yeap, G. / Jung, S. O. et al. | 2011
- 2966
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3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control GateMoon-Sik Seo, / Sung-Kye Park, / Endoh, Tetsuo et al. | 2011
- 2974
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Development of a New pHEMT-Based Electrostatic Discharge Protection StructureQiang Cui, / Chia-Shih Cheng, / Liou, Juin J. / Hsien-Chin Chiu, et al. | 2011
- 2974
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Compound Semiconductor Devices - Development of a New pHEMT-Based Electrostatic Discharge Protection StructureCui, Q et al. | 2011
- 2981
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Investigations of Novel $\Gamma$-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesChing-Sung Lee, / Bo-Yi Chou, / Sheng-Han Yang, / Wei-Chou Hsu, / Chang-Luen Wu, / Wen Luh Yang, / Don-Gey Liu, / Ming-Yuan Lin, et al. | 2011
- 2981
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Investigations of Novel Γ-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesLee, C-S et al. | 2011
- 2981
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Investigations of Novel Formula Not Shown -Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesLee, C. S. / Chou, B. Y. / Yang, S. H. / Hsu, W. C. / Wu, C. L. / Yang, W. L. / Liu, D. G. / Lin, M. Y. et al. | 2011
- 2990
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InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate OxidesZhao, H. / Chen, Y. / Wang, Y. / Zhou, F. / Xue, F. / Lee, J. et al. | 2011
- 2996
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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical MethodMeneghini, M. / Ronchi, N. / Stocco, A. / Meneghesso, G. / Mishra, U. K. / Yi Pei, / Zanoni, E. et al. | 2011
- 3004
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Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT ModelsJohansen, T. K. / Krozer, V. / Nodjiadjim, V. / Konczykowska, A. / Dupuy, J. / Riet, M. et al. | 2011
- 3012
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A Depletion-Mode In–Ga–Zn–O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level ShifterBinn Kim, / Seung Chan Choi, / Jeong-Soo Lee, / Sun-Jae Kim, / Yong-Ho Jang, / Soo-Young Yoon, / Chang-Dong Kim, / Min-Koo Han, et al. | 2011
- 3012
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Thin Film Devices - A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level ShifterKim, B et al. | 2011
- 3018
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Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO FilmsKimura, M. / Furuta, M. / Kamada, Y. / Hiramatsu, T. / Matsuda, T. / Furuta, H. / Li, C. / Fujita, S. / Hirao, T. et al. | 2011
- 3025
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Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors—Part II: Contact Resistance in Short Channel DevicesTorricelli, F. / Smits, E. C. P. / Meijboom, J. R. / Tripathi, A. K. / Gelinck, G. H. / Colalongo, L. / Kovacs-Vajna, Z. M. / de Leeuw, Dago M. / Cantatore, E. et al. | 2011
- 3034
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Two-Stage Degradation of p-Channel Poly-Si Thin-Film Transistors Under Dynamic Negative Bias Temperature StressJie Zhou, / Mingxiang Wang, / Man Wong, et al. | 2011
- 3042
-
Performance Limits of Monolayer Transition Metal Dichalcogenide TransistorsLeitao Liu, / Kumar, S. B. / Yijian Ouyang, / Jing Guo, et al. | 2011
- 3048
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Amorphous Si Rear Schottky Junction Solar Cell With a LiF/Al Back ElectrodeLiang Fang, / Seung Jae Baik, / Sooyeon Lim, / Seunghyup Yoo, / Koeng Su Lim, et al. | 2011
- 3053
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Optoelectronics, Displays, and Imaging - Analysis of Current Components and Estimation of Internal Quantum Efficiency in Light-Emitting DiodesLee, J-M et al. | 2011
- 3053
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Analysis of Current Components and Estimation of Internal Quantum Efficiency in Light-Emitting DiodesJae-Man Lee, / Sang-Bae Kim, et al. | 2011
- 3058
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High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN HeterostructureJae-Hoon Lee, / Jung-Hee Lee, et al. | 2011
- 3065
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Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power ApplicationsRodriguez, A. / Vega, D. / Najar, R. / Pina, M. et al. | 2011
- 3065
-
Solid-State Power and High Voltage Devices - Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power ApplicationsRodríguez, A et al. | 2011
- 3072
-
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS TransistorsReggiani, S. / Poli, S. / Denison, M. / Gnani, E. / Gnudi, A. / Baccarani, G. / Pendharkar, S. / Wise, R. et al. | 2011
- 3081
-
A Quasi-Two-Dimensional Model for High-Power RF LDMOS TransistorsEverett, J. P. / Kearney, M. J. / Rueda, H. / Johnson, E. M. / Aaen, P. H. / Wood, J. / Snowden, C. M. et al. | 2011
- 3089
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Materials, Processing, and Packaging - Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low-k: Dielectric TDDB ModelingChen, F et al. | 2011
- 3089
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Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low- Formula Not Shown Dielectric TDDB ModelingChen, F. / Shinosky, M. A. / Aitken, J. M. et al. | 2011
- 3089
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Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low- $k$ Dielectric TDDB ModelingFen Chen, / Shinosky, M. A. / Aitken, J. M. et al. | 2011
- 3099
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Solid-State Device Phenomena - A Versatile Memristor Model With Nonlinear Dopant KineticsProdromakis, T et al. | 2011
- 3099
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A Versatile Memristor Model With Nonlinear Dopant KineticsProdromakis, Themistoklis / Boon Pin Peh, / Papavassiliou, Christos / Toumazou, Christofer et al. | 2011
- 3106
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Investigation of the Origin of VT/VFB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface PropertiesLee, Bongmook / Novak, S.R. / Lichtenwalner, D.J. / Yang, Xiangyu / Misra, V. et al. | 2011
- 3106
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Investigation of the Origin of Formula Not Shown Modulation by Formula Not Shown Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- Formula Not Shown Layer, and Interface PropertiesLee, B. / Novak, S. R. / Lichtenwalner, D. J. / Yang, X. / Misra, V. et al. | 2011
- 3106
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Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface PropertiesBongmook Lee, / Novak, S. R. / Lichtenwalner, D. J. / Xiangyu Yang, / Misra, V. et al. | 2011
- 3106
-
Investigation of the Origin of VY/VFB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface PropertiesLee, B et al. | 2011
- 3116
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Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap MemoriesAmoroso, S. M. / Monzio Compagnoni, Christian / Mauri, A. / Maconi, A. / Spinelli, A. S. / Lacaita, A. L. et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM DevicesWalczyk, C et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM DevicesWalczyk, C. / Walczyk, D. / Schroeder, T. / Bertaud, T. / Sowinska, M. / Lukosius, M. / Fraschke, M. / Wolansky, D. / Tillack, B. / Miranda, E. et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded Formula Not Shown -Based RRAM DevicesWalczyk, C. / Walczyk, D. / Schroeder, T. / Bertaud, T. / Sowinska, M. / Lukosius, M. / Fraschke, M. / Wolansky, D. / Tillack, B. / Miranda, E. et al. | 2011
- 3132
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Low-Frequency Noise Characterization of Strained Germanium pMOSFETsSimoen, E. / Mitard, J. / De Jaeger, B. / Eneman, G. / Dobbie, A. / Myronov, M. / Whall, T. E. / Leadley, D. R. / Meuris, M. / Hoffmann, T. et al. | 2011
- 3140
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Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2011
- 3147
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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and SimulationsPadovani, A. / Arreghini, A. / Vandelli, L. / Larcher, L. / Van den bosch, G. / Pavan, P. / Van Houdt, J. et al. | 2011
- 3156
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Improved Modeling of Low-Frequency Noise in MOSFETs—Focus on Surface Roughness Effect and Saturation RegionBoutchacha, T. / Ghibaudo, G. et al. | 2011
- 3162
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Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's TheorySalvatore, G. A. / Lattanzio, L. / Bouvet, D. / Ionescu, A. M. et al. | 2011
- 3170
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Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect TransistorsPei Zhao, / Qin Zhang, / Jena, Debdeep / Koswatta, Siyuranga O. et al. | 2011
- 3170
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Molecular and Organic Devices - Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect TransistorsZhao, P et al. | 2011
- 3179
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Laser-Sintered TiO2 Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G et al. | 2011
- 3179
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Laser-Sintered $\hbox{TiO}_{2}$ Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G. / Vesce, L. / Liberatore, M. / Reale, A. / Di Carlo, A. / Brown, Thomas M. et al. | 2011
- 3179
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Laser-Sintered Formula Not Shown Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G. / Vesce, L. / Liberatore, M. / Reale, A. / Di Carlo, A. / Brown, T. M. et al. | 2011
- 3189
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Vacuum Electron Devices - A Bipolar Vacuum Microelectronic DeviceStoner, B R et al. | 2011
- 3189
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A Bipolar Vacuum Microelectronic DeviceStoner, B. R. / Piascik, J. R. / Gilchrist, K. H. / Parker, C. B. / Glass, J. T. et al. | 2011
- 3195
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Performance of an Oxide Cathode Prepared From Submicrometer CarbonatesXiaoxia Wang, / Xianheng Liao, / Qinglan Zhao, / Min Zhang, / Qifu Wang, / Yun Li, et al. | 2011
- 3200
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Study of the Influence of Transverse Velocity on the Design of Cold Cathode-Based Electron Guns for Terahertz DevicesUlisse, G. / Brunetti, F. / Di Carlo, A. et al. | 2011
- 3205
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Study of the Multipactor Effect in Bandpass Wedge-Shaped Waveguide FiltersHueso, J. / Raboso, D. / Schmitt, D. / Boria, V. E. / Martinez, B. / Vicente, C. et al. | 2011
- 3213
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Modeling Investigation of an Ultrawideband Terahertz Sheet Beam Traveling-Wave Tube Amplifier CircuitYoung-Min Shin, / Baig, A. / Barnett, L. R. / Luhmann, N. C. / Pasour, J. / Larsen, P. et al. | 2011
- 3219
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On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS TransistorsDe Michielis, M. / Conzatti, F. / Esseni, D. / Selmi, L. et al. | 2011
- 3219
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BRIEFS - On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS TransistorsDe Michielis, M et al. | 2011
- 3224
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Boosting Short-Circuit Current With Rationally Designed Periodic Si Nanopillar Surface Texturing for Solar CellsShe Mein Wong, / Hong Yu Yu, / Yali Li, / Junshuai Li, / Xiao Wei Sun, / Singh, N. / Lo, P. G. Q. / Dim-Lee Kwong, et al. | 2011
- 3230
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An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional SolutionWei-Jing Wu, / Ruo-He Yao, / Ri-Hui Yao, / Bing-Hui Yan, et al. | 2011
- 3236
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Special issue on materials, processing and reliability of 3D interconnects| 2011
- 3236
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ANNOUNCEMENTS - Call for Papers — Special Issue of IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Materials, Processing, and Reliability of 3D Interconnects| 2011
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Table of contents| 2011
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IEEE Transactions on Electron Devices publication information| 2011
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IEEE Transactions on Electron Devices information for authors| 2011